DISCRETE SEMICONDUCTORS DATA SHEET LVE21050R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 14 Philips Semiconductors Product specification NPN microwave power transistor LVE21050R FEATURES PINNING - SOT445A • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Self-aligned process entirely ion implanted • Gold metallization ensures an optimum temperature profile with excellent performance and reliability DESCRIPTION 1 collector 2 base 3 emitter connected to flange • Input matching cell improves input impedance and allows an easier design of wideband circuits. handbook, halfpage 1 APPLICATIONS c • Common emitter class-A linear power amplifiers up to 4.2 GHz. b 3 3 e 2 DESCRIPTION Top view MAM251 NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A circuit. MODE OF OPERATION Class-A (CW) f (GHz) VCC (V) IC (A) PL1 (W) Gpo (dB) Zi; ZL (Ω) 2.1 16 1.1 typ. 5.5 typ. 8 see Fig 4 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 14 2 Philips Semiconductors Product specification NPN microwave power transistor LVE21050R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCER collector-emitter voltage RBE = 47 Ω − 20 V VCEO collector-emitter voltage open base − 16 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 2 A Ptot total power dissipation − 18 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature at 0.3 mm from case; t ≤ 10 s − 235 °C Tmb ≤ 75 °C MGL004 10 MGD971 20 handbook, halfpage handbook, Ptot (W) IC (A) 16 1 12 (1) 10−1 8 (2) 4 10−2 1 10 15 VCE (V) 0 102 0 50 100 150 200 Tmb (°C) Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE ≤ 47 Ω. Fig.3 Fig.2 DC SOAR. 1997 Feb 14 3 Power dissipation derating as a function of mounting base temperature. Philips Semiconductors Product specification NPN microwave power transistor LVE21050R THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting-base Tj = 75 °C Rth mb-h thermal resistance from mounting-base to heatsink Tj = 75 °C; note 1 MAX. UNIT 4 K/W 0.7 K/W MAX. UNIT Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified SYMBOL ICBO PARAMETER CONDITIONS collector cut-off current MIN. TYP. VCB = 20 V; IE = 0 − − 0.5 mA VCB = 40 V; IE = 0 − − 2.5 mA VCE = 20 V; RBE = 47 Ω − − 25 mA ICER collector cut-off current ICEO collector cut-off current VCE = 15 V; IB = 0 − − 2 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − − 100 µA hFE DC current gain VCE = 3 V; IC = 1 A 15 − 100 1 handbook, full pagewidth 0.5 2 1.75 1.5 zi 1.25 0.2 2 2.2 GHz 1.5 1.25 2.2 GHz 0.5 1 5 1.75 2 +j 0 0.2 ZL 10 2 5 10 ∞ −j 10 5 0.2 2 0.5 1 MGL035 Zo = 10 Ω. Fig.4 Input and optimum load impedances as functions of frequency; typical values. 1997 Feb 14 4 Philips Semiconductors Product specification NPN microwave power transistor LVE21050R PACKAGE OUTLINE 8.0 handbook, full pagewidth 0.1 4.0 max 3.4 3.0 3 1.8 max 20.6 max seating plane 3.2 2.9 0.4 M 1 4.0 min 3.2 2.9 5.2 max O 0.3 M 5.35 max 4.0 min 2 7.1 3.2 2.9 0.4 M 14.2 MSA090 - 1 Dimensions in mm. Torque on screw: max. 0.4 Nm. Recommended screw: M2.5 or 4-40 UNC/2A. Fig.5 SOT445A. 1997 Feb 14 5 Philips Semiconductors Product specification NPN microwave power transistor LVE21050R DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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