APTM120U10SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module D DK VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control SK S G, SK and DK terminals are for control signals only (not for power) • SiC Parallel Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • • Kelvin source for easy drive Kelvin drain for voltage monitoring Very low stray inductance - Symmetrical design - M5 power connectors - M3 power connectors High level of integration AlN substrate for improved MOSFET thermal performance DK S SK G D • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTM120U10SCAVG – Rev 1 G September, 2009 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged APTM120U10SCAVG Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Max ratings 1200 116 86 464 ±30 120 3290 24 50 3200 Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Unit V A V mΩ W A mJ Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS = 1200V Tj = 25°C VGS = 0V,VDS = 1000V Tj = 125°C VGS = 10V, ID = 58A VGS = VDS, ID = 20mA VGS = ±30 V, VDS = 0V Typ 100 3 Max 1 3 120 5 ±400 Unit Max Unit mA mΩ V nA Dynamic Characteristics Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 116A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 116A RG =1.2Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 116A, RG = 1.2Ω www.microsemi.com Min Typ 28.9 4.4 0.8 nF 1100 128 nC 716 20 17 245 ns 62 3 mJ 4.6 5.5 5.6 September, 2009 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance mJ 2–8 APTM120U10SCAVG – Rev 1 Symbol Ciss Coss Crss APTM120U10SCAVG Series diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current Test Conditions trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ Tj = 25°C Tj = 125°C VR=200V DC Forward Current Diode Forward Voltage Min 200 350 600 Tj = 125°C 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 Tc = 80°C IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs Max Unit V µA A 1.15 V ns nC SiC Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance Test Conditions Min 1200 Typ Max Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C IF = 90A Tj = 175°C IF = 90A, VR = 300V di/dt =1800A/µs 288 504 90 1.6 2.3 1800 9000 f = 1MHz, VR = 200V 864 f = 1MHz, VR = 400V 621 VR=1200V Unit V µA A 1.8 3 360 V nC pF Thermal and package characteristics RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink Torque Mounting torque Wt Package Weight For terminals www.microsemi.com M6 M5 M3 4000 -40 -40 -40 3 2 1 Typ Max 0.038 0.46 0.22 Unit °C/W V 150 125 100 5 3.5 1.5 280 °C September, 2009 Min Transistor Series diode SiC Parallel diode N.m g 3–8 APTM120U10SCAVG – Rev 1 Symbol Characteristic APTM120U10SCAVG SP6 Package outline (dimensions in mm) www.microsemi.com 4–8 APTM120U10SCAVG – Rev 1 September, 2009 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM120U10SCAVG Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.04 0.035 0.9 0.03 0.7 0.025 0.02 0.5 0.015 0.3 0.01 Single Pulse 0.1 0.05 0.005 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 320 VGS=15, 10V 200 6V 160 5.5V 120 80 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 280 7V 5V 40 240 200 160 120 80 TJ=25°C 40 4.5V 0 0 5 10 15 20 25 TJ=125°C 0 30 0 ID, DC Drain Current (A) VGS=10V 1.1 VGS=20V 1 4 5 6 7 0.9 0.8 100 80 60 40 20 0 0 40 80 120 160 200 240 ID, Drain Current (A) 25 50 75 100 125 September, 2009 RDS(on) Drain to Source ON Resistance 1.2 3 120 Normalized to VGS=10V @ 58A 1.3 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 150 TC, Case Temperature (°C) www.microsemi.com 5–8 APTM120U10SCAVG – Rev 1 240 ID, Drain Current (A) ID, Drain Current (A) 280 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=58A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 ID, Drain Current (A) 1.0 0.9 0.8 0.7 100µs limited by RDSon 100 1ms 10ms 10 Single pulse TJ=150°C TC=25°C 1 0.6 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 100 0 10 20 30 40 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 1200 10 100 1000 VDS, Drain to Source Voltage (V) 14 ID=116A TJ=25°C 12 10 VDS=240V VDS=600V 8 VDS=960V 6 4 2 0 50 VDS, Drain to Source Voltage (V) 0 300 600 900 1200 1500 September, 2009 VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Gate Charge (nC) www.microsemi.com 6–8 APTM120U10SCAVG – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120U10SCAVG APTM120U10SCAVG Delay Times vs Current Rise and Fall times vs Current 100 td(off) 250 200 VDS=800V RG=1.2Ω TJ=125°C L=100µH 150 100 50 VDS=800V RG=1.2Ω TJ=125°C L=100µH 80 tr and tf (ns) 60 tr 40 20 td(on) 0 0 30 60 90 120 150 180 30 ID, Drain Current (A) 90 120 150 ID, Drain Current (A) 180 24 VDS=800V RG=1.2Ω TJ=125°C L=100µH 9 Switching Energy (mJ) 12 Eon 6 3 Eoff 0 VDS=800V ID=116A TJ=125°C L=100µH 20 16 Eoff 12 Eon 8 4 30 60 90 120 150 180 0 ID, Drain Current (A) 2 4 6 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 175 ZCS 150 ZVS 125 100 VDS=800V D=50% RG=1.2Ω TJ=125°C TC=75°C 75 50 25 Hard switching 0 50 70 90 ID, Drain Current (A) 110 TJ=150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 September, 2009 Switching Energy (mJ) 60 Switching Energy vs Gate Resistance Switching Energy vs Current Frequency (kHz) tf VSD, Source to Drain Voltage (V) www.microsemi.com 7–8 APTM120U10SCAVG – Rev 1 td(on) and td(off) (ns) 300 APTM120U10SCAVG SiC Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.24 0.9 0.2 0.7 0.16 0.5 0.12 0.3 0.08 0.1 0.04 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics 900 TJ=25°C 160 IR Reverse Current (µA) IF Forward Current (A) Forward Characteristics TJ=75°C 120 80 TJ=125°C TJ=175°C 40 750 600 450 300 0.5 1 1.5 2 2.5 3 TJ=125°C 150 0 0 TJ=75°C 3.5 0 400 TJ=175°C 600 800 TJ=25°C 1000 1200 1400 1600 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage 5400 4500 3600 2700 1800 September, 2009 900 0 1 10 100 VR Reverse Voltage 1000 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 8–8 APTM120U10SCAVG – Rev 1 C, Capacitance (pF) 6300