DISCRETE SEMICONDUCTORS DATA SHEET LV2327E40R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. • Input and output matching cell improves the impedances and facilitates the design of wideband circuits. LV2327E40R QUICK REFERENCE DATA Microwave performance for Tcase = 25 °C in a wideband common-emitter class A circuit. MODE OF OPERATION CW; linear amplifier f (MHz) VCE (V) IC (A) 2.3 to 2.7 16 PL1 (W) ≥4 1 GPO (dB) ≥7 Zi (Ω) 11 + j3 ZL (Ω) 7.5 − j9 PINNING - SOT445B PIN DESCRIPTION 1 collector 2 base 3 emitter connected to flange APPLICATIONS handbook, halfpage 1 c Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band. b 3 DESCRIPTION 3 e 2 NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connected to the flange. Top view MAM315 Marking code: 2327E40R. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor LV2327E40R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V VCER collector-emitter voltage RBE = 47 Ω − 20 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 2 A Ptot total power dissipation − 18 W Tstg storage temperature −65 +200 °C Tj junction temperature Tsld soldering temperature Tmb ≤ 75 °C t ≤ 10 s; note 1 − 200 °C − 235 °C Note 1. At 0.3 mm from the case. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 3 Philips Semiconductors Product specification NPN microwave power transistor LV2327E40R PACKAGE OUTLINE 8.0 handbook, full pagewidth 0.1 5.3 max 3.4 3.0 3 1.8 max 20.6 max seating plane 3.2 2.9 0.4 M 1 4.0 min 3.2 2.9 5.2 max O 0.3 M 5.35 max 4.0 min 2 7.1 3.2 2.9 0.4 M MSA094 - 1 14.2 Dimensions in mm. Torque on nut: max. 0.4 Nm. Recommended screw: M2.5. Fig.2 SOT445B. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor LV2327E40R DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor LV2327E40R NOTES 1997 Feb 18 6 Philips Semiconductors Product specification NPN microwave power transistor LV2327E40R NOTES 1997 Feb 18 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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