APTC60HM45SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 45mΩ max @ Tj = 25°C ID = 49A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS CR3A CR3B Features • Q3 G3 G1 OUT1 OUT2 S1 CR2A Q2 CR4A CR2B CR4B G4 S2 S4 0/VBUS • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration NTC2 G3 G4 S3 S4 Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Q4 G2 NTC1 - S3 • • OUT2 Benefits • Outstanding performance at high frequency operation OUT1 VBUS 0/VBUS • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for S1 NTC2 S2 G1 NTC1 G2 easy PCB mounting • Low profile • RoHS compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 49 ID Continuous Drain Current A Tc = 80°C 38 IDM Pulsed Drain current 130 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 45 mΩ PD Maximum Power Dissipation Tc = 25°C 250 W IAR Avalanche current (repetitive and non repetitive) 15 A EAR Repetitive Avalanche Energy 3 mJ EAS Single Pulse Avalanche Energy 1900 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 September, 2009 CR1B Q1 APTC60HM45SCTG – Rev 2 CR1A APTC60HM45SCTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 22.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 2.1 40 3 Max 25 250 45 3.9 100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Typ 7.2 8.5 VGS = 10V VBus = 300V ID = 44A 150 Inductive switching @ 125°C VGS = 10V VBus = 400V ID = 50A RG = 5Ω 21 nF nC 34 51 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 50A ; RG = 5Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 50A ; RG = 5Ω 405 µJ 520 658 µJ 635 Series diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VR=200V IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/µs www.microsemi.com Tj = 25°C Tj = 125°C Tc = 85°C Typ Max 250 500 Tj = 125°C 30 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 33 Tj = 125°C 150 Unit V µA A 1.15 V September, 2009 IRM Min 200 ns nC 2–8 APTC60HM45SCTG – Rev 2 Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage APTC60HM45SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance Test Conditions Min 600 Typ Max 100 200 20 1.6 2.0 400 2000 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C IF = 20A Tj = 175°C IF = 20A, VR = 300V di/dt =800A/µs f = 1MHz, VR = 200V 130 f = 1MHz, VR = 400V 100 VR=600V Unit V µA A 1.8 2.4 28 V nC pF Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Series diode To Heatsink M5 4000 -40 -40 -40 1.5 Max 0.5 1.2 1.5 Unit °C/W V 150 125 100 4.7 160 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C Max Unit kΩ % K % R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ September, 2009 RT = Typ 50 5 3952 4 www.microsemi.com 3–8 APTC60HM45SCTG – Rev 2 Symbol R25 ∆R25/R25 B25/85 ∆B/B APTC60HM45SCTG SP4 Package outline (dimensions in mm) ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : www.microsemi.com 4–8 APTC60HM45SCTG – Rev 2 September, 2009 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTC60HM45SCTG Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 100 80 60 40 TJ=125°C 20 0 TJ=25°C TJ=-55°C 0 5 10 15 20 25 0 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.3 Normalized to VGS=10V @ 50A 1.2 VGS=10V ID, DC Drain Current (A) 1.25 1.15 1.1 VGS=20V 1.05 1 0.95 0.9 0 20 40 60 80 100 120 140 ID, Drain Current (A) www.microsemi.com 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 50 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature (°C) September, 2009 0 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 5–8 APTC60HM45SCTG – Rev 2 ID, Drain Current (A) 320 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.1 ID, Drain Current (A) 1.0 0.9 0.8 0.7 limited by RDSon 100 100 µs 0.6 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Coss Ciss 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 12 ID=50A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 0 20 40 60 80 100 120 140 160 Gate Charge (nC) September, 2009 VGS(TH), Threshold Voltage (Normalized) 1.2 C, Capacitance (pF) VGS=10V ID= 50A 6–8 APTC60HM45SCTG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60HM45SCTG APTC60HM45SCTG Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=5Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) 20 50 40 30 tr 20 10 0 0 10 20 30 40 50 0 60 70 80 0 10 20 ID, Drain Current (A) 1.2 Eoff Eon 0.8 40 50 60 70 80 Switching Energy vs Gate Resistance 2 Switching Energy (mJ) 0.4 VDS=400V ID=50A TJ=125°C L=100µH 1.5 Eoff 1 Eon 0.5 0 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C ZVS 200 150 ZCS 100 hard switching 50 30 40 50 Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 0 5 20 Gate Resistance (Ohms) 300 250 10 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) www.microsemi.com 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 September, 2009 Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH 30 ID, Drain Current (A) Switching Energy vs Current 1.6 Frequency (kHz) tf VSD, Source to Drain Voltage (V) 7–8 APTC60HM45SCTG – Rev 2 td(on) and td(off) (ns) 120 APTC60HM45SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 0.9 1.4 1.2 0.7 1 0.5 0.8 0.6 0.3 0.4 0.1 0.2 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 400 TJ=25°C 35 30 TJ=75°C 25 IR Reverse Current (µA) IF Forward Current (A) Reverse Characteristics Forward Characteristics 40 TJ=175°C 20 TJ=125°C 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 TJ=175°C 350 300 TJ=125°C 250 200 TJ=75°C 150 100 TJ=25°C 50 0 200 VF Forward Voltage (V) 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage 800 C, Capacitance (pF) 700 600 500 400 300 200 100 0 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 8–8 September, 2009 10 100 VR Reverse Voltage APTC60HM45SCTG – Rev 2 1