DISCRETE SEMICONDUCTORS DATA SHEET PXB16050U NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cells allow an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. PXB16050U QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. MODE OF OPERATION f (GHz) Class C (CW) 1.65 VCC (V) 28 PL (W) ηC (%) Gpo (dB) >45 >8.5 >45 Zi/ZL (Ω) see Figs 6 and 7 PINNING - SOT439A PIN DESCRIPTION 1 collector 2 emitter 3 base connected to flange APPLICATIONS Common-base class C power amplifiers at frequencies between 1.5 and 1.8 GHz. 1 handbook, 4 columns c b DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to the flange. 3 3 e 2 MAM045 Top view Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor PXB16050U LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 45 V VCEO collector-emitter voltage open base − 15 V VCES collector-emitter voltage RBE = 0 Ω − 45 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC ) − 6 A Ptot total power dissipation − 67 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Tsld soldering temperature − 235 °C Tmb = 75 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MGL038 100 MGL037 60 handbook, halfpage handbook, halfpage Ptot PL (W) (W) 80 40 60 40 20 20 0 0 −50 0 100 Tmb (°C) 0 200 2 4 6 Pi (W) 8 VCC = 28 V; f = 1.65 GHz. Ptot max = 67 W. Fig.2 1997 Feb 19 Fig.3 Power derating curve. 3 Load power as a function of input power (see Fig.4). Philips Semiconductors Product specification NPN microwave power transistor PXB16050U THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 100 °C 1.5 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.2 K/W MAX. UNIT Note 1. See “Mounting recommendations in the General part of handbook SC19a”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector cut-off current VCB = 40 V; IE = 0 3 mA VCB = 45 V; IE = 0 15 mA ICES collector cut-off current VCE = 30 V; RBE = 0 3 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 300 µA APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C measured in the common base test circuit as shown in Fig.4 and working in CW class C mode. MODE OF OPERATION Class C (CW); see note 1 f (GHz) 1.65 VCC (V) 28 PL (W) ≥45; typ. 50 Gpo (dB) ≥8.5; typ. 9.5 ηC (%) ≥45; typ. 52 Zi/ZL (Ω) see Figs 6 and 7 Note 1. Type PXB16050U may be used for narrowband or broadband amplifiers within the frequency range 1.5 to 1.8 GHz. Operation below 1.5 GHz may damage the transistor due to resonance of the internal output prematching circuit. 1997 Feb 19 4 Philips Semiconductors Product specification NPN microwave power transistor PXB16050U handbook, full pagewidth −VCC +VCC C2 L2 L1 C1 C3 C4 MGK069 Substrate: Teflon fibreglass. Permittivity: εr = 2.55. Thickness: 0.8 mm. The narrowband test circuit is split into two totally independent halves each being 30 × 40 mm in size. Fig.4 Narrowband test circuit. 1997 Feb 19 5 Philips Semiconductors Product specification NPN microwave power transistor 2.5 handbook, full pagewidth PXB16050U 7 5 4 5 2.24 5 5 4 3 3.5 3 input 50 Ω 2.24 output 50 Ω 10.5 4 7.5 3 9 5 7.5 4 9.5 MGL036 Dimensions in mm. Fig.5 Narrowband test circuit dimensions. List of components (see Fig.4) COMPONENT DESCRIPTION VALUE CATALOGUE NO. L1 4 turns 0.5 mm diameter copper wire internal diameter = 2 mm − − L2 5 turns 0.5 mm diameter copper wire internal diameter = 2 mm − − C1 DC blocking capacitor 100 pF ATC C2 feedthrough bypass capacitor − Erie 1250-003 C3, C4 trimmer 0.6 to 4.5 pF Tekelec AT-3-7271SL 1997 Feb 19 6 Philips Semiconductors Product specification NPN microwave power transistor PXB16050U 1 handbook, full pagewidth 0.5 2 0.2 5 1.5 GHz + j 10 Zi 0.2 0 1.8 0.5 1 2 5 10 ∞ –j 10 5 0.2 2 0.5 1 MCD623 VCC = 28 V; ZO = 10 Ω. Fig.6 Input impedance as a function of frequency; typical values. 1 handbook, full pagewidth 0.5 2 ZL 0.2 5 1.8 GHz 10 1.5 +j 0 0.2 0.5 1 2 5 10 ∞ –j 10 5 0.2 2 0.5 1 MCD622 VCC = 28 V; ZO = 10 Ω. Fig.7 Optimum load impedance as a function of frequency; typical values. 1997 Feb 19 7 Philips Semiconductors Product specification NPN microwave power transistor PXB16050U PACKAGE OUTLINE 12.85 max handbook, full pagewidth 0.15 max 6 max 3.3 2.9 1.6 max 3 23 max seating plane 3.7 max 2.7 min 1 9.85 max 3.3 2.7 min 2 MBC881 8.25 16.5 Dimensions in mm. Torque on screws: max. 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. Fig.8 SOT439A. 1997 Feb 19 8 10.3 10.0 Philips Semiconductors Product specification NPN microwave power transistor PXB16050U DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 9 Philips Semiconductors Product specification NPN microwave power transistor PXB16050U NOTES 1997 Feb 19 10 Philips Semiconductors Product specification NPN microwave power transistor PXB16050U NOTES 1997 Feb 19 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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