TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/528 Devices Qualified Level 2N6032 JANTX JANTXV 2N6033 MAXIMUM RATINGS Ratings Symbol 2N6032 2N6033 Units Collector-Emitter Voltage Collector-Base Voltage Collector Current Emitter-Base Voltage Base Current Total Power Dissipation VCEO VCBO IC VEBO IB PT 90 120 50 120 150 40 Vdc Vdc Adc Vdc Adc W @ TC = +250C (1) Operating & Storage Temperature Range Top, Tstg 7.0 10 140 -65 to +200 0 C TO-3* (TO-204AA) THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly 800 mW/0C between TC = 250C and TC = 2000C Max. 1.25 Unit 0 C/W *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N6032 2N6033 V(BR)CEO 90 120 Vdc 2N6032 2N6033 V(BR)CER 110 140 Vdc 2N6032 2N6033 V(BR)CEX 120 150 Vdc 2N6032 2N6033 ICBO 25 25 mAdc 2N6032 2N6033 ICEX 12 10 mAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Breakdown Voltage IC = 200 mAdc, VEB = 1.5 Vdc Collector-Base Cutoff Current VCB = 120 Vdc VCB = 150 Vdc Collector-Emitter Cutoff Current VCE = 110 Vdc, VBE =-1.5 Vdc VCE = 135 Vdc, VBE =-1.5 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6032, 2N6033, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit IEBO 10 mAdc ICEO 10 mAdc OFF CHARACTERISTICS (con’t) Emitter-Base Cutoff Current VEB = 7.0 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 50 Adc, VCE = 2.6 Vdc IC = 40 Adc, VCE = 2.0 Vdc Collector-Emitter Saturation Voltage IC = 50 Adc, IB = 5.0 Adc IC = 40 Adc, IB = 4.0 Adc Base-Emitter Saturation Voltage IC = 50 Adc, IB = 5.0 Adc IC = 40 Adc, IB = 4.0 Adc 10 10 50 50 2N6032 2N6033 hFE 2N6032 2N6033 VCE(sat) 1.3 1.0 Vdc 2N6032 2N6033 VBE(sat) 2.0 2.0 Vdc DYNAMIC CHARACTERISTICS Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe 10 40 1,000 pF on 0.5 0.5 µs off 2.0 2.0 µs Cobo SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 50 Adc; IB = 5.0 Adc VCC = 30 Vdc; IC = 40 Adc; IB = 4.0 Adc Turn-Off Time VCC = 30 Vdc±2; IC = 50 Adc; IB1 = 5 IB2 = -5 Adc VCC = 30 Vdc±2; IC = 40 Adc; IB1 = 4 IB2 = -4 Adc 2N6032 2N6033 t 2N6032 2N6033 t SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 2.8 Vdc, IC = 50 Adc 2N6032 Test 2 VCE = 3.5 Vdc, IC = 40 Adc 2N6033 Test 3 VCE = 24 Vdc, IC = 5.8 Adc All Types Test 4 VCE = 40 Vdc, IC = 0.9 Adc All Types Test 5 VCE = 90 Vdc, IC = 0.18 Adc 2N6032 Test 6 VCE = 120 Vdc, IC = 0.1 Adc 2N6033 (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 WWW.ALLDATASHEET.COM Copyright © Each Manufacturing Company. All Datasheets cannot be modified without permission. This datasheet has been download from : www.AllDataSheet.com 100% Free DataSheet Search Site. Free Download. No Register. Fast Search System. www.AllDataSheet.com