DISCRETE SEMICONDUCTORS DATA SHEET PTC4001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good characteristics stability and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. PTC4001T QUICK REFERENCE DATA Microwave performance up to Th = 25 °C in an oscillator circuit up to 3 GHz. MODE OF OPERATION f (GHz) class A (CW) 2.88 to 3; note 1 VCC (V) PL (mW) IC (mA) 20 ≥550 200 Note 1. Oscillating frequency should stabilize in this range. PINNING - SOT440A PIN DESCRIPTION 1 base APPLICATIONS 2 emitter Common collector oscillator circuits under CW conditions in military and professional applications up to 5 GHz. 3 collector connected to flange 1 handbook, 4 columns c DESCRIPTION NPN silicon planar epitaxial microwave transistor in a SOT440A metal ceramic flange package with collector connected to flange. b 3 2 e MAM131 Top view Marking code: 440. Fig.1 Simplified outline and symbol. 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor PTC4001T LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 16 V VCER collector-emitter voltage RBE = 70 Ω − 35 V VEBO emitter-base voltage open collector − 3 V IC average collector current − 0.25 A Ptot total power dissipation − 4 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C Tmb = 75 °C t < 10 s; note 1 Note 1. At 0.1 mm from case. handbook, MGA028 MGD975 5 1 handbook, halfpage Ptot max (W) IC (A) 4 0.22 3 10−1 0.08 2 (1) 1 10−2 0 0 50 100 150 200 Tmb (°C) 1 (2) 10 16 VCE (V) Tmb = 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE < 250 Ω. Fig.2 Power derating curve as a function of mounting base temperature. 1997 Feb 18 Fig.3 DC SOAR. 3 102 Philips Semiconductors Product specification NPN microwave power transistor PTC4001T THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER CONDITIONS thermal resistance from junction to mounting base MAX. UNIT 22 K/W MAX. UNIT Tj = 75 °C CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. ICBO collector cut-off current VCB = 24 V; IE = 0 − 100 µA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − 0.75 µA V(BR)CBO collector-base breakdown voltage IC = 500 µA; IE = 0 40 − V V(BR)CER collector-emitter breakdown voltage IC = 2.5 mA; RBE = 70 Ω 35 − V APPLICATION INFORMATION Microwave performance up to Th = 25 °C in a common collector test circuit and working in CW class A. MODE OF OPERATION class A (CW) f (GHz) 2.88 to 3; note 1 VCC (V) PL (mW) IC (mA) 20 550 to 750 200 Note 1. Oscillating frequency should stabilize in this frequency range. 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor PTC4001T PACKAGE OUTLINE 0.1 handbook, full pagewidth 3.45 2.90 1.7 max 4.5 max 3 20.5 max seating plane 0.25 M 1.0 1 4.5 min O 0.25 M 3.2 2.9 5.1 3.4 (1) 2 2.0 7.1 14.2 Dimensions in mm. Torque on nut: max. 0.4 Nm. Recommended screw: M2.5. (1) Flatness of this area ensures full thermal contact with bolt head. Fig.4 SOT440A. 1997 Feb 18 5 MBC888 5.5 max 4.5 min Philips Semiconductors Product specification NPN microwave power transistor PTC4001T DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 18 6 Philips Semiconductors Product specification NPN microwave power transistor PTC4001T NOTES 1997 Feb 18 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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