DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. APPLICATIONS LWE2010S QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class A selective amplifier. MODE OF OPERATION f (GHz) VCE (V) IC (mA) PL1 (W) Gpo (dB) 2.3 18 110 ≥0.8 ≥8 class A (CW) ZI/ZL (Ω) see Figs 6 and 7 PINNING - SOT446A PIN DESCRIPTION 1 collector 2 base 3 emitter connected to flange Common emitter class A power amplifiers at frequencies up to 2.3 GHz. handbook, halfpage 1 DESCRIPTION c NPN silicon planar epitaxial microwave power transistor in a SOT446A metal ceramic flange package, with emitter connected to flange. 3 b e 2 MAM313 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor LWE2010S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCER collector-emitter voltage RBE = 250 Ω − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 250 mA Ptot total power dissipation − 4.8 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C Tmb = 75 °C t ≤ 10 s; note 1 Note 1. Up to 0.1 mm from ceramic. MGA249 MGA250 6 handbook, halfpage 1 handbook, halfpage Ptot (W) IC (A) 4 10−1 2 (1) 10−2 1 (2) 10 VCE (V) 0 −50 102 Tmb ≤ 75 °C. (1) Region of permissible DC operation. (2) Permissible extension provided RBE ≤ 250 Ω. 50 100 150 200 250 Tmb (oC) Ptot max = 4.8 W. Fig.3 Fig.2 DC SOAR. 1997 Feb 19 0 3 Maximum power dissipation derating as a function of mounting base temperature. Philips Semiconductors Product specification NPN microwave power transistor LWE2010S THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 75 °C 22 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 2 K/W Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector cut-off current MIN. MAX. UNIT VCB = 20 V; IE = 0 − 75 µA VCB = 40 V; IE = 0 − 500 µA nA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − 200 hFE DC current gain VCE = 5 V; IC = 110 mA 15 150 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class A selective amplifier. MODE OF OPERATION Class A (CW); note 1 f (GHz) VCE (V) IC (mA) PL1 (W) Gpo (dB) ZI (Ω) ZL (Ω) 2.3 18 110 ≥0.8; typ. 0.9 ≥8; typ. 9 5.2 + j 16.5 7.5 + j 8.75 Note 1. In narrowband test circuit shown in Fig.4. 1997 Feb 19 4 Philips Semiconductors Product specification NPN microwave power transistor LWE2010S 30 mm handbook, full pagewidth 1 5 2.5 (3x) 30 mm 4.5 8.5 10 5 5 3 1 3 40 mm 40 mm 4.5 0.6 3 3 4 9 MBC717 C1 handbook, full pagewidth C2 L2 L1 input output C4 C3 MBC718 Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.4 Prematching test circuit board. 1997 Feb 19 5 Philips Semiconductors Product specification NPN microwave power transistor LWE2010S List of components (see Fig.4) COMPONENT DESCRIPTION VALUE DIMENSIONS L1 3 turns 0.2 mm copper wire with ferrite bead int. dia. 2 mm L2 5 turns 0.5 mm copper wire int. dia. 2 mm C1, C2 feedthrough bypass capacitor C3, C4 DC block capacitor Erie, ref. 1214-001 100 pF MGA251 handbook,1.2 halfpage PL (W) 0.8 0.4 0 0 0.05 0.1 0.15 Pi (W) 0.2 f = 2.3 GHz; VCE = 18 V; IC = 110 mA (regulated). Fig.5 Load power as a function of input power. 1997 Feb 19 CATALOGUE NO. 6 Philips Semiconductors Product specification NPN microwave power transistor LWE2010S 1 handbook, full pagewidth 0.5 2 2.3 GHz 0.2 2 GHz 5 Zi 10 +j 0.2 0 0.5 1 2 5 10 ∞ –j 10 5 0.2 2 0.5 PL1 = 0.8 W; VCE = 18 V; ZO = 50 Ω; IC = 110 mA. 1 MGA253 Fig.6 Input impedance as a function of frequency associated with optimum load impedances. 1 handbook, full pagewidth 0.5 0.2 ZL 2 5 2 GHz 2.3 GHz 10 +j 0 0.2 0.5 1 2 5 10 ∞ –j 10 5 0.2 PL1 = 0.8 W; VCE = 18 V; ZO = 50 Ω; IC = 110 mA. 2 0.5 1 MGA252 Fig.7 Optimum load impedance as a function of frequency; typical values. 1997 Feb 19 7 Philips Semiconductors Product specification NPN microwave power transistor LWE2010S PACKAGE OUTLINE O 4.3 handbook, full pagewidth 0.1 2.2 1.7 2.3 3 O 5.8 seating plane 0.76 1 9.4 max 18.8 min 2 MBC665 2.9 Dimensions in mm. Fig.8 SOT446A. 1997 Feb 19 8 Philips Semiconductors Product specification NPN microwave power transistor LWE2010S DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 9 Philips Semiconductors Product specification NPN microwave power transistor LWE2010S NOTES 1997 Feb 19 10 Philips Semiconductors Product specification NPN microwave power transistor LWE2010S NOTES 1997 Feb 19 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 1949 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580/xxx France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 São Paulo, SÃO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA53 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 19 Document order number: 9397 750 01713