DISCRETE SEMICONDUCTORS DATA SHEET LTE21015R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor LTE21015R PINNING - SOT440A FEATURES • Interdigitated structure provides high emitter efficiency PIN DESCRIPTION • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR 1 collector • Gold metallization realizes very stable characteristics and excellent lifetime 2 base 3 emitter connected to flange • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input matching cell allows an easier design of circuits. 1 olumns c APPLICATIONS b • Common emitter class-A linear power amplifiers up to 2 GHz. 3 2 e MAM131 Top view DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. Marking code: 436 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class-A amplifier. MODE OF OPERATION Class-A f (GHz) VCE (V) IC (mA) PL1 (W) Gpo (dB) Zi; ZL (Ω) 2 16 250 ≥1.5 ≥8.5 see Figs 6 and 7 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor LTE21015R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCER collector-emitter voltage RBE = 250 Ω − 20 V VCEO collector-emitter voltage open base − 16 V VEBO emitter-base voltage open collector − 3 V IC collector current (DC) − 450 mA Ptot total power dissipation − 7.5 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C Tmb ≤ 75 °C up to 0.2 mm from ceramic; t ≤ 10 s MGL060 1 MGL061 10 handbook, halfpage handbook, halfpage Ptot (W) 8 IC (A) 0.16 6 10−1 4 Ι 10−2 1 ΙΙ 10 16 2 VCER (V) 0 −50 102 Tmb = 75 °C. (Ι) Region of permissible DC operation. (ΙΙ) Permissible extension provided RBE < 250 Ω. 100 Tmb (°C) 200 Ptot max = 7.5 W Fig.3 Fig.2 DC SOAR. 1997 Feb 19 0 3 Power dissipation derating as a function of mounting-base temperature. Philips Semiconductors Product specification NPN microwave power transistor LTE21015R THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX. UNIT Rth j-mb thermal resistance from junction to mounting-base Tj = 70 °C 12 K/W Rth mb-h thermal resistance from mounting-base to heatsink note1 0.7 K/W MAX. UNIT Note 1. See “Mounting recommendations in the General part of handbook SC15”. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector cut-off current MIN. VCB = 20 V; IE = 0 − 150 µA VCB = 40 V; IE = 0 − 1 mA VCE = 20 V; RBE = 270 Ω − 0.5 mA µA ICER collector cut-off current IEBO emitter cut-off current VEB = 1.5 V; IC = 0 − 1.5 hFE DC current gain VCE = 5 V; IC = 250 mA 15 150 APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C in a common emitter class-A test circuit.(see Fig.4) MODE OF OPERATION Class-A (CW) f (GHz) VCC (V)(1) IC (mA) (1) PL1 (W) (2) Gpo (dB) (3) Zi; ZL (Ω) 2 16 250 ≥1.5 typ. 1.8 ≥8.5 typ. 9.5 see Figs 6 and 7 Notes 1. IC and VCE regulated. 2. Load power for 1 dB compression of gain. 3. Linear gain. 1997 Feb 19 4 Philips Semiconductors Product specification NPN microwave power transistor LTE21015R 10.5 handbook, full pagewidth 1.5 20 5 16 4 7.5 2.2 4 1.4 output 50 Ω input 50 Ω 5 10 4 8 6.5 8 3 MSA099 Dimensions in mm. Substrate: Teflon fibreglass. Thickness: 0.8 mm. Permittivity: εr = 2.55. Fig.4 Narrowband test circuit. MGL062 3 handbook, halfpage PL (W) 2 (1) (2) 1 0 0 0.1 0.2 0.3 PS (W) 0.4 VCE = 16 V; IC = 250 mA (regulated). In narrowband test circuit as shown in Fig.4 (1) Gpo = 9.5 dB. (2) PL1 = 1.8 W. Fig.5 Load power as a function of source power. 1997 Feb 19 5 Philips Semiconductors Product specification NPN microwave power transistor LTE21015R 1 handbook, full pagewidth 0.5 2 4 3 0.2 4.2 GHz 3.5 2.5 2 5 Zi 10 1.5 +j 1 0 0.2 0.5 1 2 5 ∞ 10 – j 10 5 0.2 2 0.5 1 MCD629 VCE = 16 V; Zo = 50 Ω; IC = 250 mA. Fig.6 Input impedance as a function of frequency for PL1; associated with optimum load impedance. 1 handbook, full pagewidth 0.5 ZL 0.2 2.5 2 2 1.5 5 1 GHz 10 3 +j 0.2 0 0.5 1 2 5 10 ∞ 3.5 –j 4 10 4.2 5 0.2 2 0.5 1 MCD628 VCE = 16 V; Zo = 50 Ω; IC = 250 mA. Fig.7 Optimum load impedance as a function of frequency for PL1; associated with input impedance. 1997 Feb 19 6 Philips Semiconductors Product specification NPN microwave power transistor LTE21015R PACKAGE OUTLINE 0.1 handbook, full pagewidth 3.45 2.90 1.7 max 4.5 max 3 20.5 max seating plane 0.25 M 1.0 1 4.5 min O 0.25 M 3.2 2.9 5.1 3.4 (1) 2 2.0 7.1 14.2 Dimensions in mm. Torque on screw: Max. 0.4 Nm Recommended screw: M2.5 Fig.8 SOT440A. 1997 Feb 19 7 MBC888 5.5 max 4.5 min Philips Semiconductors Product specification NPN microwave power transistor LTE21015R DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 8 Philips Semiconductors Product specification NPN microwave power transistor LTE21015R NOTES 1997 Feb 19 9 Philips Semiconductors Product specification NPN microwave power transistor LTE21015R NOTES 1997 Feb 19 10 Philips Semiconductors Product specification NPN microwave power transistor LTE21015R NOTES 1997 Feb 19 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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