PHILIPS RX1214B300Y

DISCRETE SEMICONDUCTORS
DATA SHEET
RX1214B300Y
NPN microwave power transistor
Product specification
Supersedes data of June 1992
1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
RX1214B300Y
FEATURES
PINNING - SOT439A
• Interdigitated structure provides high emitter efficiency
PIN
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
1
collector
• Gold metallization realizes very stable characteristics
and excellent lifetime
2
emitter
3
base connected to flange
DESCRIPTION
• Multicell geometry improves power sharing and reduces
thermal resistance
• Internal input and output matching networks for an easy
circuit design.
1
olumns
c
APPLICATIONS
b
• Common base class-C wideband amplifiers operating
under pulsed conditions, recommended for L-band
radar applications.
3
3
e
2
MAM045
Top view
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package with the base
connected to the flange.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance at Tmb ≤ 25 °C in a common base class-C wideband amplifier.
MODE OF OPERATION
Class-C
tp = 150 µs; δ = 5 %
f
(GHz)
VCC
(V)
PL
(W)
GP
(dB)
ηC
(%)
Zi; ZL
(Ω)
1.2 to 1.4
50
≥250
≥7
≥35
see Fig 6
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
RX1214B300Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
65
V
VCES
collector-emitter voltage
RBE = 0 Ω
−
60
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
tp ≤ 150 µs; δ = 5 %
−
21
A
Ptot
total power dissipation
tp ≤ 150 µs; δ = 5 %;
Tmb = 75 °C
−
570
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
at 0.2 mm from case; t ≤ 10 s −
235
°C
MGD976
800
handbook, halfpage
Ptot
(W)
600
400
200
0
−50
0
50
100
150
200
Tmb (°C)
tp = 150 µs; δ = 5 %
Fig.2
1997 Feb 19
Power derating curve.
3
Philips Semiconductors
Product specification
NPN microwave power transistor
RX1214B300Y
THERMAL CHARACTERISTICS
Tj = 100 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
0.8
K/W
Rth j-mb
thermal resistance from junction to mounting-base
Rth mb-h
thermal resistance from mounting base to heatsink
note 1
0.2
K/W
Zth j-h
thermal impedance from junction to heatsink
tp = 150 µs; δ = 5 %;
notes 1 and 2
0.22
K/W
MAX.
UNIT
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
V(BR)CBO
collector-base breakdown voltage
IC = 140 mA; IE = 0
65
−
V
V(BR)CES
collector-emitter breakdown voltage
IC = 140 mA; RBE = 0 Ω
60
−
V
V(BR)EBO
emitter-base breakdown voltage
IC = 0; IE = 20 mA
3
−
V
ICBO
collector cut-off current
VCB = 50 V; IE = 0
−
14
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
−
1.4
mA
APPLICATION INFORMATION
Microwave performance at Tmb ≤ 25 °C in a common base class C wideband amplifier.
f
(GHz)
VCC
(V)
PL
(W)
GP
(dB)
ηC
(%)
Zi; ZL
(Ω)
Pulsed
tp = 150 µs; δ = 5 %
1.2 to 1.4
50
≥250
typ. 320
≥7
typ. 8
≥35
typ. 40
see Fig 6
tp = 300 µs; δ = 10 %
1.2 to 1.4
50
typ. 300
typ. 7.5
typ. 35
see Fig 6
MODE OF OPERATION
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
RX1214B300Y
,,,,,,,,,,,,,,,,
,,,
,,,,,,,,,
,,,,,,,
,
, ,, ,,,,,,,
,,, ,,,
,
,,,,,,,,,
,,,,,,,,,
,,
,,,,,,,,,,
,,
,,,,
,,
12
handbook, full pagewidth
4
2.5
3
1.5
0.59
0.59
1.5
input
50 Ω
output
50 Ω
2
4
12.5
10.5
2
10
1
1.5
5
1
3.5
0.5
4
1
MGK065
1.5
Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.3 Wideband test circuit board for 1.2 to1.4 GHz application.
MBH904
400
MBH903
10
handbook, halfpage
handbook, halfpage
Gp
(dB)
PL
(W)
Pin = 60 W
9
8
300
40 W
7
200
1.18
1.26
1.34
6
1.18
1.42 f (GHz) 1.5
tp = 150 µs; δ = 5 %.
Fig.4
1997 Feb 19
1.26
1.34
f (GHz)
1.42
tp = 150 µs; δ = 5 %.
Load power as a function of frequency;
typical values.
Fig.5
5
Power gain as a function of frequency;
typical values.
Philips Semiconductors
Product specification
NPN microwave power transistor
RX1214B300Y
1
handbook, full pagewidth
0.5
2
0.2
10
1.3
+j
1.4 GHz
0.5
0.2
0
–
j
5
Z i 1.2
1
2
5
10
∞
1.4
1.3
ZL
10
1.2 GHz
0.2
5
2
0.5
1
MCD631
Zo = 5 Ω; VCC = 50 V; PL = 250 W; Tmb = 25 °C; tp = 150 µs; δ = 5 %; class C operation.
Fig.6 Input and optimum load impedances as functions of frequency; typical values.
1997 Feb 19
6
Philips Semiconductors
Product specification
NPN microwave power transistor
RX1214B300Y
PACKAGE OUTLINE
12.85 max
handbook, full pagewidth
0.15 max
6
max
3.3
2.9
1.6 max
3
23 max
seating plane
3.7
max
2.7
min
1
9.85
max
3.3
2.7
min
2
MBC881
8.25
16.5
Dimensions in mm.
Torque on nut: Max. 0.4 Nm
Recommended screw: M3
Recommended pitch for mounting screw: 19 mm.
Fig.7 SOT439A.
1997 Feb 19
7
10.3
10.0
Philips Semiconductors
Product specification
NPN microwave power transistor
RX1214B300Y
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 19
8
Philips Semiconductors
Product specification
NPN microwave power transistor
RX1214B300Y
NOTES
1997 Feb 19
9
Philips Semiconductors
Product specification
NPN microwave power transistor
RX1214B300Y
NOTES
1997 Feb 19
10
Philips Semiconductors
Product specification
NPN microwave power transistor
RX1214B300Y
NOTES
1997 Feb 19
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 1949
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580/xxx
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2870, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 19
Document order number:
9397 750 01704