PHILIPS PZB16035U

DISCRETE SEMICONDUCTORS
DATA SHEET
PZB16035U
NPN microwave power transistor
Product specification
Supersedes data of June 1992
File under Discrete Semiconductors, SC15
1997 Feb 18
Philips Semiconductors
Product specification
NPN microwave power transistor
PZB16035U
FEATURES
PINNING - SOT443A
• Interdigitated structure provides high emitter efficiency
PIN
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
1
collector
• Gold metallization realizes very stable characteristics
and excellent lifetime
2
emitter
3
base connected to flange
DESCRIPTION
• Multicell geometry gives good balance of dissipated
power and low thermal resistance.
• Input matching cell improves input impedance and
allows an easier design of wideband circuits.
handbook, halfpage
1
c
APPLICATIONS
b
• Common base class-B power amplifiers under CW
conditions in military and professional applications up to
1.6 GHz.
3
e
2
Top view
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
MAM314
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance up to Tmb = 25 °C in a common base class-B selective amplifier.
MODE OF OPERATION
Class-B (CW)
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Zi; ZL
(Ω)
1.55
28
≥35
≥8
≥45
see Figs 5
and 6
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2
Philips Semiconductors
Product specification
NPN microwave power transistor
PZB16035U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
15
V
VCES
collector-emitter voltage
RBE = 0 Ω
−
35
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
4
A
Ptot
total power dissipation
−
45
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
Up to 0.2 mm from the flange; −
t < 10 s
235
°C
Tmb = 75 °C
MGD968
60
handbook, halfpage
Ptot
(W)
40
20
0
0
50
Fig.2
1997 Feb 18
100
150
200
Tmb (°C)
Power derating curve.
3
Philips Semiconductors
Product specification
NPN microwave power transistor
PZB16035U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base
Tj = 75 °C
2.2
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink
Tj = 75 °C; note 1
0.2
K/W
MAX.
UNIT
Note
1. See “Mounting recommendations in the General part of handbook SC15”.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
CONDITIONS
collector cut-off current
TYP.
VCB = 40 V; IE = 0
−
10
mA
VCB = 30 V; IE = 0
−
5
mA
ICES
collector cut-off current
VCER = 35 V; RBE = 0
−
50
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
−
200
µA
Ccb
collector-base capacitance
VCB = 28 V; IE = IC = 0
17
−
pF
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common base class B selective amplifier; note 1.
MODE OF
OPERATION
Class B (CW)
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Zi; ZL
(Ω)
1.55
28
>35; typ. 38
>8; typ. 9.8
>45; typ. 50
see Figs 5 and 6
Note
1. Amplifier consists of pre-matching test-circuit with complementary input and output slug tuners.
handbook, full pagewidth
input
50 Ω
,,,,,,
,,,,,,
,,,,,,
,,,,,,
4
9
,,,,,,
,,,,,,
,,
,,,,,,
,,,,,,
6.5
6
14
14
6
5.5
9
3
output
50 Ω
0.65
0.65
6
6
100 pF
(ATC)
MGK062
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.65 mm.
Permittivity: εr = 10.
Fig.3 Prematching test circuit boards for CW, class B operation at 1.55 GHz.
1997 Feb 18
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PZB16035U
MGD986
40
handbook, halfpage
PL
PL
(W)
36
ηC
(%)
ηC
50
32
40
2
VSWR
VSWR
1.55
1.50
f (GHz)
1
1.60
VCC = 28 V; Tmb = 25 °C.
Fig.4
Load power, efficiency and VSWR as
functions of frequency.
1
handbook, full pagewidth
0.5
2
1.6 GHz
1.55
1.5
0.2
5
10
+j
0
0.2
0.5
1
2
5
10
5Ω
−j
∞
10
5
0.2
2
0.5
1
MGL021
PL = 38 W; Zo = 5 Ω.
Fig.5 Input impedance as a function of frequency; typical values.
1997 Feb 18
5
Philips Semiconductors
Product specification
NPN microwave power transistor
PZB16035U
1
handbook, full pagewidth
0.5
2
0.2
5
10
1.5 GHz
+j
0
−j
0.2
1.55
0.5
1.6
1
2
5
10
5Ω
∞
10
5
0.2
2
0,5
1
MGL020
PL = 38 W; Zo = 5 Ω.
Fig.6 Optimum load impedance as a function of frequency; typical values.
1997 Feb 18
6
Philips Semiconductors
Product specification
NPN microwave power transistor
PZB16035U
PACKAGE OUTLINE
24 max
handbook, full pagewidth
0.5 Y
0.1
6.4
max
3.5
2.9
3
1.7 max
seating plane
Y
3.1
1
4 min
0.5 X
X
10.5
max
3.4
3.2
10.5
max
23
max
0.5 X
2
MBC663
16.5
0.5 Y
Dimensions in mm.
Torque on screw: Max. 0.5 Nm.
Recommended screw: M3.
Fig.7 SOT443A.
1997 Feb 18
7
Philips Semiconductors
Product specification
NPN microwave power transistor
PZB16035U
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 18
8
Philips Semiconductors
Product specification
NPN microwave power transistor
PZB16035U
NOTES
1997 Feb 18
9
Philips Semiconductors
Product specification
NPN microwave power transistor
PZB16035U
NOTES
1997 Feb 18
10
Philips Semiconductors
Product specification
NPN microwave power transistor
PZB16035U
NOTES
1997 Feb 18
11
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© Philips Electronics N.V. 1997
SCA53
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127147/00/02/pp12
Date of release: 1997 Feb 18
Document order number:
9397 750 01706