BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f VDS PL Gp ηD tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) 2.9 to 3.3 32 130 12.5 47 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 130 W Power gain = 12.5 dB Efficiency = 47 % Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLS6G2933S-130 NXP Semiconductors LDMOS S-band radar power transistor 1.3 Applications S-band power amplifiers for radar applications in the 2.9 GHz to 3.3 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description 1 drain 2 gate 3 Simplified outline Graphic symbol 1 1 3 [1] source 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name BLS6G2933S-130 - Description Version ceramic earless flanged cavity package; 2 leads SOT922-1 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit VDS drain-source voltage - 60 V VGS gate-source voltage −0.5 +13 V ID drain current - 33 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Zth(j-mb) transient thermal impedance from junction Tcase = 85 °C; PL = 130 W to mounting base t = 100 μs; δ = 10 % 0.23 K/W tp = 200 μs; δ = 10 % 0.28 K/W tp = 300 μs; δ = 10 % 0.32 K/W tp = 100 μs; δ = 20 % 0.33 K/W p BLS6G2933S-130_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 Unit © NXP B.V. 2010. All rights reserved. 2 of 12 BLS6G2933S-130 NXP Semiconductors LDMOS S-band radar power transistor 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.6 mA 60 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 180 mA 1.4 1.8 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 4.2 μA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 27 33 - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 450 nA gfs forward transconductance VDS = 10 V; ID = 9 A 8.1 13 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 6.3 A - 0.085 0.135 Ω 7. Application information Table 7. Application information Mode of operation: pulsed RF; tp = 300 μs; δ = 10 %; RF performance at VDS = 32 V; IDq = 100 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. BLS6G2933S-130_3 Product data sheet Symbol Parameter Conditions Min Typ Max Unit PL output power VCC supply voltage PL = 130 W - 130 - W - - 32 V Gp power gain PL = 130 W 10 12.5 - dB RLin input return loss PL = 130 W 7.5 10 - dB PL(1dB) output power at 1 dB gain compression ηD drain efficiency PL = 130 W - 140 - W 40 47 - % Pdroop(pulse) pulse droop power PL = 130 W - 0 0.5 dB tr rise time PL = 130 W - 20 50 ns tf fall time PL = 130 W - 6 50 ns All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 3 of 12 BLS6G2933S-130 NXP Semiconductors LDMOS S-band radar power transistor Table 8. Typical impedance f ZS ZL GHz Ω Ω 2.9 2.2 − j7.6 4.5 − j5.6 3.0 2.5 − j6.6 4.3 − j5.7 3.1 3.2 − j5.6 4.0 − j5.8 3.2 4.5 − j4.8 3.6 − j5.8 3.3 6.8 − j5.3 3.2 − j5.8 drain ZL gate ZS 001aaf059 Fig 1. Definition of transistor impedance 7.1 Ruggedness in class-AB operation The BLS6G2933S-130 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 32 V; IDq = 100 mA; PL = 130 W; tp = 300 μs; δ = 10 %. BLS6G2933S-130_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 4 of 12 BLS6G2933S-130 NXP Semiconductors LDMOS S-band radar power transistor 7.2 Graphs 001aaj266 14 Gp (dB) 001aaj267 14 Gp (dB) (2) (3) (1) (2) (3) (1) 10 10 6 6 2 2 0 60 120 180 0 60 120 PL (W) VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %. VDS = 32 V; IDq = 100 mA; tp = 100 μs; δ = 20 %. (1) f = 2.9 GHz (1) f = 2.9 GHz (2) f = 3.1 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz (3) f = 3.3 GHz Fig 2. Power gain as a function of load power; typical values Fig 3. 001aaj268 60 ηD (%) Power gain as a function of load power; typical values 001aaj269 60 ηD (%) (1) (2) (1) (2) (3) 40 40 20 (3) 20 0 0 0 60 120 180 0 PL (W) VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %. (2) f = 3.1 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz (3) f = 3.3 GHz Drain efficiency as a function of load power; typical values Product data sheet 120 180 VDS = 32 V; IDq = 100 mA; tp = 100 μs; δ = 20 %. (1) f = 2.9 GHz BLS6G2933S-130_3 60 PL (W) (1) f = 2.9 GHz Fig 4. 180 PL (W) Fig 5. Drain efficiency as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 5 of 12 BLS6G2933S-130 NXP Semiconductors LDMOS S-band radar power transistor 001aaj270 180 001aaj271 180 PL (W) PL (W) (2) (3) (1) 120 (2) (3) (1) 120 60 60 0 0 0 6 12 18 0 6 12 Pi (W) VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %. VDS = 32 V; IDq = 100 mA; tp = 100 μs; δ = 20 %. (1) f = 2.9 GHz (1) f = 2.9 GHz (2) f = 3.1 GHz (2) f = 3.1 GHz (3) f = 3.3 GHz (3) f = 3.3 GHz Fig 6. Load power as a function of input power; typical values 001aaj272 14 Gp (dB) Gp Fig 7. 60 ηD (%) Load power as a function of input power; typical values 001aaj273 14 Gp (dB) 50 12 Gp 60 ηD (%) 50 12 ηD ηD 10 40 10 40 8 30 8 30 6 20 6 20 4 2850 2950 3050 3150 10 3250 3350 f (MHz) 4 2850 PL = 130 W; VDS = 32 V; IDq = 100 mA; tp = 300 μs; δ = 10 %. Fig 8. 18 Pi (W) Power gain and drain efficiency as function of frequency; typical values BLS6G2933S-130_3 Product data sheet 2950 3050 3150 10 3250 3350 f (MHz) PL = 130 W; VDS = 32 V; IDq = 100 mA; tp = 100 μs; δ = 20 %. Fig 9. Power gain and drain efficiency as function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 6 of 12 BLS6G2933S-130 NXP Semiconductors LDMOS S-band radar power transistor 8. Test information C3 R1 C5 C6 C7 C8 C4 C1 C2 001aaj275 Striplines are on a double copper-clad Duroid 6006 Printed-Circuit Board (PCB) with εr = 6.15 and thickness = 0.64 mm. See Table 9 for list of components. Fig 10. Component layout for 2700 MHz to 3100 MHz test circuit Table 9. List of components See Figure 10. Component Description Value Quantity Remarks C1, C2, C5, C7 multilayer ceramic chip capacitor 33 pF 1 ATC 100A or equivalent C3 multilayer ceramic chip capacitor 1 μF 1 ATC 900A or equivalent C4 multilayer ceramic chip capacitor 47 μF; 63 V 1 C6 multilayer ceramic chip capacitor 1 nF 2 C8 electrolytic capacitor 68 μF; 63 V 1 R1 SMD resistor 47 Ω 1 BLS6G2933S-130_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 ATC 700A or equivalent SMD 0603 © NXP B.V. 2010. All rights reserved. 7 of 12 BLS6G2933S-130 NXP Semiconductors LDMOS S-band radar power transistor 9. Package outline Ceramic earless flanged cavity package; 2 leads SOT922-1 D F A 3 D1 D U1 c 1 L H U2 E1 E 2 b w2 0 5 D M Q M 10 mm scale DIMENSIONS (mm are the original dimensions) E E1 F H L Q U1 U2 w2 9.53 9.27 9.27 9.02 1.32 0.81 15.62 14.34 3.05 2.03 1.70 1.45 17.75 17.50 9.53 9.27 0.25 0.692 0.689 0.375 0.365 0.052 0.615 0.678 0.679 0.365 0.355 0.032 0.525 0.12 0.08 0.067 0.699 0.375 0.010 0.057 0.689 0.365 UNIT A b c mm 4.22 3.53 12.42 12.17 0.15 0.10 17.58 17.50 17.22 17.25 0.166 0.489 0.139 0.479 0.006 0.004 inches OUTLINE VERSION D D1 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-11-14 05-11-22 SOT922-1 Fig 11. Package outline SOT922-1 BLS6G2933S-130_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 8 of 12 BLS6G2933S-130 NXP Semiconductors LDMOS S-band radar power transistor 10. Abbreviations Table 10. Abbreviations Acronym Description LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor RF Radio Frequency S-band Short wave Band SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLS6G2933S-130_3 20100303 Product data sheet - BLS6G2933S-130_2 Modifications: The status of the data sheet was changed to “Product data sheet”. BLS6G2933S-130_2 20090618 Preliminary data sheet - BLS6G2933S-130_1 BLS6G2933S-130_1 20081211 Objective data sheet - - BLS6G2933S-130_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 9 of 12 BLS6G2933S-130 NXP Semiconductors LDMOS S-band radar power transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or BLS6G2933S-130_3 Product data sheet malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 10 of 12 BLS6G2933S-130 NXP Semiconductors LDMOS S-band radar power transistor In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLS6G2933S-130_3 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 03 — 3 March 2010 © NXP B.V. 2010. All rights reserved. 11 of 12 BLS6G2933S-130 NXP Semiconductors LDMOS S-band radar power transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 March 2010 Document identifier: BLS6G2933S-130_3