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APTC80H29SCTG
VDSS = 800V
RDSon = 290mΩ max @ Tj = 25°C
ID = 15A @ Tc = 25°C
Full – Bridge Series & SiC parallel diodes
Super Junction MOSFET Power Module
VBUS
CR1A
CR1B
Q1
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
CR3A
CR3B
Q3
G3
G1
OUT1 OUT2
S1
CR2A
Q2
S3
CR4A
CR2B
CR4B
Q4
G2
G4
S2
S4
NTC1
0/VBUS
Features
• CoolMOS™
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
•
Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
•
•
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
NTC2
•
•
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
800
15
11
60
±30
290
156
17
0.5
670
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–9
APTC80H29SCTG – Rev 4 October, 2013
Symbol
VDSS
APTC80H29SCTG
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 800V
VGS = 0V,VDS = 800V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 7.5A
VGS = VDS, ID = 1mA
VGS = ±20 V, VDS = 0V
2.1
3
Min
Typ
2254
1046
54
Max
25
250
290
3.9
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
pF
91
VGS = 10V
VBus = 400V
ID = 15A
12
nC
46
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 15A
RG = 5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 15A, RG = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 15A, RG = 5Ω
10
13
83
ns
35
146
µJ
139
255
µJ
171
0.8
°C/W
Max
Unit
V
µA
A
Series diode ratings and characteristics
VF
Characteristic
Test Conditions
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ
VR=1000V
250
Tc = 85°C
IF = 30A
IF = 60A
IF = 30A
RthJC
Min
1000
Maximum Peak Repetitive Reverse Voltage
IF = 30A
VR = 667V
30
1.9
2.2
Tj = 125°C
1.7
Tj = 25°C
290
Tj = 125°C
390
Tj = 25°C
670
Tj = 125°C
2350
di/dt = 200A/µs
Junction to Case Thermal Resistance
2.3
V
ns
nC
1.2
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°C/W
2–9
APTC80H29SCTG – Rev 4 October, 2013
Symbol
VRRM
IRM
IF
APTC80H29SCTG
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VR=1200V
Min
1200
Tj = 25°C
Tj = 150°C
Tc = 125°C
Tj = 25°C
Tj = 150°C
Typ
200
1000
IF
DC Forward Current
VF
Diode Forward Voltage
IF = 10A
QC
Total Capacitive Charge
IF = 10A, VR = 800V
di/dt =100A/µs
30
Q
Total Capacitance
f = 1MHz, VR = 200V
71
f = 1MHz, VR = 400V
52
RthJC
Max
10
1.5
2.1
Unit
V
µA
A
1.8
V
nC
pF
Junction to Case Thermal Resistance
2.7
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
M5
Package Weight
Min
4000
-40
-40
-40
-40
2.5
Max
150
TJmax -25
125
100
4.7
160
Unit
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R 25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1 1 ⎞⎤ RT: Thermistor value at T
− ⎟⎟⎥
exp⎢ B 25 / 85 ⎜⎜
⎝ T25 T ⎠⎦⎥
⎣⎢
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3–9
APTC80H29SCTG – Rev 4 October, 2013
Symbol
R25
∆R25/R25
B25/85
∆B/B
APTC80H29SCTG
SP4 Package outline (dimensions in mm)
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4–9
APTC80H29SCTG – Rev 4 October, 2013
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
APTC80H29SCTG
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.9
0.8
0.9
0.7
0.7
0.6
0.5
0.5
0.4
0.3
0.3
0.2
0.1
0.1
0
0.00001
Single Pulse
0.05
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
50
40
VGS=15&10V
6.5V
30
25
ID, Drain Current (A)
6V
20
5.5V
15
5V
10
4.5V
5
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
40
30
20
TJ=125°C
10
TJ=25°C
4V
0
0
0
5
10
15
20
0
25
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 7.5A
VGS=10V
1.2
VGS=20V
1.1
3
4
5
6
7
8
DC Drain Current vs Case Temperature
16
1.4
1.3
2
VGS , Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS (on) Drain to Source ON Resistance
VDS , Drain to Source Voltage (V)
1
1
0.9
14
12
10
8
6
4
2
0
0.8
0
5
10
15
20
25
30
25
50
75
100
125
150
TC, Case Temperature (°C)
ID, Drain Current (A)
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5–9
APTC80H29SCTG – Rev 4 October, 2013
ID, Drain Current (A)
35
Breakdown Voltage vs Temperature
1.15
1.10
1.05
1.00
0.95
0.90
25
50
75
100
125
150
ON resistance vs Temperature
RDS (on), Drain to Source ON resistance
(Normalized)
3.0
2.0
1.5
1.0
0.5
0.0
25
75
100
125
150
Maximum Safe Operating Area
Threshold Voltage vs Temperature
100
ID, Drain Current (A)
VGS (TH), Threshold Voltage
(Normalized)
50
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
1.1
1.0
0.9
0.8
0.7
25
50
75
100
125
limited by
R DSon
1ms
1
Single pulse
TJ =150°C
TC=25°C
1
1000
Coss
100
Crss
10
0
10
20
30
40
VGS , Gate to Source Voltage (V)
Ciss
100ms
0
150
Capacitance vs Drain to Source Voltage
10000
100µs
10
TC, Case Temperature (°C)
C, Capacitance (pF)
VGS=10V
I D= 7.5A
2.5
10
100
1000
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
I D=15A
TJ=2 5 °C
12
VDS=160V
VDS=400V
10
8
VDS=640V
6
4
2
0
50
0
20
40
60
80
100
Gate Charge (nC)
VDS , Drain to Source Voltage (V)
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6–9
APTC80H29SCTG – Rev 4 October, 2013
BVDSS , Drain to Source Breakdown Voltage
(Normalized)
APTC80H29SCTG
APTC80H29SCTG
Delay Times vs Current
Rise and Fall times vs Current
50
100
tf
40
80
VDS=533V
R G =5Ω
TJ=1 25 °C
L=100µH
60
t r and t f (ns)
td(on) and td(off) (ns)
td(off)
40
20
30
VDS=533V
R G =5Ω
TJ=1 25 °C
L=100µH
20
10
td(on)
0
0
5
10
15
20
5
25
ID, Drain Current (A)
Switching Energy vs Current
15
20
25
Switching Energy vs Gate Resistance
1250
VDS=533V
R G =5Ω
TJ=1 25 °C
L=100µH
Eon
Switching Energy (µJ)
400
10
ID, Drain Current (A)
500
Eon and Eoff (µJ)
tr
300
Eoff
200
100
VDS=533V
I D=15A
TJ=1 25 °C
L=100µH
1000
Eoff
750
500
Eon
250
Eoff
0
0
5
10
15
20
ID, Drain Current (A)
25
0
10
20
30
40
50
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
400
300
ZVS
ZCS
250
200
VDS=533V
D=50%
R G =5Ω
TJ=1 25 °C
TC =75 °C
150
100
50
Hard
Switching
0
4
6
8
10
12
14
ID, Drain Current (A)
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7–9
APTC80H29SCTG – Rev 4 October, 2013
Frequency (kHz)
350
APTC80H29SCTG
Typical SiC Diode Performance Curve
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
2.8
D = 0.9
2.4
2
1.6
1.2
0.7
0.5
0.3
0.8
0.4
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
Forward Characteristics
Capacitance vs.Reverse Voltage
400
350
15
TJ=25°C
C, Capacitance (pF)
IF Forward Current (A)
20
10
TJ=150°C
5
300
250
200
150
100
50
0
0
0.5
1
1.5
2
2.5
3
3.5
4
VF Forward Voltage (V)
0
1
10
100
1000
VR Reverse Voltage
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8–9
APTC80H29SCTG – Rev 4 October, 2013
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APTC80H29SCTG
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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9–9
APTC80H29SCTG – Rev 4 October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.