DISCRETE SEMICONDUCTORS DATA SHEET LLE15370X NPN microwave power transistor Product specification Supersedes data of December 1994 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures good stability and allows an easier design of wideband circuits. LLE15370X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) ηC (%) Zi; ZL (Ω) Class AB (CW) 1.5 24 0.3 ≥33 ≥8 typ. 43 see Figs 8 and 9 PINNING - SOT437A PIN DESCRIPTION 1 collector 2 base 3 emitter connected to flange APPLICATION Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.4 GHz and 1.6 GHz. handbook, 4 columns 1 c b 3 e DESCRIPTION 2 Top view NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange. MAM112 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor LLE15370X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 45 V VCER collector-emitter voltage RBE = 220 Ω − 30 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 3 V IC DC collector current − 6 A Pi input power f = 1.5 GHz; VCE = 24 V; class AB − 8 W Tmb = 75 °C − 50 W Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tsld soldering temperature − 235 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MBD760 10 MEA577 60 P tot IC (W) (A) 40 Ι ΙΙ 1 20 10 1 1 10 VCE (V) 0 10 2 0 50 100 150 200 T mb ( o C) Tmb ≤ 75 °C. (I) Region of permissible DC operation. (II) Permissible extension provided RBE ≤ 220 Ω. Fig.2 DC SOAR. 1997 Feb 18 Fig.3 Power derating curve. 3 Philips Semiconductors Product specification NPN microwave power transistor LLE15370X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Tj = 100 °C Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink note 1 MAX. UNIT 2 K/W 0.2 K/W Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 20 V − 3 mA V(BR)CER collector-emitter breakdown voltage IC = 15 mA; RBE = 220 Ω 30 − V V(BR)CBO collector-base breakdown voltage IC = 15 mA 45 − V V(BR)EBO emitter-base breakdown voltage IE = 15 mA 3 − V hFE DC current gain IC = 1 A; VCE = 3 V 15 100 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) ηC (%) Zi; ZL (Ω) Class AB (CW) note 1 1.5 24 0.3 ≥33; typ. 37 ≥8; typ. 8.7 typ. 43 see Figs 8 and 9 Note 1. dim is less than −30 dBc at Po = 15 W (av); f = 200 kHz. 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor LLE15370X 30 0.8 30 15.2 2.5 2.5 4.0 7.0 7.0 6 2.5 5.0 2.0 40 40 5.0 7.5 0.7 2.5 0.7 4 5.0 2.0 0.8 2.5 4.7 2.8 , MBD767 V BB C5 VCC C6 F1 input L2 L1 C1 output C4 C2 C3 Rr MBD768 The test circuit is split into two independent halves, each being 30 × 30 mm in size. Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.4 Prematching test circuit board. 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor LLE15370X PREMATCHING TEST CIRCUIT handbook, full pagewidth BIAS CIRCUIT VCC R1 C6 TR1 C5 R2 F1 P1 D1 R3 L2 C7 L1 DUT D2 MEA600 Fig.5 Class AB bias circuit. List of components (see Figs 4 and 5) COMPONENT DESCRIPTION VALUE ORDERING INFORMATION TR1 transistor, BDT91 or equivalent C1, C4 DC blocking chip capacitor 100 pF ATC 100A101kp C2, C3 trimmer capacitor 0.5 to 5.0 pF Tekelec 727-1 C5, C6 feedthrough bypass capacitor 1500 pF Erie 1250-003 C7 electrolytic capacitor 10 µF, >30 V D1 diode BY239 or equivalent; note 1 D2 diode BY239 or equivalent; note 2 L1 4 turns 0.5 mm copper wire; internal diameter = 2 mm L2 3 turns 0.5 mm copper wire; internal diameter = 2 mm P1 linear potentiometer 4.7 kΩ R1 resistor 100 Ω, 0.25 W R2 resistor 10 kΩ, 0.25 W 56 Ω, 0.25 W R3 resistor F1 ferrite bead Rr copper rivet Philips tube, 12NC = 4330 030 43081 4.2 × 2.2 × 3.2 mm (4B1) Notes 1. In thermal contact with TR1. 2. In thermal contact with DUT. 1997 Feb 18 6 Philips Semiconductors Product specification NPN microwave power transistor LLE15370X MBD763 40 MBD764 20 handbook, halfpage handbook, halfpage d im (dBc) PL (W) 25 30 30 20 I CQ = 300 mA 35 100 mA 40 10 45 0 0 2 4 P i (W) 50 mA 50 6 0 5 10 15 20 25 Po (av) (W) VCE = 24 V; f1 = 1500 MHz; f2 = 1500.2 MHz. VCE = 24 V; f = 1500 MHz. Fig.7 Fig.6 Load power as a function of input power. Intermodulation distortion as a function of average output power. Input and optimum load impedances VCE = 24 V; ICQ = 0.3 A (see Figs 8 and 9). 1997 Feb 18 f (GHz) Zi (Ω) ZL (Ω) 1.40 2.4 + j4.4 5.5 − j1.8 1.45 3.2 + j4.6 5.1 − j1.3 1.50 4.2 + j4.5 4.7 − j1.0 1.55 5.3 + j3.8 4.2 − j0.9 1.60 6.2 + j2.5 3.8 − j0.8 7 Philips Semiconductors Product specification NPN microwave power transistor LLE15370X 1 handbook, full pagewidth 0.5 2 1.4 GHz 0.2 1.5 GHz Zi 5 10 1.6 GHz +j 0 0.2 0.5 1 2 5 ∞ 10 –j 10 5 0.2 2 0.5 MBD765 1 VCE = 24 V; Zo = 10 Ω; ICQ = 0.3 A. Fig.8 Input impedance as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 2 ZL 0.2 5 10 +j 0 0.2 0.5 1 2 5 ∞ 10 1.6 GHz –j 1.5 GHz 1.4 GHz 10 5 0.2 2 0.5 1 MBD766 VCE = 24 V; Zo = 10 W; ICQ = 0.3 A. Fig.9 Optimum load impedance as a function of frequency; typical values. 1997 Feb 18 8 Philips Semiconductors Product specification NPN microwave power transistor LLE15370X PACKAGE OUTLINE 19.1 max 0.13 max 6.5 max 1.7 max 4.8 max 2.3 2.0 seating plane 14.22 0.25 M 1 4.5 min 6.5 6.2 O 3.3 3 4.5 min 2 1.7 max Dimensions in mm. Torque on screws: max. 0.5 Nm. Recommended screw: M3. Fig.10 SOT437A. 1997 Feb 18 9 MBB945 Philips Semiconductors Product specification NPN microwave power transistor LLE15370X DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 18 10 Philips Semiconductors Product specification NPN microwave power transistor LLE15370X NOTES 1997 Feb 18 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 18 Document order number: 9397 750 01778