DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A • Interdigitated structure; high emitter efficiency PIN DESCRIPTION • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR 1 collector • Gold metallization realizes very stable characteristics and excellent lifetime 2 emitter 3 base connected to flange • Multicell geometry gives good balance of dissipated power and low thermal resistance • Input and output matching cell allows an easier design of circuits. 1 olumns c APPLICATIONS b Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application. 3 3 e 2 MAM045 Top view DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier. MODE OF OPERATION f (GHz) VCC (V) PL (W) Gpo (dB) ηC (%) Class C tp = 10 µs; δ = 10% 0.960 to 1.215 50 >325 >7 >40 Zi/ZL (Ω) see Figs 7 and 8 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1997 Feb 19 2 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 65 V VCES collector-emitter voltage RBE = 0 Ω − 60 V VCEO collector-emitter voltage open base − 20 V VEBO emitter-base voltage open collector − 3 V IC collector current tp ≤ 10 µs; δ ≤ 10% − 21 A Ptot total power dissipation (peak power) Tmb = 75 °C; tp ≤ 10 µs; δ ≤ 10% − 960 W Tstg storage temperature −65 +200 °C Tj operating junction temperature − 200 °C Tsld soldering temperature − 235 °C t ≤ 10 s; note 1 Note 1. Up to 0.2 mm from ceramic. MGL054 1000 handbook, halfpage Ptot (W) 800 600 400 200 0 −50 0 100 Tmb (°C) 200 tp = 10 µs; δ = 10%; Ptot max = 960 W. Fig.2 Maximum power dissipation derating as a function of mounting base temperature. 1997 Feb 19 3 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y THERMAL CHARACTERISTICS Tj = 125 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base CW Rth mb-h thermal resistance from mounting base to heatsink CW; note 1 Zth j-h thermal impedance from junction to heatsink MAX. UNIT 1.7 K/W 0.2 K/W 0.13 K/W MAX. UNIT tp = 10 µs; δ = 10% notes 1 and 2 Notes 1. See “Mounting recommendations in the General part of handbook SC19a”. 2. Equivalent thermal impedance under nominal pulse microwave operating conditions. CHARACTERISTICS Tmb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS collector cut-off current VCB = 65 V; IE = 0 140 mA VCB = 50 V; IE = 0 14 mA ICES collector cut-off current VCE = 60 V; RBE = 0 Ω 140 mA IEBO emitter cut-off current VEB = 1.5 V; IC = 0 1.4 mA APPLICATION INFORMATION Microwave performance up to Tmb = 25 °C measured in the test circuit as shown in Fig.6 and working in class C broadband in pulse mode; note 1. MODE OF OPERATION Class C; tp = 10 µs; δ = 10% tp = 300 µs; δ = 10%; see Fig.5 f (GHz) VCC (V)(2) PL (W) Gpo (dB) ηC (%) 0.960 to 1.215 50 >325 typ. 375 >7 typ. 7.6 >40 typ. 47 1.03 to 1.09 50 typ. 350 typ. 8 typ. 48 Zi/ZL (Ω) see Figs 7 and 8 Notes 1. Operating conditions and performance for other pulse formats can be made available on request. 2. VCC during pulse. 1997 Feb 19 4 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y MGL056 450 MGL055 50 handbook, halfpage handbook, halfpage PL (W) ηC (%) 400 45 350 0.95 1.05 1.15 f (GHz) 40 0.95 1.25 1.05 1.15 f (GHz) 1.25 VCC = 50 V; tp = 10 µs; δ = 10%. Fig.4 Fig.3 Load power as a function of frequency. (In broadband test circuit as shown in Fig.6) 1997 Feb 19 5 Collector efficiency as a function of frequency. (In broadband test circuit as shown in Fig.6) Philips Semiconductors Product specification NPN microwave power transistor handbook, full pagewidth 1 µs MX0912B351Y 1 µs 300 µs 3 ms MGK066 Fig.5 Pulse definition. List of components COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. L1 0.65 mm diameter copper wire − total length = 12 mm; height of loop = 9 mm − L2 4 turns 0.65 mm diameter copper wire − int. diameter. 3 mm; L = 5 mm − C1 DC block 100 pF C2 tantalum capacitor 10 µF; 50 V C3 electrolytic capacitor 470 µF; 63 V C4 feedthrough bypass capacitor C5, C6 variable gigatrim capacitor 1997 Feb 19 ATC, ref. 100A101KP50X Erie, ref. 1250-003 0.8 to 8 pF 6 Tekelec, ref. 729.1 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y 30 handbook, full pagewidth 15 30 2 5 3 1.5 5 5.5 5 3.5 7.5 2.5 3.5 1 40 40 0.635 0.7 4.5 7 5 3.2 11 21.5 24 MLC085 handbook, full pagewidth C3 VCC C2 L1 L2 C5 C1 C6 MLC086 Dimensions in mm. Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: εr = 10. Fig.6 Broadband test circuit. 1997 Feb 19 7 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y 1 handbook, full pagewidth 0.5 0.2 2 0.960 GHz 5 1.215 GHz 10 +j 0 0.2 0.5 1 2 5 ∞ 10 −j 10 5 0.2 2 0.5 MGL057 1 VCC = 50 V; Zo = 5 Ω; PL = 325 W. Fig.7 Input impedance as a function of frequency associated with optimum load impedance. 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 0.2 0.5 1 2 5 ∞ 10 −j 10 1.215 GHz 0.2 5 0.960 GHz 2 0.5 1 MGL058 VCC = 50 V; Zo = 5 Ω; PL = 325 W. Fig.8 Optimum load impedance as a function of frequency associated with input impedance. 1997 Feb 19 8 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y PACKAGE OUTLINE 12.85 max handbook, full pagewidth 0.15 max 6 max 3.3 2.9 1.6 max 3 23 max seating plane 3.7 max 2.7 min 1 9.85 max 3.3 2.7 min 2 MBC881 8.25 16.5 Dimensions in mm. Torque on screws: max. 0.4 Nm. Recommended screw: M3. Recommended pitch for mounting screws: 19 mm. Fig.9 SOT439A. 1997 Feb 19 9 10.3 10.0 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Feb 19 10 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y NOTES 1997 Feb 19 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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