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APTC90H12SCTG
VDSS = 900V
RDSon = 120mΩ max @ Tj = 25°C
ID = 30A @ Tc = 25°C
Full – Bridge Series & SiC parallel diodes
Super Junction MOSFET Power Module
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
VBUS
CR1A
CR3A
CR1B
Q1
CR3B
Q3
G3
G1
OUT1 OUT2
S1
CR2A
Q2
S3
CR4A
CR2B
CR4B
Q4
G2
G4
S2
S4
NTC1
0/VBUS
Features
• CoolMOS™
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
•
Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
•
•
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
NTC2
•
•
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
900
30
23
75
±20
120
250
8.8
2.9
1940
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTC90H12SCTG – Rev 3 October, 2013
Symbol
VDSS
APTC90H12SCTG
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
Typ
2.5
500
100
3
Tj = 25°C
Tj = 125°C
VGS = 0V,VDS = 900V
VGS = 0V,VDS = 900V
VGS = 10V, ID = 26A
VGS = VDS, ID = 3mA
VGS = ±20 V, VDS = 0V
Max
100
Unit
120
3.5
100
mΩ
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol Characteristic
Input Capacitance
Ciss
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V ; VDS = 100V
f = 1MHz
Min
Typ
6800
330
pF
270
VGS = 10V
VBus = 400V
ID = 26A
32
nC
115
70
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5Ω
20
ns
400
25
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5Ω
900
µJ
750
1278
µJ
867
0.5
°C/W
Max
Unit
V
µA
A
Series diode ratings and characteristics
VF
Characteristic
Test Conditions
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
VR = 1000V
DC Forward Current
Tc = 80°C
IF = 30A
IF = 60A
Diode Forward Voltage
IF = 30A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 30A
VR = 667V
di/dt = 200A/µs
Min
1000
Typ
250
30
1.9
2.2
Tj = 125°C
1.7
Tj = 25°C
290
Tj = 125°C
390
Tj = 25°C
670
Tj = 125°C
2350
Junction to Case Thermal Resistance
2.3
V
ns
nC
1.2
www.microsemi.com
°C/W
2–7
APTC90H12SCTG – Rev 3 October, 2013
Symbol
VRRM
IRM
IF
APTC90H12SCTG
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VR=1200V
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
32
56
10
1.6
2.3
200
1000
IF
DC Forward Current
VF
Diode Forward Voltage
IF = 10A
QC
Total Capacitive Charge
IF = 10A, VR = 1200V
di/dt =500A/µs
80
Q
Total Capacitance
f = 1MHz, VR = 200V
96
f = 1MHz, VR = 400V
69
RthJC
Unit
V
µA
A
1.8
3
V
nC
pF
Junction to Case Thermal Resistance
1.8
°C/W
Thermal and package characteristics
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To Heatsink
M5
Package Weight
Min
4000
-40
-40
-40
-40
2.5
Max
Unit
V
150
TJmax -25
125
100
4.7
160
N.m
g
Typ
50
5
3952
4
Unit
kΩ
%
K
%
°C
Temperature sensor NTC (see application note APT0406 on www.microsemi.com).
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Max
T: Thermistor temperature
1 ⎞⎤ RT: Thermistor value at T
⎡
⎛ 1
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦
⎣
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3–7
APTC90H12SCTG – Rev 3 October, 2013
Symbol
R25
∆R25/R25
B25/85
∆B/B
APTC90H12SCTG
SP4 Package outline (dimensions in mm)
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
Typical CoolMOS Performance Curve
VDS=600V
D=50%
RG=7.5Ω
TJ=125°C
TC=75°C
ZVS
150
ZCS
100
50
Hard
switching
0
10
12.5
15
17.5
20
22.5
25
3.0
2.5
2.0
1.5
1.0
0.5
25
2
Eon
1
100
125
150
3
Switching Energy (mJ)
Eon and Eoff (mJ)
VDS=600V
RG=7.5Ω
TJ=125°C
L=100µH
75
Switching Energy vs Gate Resistance
Switching Energy vs Current
2
50
TJ, Junction Temperature (°C)
ID, Drain Current (A)
Eoff
1
0
Eoff
2
Eon
VDS=600V
ID=26A
TJ=125°C
L=100µH
1
0
5
10
15
20
25
30
ID, Drain Current (A)
35
40
5
10
15
20
25
30
35
Gate Resistance (Ohms)
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4–7
APTC90H12SCTG – Rev 3 October, 2013
Frequency (kHz)
200
ON resistance vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
Operating Frequency vs Drain Current
250
APTC90H12SCTG
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
6V
80
5V
40
0
0
5
10
15
20
VDS , Drain to Source Voltage (V)
Maximum Safe Operating Area
limited by RDSon
10
10 ms
Single pulse
TJ =150°C
TC=25°C
ID, DC Drain Current (A)
ID, Drain Current (A)
100 µs
1
975
950
925
900
25
10
100
20
15
10
5
0
25
75
100
125
150
Coss
100
Crss
1
25 50 75 100 125 150 175 200
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Ciss
C, Capacitance (pF)
50
TC, Case Temperature (°C)
10000
0
125
25
1000
Capacitance vs Drain to Source Voltage
100000
10
100
30
VDS , Drain to Source Voltage (V)
1000
75
T J, Junction Temperature (°C)
0.1
1
50
DC Drain Current vs Case Temperature
35
1000
100
1000
10
VDS =400V
ID=26A
TJ =25°C
8
6
4
2
0
0
50
100
150
200
250
300
Gate Charge (nC)
VDS , Drain to Source Voltage (V)
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5–7
APTC90H12SCTG – Rev 3 October, 2013
ID, Drain Current (A)
VGS=20, 8V
Breakdown Voltage vs Temperature
BVDSS , Drain to Source Breakdown Voltage
Low Voltage Output Characteristics
120
APTC90H12SCTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
2
0.9
1.6
0.7
1.2
0.5
0.8
0.3
0.1
0.4
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
20
100
15
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
TJ=75°C
10
TJ=125°C
5
TJ=175°C
75
50
0.5
1
1.5
2
2.5
3
TJ=125°C
25
0
0
TJ=75°C
3.5
VF Forward Voltage (V)
TJ=175°C
0
400
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
700
600
500
400
300
200
100
1
10
100
VR Reverse Voltage
1000
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
www.microsemi.com
6–7
APTC90H12SCTG – Rev 3 October, 2013
0
APTC90H12SCTG
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTC90H12SCTG – Rev 3 October, 2013
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.