Data Sheet

PBHV9115X
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
Rev. 01 — 10 March 2010
Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„
„
„
„
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
1.3 Applications
„
„
„
„
„
LED driver for LED chain module
LCD backlighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
open base
-
-
−150
V
-
-
−1
A
100
220
-
VCEO
collector-emitter voltage
IC
collector current
hFE
DC current gain
VCE = −10 V;
IC = −50 mA
2. Pinning information
Table 2.
Pinning
Pin
Description
1
emitter
2
collector
3
base
Simplified outline
Graphic symbol
2
3
3
2
1
1
sym079
PBHV9115X
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
3. Ordering information
Table 3.
Ordering information
Type number
PBHV9115X
Package
Name
Description
Version
SC-62
plastic surface-mounted package; collector pad for good
heat transfer; 3 leads
SOT89
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PBHV9115X
*4G
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
PBHV9115X_1
Product data sheet
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
−200
V
VCEO
collector-emitter voltage
open base
-
−150
V
VCESM
collector-emitter peak
voltage
VBE = 0 V
-
−200
V
VEBO
emitter-base voltage
open collector
-
−6
V
IC
collector current
-
−1
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
-
−2
A
IBM
peak base current
single pulse;
tp ≤ 1 ms
-
−400
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
520
mW
[2]
1.5
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
2 of 13
PBHV9115X
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
006aab846
2.0
Ptot
(W)
1.6
(1)
1.2
0.8
(2)
0.4
0.0
−75
−25
25
75
125
175
Tamb (°C)
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
PBHV9115X_1
Product data sheet
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
thermal resistance from
junction to solder point
Min
Typ
Max
[1]
Unit
-
-
240
K/W
[2]
-
-
80
K/W
-
-
20
K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
3 of 13
PBHV9115X
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
006aab847
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
102
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab848
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.2
10
0.1
0.05
1
0
10−1
10−5
0.02
0.01
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV9115X_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
4 of 13
PBHV9115X
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base
cut-off current
VCB = −120 V;
IE = 0 A
-
-
−100
nA
VCB = −120 V;
IE = 0 A; Tj = 150 °C
-
-
−10
μA
ICES
collector-emitter
cut-off current
VCE = −120 V;
VBE = 0 V
-
-
−100
nA
IEBO
emitter-base
cut-off current
VEB = −4 V; IC = 0 A
-
-
−100
nA
hFE
DC current gain
VCE = −10 V
IC = −50 mA
VCEsat
Product data sheet
220
-
[1]
100
220
-
IC = −1 A
[1]
10
30
-
IC = −100 mA;
IB = −10 mA
[1]
-
−60
−120
mV
IC = −100 mA;
IB = −20 mA
[1]
-
−50
−100
mV
IC = −500 mA;
IB = −50 mA
[1]
-
−200
−300
mV
[1]
-
−1
−1.2
V
-
8
-
ns
-
282
-
ns
-
290
-
ns
VBEsat
base-emitter
saturation voltage
IC = −1 A;
IB = −100 mA
td
delay time
VCC = −6 V;
IC = −0.5 A;
IBon = −0.1 A;
IBoff = 0.1 A
tr
rise time
ton
turn-on time
ts
storage time
-
430
-
ns
tf
fall time
-
300
-
ns
toff
turn-off time
-
730
-
ns
fT
transition frequency
VCE = −10 V;
IC = −10 mA;
f = 100 MHz
-
115
-
MHz
Cc
collector capacitance
VCB = −20 V;
IE = ie = 0 A;
f = 1 MHz
-
10
-
pF
Ce
emitter capacitance
VEB = −0.5 V;
IC = ic = 0 A;
f = 1 MHz
-
150
-
pF
[1]
PBHV9115X_1
collector-emitter
saturation voltage
100
IC = −100 mA
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
5 of 13
PBHV9115X
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
006aab166
400
hFE
006aab849
−2.0
IB (mA) = −300
IC
(A)
(1)
−1.5
300
−200
−150
(2)
−100
−1.0
200
−50
(3)
−20
−0.5
100
−10
−2
0
−10−1
−1
−10
−102
0.0
−103
−104
IC (mA)
0
VCE = −10 V
−1
−2
−3
−5
−1
−4
−5
VCE (V)
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4.
DC current gain as a function of collector
current; typical values
006aab168
−1.2
VBE
(V)
Fig 5.
Collector current as a function of
collector-emitter voltage; typical values
006aab850
−1.3
VBEsat
(V)
(1)
−0.8
−0.9
(2)
(1)
(3)
(2)
−0.4
−0.5
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
(3)
−0.1
−10−1
VCE = −10 V
−1
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
PBHV9115X_1
Product data sheet
−102
−103
IC (mA)
IC/IB = 10
(1) Tamb = −55 °C
Fig 6.
−10
Fig 7.
Base-emitter saturation voltage as a function
of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
6 of 13
PBHV9115X
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
006aab851
−1
006aab852
−1
VCEsat
(V)
VCEsat
(V)
−10−1
−10−1
(1)
(2)
(1)
(2)
(3)
(3)
−10−2
−10−1
−1
−10
−102
−103
IC (mA)
−10−2
−10−1
−1
−102
−103
IC (mA)
Tamb = 25 °C
IC/IB = 10
(1) Tamb = 100 °C
(1) IC/IB = 50
(2) Tamb = 25 °C
(2) IC/IB = 20
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 8.
−10
Collector-emitter saturation voltage as a
function of collector current; typical values
006aab853
103
Fig 9.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aab854
103
RCEsat
(Ω)
RCEsat
(Ω)
102
102
10
10
(1)
(2)
(1)
(2)
1
1
(3)
(3)
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
10−1
−10−1
−1
(1) IC/IB = 50
(2) Tamb = 25 °C
(2) IC/IB = 20
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
Product data sheet
−102
−103
−104
IC (mA)
Tamb = 25 °C
IC/IB = 10
(1) Tamb = 100 °C
PBHV9115X_1
−10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
7 of 13
PBHV9115X
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
8. Test information
VBB
VCC
RB
oscilloscope
RC
Vo
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mgd624
Fig 12. Test circuit for switching times
9. Package outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1
2
1.2
0.8
3
0.53
0.40
1.5
0.48
0.35
0.44
0.23
3
Dimensions in mm
06-08-29
Fig 13. Package outline SOT89 (SC-62/TO-243)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PBHV9115X
[1]
PBHV9115X_1
Product data sheet
Package Description
SOT89
Packing quantity
1000
4000
8 mm pitch, 12 mm tape and reel; T1
[2]
-115
-135
8 mm pitch, 12 mm tape and reel; T3
[3]
-120
-
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T3: 90° taping
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
8 of 13
PBHV9115X
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
11. Soldering
4.75
2.25
2
1.9
1.2
0.2
0.85
solder lands
1.7
1.2
4.6
solder resist
0.5
4.85
solder paste
occupied area
1
(3×)
1.1
(2×)
1.5
Dimensions in mm
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig 14. Reflow soldering footprint SOT89 (SC-62/TO-243)
6.6
2.4
3.5
solder lands
7.6
0.5
solder resist
occupied area
1.8
(2×)
Dimensions in mm
preferred transport direction during soldering
1.9
1.5
(2×)
1.9
0.7
5.3
sot089_fw
Fig 15. Wave soldering footprint SOT89 (SC-62/TO-243)
PBHV9115X_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
9 of 13
PBHV9115X
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBHV9115X_1
20100310
Product data sheet
-
-
PBHV9115X_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
10 of 13
PBHV9115X
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
PBHV9115X_1
Product data sheet
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 10 March 2010
© NXP B.V. 2010. All rights reserved.
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PBHV9115X
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBHV9115X_1
Product data sheet
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© NXP B.V. 2010. All rights reserved.
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PBHV9115X
NXP Semiconductors
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 10 March 2010
Document identifier: PBHV9115X_1