DF N1 0 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Trench MOSFET technology Very low threshold voltage for portable applications: VGS(th) = 0.7 V Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications • • • • Relay driver High-speed line driver Level shifter Power management in battery-driven portables 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VGS = 4.5 V; ID = 600 mA; Tj = 25 °C - 470 620 mΩ VGS = -4.5 V; ID = -500 mA; Tj = 25 °C - 1.02 1.4 Ω - - 20 V - - 600 mA - - -20 V - - -500 mA TR1 (N-channel), Static characteristics RDSon drain-source on-state resistance TR2 (P-channel), Static characteristics RDSon drain-source on-state resistance TR1 (N-channel) VDS drain-source voltage Tj = 25 °C ID drain current VGS = 4.5 V; Tamb = 25 °C [1] TR2 (P-channel) VDS drain-source voltage Tj = 25 °C ID drain current VGS = -4.5 V; Tamb = 25 °C Scan or click this QR code to view the latest information for this product [1] PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET [1] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 Simplified outline Graphic symbol source TR1 D2 D1 1 6 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 7 2 3 5 8 G1 G2 4 S1 S2 017aaa262 6. Ordering information Table 3. Ordering information Type number PMCXB900UE PMCXB900UE Product data sheet Package Name Description Version DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1216 All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 2 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET 7. Marking Table 4. Marking codes Type number Marking code PMCXB900UE 10 00 00 MARKING CODE (EXAMPLE) READING DIRECTION MARK-FREE AREA PIN 1 INDICATION MARK VENDOR CODE READING EXAMPLE: 11 01 10 Fig. 1. YEAR DATE CODE aaa-007665 DFN1010B-6 (SOT1216) binary marking code description 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - 20 V -8 8 V TR1 (N-channel) VDS drain-source voltage VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C [1] - 600 mA VGS = 4.5 V; Tamb = 100 °C [1] - 400 mA - 2.5 A [2] - 265 mW [1] - 380 mW - 4025 mW - 400 mA - -20 V -8 8 V IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C TR1 (N-channel), Source-drain diode IS source current Tamb = 25 °C [1] TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage PMCXB900UE Product data sheet Tj = 25 °C All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 3 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET Symbol Parameter Conditions ID drain current VGS = -4.5 V; Tamb = 25 °C VGS = -4.5 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Min Max Unit [1] - -500 mA [1] - -300 mA - -2 A [2] - 265 mW [1] - 380 mW - 4025 mW - -350 mA Tsp = 25 °C TR2 (P-channel), Source-drain diode IS source current Tamb = 25 °C [1] Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 2. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 MOSFET transistor: Normalized total power dissipation as a function of junction temperature PMCXB900UE Product data sheet Fig. 3. - 25 75 125 Tj (°C) 175 MOSFET transistor: Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 7 October 2013 25 © NXP N.V. 2013. All rights reserved 4 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-008997 10 Limit RDSon = VDS/ID ID (A) tp = 10 µs 1 tp = 100 µs 10-1 tp = 1 ms DC; Tsp = 25 °C tp = 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-2 10-1 1 tp = 100 ms 10 VDS (V) 102 IDM = single pulse Fig. 4. TR1 (N-channel): safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage aaa-006901 -10 ID (A) Limit RDSon = VDS/ID tp = 10 µs -1 100 µs 1 ms -10-1 DC; Tsp = 25 °C 10 ms DC; Tamb = 25 °C; drain mounting pad 1 cm2 -10-2 -10-1 -1 100 ms -10 VDS (V) -102 IDM = single pulse Fig. 5. TR2 (P-channel): safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 5 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - 410 475 K/W [2] - 285 330 K/W - 27 31 K/W [1] - 410 475 K/W [2] - 285 330 K/W - 27 31 K/W TR1 (N-channel) Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) in free air thermal resistance from junction to solder point TR2 (P-channel) Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) in free air thermal resistance from junction to solder point [1] [2] Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . aaa-006902 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 10 10-3 0.02 0.01 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 6. TR1 and TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 6 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-006903 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 10 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 1 cm Fig. 7. 1 102 10 103 tp (s) 2 TR1 and TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.7 0.95 V IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = 4.5 V; ID = 600 mA; Tj = 25 °C - 470 620 mΩ VGS = 4.5 V; ID = 600 mA; Tj = 150 °C - 760 1000 mΩ VGS = 2.5 V; ID = 500 mA; Tj = 25 °C - 620 850 mΩ VGS = 1.8 V; ID = 100 mA; Tj = 25 °C - 845 1300 mΩ VGS = 1.5 V; ID = 10 mA; Tj = 25 °C - 1125 3000 mΩ VGS = 1.2 V; ID = 1 mA; Tj = 25 °C - 2210 - mΩ VDS = 5 V; ID = 600 mA; Tj = 25 °C - 1 - S RDSon gfs drain-source on-state resistance transfer conductance PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 7 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Dynamic characteristics QG(tot) total gate charge VDS = 10 V; ID = 600 mA; VGS = 4.5 V; - 0.4 0.7 nC QGS gate-source charge Tj = 25 °C - 0.1 - nC QGD gate-drain charge - 0.1 - nC Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 21.3 - pF Coss output capacitance Tj = 25 °C - 5.4 - pF Crss reverse transfer capacitance - 4.2 - pF td(on) turn-on delay time VDS = 10 V; ID = 600 mA; VGS = 4.5 V; - 5.6 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 9.2 - ns td(off) turn-off delay time - 19 - ns tf fall time - 51 - ns IS = 360 mA; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V TR1 (N-channel), Source-drain diode characteristics VSD source-drain voltage TR2 (P-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA IGSS gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -1 µA VGS = -4.5 V; ID = -500 mA; Tj = 25 °C - 1.02 1.4 Ω VGS = -4.5 V; ID = -500 mA; Tj = 150 °C - 1.54 2.1 Ω VGS = -2.5 V; ID = -200 mA; Tj = 25 °C - 1.27 2.2 Ω VGS = -1.8 V; ID = -40 mA; Tj = 25 °C - 1.7 3.3 Ω VGS = -1.5 V; ID = -10 mA; Tj = 25 °C - 2.3 5 Ω VGS = -1.2 V; ID = -1 mA; Tj = 25 °C - 3.5 - Ω VDS = -10 V; ID = -500 mA; Tj = 25 °C - 480 - mS RDSon gfs drain-source on-state resistance transfer conductance TR2 (P-channel), Dynamic characteristics QG(tot) total gate charge VDS = -10 V; ID = -450 mA; - 1.19 2.1 nC QGS gate-source charge VGS = -4.5 V; Tj = 25 °C - 0.17 - nC QGD gate-drain charge - 0.1 - nC PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 8 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 43 - pF Coss output capacitance Tj = 25 °C - 14 - pF Crss reverse transfer capacitance - 8 - pF td(on) turn-on delay time VDS = -10 V; ID = -450 mA; - 2.3 - ns tr rise time VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C - 5 - ns td(off) turn-off delay time - 13.5 - ns tf fall time - 6 - ns - -0.7 -1.2 V TR2 (P-channel), Source-drain diode characteristics VSD source-drain voltage IS = -115 mA; VGS = 0 V; Tj = 25 °C aaa-008998 2.5 4.5 V ID (A) aaa-008999 10-3 ID (A) 2.0 2.5 V 10-4 1.5 min 1.0 1.8 V 0.5 typ max 10-5 1.5 V VGS = 1.2 V 0 Fig. 8. 0 1 2 3 VDS (V) 4 10-6 0 0.5 1.0 VGS (V) 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V TR1: output characteristics; drain current as a Fig. 9. function of drain-source voltage; typical values TR1: sub-threshold drain current as a function of gate-source voltage PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 9 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-009000 3 RDSon (Ω) 1.5 V 1.2 V 1.8 V aaa-009001 3 2V RDSon (Ω) 2.5 V 2 2 3V 1 1 Tj = 150 °C VGS = 4.5 V 0 0 0.5 1.0 1.5 2.0 ID (A) Tj = 25 °C 0 2.5 Tj = 25 °C 0 1 2 3 4 VGS (V) 5 ID = 0.6 A Fig. 10. TR1: drain-source on-state resistance as a function of drain current; typical values Fig. 11. TR1: drain-source on-state resistance as a function of gate-source voltage; typical values aaa-009002 2.5 aaa-009003 2.0 ID (A) a 2.0 1.5 1.5 1.0 1.0 Tj = 150 °C 0.5 0 0 1 Tj = 25 °C 2 0.5 3 4 VGS (V) 0 -60 5 VDS > ID × RDSon Fig. 12. TR1: transfer characteristics; drain current as a function of gate-source voltage; typical values PMCXB900UE Product data sheet 0 60 120 Tj (°C) 180 Fig. 13. TR1: normalized drain-source on-state resistance as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 10 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-009004 1.5 aaa-009005 102 VGS(th) (V) C (pF) 1.0 Ciss 10 max Coss 0.5 typ Crss min 0 -60 0 60 120 Tj (°C) 1 10-1 180 ID = 0.25 mA; VDS = VGS 1 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 14. TR1: gate-source threshold voltage as a function of junction temperature Fig. 15. TR1: input, output and reverse transfer capacitances as a function of drain-source voltage; typical values aaa-009006 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 017aaa137 0 0 0.1 0.2 0.3 Fig. 17. Gate charge waveform definitions 0.4 0.5 QG (nC) ID = 0.6 A; VDS = 10 V; Tamb = 25 °C Fig. 16. TR1: gate-source voltage as a function of gate charge; typical values PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 11 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-009007 2.5 aaa-006904 -2.0 IS (A) VGS = -4.5 V ID (A) 2.0 -3.5 V -1.5 -3 V 1.5 -1.0 -2.5 V -0.5 -1.8 V 1.0 0.5 Tj = 150 °C Tj = 25 °C -1.2 V 0 0 0.4 0.8 1.2 0.0 1.6 2.0 VSD (V) VGS = 0 V 0 -1 -2 -3 VDS (V) -4 Tj = 25 °C Fig. 18. TR1: source current as a function of sourcedrain voltage; typical values Fig. 19. TR2: output characteristics; drain current as a function of drain-source voltage; typical values aaa-006905 -10-2 aaa-006906 2.0 ID (A) RDSon (Ω) -10-3 -1.8 V -2.2 V 1.5 min typ -2.5 V -3 V max -3.5 V -10-4 1.0 VGS = -4.5 V -10-5 -10-6 0.0 0.5 -0.5 -1.0 VGS (V) 0.0 0.0 -1.5 Tj = 25 °C; VDS = -5 V Product data sheet -1.0 -1.5 ID (V) -2.0 Tj = 25 °C Fig. 20. TR2: sub-threshold drain current as a function of gate-source voltage PMCXB900UE -0.5 Fig. 21. TR2: drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 12 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-006907 5 aaa-006908 -1.00 RDSon (Ω) ID (A) 4 Tj = 25 °C -0.75 Tj = 150 °C 3 -0.50 2 Tj = 150 °C -0.25 1 0 Tj = 25 °C 0 -1 -2 -3 -4 VGS (V) 0.00 -5 ID = -0.5 A 0 -1 -2 -3 VGS (V) -4 VDS > ID × RDSon Fig. 22. TR2: drain-source on-state resistance as a function of gate-source voltage; typical values aaa-006909 1.50 a Fig. 23. TR2: transfer characteristics; drain current as a function of gate-source voltage; typical values aaa-006910 -1.5 VGS(th) (V) 1.25 -1.0 max 1.00 typ -0.5 0.75 0.50 -60 min 0 60 120 Tj (°C) Fig. 24. TR2: normalized drain-source on-state resistance as a function of junction temperature; typical values PMCXB900UE Product data sheet 0.0 -60 180 0 60 120 Tj (°C) 180 ID = -0.25 mA; VDS = VGS Fig. 25. TR2: gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 13 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET aaa-006911 102 aaa-006912 -5 VGS (V) Ciss -4 C (pF) Coss -3 10 Crss -2 -1 1 -10-1 -1 -10 VDS (V) 0 -102 0 0.2 0.4 QG (nC) 0.6 ID = -0.45 A; VDS = -10 V; Tamb = 25 °C f = 1 MHz; VGS = 0 V Fig. 26. TR2: input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig. 27. TR2: gate-source voltage as a function of gate charge; typical values aaa-006913 -2.0 VDS IS (A) ID -1.5 VGS(pl) VGS(th) -1.0 VGS QGS1 QGS2 QGS -0.5 QGD Tj = 150 °C Tj = 25 °C QG(tot) 017aaa137 0.0 0.0 Fig. 28. Gate charge waveform definitions -0.5 -1.0 -1.5 VSD (V) -2.0 VGS = 0 V Fig. 29. TR2: source current as a function of sourcedrain voltage; typical values PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 14 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET 11. Test information P t2 t1 t2 duty cycle δ = t1 t 006aaa812 Fig. 30. Duty cycle definition 12. Package outline 0.35 0.35 0.15 0.23 1 3 0.125 0.205 0.22 0.30 0.95 1.05 6 0.04 max 2 0.34 0.40 Dimensions in mm 5 4 0.32 0.40 0.275 0.275 1.05 1.15 13-03-05 Fig. 31. Package outline DFN1010B-6 (SOT1216) PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 15 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET 13. Soldering Footprint information for reflow soldering of DFN1010B-6 package SOT1216 0.9 0.35 0.35 0.15 0.2 (6x) 0.15 1.3 1.2 0.35 0.25 0.5 0.6 0.35 0.25 1.1 0.3 (6x) 1 1.35 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1216_fr Fig. 32. Reflow soldering footprint for DFN1010B-6 (SOT1216) PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 16 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMCXB900UE v.1 20131007 Product data sheet - - PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 17 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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All rights reserved 18 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 19 / 20 PMCXB900UE NXP Semiconductors 20 V, complementary N/P-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 3 8 Limiting values .......................................................3 9 Thermal characteristics .........................................6 10 Characteristics ....................................................... 7 11 Test information ................................................... 15 12 Package outline ................................................... 15 13 Soldering .............................................................. 16 14 Revision history ................................................... 17 15 15.1 15.2 15.3 15.4 Legal information .................................................18 Data sheet status ............................................... 18 Definitions ...........................................................18 Disclaimers .........................................................18 Trademarks ........................................................ 19 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 7 October 2013 PMCXB900UE Product data sheet All information provided in this document is subject to legal disclaimers. 7 October 2013 © NXP N.V. 2013. All rights reserved 20 / 20