DISCRETE SEMICONDUCTORS DATA SHEET PZB16035U NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor PZB16035U FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR 1 collector • Gold metallization realizes very stable characteristics and excellent lifetime 2 emitter 3 base connected to flange DESCRIPTION • Multicell geometry gives good balance of dissipated power and low thermal resistance. • Input matching cell improves input impedance and allows an easier design of wideband circuits. handbook, halfpage 1 c APPLICATIONS b • Common base class-B power amplifiers under CW conditions in military and professional applications up to 1.6 GHz. 3 e 2 Top view DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. MAM314 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance up to Tmb = 25 °C in a common base class-B selective amplifier. MODE OF OPERATION Class-B (CW) f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi; ZL (Ω) 1.55 28 ≥35 ≥8 ≥45 see Figs 5 and 6 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 18 2 Philips Semiconductors Product specification NPN microwave power transistor PZB16035U LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 15 V VCES collector-emitter voltage RBE = 0 Ω − 35 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 4 A Ptot total power dissipation − 45 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature Up to 0.2 mm from the flange; − t < 10 s 235 °C Tmb = 75 °C MGD968 60 handbook, halfpage Ptot (W) 40 20 0 0 50 Fig.2 1997 Feb 18 100 150 200 Tmb (°C) Power derating curve. 3 Philips Semiconductors Product specification NPN microwave power transistor PZB16035U THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting-base Tj = 75 °C 2.2 K/W Rth mb-h thermal resistance from mounting-base to heatsink Tj = 75 °C; note 1 0.2 K/W MAX. UNIT Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO CONDITIONS collector cut-off current TYP. VCB = 40 V; IE = 0 − 10 mA VCB = 30 V; IE = 0 − 5 mA ICES collector cut-off current VCER = 35 V; RBE = 0 − 50 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − 200 µA Ccb collector-base capacitance VCB = 28 V; IE = IC = 0 17 − pF APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common base class B selective amplifier; note 1. MODE OF OPERATION Class B (CW) f (GHz) VCC (V) PL (W) Gp (dB) ηC (%) Zi; ZL (Ω) 1.55 28 >35; typ. 38 >8; typ. 9.8 >45; typ. 50 see Figs 5 and 6 Note 1. Amplifier consists of pre-matching test-circuit with complementary input and output slug tuners. handbook, full pagewidth input 50 Ω ,,,,,, ,,,,,, ,,,,,, ,,,,,, 4 9 ,,,,,, ,,,,,, ,, ,,,,,, ,,,,,, 6.5 6 14 14 6 5.5 9 3 output 50 Ω 0.65 0.65 6 6 100 pF (ATC) MGK062 Dimensions in mm. Substrate: Epsilam printed-circuit board. Thickness: 0.65 mm. Permittivity: εr = 10. Fig.3 Prematching test circuit boards for CW, class B operation at 1.55 GHz. 1997 Feb 18 4 Philips Semiconductors Product specification NPN microwave power transistor PZB16035U MGD986 40 handbook, halfpage PL PL (W) 36 ηC (%) ηC 50 32 40 2 VSWR VSWR 1.55 1.50 f (GHz) 1 1.60 VCC = 28 V; Tmb = 25 °C. Fig.4 Load power, efficiency and VSWR as functions of frequency. 1 handbook, full pagewidth 0.5 2 1.6 GHz 1.55 1.5 0.2 5 10 +j 0 0.2 0.5 1 2 5 10 5Ω −j ∞ 10 5 0.2 2 0.5 1 MGL021 PL = 38 W; Zo = 5 Ω. Fig.5 Input impedance as a function of frequency; typical values. 1997 Feb 18 5 Philips Semiconductors Product specification NPN microwave power transistor PZB16035U 1 handbook, full pagewidth 0.5 2 0.2 5 10 1.5 GHz +j 0 −j 0.2 1.55 0.5 1.6 1 2 5 10 5Ω ∞ 10 5 0.2 2 0,5 1 MGL020 PL = 38 W; Zo = 5 Ω. Fig.6 Optimum load impedance as a function of frequency; typical values. 1997 Feb 18 6 Philips Semiconductors Product specification NPN microwave power transistor PZB16035U PACKAGE OUTLINE 24 max handbook, full pagewidth 0.5 Y 0.1 6.4 max 3.5 2.9 3 1.7 max seating plane Y 3.1 1 4 min 0.5 X X 10.5 max 3.4 3.2 10.5 max 23 max 0.5 X 2 MBC663 16.5 0.5 Y Dimensions in mm. Torque on screw: Max. 0.5 Nm. Recommended screw: M3. Fig.7 SOT443A. 1997 Feb 18 7 Philips Semiconductors Product specification NPN microwave power transistor PZB16035U DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 18 8 Philips Semiconductors Product specification NPN microwave power transistor PZB16035U NOTES 1997 Feb 18 9 Philips Semiconductors Product specification NPN microwave power transistor PZB16035U NOTES 1997 Feb 18 10 Philips Semiconductors Product specification NPN microwave power transistor PZB16035U NOTES 1997 Feb 18 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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