APTM50HM75SCTG Full bridge Series & SiC parallel diodes MOSFET Power Module VBUS CR1A Q3 G3 CR2A Q2 S3 CR4A CR2B CR4B Q4 G2 G4 S2 S4 0/VBUS NTC1 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration NTC2 • • G3 G4 S3 S4 VBUS 0/VB US Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant OUT2 OUT1 S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 46 34 184 ±30 90 357 46 50 2500 Unit V A V mΩ W A July, 2006 OUT1 OUT2 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTM50HM75SCTG – Rev 2 CR3B G1 S1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies CR3A CR1B Q1 VDSS = 500V RDSon = 75mΩ typ @ Tj = 25°C ID = 46A @ Tc = 25°C APTM50HM75SCTG All ratings @ Tj = 25°C unless otherwise specified RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Min Test Conditions IF = 30A VR = 133V di/dt = 200A/µs Max Unit µA mΩ V nA pF nC 18 35 77 453 745 µJ 846 Typ Max 250 500 Tj = 125°C 30 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 33 Tj = 125°C 150 www.microsemi.com µJ 726 Min 600 Tj = 25°C Tj = 125°C Tc = 85°C ns 87 Inductive switching @ 125°C VGS = 15V, VBus = 333V ID = 46A, R G = 5Ω IF = 30A IF = 60A IF = 30A Unit 65 Inductive switching @ 25°C VGS = 15V, VBus = 333V ID = 46A, R G = 5Ω VR=600V Typ 5590 1180 85 123 Max 100 500 90 5 ±100 33 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 46A R G = 5Ω DC Forward Current Diode Forward Voltage 75 3 VGS = 10V VBus = 250V ID = 46A Series diode ratings and characteristics Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Dynamic Characteristics Symbol Ciss Coss Crss Qg Min Unit V µA A 1.15 V July, 2006 IDSS Characteristic ns nC 2–8 APTM50HM75SCTG – Rev 2 Electrical Characteristics Symbol APTM50HM75SCTG Parallel diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current Test Conditions VR=600V Min 600 Tj = 25°C Tj = 175°C Tc = 125°C Tj = 25°C Tj = 175°C Typ Max 100 200 20 1.6 2.0 400 2000 IF DC Forward Current VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 300V di/dt =800A/µs 28 Q Total Capacitance f = 1MHz, VR = 200V 130 f = 1MHz, VR = 400V 100 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Series diode To Heatsink M5 2500 -40 -40 -40 2.5 RT = Min R 25 µA A 1.8 2.4 V nC pF Max 0.35 1.2 1.5 Unit °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Unit V Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T www.microsemi.com 3–8 APTM50HM75SCTG – Rev 2 July, 2006 SP4 Package outline (dimensions in mm) APTM50HM75SCTG ALL DIMENSIO NS MARKED " * " ARE TOLERENCED AS : www.microsemi.com 4–8 APTM50HM75SCTG – Rev 2 July, 2006 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM50HM75SCTG Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 160 Transfert Characteristics 8V VGS=10&15V 140 I D, Drain Current (A) 7.5V 120 100 7V 80 6.5V 60 40 6V 20 5.5V VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 T J=25°C 20 TJ=125°C T J=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current Normalized to VGS=10V @ 23A 1.15 3 4 5 6 7 8 DC Drain Current vs Case Temperature VGS=10V 1.10 1.05 2 50 I D, DC Drain Current (A) 1.20 1 VGS, Gate to Source Voltage (V) V GS=20V 1.00 0.95 0.90 0.85 40 30 20 10 0.80 0 0 20 40 60 80 100 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 I D, Drain Current (A) 10 120 180 RDS(on) Drain to Source ON Resistance 1 5–8 APTM50HM75SCTG – Rev 2 Thermal Impedance (°C/W) 0.4 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=23A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 100 10 0.6 Single pulse TJ =150°C TC=25°C 1ms 10ms 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS =100V I D=46A 12 T =25°C J V =250V DS 10 50 VDS=400V 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) July, 2006 C, Capacitance (pF) 100µs limited by R limited byDSon RDSon www.microsemi.com 6–8 APTM50HM75SCTG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50HM75SCTG APTM50HM75SCTG Delay Times vs Current Rise and Fall times vs Current 120 td(off) 80 VDS=333V RG=5Ω TJ=125°C L=100µH 60 40 td(on) 20 80 40 tr 20 0 10 20 30 40 50 60 I D, Drain Current (A) 10 70 VDS=333V RG=5Ω TJ=125°C L=100µH 1.6 1.2 40 50 60 70 Switching Energy vs Gate Resistance Eoff Eon 0.8 30 4 Switching Energy (mJ) 2 20 I D, Drain Current (A) Switching Energy vs Current 0.4 Eoff VDS=333V ID=46A T J=125°C L=100µH 3.5 3 2.5 Eoff 2 1.5 1 Eon 0.5 0 0 10 20 30 40 50 60 0 70 I D, Drain Current (A) Operating Frequency vs Drain Current 300 IDR, Reverse Drain Current (A) V DS=333V D=50% R G=5Ω T J=125°C T C=75°C ZVS ZCS 250 200 150 Hard switching 100 50 0 15 20 25 30 30 40 50 35 1000 100 Source to Drain Diode Forward Voltage T J=150°C 10 T J=25°C 1 40 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) ID, Drain Current (A) July, 2006 10 20 Gate Resistance (Ohms) 400 350 10 www.microsemi.com 7–8 APTM50HM75SCTG – Rev 2 Switching Energy (mJ) tf 60 0 Frequency (kHz) VDS=333V RG=5Ω T J=125°C L=100µH 100 t r and tf (ns) t d(on) and td(off) (ns) 100 APTM50HM75SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 0.9 1.4 1.2 0.7 1 0.5 0.8 0.6 0.3 0.4 0.1 0.2 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 400 TJ=25°C 35 30 T J=75°C 25 IR Reverse Current (µA) I F Forward Current (A) Reverse Characteristics Forward Characteristics 40 T J=175°C 20 TJ=125°C 15 10 5 300 0.5 1 1.5 2 2.5 3 T J=125°C 250 200 T J=75°C 150 100 T J=25°C 50 0 0 T J=175°C 350 3.5 VF Forward Voltage (V) 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage 800 C, Capacitance (pF) 700 600 500 400 300 200 100 0 1000 July, 2006 10 100 VR Reverse Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 8–8 APTM50HM75SCTG – Rev 2 1