PHILIPS PLB16030U

DISCRETE SEMICONDUCTORS
DATA SHEET
PLB16030U
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
• Input and output matching cell
allows an easier design of circuits
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
PLB16030U
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class B
narrowband amplifier.
MODE OF
OPERATION
Class B (CW)
f
(GHz)
1.6
VCC
(V)
PL
(W)
28
>30
ηC
(%)
Gp
(dB)
>7
>45
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
stable characteristics and excellent
lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
Zi; ZL
(Ω)
see Figs 5
and 6
PINNING - SOT437A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to flange
APPLICATIONS
Common base class B power
amplifiers at 1.6 GHz. Also suitable
for operation in the frequency range
1.4 to 1.8 GHz.
handbook, 4 columns
1
c
b
DESCRIPTION
3
e
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package with base connected
to flange.
2
Top view
MAM112
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16030U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
45
V
VCEO
collector-emitter voltage
open base
−
15
V
VCES
collector-emitter voltage
RBE = 0 Ω
−
40
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
2.6
A
Ptot
total power dissipation
−
40
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
Tmb = 75 °C
t ≤ 10 s; note 1
Note
1. Up to 0.3 mm from ceramic.
MCD395
MCD394
handbook,40
halfpage
handbook,60
halfpage
PL
(W)
Ptot
(W)
30
40
20
20
10
0
0
−50
0
50
100
150
200
Tmb (oC)
0
2
4
8
6
PSOURCE (W)
Ptot max = 40 W.
VCC = 28 V; f = 1.6 GHz.
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
1997 Feb 18
Fig.3 Load power as a function of source power.
3
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16030U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
2.4
K/W
0.3
K/W
Tj = 100 °C
Rth j-mb
thermal resistance from junction to mounting base
Rth mb-h
thermal resistance from mounting base to heatsink note 1
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
collector cut-off current
MAX
UNIT
VCB = 28 V; IE = 0
0.9
mA
VCB = 35 V; IE = 0
1.8
mA
ICES
collector cut-off current
VCE = 28 V; RBE = 0 Ω
1.8
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
90
µA
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common-base test circuit and working in CW class B mode.
MODE OF
OPERATION
f
(GHz)
PL
(W)
VCC
(V)
ηC
(%)
Gp
(dB)
Class B (CW); note 1
1.6
28
≥30
≥7;
typ. 8.2
≥45;
typ. 52
Class B - 100 ms 50%
1.6
28
typ. 38
typ. 8.8
typ. 56
Zi; ZL
(Ω)
see Figs 5 and 6
Note
1. May be used for narrowband or broadband amplifiers within the frequency range 1.4 to 1.8 GHz. Operation below
1.4 GHz may damage the transistor due to resonance of the internal output prematching circuit.
List of components (see Fig.4)
COMPONENT
DESCRIPTION
VALUE
L1, L2
5 turns 0.2 mm diameter copper wire
C1
DC blocking capacitor
C2
feedthrough bypass capacitor
C3, C4
trimmer capacitor
0.4 to 2.5 pF
C5
electrolytic capacitor
150 µF
1997 Feb 18
DIMENSIONS
CATALOGUE NO.
int. dia. 2 mm
100 pF
Erie, ref.1250-003
4
Tekelec AT-3-7281SL
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16030U
30 mm
handbook, full pagewidth
30 mm
4
5
9.5
3
5
2.5
10
5.5 1
12.5
2
20
10
40 mm
40 mm
1.2
1.2
5
8
14
MBC433 - 1
handbook, full pagewidth
−VCC
(
+VCC
C5
)
C2
L1
input
output
L2
C1
C4
C3
MBC434
Substrate: Teflon fibreglass.
Thickness: 0.4 mm.
Permittivity: εr = 2.55.
Fig.4 Narrowband test circuit.
1997 Feb 18
5
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16030U
1
handbook, full pagewidth
0.5
2
1.4 GHz
Zi
0.2
1.6 GHz
1.8 GHz
5
10
+j
0
0.2
0.5
1
2
5
10
∞
–j
10
5
0.2
2
0.5
MCD396 - 1
1
VCC = 28 V; Zo = 10 Ω; PO = 30 W.
Fig.5 Input impedance as a function of frequency; typical values.
1
handbook, full pagewidth
0.5
2
0.2
5
10
+j
0
0.2
0.5
1
2
5
10
∞
1.6 GHz
–j
1.4 GHz
1.8 GHz
10
ZL
0.2
5
2
0.5
1
MCD397 - 1
VCC = 28 V; Zo = 10 Ω; PO = 30 W.
Fig.6 Optimum load impedance as a function of frequency; typical values.
1997 Feb 18
6
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16030U
PACKAGE OUTLINE
19.1 max
0.13
max
6.5
max
1.7
max
4.8
max
2.3
2.0
seating
plane
14.22
0.25 M
1
4.5 min
6.5
6.2
O 3.3
3
4.5 min
2
1.7 max
Dimensions in mm.
Torque on nut: max 0.5 Nm.
Recommended screw: M3.
Recommended pitch for mounting screw: 19 mm.
Fig.7 SOT437A.
1997 Feb 18
7
MBB945
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16030U
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 18
8
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16030U
NOTES
1997 Feb 18
9
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16030U
NOTES
1997 Feb 18
10
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16030U
NOTES
1997 Feb 18
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 18
Document order number:
9397 750 01723