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APTM100H45SCTG
VDSS = 1000V
RDSon = 450mΩ typ @ Tj = 25°C
ID = 18A @ Tc = 25°C
Full bridge Series & SiC parallel diodes
MOSFET Power Module
VBUS
CR3A
CR1A
CR1B
Q1
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
CR3B
Q3
G3
G1
OUT1 OUT2
S1
Q2
S3
CR4A
CR2A
CR2B
CR4B
Q4
G2
G4
S2
S4
NTC1
0/VBUS
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
•
Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
•
•
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
NTC2
•
•
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
18
14
72
±30
540
357
18
50
2500
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–9
APTM100H45SCTG – Rev 4 October, 2013
Symbol
VDSS
APTM100H45SCTG
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Test Conditions
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Min
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 9A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Typ
450
3
Max
100
500
540
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Min
Typ
4350
715
120
pF
154
VGS = 10V
VBus = 500V
ID = 18A
26
nC
97
10
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 18A
RG = 5Ω
12
ns
121
35
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
383
µJ
380
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, RG = 5Ω
627
µJ
451
0.35
°C/W
Max
Unit
V
µA
A
Series diode ratings and characteristics
VF
Characteristic
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
Test Conditions
Min
1000
Maximum Peak Repetitive Reverse Voltage
Typ
VR=1000V
250
Tc = 85°C
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 667V
di/dt = 200A/µs
Tj = 125°C
30
1.9
2.2
1.7
Tj = 25°C
290
Tj = 125°C
390
Tj = 25°C
670
Tj = 125°C
2350
Junction to Case Thermal Resistance
2.3
V
ns
nC
1.2
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°C/W
2–9
APTM100H45SCTG – Rev 4 October, 2013
Symbol
VRRM
IRM
IF
APTM100H45SCTG
Parallel SiC diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRRM
Maximum Reverse Leakage Current
Test Conditions
VR=1200V
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
100
200
10
1.6
2.6
400
2000
IF
DC Forward Current
VF
Diode Forward Voltage
IF = 10A
QC
Total Capacitive Charge
IF = 10A, VR = 1200V
di/dt =800A/µs
56
Q
Total Capacitance
f = 1MHz, VR = 200V
90
f = 1MHz, VR = 400V
66
RthJC
Unit
V
µA
A
1.8
3.0
V
nC
pF
Junction to Case Thermal Resistance
1.5
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
M5
Package Weight
Min
4000
-40
-40
-40
-40
2.5
Max
Unit
V
150
TJmax -25
125
100
4.7
160
N.m
g
Typ
50
5
3952
4
Unit
kΩ
%
K
%
°C
Temperature sensor NTC (see application note APT0406 on www.microsemi.com).
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R 25
Max
T: Thermistor temperature
⎡
⎛ 1 1 ⎞⎤ RT: Thermistor value at T
exp⎢ B 25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦⎥
⎣⎢
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3–9
APTM100H45SCTG – Rev 4 October, 2013
Symbol
R25
∆R25/R25
B25/85
∆B/B
APTM100H45SCTG
SP4 Package outline (dimensions in mm)
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4–9
APTM100H45SCTG – Rev 4 October, 2013
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
APTM100H45SCTG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.4
0.35
0.9
0.3
0.7
0.25
0.2
0.5
0.15
0.3
0.1
Single Pulse
0.1
0.05
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
80
VDS > ID (on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
70
50
VGS=15&8V
7V
40
ID, Drain Current (A)
6.5V
30
6V
20
5.5V
10
60
50
TJ=25°C
40
30
20
TJ=125°C
10
5V
0
0
5
10
15
20
25
0
30
0
Normalized to
VGS=10V @ 9A
VGS=10V
1.2
1.1
VGS=20V
1
0.9
0.8
0
10
20
30
40
3
4
5
6
7
8
9
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1.3
2
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS , Drain to Source Voltage (V)
1
50
20
18
16
14
12
10
8
6
4
2
0
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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5–9
APTM100H45SCTG – Rev 4 October, 2013
ID, Drain Current (A)
60
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
25
50
75
100
125
150
RDS (on), Drain to Source ON resistance
(Normalized)
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTM100H45SCTG
ON resistance vs Temperature
2.5
VGS=10V
I D=9A
2.0
1.5
1.0
0.5
25
50
75
100
125
150
TJ, Junction Temperature (°C)
T J, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
100
1.1
1.0
ID, Drain Current (A)
0.9
0.8
0.7
0.6
1ms
10
10ms
1
Single pulse
TJ =150°C
TC=25°C
0
25
50
75
100
125
1
150
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
10
0
10
20
30
40
VGS , Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
100
10
100
1000
VDS , Drain to Source Voltage (V)
TC, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
14
VDS=200V
ID=18A
12
TJ =25°C
VDS=500V
10
8
VDS=800V
6
4
2
0
50
VDS, Drain to Source Voltage (V)
0
40
80
120
160
200
Gate Charge (nC)
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6–9
APTM100H45SCTG – Rev 4 October, 2013
VGS (TH), Threshold Voltage
(Normalized)
100µs
limited by
R DSon
APTM100H45SCTG
Delay Times vs Current
Rise and Fall times vs Current
60
160
td(off)
VDS=667V
R G =5Ω
TJ=1 25 °C
L=100µH
50
120
100
tr and t f (ns)
t d(on) and t d(off) (ns)
140
VDS=667V
R G =5Ω
TJ=1 25 °C
L=100µH
80
60
40
td(on)
20
10
15
20
25
tf
30
tr
20
10
0
5
40
30
35
0
40
5
10
20
25
30
35
40
Switching Energy vs Gate Resistance
Switching Energy vs Current
2.5
VDS=667
V
R G =5Ω
TJ=1 25 °C
L=100µH
1
Switching Energy (mJ)
1.5
Switching Energy (mJ)
15
ID, Drain Current (A)
ID, Drain Current (A)
Eon
Eoff
0.5
0
VDS=667V
I D=18A
TJ=1 25 °C
L=100µH
2
1.5
1
Eon
0.5
Eoff
0
5
10
15
20
25
30
35
40
ID, Drain Current (A)
0
5
10
15
20
25
30
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
300
ZVS
200
ZCS
VDS=667V
D=50%
R G =5Ω
TJ=1 25 °C
TC =75 °C
150
100
Hard
switching
50
0
6
8
10
12
14
16
18
ID, Drain Current (A)
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7–9
APTM100H45SCTG – Rev 4 October, 2013
Frequency (kHz)
250
APTM100H45SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.6
0.9
1.4
1.2
0.7
1
0.5
0.8
0.6
0.3
0.4
0.1
0.2
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
20
400
15
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
TJ=75°C
10
TJ=125°C
5
TJ=175°C
300
200
0.5
1
1.5
2
2.5
3
TJ=125°C
100
0
0
TJ=75°C
3.5
VF Forward Voltage (V)
TJ=175°C
0
400
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
800
600
500
400
300
200
100
0
1
10
100
VR Reverse Voltage
1000
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8–9
APTM100H45SCTG – Rev 4 October, 2013
C, Capacitance (pF)
700
APTM100H45SCTG
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authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
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inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTM100H45SCTG – Rev 4 October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.