DISCRETE SEMICONDUCTORS DATA SHEET LX1214E500X NPN microwave power transistor Preliminary specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Preliminary specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very good stability of the characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance • Internal input and output prematching ensures a good stability and allows an easier design of wideband circuits. APPLICATIONS LX1214E500X QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB. MODE OF OPERATION f (GHz) VCE (V) ICQ (A) Class AB (CW) 1.2 to 1.4 24 0.15 PL1 (W) Gpo (dB) ηC (%) Zi; ZL (Ω) typ. 50 typ. 11 typ. 50 see Figs 6 and 7 PINNING - SOT439A PIN DESCRIPTION 1 collector 2 base 3 emitter connected to flange 1 handbook, 4 columns c Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.2 and 1.4 GHz. b 3 3 e 2 MAM045 Top view DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with emitter connected to flange. Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 45 V VCER collector-emitter voltage RBE = 220 Ω − 30 V VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 9 A Pi input power f = 1.2 to 1.4 GHz; VCC = 24 V; class AB − 7 W Ptot total power dissipation Tmb = 75 °C − 70 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C Tsld soldering temperature − 235 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MLC436 10 MLC437 80 handbook, halfpage handbook, halfpage P tot (W) IC (A) 60 I 40 1 20 10 1 1 10 V CE (V) 0 10 2 0 50 100 150 200 o T mb ( C) Tmb ≤ 75 °C. (1) Region of permissible DC operation. Fig.2 DC SOAR. 1997 Feb 18 Fig.3 Power derating curve. 3 Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting base Tj = 100 °C 1.3 K/W Rth mb-h thermal resistance from mounting base to heatsink note 1 0.2 K/W MAX. UNIT Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. ICBO collector cut-off current IE = 0; VCB = 20 V − 4.5 mA V(BR)CBO collector-base breakdown voltage IC = 22 mA 45 − V V(BR)CER collector-emitter breakdown voltage IC = 150 mA; RBE = 220 Ω 30 − V V(BR)EBO emitter-base breakdown voltage IC = 22 mA 3 − V hFE DC current gain IC = 4.5 A; VCE = 3 V 15 100 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common-emitter class AB amplifier. MODE OF OPERATION f (GHz) VCE (V) ICQ (A) PL1 (W) Gpo (dB) ηC (%) Zi; ZL (Ω) Class AB (CW) 1.2 to 1.4 24 0.15 typ. 50 typ. 11 typ. 50 see Figs 6 and 7 1997 Feb 18 4 Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X 30 handbook, full pagewidth 4.5 1.0 6.0 4.0 30 5.0 3.0 4.5 2.5 5.0 8.0 8.0 1.0 5.0 2.5 40 40 11.0 10.5 0.7 2.5 3.0 0.7 5.0 5.0 7.0 C3 V BB C4 4.0 VCC F1 input L2 L1 C1 output C2 MLC470 The test circuit is split into two independent halves each being 30 × 40 mm in size. Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.4 Test circuit. 1997 Feb 18 5 Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X PREMATCHING TEST CIRCUIT handbook, full pagewidth BIAS CIRCUIT VCC R1 C4 TR1 C3 R2 F1 P1 D1 R3 L2 C5 L1 DUT D2 MLC727 Fig.5 Class AB bias circuit. List of components (see Figs 4 and 5) COMPONENT DESCRIPTION VALUE ORDERING INFORMATION TR1 transistor, BD239 or equivalent C1, C2 DC blocking chip capacitor 100 pF ATC 100A1201kp C3, C4 feedthrough bypass capacitor 1500 pF Erie1250-003 C5 electrolytic capacitor 10 µF, >30 V D1 diode BY239 or equivalent; note 1 D2 diode BY239 or equivalent; note 2 L1 3.5 turns 0.5 mm copper wire; internal diameter = 2 mm L2 3 turns 0.5 mm copper wire; internal diameter = 2 mm P1 linear potentiometer 4.7 kΩ R1 resistor 100 Ω, 0.25 W R2 resistor 1 kΩ, 0.25 W R3 resistor 56 Ω, 0.25 W F1 ferrite bead Philips tube, 12NC = 4330 030 43081 4.2 × 2.2 × 3.2 mm (4B1) Notes 1. In thermal contact with TR1. 2. In thermal contact with DUT. 1997 Feb 18 6 Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X Input and optimum load impedances VCE = 24 V; ICQ = 0.15 A; typical values at PL = PL1. f (GHz) Zi (Ω) ZL (Ω) 1.2 1.8 + j2.6 4.0 − j2.2 1.3 4.0 + j2.1 3.8 − j0.5 1.4 3.2 + j1.0 3.2 − j0.5 1 handbook, full pagewidth 0.5 0.2 2 1.2 GHz 5 1.3 10 Zi +j 0 0.2 0.5 2 5 ∞ 10 1.4 –j 10 5 0.2 2 0.5 1 MLC445 VCE = 24 V; Zo = 10 Ω; ICQ = 0.15 A. Fig.6 Input impedance as a function of frequency; typical values at PL = PL1. 1997 Feb 18 7 Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 –j 0.2 0.5 2 5 ∞ 10 1.4 GHz 1.3 1.2 10 ZL 5 0.2 2 0.5 1 MLC446 VCE = 24 V; Zo = 10 Ω; ICQ = 0.15 A. Fig.7 Optimum load impedance as a function of frequency; typical values at PL = PL1. 1997 Feb 18 8 Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X PACKAGE OUTLINE 12.85 max handbook, full pagewidth 0.15 max 6 max 3.3 2.9 1.6 max 3 23 max seating plane 3.7 max 2.7 min 1 9.85 max 3.3 2.7 min 2 MBC881 8.25 16.5 Dimensions in mm. Torque on screws: max. 0.5 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. Fig.8 SOT439A. 1997 Feb 18 9 10.3 10.0 Philips Semiconductors Preliminary specification NPN microwave power transistor LX1214E500X DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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