PHILIPS MF1011B900

DISCRETE SEMICONDUCTORS
DATA SHEET
MF1011B900Y
Microwave power transistor
Product specification
Supersedes data of December 1994
1997 Feb 18
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES
• Suitable for short and medium
pulse applications up to 100 µs
pulse width, duty factor 10%
• Diffused emitter ballasting resistors
improve ruggedness
• Interdigitated emitter-base
structure provides high emitter
efficiency
• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
• Multicell geometry improves power
sharing and reduces thermal
resistance
MF1011B900Y
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common-base class C
narrowband amplifier.
MODE OF
OPERATION
CONDITIONS
tp = 10 µs;
δ = 1%
Class C
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
1.09
50
800
≥6
≥40
PINNING - SOT448A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
• Internal input and output
prematching networks allow an
easier design of circuits.
APPLICATIONS
Intended for use in common base
class C broadband pulsed power
amplifiers for IFF, TCAS and Mode S
applications in the
1030 MHz to 1090 MHz band. Also
suitable for medium pulse, heavy duty
operation within this band.
1
handbook, 4 columns
c
b
3
3
e
2
MAM045
Top view
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT448A glued cap metal ceramic
flange package, with base connected
to flange.
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
Microwave power transistor
MF1011B900Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
65
V
VCES
collector-emitter voltage
RBE = 0
−
65
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
ICM
peak collector current
tp = 10 µs; δ = 1%
−
50
A
Ptot
total power dissipation
Tmb < 75 °C; tp ≤ 10 µs; δ ≤ 1%
−
1750
W
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
t ≤ 10 s; note 1
Note
1. Up to 0.2 mm from ceramic.
MLC721
1800
handbook, halfpage
P tot
(W)
1200
600
0
50
0
50
100
150
200
o
T mb ( C)
tp = 10 µs; δ = 1%.
Fig.2 Power derating curve.
1997 Feb 18
3
Philips Semiconductors
Product specification
Microwave power transistor
MF1011B900Y
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base Tj = 120 °C
0.84
K/W
Rth mb-h
thermal resistance from mounting base to heatsink note 1
0.2
K/W
Zth
thermal impedance from junction to heatsink
0.01
K/W
tp = 10 µs; δ = 1%;
notes 1and 2
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 50 V
27
mA
ICES
collector cut-off current
VBE = 0; VCE = 50 V
27
mA
IEBO
emitter cut-off current
IC = 0; VEB = 1.5 V
7
mA
V(BR)CBO
collector-base breakdown voltage
IC = 180 mA
65
V
V(BR)CES
collector-emitter breakdown voltage
IC = 180 mA; VBE = 0
65
V
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common-base test circuit as shown in Fig.3.
MODE OF
OPERATION
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
1.09
50
≥800
typ. 900
≥6
typ. 6.5
≥40
typ. 48
tp = 112 µs; δ = 1%
1.03 to 1.09
50
typ. 750
typ. 5.7
typ. 36
tp = 32 µs; δ = 1%
1.09
50
typ. 870
typ. 6.3
typ. 46
CONDITIONS
tp = 10 µs; δ = 1%
Class C
1997 Feb 18
tp = 0.5 µs; δ = 50%
4
Philips Semiconductors
Product specification
Microwave power transistor
MF1011B900Y
30
handbook, full pagewidth
18.5
30
4.0
7.5
7.5
1.6 4.0
10.0
1.0 5.9
20.0
40
5.0
10.5
21.0
0.64
40
0.64
C4
VCC
C5
C2
C3
L1
output
input
R/L3
C1
L2
C7
C6
MLC720
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.3 Broadband test circuit.
1997 Feb 18
5
Philips Semiconductors
Product specification
Microwave power transistor
MF1011B900Y
List of components (see Fig.3)
COMPONENT
DESCRIPTION
VALUE
C1
capacitor
100 pF
C2,C3
tantalum capacitor
10 µF; 50 V
C4
electrolytic capacitor
1 mF; 63 V
C5
feedthrough bypass capacitor
C6, C7
variable gigatrim capacitor
L1, L2
0.65 mm copper wire; total length = 26 mm;
height of loop = 10 mm
L3
4 turns 0.65 mm copper wire;
total length = 48 mm
R
resistor
ORDERING INFORMATION
ATC 100A101kp50x
Erie 1250-003
0.8 to 8 pF
Tekelec 729-1
4.7 Ω; 0.5 W
MLC722
1000
PL
(W)
MLC723
60
handbook, halfpage
handbook, halfpage
ηc
(%)
800
40
600
400
20
200
0
0
0
50
100
150
200
250
P i (W)
0
100
150
200
250
P i (W)
Class C pulse operation.
tp = 10 µs; δ = 1%; VCC = 50 V; f = 1.09 GHz.
In broadband test circuit as shown in Fig.3.
Class C pulse operation.
tp = 10 µs; δ = 1%; VCC = 50 V; f = 1.09 GHz.
In broadband test circuit as shown in Fig.3.
Fig.5
Fig.4 Load power as a function of input power.
1997 Feb 18
50
6
Collector efficiency as a function of
input power.
Philips Semiconductors
Product specification
Microwave power transistor
MF1011B900Y
Input and optimum load impedances
VCE = 50 V; typical values at PL = PL1 (see Figs 6 and 7).
f
(GHz)
Zi
(Ω)
ZL
(Ω)
1.03
0.22 + j0.19
0.14 − j0.10
1.09
0.23 + j0.12
0.12 − j0.08
1.15
0.19 + j0.06
0.09 − j0.09
1
handbook, full pagewidth
0.5
2
0.2
5
1.03 GHz
Zi
0
10
1.09 GHz
+j
1.15 GHz
0.2
0.5
2
5
∞
10
–j
10
5
0.2
2
0.5
1
MLC724
VCC = 50 V; Zo = 10 Ω; Po = 240 W.
Fig.6 Input impedance as a function of frequency.
1997 Feb 18
7
Philips Semiconductors
Product specification
Microwave power transistor
MF1011B900Y
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
2
5
∞
10
1.09 GHz
–j
1.03 GHz
10
1.15 GHz
0.2
ZL
5
2
0.5
1
MLC725
VCC = 50 V; Zo = 50 Ω; Po = 240 W.
Fig.7 Optimum load impedance as a function of frequency.
1997 Feb 18
8
Philips Semiconductors
Product specification
Microwave power transistor
MF1011B900Y
PACKAGE OUTLINE
15.5 max
0.15 max
6
max
3.3
2.9
1.6 max
3
26 max
seating plane
3.7
max
2.7
min
1
9.85
max
3.3
3
3
2.7
min
2
MSA376
10.15
20.3
Dimensions in mm.
Torque on screws: max. 0.5 Nm.
Recommended screw: M3.
Recommended pitch for mounting screws: 19 mm.
Fig.8 SOT448A.
1997 Feb 18
10.3
10.0
9
Philips Semiconductors
Product specification
Microwave power transistor
MF1011B900Y
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 18
10
Philips Semiconductors
Product specification
Microwave power transistor
MF1011B900Y
NOTES
1997 Feb 18
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 18
Document order number:
9397 750 01691