NSC LM3410XMY

LM3410
PowerWise® 525kHz/1.6MHz, Constant Current Boost and
SEPIC LED Driver with Internal Compensation
General Description
Features
The LM3410 constant current LED driver is a monolithic, high
frequency, PWM DC/DC converter in 5-pin SOT23, 6-pin LLP,
& 8-pin eMSOP packages. With a minimum of external components the LM3410 is easy to use. It can drive 2.8A typical
peak currents with an internal 170 mΩ NMOS switch. Switching frequency is internally set to either 525 kHz or 1.60 MHz,
allowing the use of extremely small surface mount inductors
and chip capacitors. Even though the operating frequency is
high, efficiencies up to 88% are easy to achieve. External
shutdown is included, featuring an ultra-low standby current
of 80 nA. The LM3410 utilizes current-mode control and internal compensation to provide high-performance over a wide
range of operating conditions. Additional features include
dimming, cycle-by-cycle current limit, and thermal shutdown.
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Space Saving SOT23-5 & 6-LLP Package
Input voltage range of 2.7V to 5.5V
Output voltage range of 3V to 24V
2.8A Typical Switch Current
High Switching Frequency
— 525 KHz (LM3410-Y)
— 1.6 MHz (LM3410-X)
170 mΩ NMOS Switch
190 mV Internal Voltage Reference
Internal Soft-Start
Current-Mode, PWM Operation
Thermal Shutdown
Applications
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LED Backlight Current Source
LiIon Backlight OLED & HB LED Driver
Handheld Devices
LED Flash Driver
Typical Boost Application Circuit
30038501
30038502
© 2008 National Semiconductor Corporation
300385
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LM3410 PowerWise® 525kHz/1.6MHz, Constant Current Boost and SEPIC LED Driver with
Internal Compensation
January 23, 2008
LM3410
Connection Diagrams
Top View
Top View
Top View
30038503
5–Pin SOT23
30038504
30038505
6-Pin LLP
8-Pin eMSOP
Ordering Information
Order Number
Frequency
LM3410YMF
LM3410YMFX
LM3410YSD
LM3410YSDX
525 kHz
LM3410YMY
LM3410YMYX
LM3410XMF
LM3410XMFX
LM3410XSD
LM3410XSDX
LM3410XMY
LM3410XMYX
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1.6 MHz
Package Type
Package Drawing
SOT23-5
MF05A
LLP-6
SDE06A
eMSOP-8
MUY08A
SOT23-5
MF05A
LLP-6
SDE06A
eMSOP-8
MUY08A
2
Supplied As
1000 units Tape & Reel
3000 units Tape & Reel
1000 units Tape & Reel
4500 units Tape & Reel
1000 units Tape & Reel
3500 units Tape & Reel
1000 units Tape & Reel
3000 units Tape & Reel
1000 units tape & reel
4500 units Tape & Reel
1000 units Tape & Reel
3500 units Tape & Reel
LM3410
Pin Descriptions - 5-Pin SOT23
Pin
Name
1
SW
Function
2
GND
3
FB
Feedback pin. Connect FB to external resistor divider to set output voltage.
4
DIM
Dimming & shutdown control input. Logic high enables operation. Duty Cycle from 0 to 100%. Do not allow
this pin to float or be greater than VIN + 0.3V.
5
VIN
Supply voltage pin for power stage, and input supply voltage.
Output switch. Connect to the inductor, output diode.
Signal and power ground pin. Place the bottom resistor of the feedback network as close as possible to this
pin.
Pin Descriptions - 6-Pin LLP
Pin
Name
Function
1
PGND
Power ground pin. Place PGND and output capacitor GND close together.
2
VIN
Supply voltage for power stage, and input supply voltage.
3
DIM
Dimming & shutdown control input. Logic high enables operation. Duty Cycle from 0 to 100%. Do not allow
this pin to float or be greater than VIN + 0.3V.
4
FB
Feedback pin. Connect FB to external resistor divider to set output voltage.
5
AGND
6
SW
DAP
GND
Signal ground pin. Place the bottom resistor of the feedback network as close as possible to this pin & pin
4.
Output switch. Connect to the inductor, output diode.
Signal & Power ground. Connect to pin 1 & pin 5 on top layer. Place 4-6 vias from DAP to bottom layer GND
plane.
Pin Descriptions - 8-Pin eMSOP
Pin
Name
1
-
Function
2
PGND
3
VIN
Supply voltage for power stage, and input supply voltage.
4
DIM
Dimming & shutdown control input. Logic high enables operation. Duty Cycle from 0 to 100%. Do not allow
this pin to float or be greater than VIN + 0.3V.
5
FB
Feedback pin. Connect FB to external resistor divider to set output voltage.
6
AGND
7
SW
8
-
DAP
GND
No Connect
Power ground pin. Place PGND and output capacitor GND close together.
Signal ground pin. Place the bottom resistor of the feedback network as close as possible to this pin & pin 5
Output switch. Connect to the inductor, output diode.
No Connect
Signal & Power ground. Connect to pin 2 & pin 6 on top layer. Place 4-6 vias from DAP to bottom layer GND
plane.
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LM3410
Storage Temp. Range
Soldering Information
Infrared/Convection Reflow (15sec)
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
VIN
SW Voltage
FB Voltage
DIM Voltage
ESD Susceptibility (Note 4)
Human Body Model
Junction Temperature (Note 2)
Operating Ratings
-0.5V to 7V
-0.5V to 26.5V
-0.5V to 3.0V
-0.5V to 7.0V
-65°C to 150°C
220°C
(Note 1)
VIN
VDIM (Note 5)
VSW
Junction Temperature Range
Power Dissipation
(Internal) SOT23-5
2kV
150°C
2.7V to 5.5V
0V to VIN
3V to 24V
-40°C to 125°C
400 mW
Electrical Characteristics
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the
junction temperature (TJ) range of -40°C to 125°C. Minimum and Maximum limits are guaranteed through test, design, or statistical
correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only.
VIN = 5V, unless otherwise indicated under the Conditions column.
Symbol
VFB
ΔVFB/VIN
Parameter
Feedback Voltage Line Regulation
IFB
Feedback Input Bias Current
FSW
Switching Frequency
DMAX
Maximum Duty Cycle
DMIN
Minimum Duty Cycle
RDS(ON)
Switch On Resistance
ICL
Switch Current Limit
SU
Start Up Time
IQ
Quiescent Current (switching)
Quiescent Current (shutdown)
UVLO
VDIM_H
Conditions
Min
Typ
Max
Units
178
190
202
mV
-
0.06
-
%/V
-
0.1
1
µA
LM3410-X
1200
1600
2000
LM3410-Y
360
525
680
LM3410-X
88
92
-
LM3410-Y
90
95
-
LM3410-X
-
5
-
LM3410-Y
-
2
-
SOT23-5 and eMSOP-8
-
170
330
190
350
2.80
-
A
µs
Feedback Voltage
Undervoltage Lockout
VIN = 2.7V to 5.5V
LLP-6
2.1
-
20
-
LM3410-X VFB = 0.25
-
7.0
11
LM3410-Y VFB = 0.25
-
3.4
7
All Options VDIM = 0V
-
80
-
VIN Rising
-
2.3
2.65
VIN Falling
1.7
1.9
-
-
-
0.4
1.8
-
-
Shutdown Threshold Voltage
Enable Threshold Voltage
kHz
%
%
mΩ
mA
nA
V
V
ISW
Switch Leakage
VSW = 24V
-
1.0
-
µA
IDIM
Dimming Pin Current
Sink/Source
-
100
-
nA
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Parameter
θJA
Junction to Ambient
0 LFPM Air Flow (Note 3)
θJC
Junction to Case (Note 3)
TSD
Thermal Shutdown Temperature (Note 2)
Conditions
Min
Typ
Max
LLP-6 and eMSOP-8 Package
-
80
-
SOT23-5 Package
-
118
-
LLP-6 and eMSOP-8 Package
-
18
-
SOT23-5 Package
-
60
-
-
165
-
Units
°C/W
°C/W
°C
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but does not guarantee specific performance limits. For guaranteed specifications and conditions, see the Electrical Characteristics.
Note 2: Thermal shutdown will occur if the junction temperature exceeds the maximum junction temperature of the device.
Note 3: Applies for packages soldered directly onto a 3” x 3” PC board with 2oz. copper on 4 layers in still air.
Note 4: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. Test method is per JESD22-A114.
Note 5: Do not allow this pin to float or be greater than VIN +0.3V.
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LM3410
Symbol
LM3410
Typical Performance Characteristics
All curves taken at VIN = 5.0V with configuration in typical
application circuit shown in Application Information section of this datasheet. TJ = 25C, unless otherwise specified.
LM3410-X Efficiency vs VIN (RSET = 4Ω)
LM3410-X Start-Up Signature
30038507
30038502
4 x 3.3V LEDs 500 Hz DIM FREQ D = 50%
DIM Freq & Duty Cycle vs Avg I-LED
30038508
30038509
Current Limit vs Temperature
RDSON vs Temperature
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30038511
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Oscillator Frequency vs Temperature - "Y"
30038512
30038513
VFB vs Temperature
30038580
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LM3410
Oscillator Frequency vs Temperature - "X"
LM3410
Simplified Internal Block Diagram
30038514
FIGURE 1. Simplified Block Diagram
begins at the falling edge of the reset pulse generated by the
internal oscillator. When this pulse goes low, the output control logic turns on the internal NMOS control switch. During
this on-time, the SW pin voltage (VSW) decreases to approximately GND, and the inductor current (IL) increases with a
linear slope. IL is measured by the current sense amplifier,
which generates an output proportional to the switch current.
The sensed signal is summed with the regulator’s corrective
ramp and compared to the error amplifier’s output, which is
proportional to the difference between the feedback voltage
and VREF. When the PWM comparator output goes high, the
output switch turns off until the next switching cycle begins.
During the switch off-time, inductor current discharges
through diode D1, which forces the SW pin to swing to the
output voltage plus the forward voltage (VD) of the diode. The
regulator loop adjusts the duty cycle (D) to maintain a regulated LED current.
Application Information
THEORY OF OPERATION
The LM3410 is a constant frequency PWM, boost regulator
IC. It delivers a minimum of 2.1A peak switch current. The
device operates very similar to a voltage regulated boost converter except that it regulates the output current through
LEDs. The current magnitude is set with a series resistor. This
series resistor multiplied by the LED current creates the feedback voltage (190 mV) which the converter regulates to. The
regulator has a preset switching frequency of either 525 kHz
or 1.60 MHz. This high frequency allows the LM3410 to operate with small surface mount capacitors and inductors,
resulting in a DC/DC converter that requires a minimum
amount of board space. The LM3410 is internally compensated, so it is simple to use, and requires few external components. The LM3410 uses current-mode control to regulate
the LED current. The following operating description of the
LM3410 will refer to the Simplified Block Diagram (Figure 1)
the simplified schematic (Figure 2), and its associated waveforms (Figure 3). The LM3410 supplies a regulated LED
current by switching the internal NMOS control switch at constant frequency and variable duty cycle. A switching cycle
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LM3410
Design Guide
SETTING THE LED CURRENT
30038515
FIGURE 2. Simplified Boost Topology Schematic
30038517
FIGURE 4. Setting ILED
The LED current is set using the following equation:
where RSET is connected between the FB pin and GND.
DIM PIN / SHUTDOWN MODE
The average LED current can be controlled using a PWM
signal on the DIM pin. The duty cycle can be varied between
0 & 100% to either increase or decrease LED brightness.
PWM frequencies in the range of 1 Hz to 25 kHz can be used.
For controlling LED currents down to the µA levels, it is best
to use a PWM signal frequency between 200-1 kHz. The
maximum LED current would be achieved using a 100% duty
cycle, i.e. the DIM pin always high.
LED-DRIVE CAPABILITY
When using the LM3410 in the typical application configuration, with LEDs stacked in series between the VOUT and FB
pin, the maximum number of LEDs that can be placed in series is dependent on the maximum LED forward voltage
(VFMAX).
(VFMAX x NLEDs) + 190 mV < 24V
When inserting a value for maximum VFMAX the LED forward
voltage variation over the operating temperature range
should be considered.
THERMAL SHUTDOWN
Thermal shutdown limits total power dissipation by turning off
the output switch when the IC junction temperature exceeds
165°C. After thermal shutdown occurs, the output switch
doesn’t turn on until the junction temperature drops to approximately 150°C.
30038516
FIGURE 3. Typical Waveforms
INDUCTOR SELECTION
The inductor value determines the input ripple current. Lower
inductor values decrease the physical size of the inductor, but
increase the input ripple current. An increase in the inductor
value will decrease the input ripple current.
CURRENT LIMIT
The LM3410 uses cycle-by-cycle current limiting to protect
the internal NMOS switch. It is important to note that this current limit will not protect the output from excessive current
during an output short circuit. The input supply is connected
to the output by the series connection of an inductor and a
diode. If a short circuit is placed on the output, excessive current can damage both the inductor and diode.
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LM3410
From the previous equations, the inductor value is then obtained.
Where
30038519
1/TS = fSW
FIGURE 5. Inductor Current
One must also ensure that the minimum current limit (2.1A)
is not exceeded, so the peak current in the inductor must be
calculated. The peak current (Lpk I) in the inductor is calculated by:
ILpk = IIN + ΔIL or ILpk = IOUT /D' + ΔiL
When selecting an inductor, make sure that it is capable of
supporting the peak input current without saturating. Inductor
saturation will result in a sudden reduction in inductance and
prevent the regulator from operating correctly. Because of the
speed of the internal current limit, the peak current of the inductor need only be specified for the required maximum input
current. For example, if the designed maximum input current
is 1.5A and the peak current is 1.75A, then the inductor should
be specified with a saturation current limit of >1.75A. There is
no need to specify the saturation or peak current of the inductor at the 2.8A typical switch current limit.
Because of the operating frequency of the LM3410, ferrite
based inductors are preferred to minimize core losses. This
presents little restriction since the variety of ferrite-based inductors is huge. Lastly, inductors with lower series resistance
(DCR) will provide better operating efficiency. For recommended inductors see Example Circuits.
The Duty Cycle (D) for a Boost converter can be approximated by using the ratio of output voltage (VOUT) to input voltage
(VIN).
Therefore:
Therefore:
INPUT CAPACITOR
An input capacitor is necessary to ensure that VIN does not
drop excessively during switching transients. The primary
specifications of the input capacitor are capacitance, voltage,
RMS current rating, and ESL (Equivalent Series Inductance).
The recommended input capacitance is 2.2 µF to 22 µF depending on the application. The capacitor manufacturer
specifically states the input voltage rating. Make sure to check
any recommended deratings and also verify if there is any
significant change in capacitance at the operating input voltage and the operating temperature. The ESL of an input
capacitor is usually determined by the effective cross sectional area of the current path. At the operating frequencies
of the LM3410, certain capacitors may have an ESL so large
that the resulting impedance (2πfL) will be higher than that
required to provide stable operation. As a result, surface
mount capacitors are strongly recommended. Multilayer ceramic capacitors (MLCC) are good choices for both input and
output capacitors and have very low ESL. For MLCCs it is
recommended to use X7R or X5R dielectrics. Consult capacitor manufacturer datasheet to see how rated capacitance
varies over operating conditions.
Inductor ripple in a LED driver circuit can be greater than what
would normally be allowed in a voltage regulator Boost &
Sepic design. A good design practice is to allow the inductor
to produce 20% to 50% ripple of maximum load. The increased ripple shouldn’t be a problem when illuminating
LEDs.
OUTPUT CAPACITOR
The LM3410 operates at frequencies allowing the use of ceramic output capacitors without compromising transient response. Ceramic capacitors allow higher inductor ripple
without significantly increasing output ripple. The output capacitor is selected based upon the desired output ripple and
transient response. The initial current of a load transient is
provided mainly by the output capacitor. The output
impedance will therefore determine the maximum voltage
perturbation. The output ripple of the converter is a function
Power losses due to the diode (D1) forward voltage drop, the
voltage drop across the internal NMOS switch, the voltage
drop across the inductor resistance (RDCR) and switching
losses must be included to calculate a more accurate duty
cycle (See Calculating Efficiency and Junction Temperature for a detailed explanation). A more accurate formula for
calculating the conversion ratio is:
Where η equals the efficiency of the LM3410 application.
Or:
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LM3410
of the capacitor’s reactance and its equivalent series resistance (ESR):
When using MLCCs, the ESR is typically so low that the capacitive ripple may dominate. When this occurs, the output
ripple will be approximately sinusoidal and 90° phase shifted
from the switching action.
Given the availability and quality of MLCCs and the expected
output voltage of designs using the LM3410, there is really no
need to review any other capacitor technologies. Another
benefit of ceramic capacitors is their ability to bypass high
frequency noise. A certain amount of switching edge noise
will couple through parasitic capacitances in the inductor to
the output. A ceramic capacitor will bypass this noise while a
tantalum will not. Since the output capacitor is one of the two
external components that control the stability of the regulator
control loop, most applications will require a minimum at 0.47
µF of output capacitance. Like the input capacitor, recommended multilayer ceramic capacitors are X7R or X5R.
Again, verify actual capacitance at the desired operating voltage and temperature.
30038530
FIGURE 6. Overvoltage Protection Circuit
PCB Layout Considerations
When planning layout there are a few things to consider when
trying to achieve a clean, regulated output. The most important consideration when completing a Boost Converter layout
is the close coupling of the GND connections of the COUT capacitor and the LM3410 PGND pin. The GND ends should be
close to one another and be connected to the GND plane with
at least two through-holes. There should be a continuous
ground plane on the bottom layer of a two-layer board except
under the switching node island. The FB pin is a high
impedance node and care should be taken to make the FB
trace short to avoid noise pickup and inaccurate regulation.
The RSET feedback resistor should be placed as close as
possible to the IC, with the AGND of RSET (R1) placed as close
as possible to the AGND (pin 5 for the LLP) of the IC. Radiated
noise can be decreased by choosing a shielded inductor. The
remaining components should also be placed as close as
possible to the IC. Please see Application Note AN-1229 for
further considerations and the LM3410 demo board as an example of a four-layer layout.
Below is an example of a good thermal & electrical PCB design.
DIODE
The diode (D1) conducts during the switch off time. A Schottky
diode is recommended for its fast switching times and low
forward voltage drop. The diode should be chosen so that its
current rating is greater than:
ID1 ≥ IOUT
The reverse breakdown rating of the diode must be at least
the maximum output voltage plus appropriate margin.
OUTPUT OVER-VOLTAGE PROTECTION
A simple circuit consisting of an external zener diode can be
implemented to protect the output and the LM3410 device
from an over-voltage fault condition. If an LED fails open, or
is connected backwards, an output open circuit condition will
occur. No current is conducted through the LED’s, and the
feedback node will equal zero volts. The LM3410 will react to
this fault by increasing the duty-cycle, thinking the LED current has dropped. A simple circuit that protects the LM3410
is shown in figure 6.
Zener diode D2 and resistor R3 is placed from VOUT in parallel
with the string of LEDs. If the output voltage exceeds the
breakdown voltage of the zener diode, current is drawn
through the zener diode, R3 and sense resistor R1. Once the
voltage across R1 and R3 equals the feedback voltage of
190mV, the LM3410 will limit its duty-cycle. No damage will
occur to the LM3410, the LED’s, or the zener diode. Once the
fault is corrected, the application will work as intended.
30038532
FIGURE 7. Boost PCB Layout Guidelines
This is very similar to our LM3410 demonstration boards that
are obtainable via the National Semiconductor website. The
demonstration board consists of a two layer PCB with a common input and output voltage application. Most of the routing
is on the top layer, with the bottom layer consisting of a large
ground plane. The placement of the external components
satisfies the electrical considerations, and the thermal perfor-
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LM3410
mance has been improved by adding thermal vias and a top
layer “Dog-Bone”.
For certain high power applications, the PCB land may be
modified to a "dog bone" shape (see Figure 8). Increasing the
size of ground plane and adding thermal vias can reduce the
RθJA for the application.
consideration. This contradiction is the placement of external
components that dissipate heat. The greatest external heat
contributor is the external Schottky diode. It would be nice if
you were able to separate by distance the LM3410 from the
Schottky diode, and thereby reducing the mutual heating effect. This will however create electrical performance issues.
It is important to keep the LM3410, the output capacitor, and
Schottky diode physically close to each other (see PCB layout
guidelines). The electrical design considerations outweigh the
thermal considerations. Other factors that influence thermal
performance are thermal vias, copper weight, and number of
board layers.
Thermal Definitions
Heat energy is transferred from regions of high temperature
to regions of low temperature via three basic mechanisms:
radiation, conduction and convection.
Radiation: Electromagnetic transfer of heat between masses
at different temperatures.
Conduction: Transfer of heat through a solid medium.
Convection: Transfer of heat through the medium of a fluid;
typically air.
Conduction & Convection will be the dominant heat transfer
mechanism in most applications.
RθJA: Thermal impedance from silicon junction to ambient air
temperature.
RθJC: Thermal impedance from silicon junction to device case
temperature.
CθJC: Thermal Delay from silicon junction to device case temperature.
CθCA: Thermal Delay from device case to ambient air temperature.
RθJA & RθJC: These two symbols represent thermal
impedances, and most data sheets contain associated values
for these two symbols. The units of measurement are °C/
Watt.
RθJA is the sum of smaller thermal impedances (see simplified
thermal model Figures 9 and 10). Capacitors within the model
represent delays that are present from the time that power
and its associated heat is increased or decreased from steady
state in one medium until the time that the heat increase or
decrease reaches steady state in the another medium.
The datasheet values for these symbols are given so that one
might compare the thermal performance of one package
against another. To achieve a comparison between packages, all other variables must be held constant in the comparison (PCB size, copper weight, thermal vias, power
dissipation, VIN, VOUT, load current etc). This does shed light
on the package performance, but it would be a mistake to use
these values to calculate the actual junction temperature in
your application.
30038533
FIGURE 8. PCB Dog Bone Layout
Thermal Design
When designing for thermal performance, one must consider
many variables:
Ambient Temperature: The surrounding maximum air temperature is fairly explanatory. As the temperature increases,
the junction temperature will increase. This may not be linear
though. As the surrounding air temperature increases, resistances of semiconductors, wires and traces increase. This will
decrease the efficiency of the application, and more power
will be converted into heat, and will increase the silicon junction temperatures further.
Forced Airflow: Forced air can drastically reduce the device
junction temperature. Air flow reduces the hot spots within a
design. Warm airflow is often much better than a lower ambient temperature with no airflow.
External Components: Choose components that are efficient, and you can reduce the mutual heating between devices.
PCB design with thermal performance in mind:
The PCB design is a very important step in the thermal design
procedure. The LM3410 is available in three package options
(5 pin SOT23, 8 pin eMSOP & 6 pin LLP). The options are
electrically the same, but difference between the packages is
size and thermal performance. The LLP and eMSOP have
thermal Die Attach Pads (DAP) attached to the bottom of the
packages, and are therefore capable of dissipating more heat
than the SOT23 package. It is important that the customer
choose the correct package for the application. A detailed
thermal design procedure has been included in this data
sheet. This procedure will help determine which package is
correct, and common applications will be analyzed.
There is one significant thermal PCB layout design consideration that contradicts a proper electrical PCB layout design
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LM3410 Thermal Models
Heat is dissipated from the LM3410 and other devices. The
external loss elements include the Schottky diode, inductor,
and loads. All loss elements will mutually increase the heat
on the PCB, and therefore increase each other’s temperatures.
12
LM3410
30038534
FIGURE 9. Thermal Schematic
30038535
FIGURE 10. Associated Thermal Model
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LM3410
Calculating Efficiency, and Junction
Temperature
We will talk more about calculating proper junction temperature with relative certainty in a moment. For now we need to
describe how to calculate the junction temperature and clarify
some common misconceptions.
One can see that if the loss elements are reduced to zero, the
conversion ratio simplifies to:
And we know:
A common error when calculating R θJA is to assume that the
package is the only variable to consider.
RθJA [variables]:
• Input Voltage, Output Voltage, Output Current, RDS(ON)
• Ambient temperature & air flow
• Internal & External components power dissipation
• Package thermal limitations
• PCB variables (copper weight, thermal via’s, layers
component placement)
Another common error when calculating junction temperature
is to assume that the top case temperature is the proper temperature when calculating RθJC. RθJC represents the thermal
impedance of all six sides of a package, not just the top side.
This document will refer to a thermal impedance called
.
represents a thermal impedance associated with just the
top case temperature. This will allow one to calculate the
junction temperature with a thermal sensor connected to the
top case.
The complete LM3410 Boost converter efficiency can be calculated in the following manner.
Therefore:
Calculations for determining the most significant power losses are discussed below. Other losses totaling less than 2%
are not discussed.
A simple efficiency calculation that takes into account the
conduction losses is shown below:
The diode, NMOS switch, and inductor DCR losses are included in this calculation. Setting any loss element to zero will
simplify the equation.
VD is the forward voltage drop across the Schottky diode. It
can be obtained from the manufacturer’s Electrical Characteristics section of the data sheet.
The conduction losses in the diode are calculated as follows:
Power loss (PLOSS) is the sum of two types of losses in the
converter, switching and conduction. Conduction losses usually dominate at higher output loads, where as switching
losses remain relatively fixed and dominate at lower output
loads.
Losses in the LM3410 Device: PLOSS = PCOND + PSW + PQ
Where PQ = quiescent operating power loss
Conversion ratio of the Boost Converter with conduction loss
elements inserted:
PDIODE = VD x ILED
Depending on the duty cycle, this can be the single most significant power loss in the circuit. Care should be taken to
choose a diode that has a low forward voltage drop. Another
concern with diode selection is reverse leakage current. Depending on the ambient temperature and the reverse voltage
across the diode, the current being drawn from the output to
the NMOS switch during time D could be significant, this may
increase losses internal to the LM3410 and reduce the overall
efficiency of the application. Refer to Schottky diode
manufacturer’s data sheets for reverse leakage specifications, and typical applications within this data sheet for diode
selections.
Another significant external power loss is the conduction loss
in the input inductor. The power loss within the inductor can
be simplified to:
Where
RDCR = Inductor series resistance
www.national.com
14
Quiescent Power Losses
IQ is the quiescent operating current, and is typically around
1.5 mA.
or
PQ = IQ x VIN
RSET Power Loss
The LM3410 conduction loss is mainly associated with the
internal power switch:
PCOND-NFET = I2SW-rms x RDSON x D
Example Efficiency Calculation:
Operating Conditions:
5 x 3.3V LEDs + 190mVREF ≊ 16.7V
TABLE 1. Operating Conditions
VIN
3.3V
VOUT
16.7V
ILED
50mA
30038542
FIGURE 11. LM3410 Switch Current
VD
0.45V
fSW
1.60MHz
IQ
3mA
tRISE
10nS
tFALL
10nS
(small ripple approximation)
RDSON
225mΩ
PCOND-NFET = IIN2 x RDSON x D
LDCR
75mΩ
or
D
0.82
IIN
0.31A
ΣPCOND + PSW + PDIODE + PIND + PQ = PLOSS
Quiescent Power Loss:
PQ = IQ x VIN = 10 mW
The value for RDSON should be equal to the resistance at the
junction temperature you wish to analyze. As an example, at
125°C and RDSON = 250 mΩ (See typical graphs for value).
Switching losses are also associated with the internal power
switch. They occur during the switch on and off transition periods, where voltages and currents overlap resulting in power
loss.
The simplest means to determine this loss is to empirically
measuring the rise and fall times (10% to 90%) of the switch
at the switch node:
Switching Power Loss:
PSWR = 1/2(VOUT x IIN x fSW x tRISE) ≊ 40 mW
PSWF = 1/2(VOUT x IIN x fSW x tFALL) ≊ 40 mW
PSW = PSWR + PSWF = 80 mW
Internal NFET Power Loss:
RDSON = 225 mΩ
PCONDUCTION = IIN2 x D x RDSON = 17 mW
PSWR = 1/2(VOUT x IIN x fSW x tRISE)
IIN = 310 mA
PSWF = 1/2(VOUT x IIN x fSW x tFALL)
Diode Loss:
VD = 0.45V
PSW = PSWR + PSWF
PDIODE = VD x ILED = 23 mW
Typical Switch-Node Rise and Fall Times
VIN
VOUT
tRISE
tFALL
3V
5V
6nS
4nS
5V
12V
6nS
5nS
3V
12V
8nS
7nS
5V
18V
10nS
8nS
Inductor Power Loss:
RDCR = 75 mΩ
PIND = IIN2 x RDCR = 7 mW
15
www.national.com
LM3410
PIND = IIN2RDCR
LM3410
Total Power Losses are:
TABLE 2. Power Loss Tabulation
VIN
3.3V
VOUT
16.7V
ILED
50mA
POUT
825W
VD
0.45V
PDIODE
23mW
fSW
1.6MHz
IQ
10nS
PSWR
40mW
tRISE
10nS
PSWF
40mW
IQ
3mA
PQ
10mW
RDSON
225mΩ
PCOND
17mW
LDCR
75mΩ
PIND
7mW
PLOSS
137mW
D
0.82
η
85%
SOT23-5 = 93°C/W
SOT23-5 = 56°C/W
Typical LLP & eMSOP typical applications will produce
numbers in the range of 50°C/W to 65°C/W, and
will vary
between 18°C/W and 28°C/W. These values are for PCB’s
with two and four layer boards with 0.5 oz copper, and four to
six thermal vias to bottom side ground plane under the DAP.
The thermal impedances calculated above are higher due to
the small amount of power being dissipated within the device.
Note: To use these procedures it is important to dissipate an
amount of power within the device that will indicate a true
thermal impedance value. If one uses a very small internal
dissipated value, one can see that the thermal impedance
calculated is abnormally high, and subject to error. Figure 12
shows the nonlinear relationship of internal power dissipation
vs .
.
PINTERNAL = PCOND + PSW = 107 mW
Calculating
and
We now know the internal power dissipation, and we are trying to keep the junction temperature at or below 125°C. The
next step is to calculate the value for
and/or
. This is
actually very simple to accomplish, and necessary if you think
you may be marginal with regards to thermals or determining
what package option is correct.
The LM3410 has a thermal shutdown comparator. When the
silicon reaches a temperature of 165°C, the device shuts
down until the temperature drops to 150°C. Knowing this, one
or the
of a specific application. Becan calculate the
cause the junction to top case thermal impedance is much
lower than the thermal impedance of junction to ambient air,
the error in calculating
is lower than for
. However,
you will need to attach a small thermocouple onto the top case
value.
of the LM3410 to obtain the
Knowing the temperature of the silicon when the device shuts
down allows us to know three of the four variables. Once we
calculate the thermal impedance, we then can work backwards with the junction temperature set to 125°C to see what
maximum ambient air temperature keeps the silicon below
the 125°C temperature.
Procedure:
Place your application into a thermal chamber. You will need
to dissipate enough power in the device so you can obtain a
good thermal impedance value.
Raise the ambient air temperature until the device goes into
thermal shutdown. Record the temperatures of the ambient
air and/or the top case temperature of the LM3410. Calculate
the thermal impedances.
Example from previous calculations (SOT23-5 Package):
PINTERNAL = 107 mW
TA @ Shutdown = 155°C
TC @ Shutdown = 159°C
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30038551
FIGURE 12. RθJA vs Internal Dissipation
For 5-pin SOT23 package typical applications, RθJA numbers
will vary between
will range from 80°C/W to 110°C/W, and
50°C/W and 65°C/W. These values are for PCB’s with two &
four layer boards with 0.5 oz copper, with two to four thermal
vias from GND pin to bottom layer.
Here is a good rule of thumb for typical thermal impedances,
and an ambient temperature maximum of 75°C: If your design
requires that you dissipate more than 400mW internal to the
LM3410, or there is 750mW of total power loss in the application, it is recommended that you use the 6 pin LLP or the 8
pin eMSOP package with the exposed DAP.
SEPIC Converter
The LM3410 can easily be converted into a SEPIC converter.
A SEPIC converter has the ability to regulate an output voltage that is either larger or smaller in magnitude than the input
voltage. Other converters have this ability as well (CUK and
Buck-Boost), but usually create an output voltage that is opposite in polarity to the input voltage. This topology is a perfect
fit for Lithium Ion battery applications where the input voltage
for a single cell Li-Ion battery will vary between 2.7V & 4.5V
and the output voltage is somewhere in between. Most of the
16
Therefore:
30038556
FIGURE 13. Inductor Volt-Sec Balance Waveform
Small ripple approximation:
In a well-designed SEPIC converter, the output voltage, and
input voltage ripple, the inductor ripple IL1 and IL2 is small in
comparison to the DC magnitude. Therefore it is a safe approximation to assume a DC value for these components. The
main objective of the Steady State Analysis is to determine
the steady state duty-cycle, voltage and current stresses on
all components, and proper values for all components.
In a steady-state converter, the net volt-seconds across an
inductor after one cycle will equal zero. Also, the charge into
a capacitor will equal the charge out of a capacitor in one cycle.
Therefore:
Applying Charge balance on C1:
Since there are no DC voltages across either inductor, and
capacitor C3 is connected to Vin through L1 at one end, or to
ground through L2 on the other end, we can say that
VC3 = VIN
Therefore:
This verifies the original conversion ratio equation.
It is important to remember that the internal switch current is
equal to IL1 and IL2 during the D interval. Design the converter
so that the minimum guaranteed peak switch current limit
(2.1A) is not exceeded.
Substituting IL1 into IL2
IL2 = ILED
30038552
FIGURE 14. HB/OLED SEPIC CONVERTER Schematic
17
www.national.com
LM3410
The average inductor current of L2 is the average output load.
analysis of the LM3410 Boost Converter is applicable to the
LM3410 SEPIC Converter.
SEPIC Design Guide:
SEPIC Conversion ratio without loss elements:
LM3410
Steady State Analysis with Loss
Elements
30038559
FIGURE 15. SEPIC Simplified Schematic
Using inductor volt-second balance & capacitor charge balance, the following equations are derived:
TABLE 3. Efficiencies for Typical SEPIC Applications
IL2 = (ILED)
and
IL1 = (ILED) x (D/D')
VIN
2.7V
VIN
3.3V
VIN
5V
VOUT
3.1V
VOUT
3.1V
VOUT
3.1V
IIN
770mA
IIN
600mA
IIN
375mA
ILED
500mA
ILED
500mA
ILED
500mA
η
75%
η
80%
η
83%
SEPIC Converter PCB Layout
The layout guidelines described for the LM3410 Boost-Converter are applicable to the SEPIC OLED Converter. Figure
16 is a proper PCB layout for a SEPIC Converter.
Therefore:
One can see that all variables are known except for the duty
cycle (D). A quadratic equation is needed to solve for D. A
less accurate method of determining the duty cycle is to assume efficiency, and calculate the duty cycle.
30038565
FIGURE 16. HB/OLED SEPIC PCB Layout
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18
LM3410
LM3410X SOT23-5 Design Example 1:
5 x 1206 Series LED String Application
LM3410X (1.6MHz): VIN = 2.7V to 5.5V, 5 x 3.3V LEDs, (VOUT ≊ 16.5V) ILED ≊ 50mA
30038581
Part ID
Part Value
Manufacturer
Part Number
U1
2.8A ISW LED Driver
NSC
LM3410XMF
C1, Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
D1, Catch Diode
0.4Vf Schottky 500mA, 30VR
Diodes Inc
MBR0530
L1
10µH 1.2A
Coilcraft
DO1608C-103
R1
4.02Ω, 1%
Vishay
CRCW08054R02F
R2
100kΩ, 1%
Vishay
CRCW08051003F
LED's
SMD-1206, 50mA, Vf ≊ 3 .6V
Lite-On
LTW-150k
19
www.national.com
LM3410
LM3410Y SOT23-5 Design Example 2:
5 x 1206 Series LED String Application
LM3410Y (550kHz): VIN = 2.7V to 5.5V, 5 x 3.3V LEDs, (VOUT ≊ 16.5V) ILED ≊ 50mA
30038581
Part ID
Part Value
Manufacturer
Part Number
U1
2.8A ISW LED Driver
NSC
LM3410YMF
C1, Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
D1, Catch Diode
0.4Vf Schottky 500mA, 30VR
Diodes Inc
MBR0530
L1
15µH 1.2A
Coilcraft
DO1608C-153
R1
4.02Ω, 1%
Vishay
CRCW08054R02F
R2
100kΩ, 1%
Vishay
CRCW08051003F
LED's
SMD-1206, 50mA, Vf ≊ 3 .6V
Lite-On
LTW-150k
www.national.com
20
LM3410
LM3410X LLP-6 Design Example 3:
7 LEDs x 5 LED String Backlighting Application
LM3410X (1.6MHz): VIN = 2.7V to 5.5V, 7 x 5 x 3.3V LEDs, (VOUT ≊ 16.7V), ILED ≊ 25mA
300385a2
Part ID
Part Value
Manufacturer
Part Number
U1
2.8A ISW LED Driver
NSC
LM3410XSD
C1, Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
4.7µF, 25V, X5R
TDK
C2012X5R1E475M
D1, Catch Diode
0.4Vf Schottky 500mA, 30VR
Diodes Inc
MBR0530
L1
8.2µH, 2A
Coilcraft
MSS6132-822ML
R1
1.15Ω, 1%
Vishay
CRCW08051R15F
R2
100kΩ, 1%
Vishay
CRCW08051003F
LED's
SMD-1206, 50mA, Vf ≊ 3 .6V
Lite-On
LTW-150k
21
www.national.com
LM3410
LM3410X LLP-6 Design Example 4:
3 x HB LED String Application
LM3410X (1.6MHz): VIN = 2.7V to 5.5V, 3 x 3.4V LEDs, (VOUT ≊ 11V) ILED ≊ 340mA
30038567
Part ID
Part Value
Manufacturer
Part Number
U1
2.8A ISW LED Driver
NSC
LM3410XSD
C1, Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
D1, Catch Diode
0.4Vf Schottky 500mA, 30VR
Diodes Inc
MBR0530
L1
10µH 1.2A
Coilcraft
DO1608C-103
R1
1.00Ω, 1%
Vishay
CRCW08051R00F
R2
100kΩ, 1%
Vishay
CRCW08051003F
R3
1.50Ω, 1%
Vishay
CRCW08051R50F
HB - LED's
340mA, Vf ≊ 3 .6V
CREE
XREWHT-L1-0000-0901
www.national.com
22
LM3410
LM3410Y SOT23-5 Design Example 5:
5 x 1206 Series LED String Application with OVP
LM3410Y (525kHz): VIN = 2.7V to 5.5V, 5 x 3.3V LEDs, (VOUT ≊ 16.5V) ILED ≊ 50mA
30038568
Part ID
Part Value
Manufacturer
Part Number
U1
2.8A ISW LED Driver
NSC
LM3410YMF
C1 Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
D1, Catch Diode
0.4Vf Schottky 500mA,
Diodes Inc
MBR0530
D2
18V Zener diode
Diodes Inc
1N4746A
L1
15µH, 0.70A
TDK
VLS4012T-150MR65
R1
4.02Ω, 1%
Vishay
CRCW08054R02F
R2
100kΩ, 1%
Vishay
CRCW08051003F
R3
100kΩ, 1%
Vishay
CRCW06031000F
LED’s
SMD-1206, 50mA, Vf ≊ 3 .6V
Lite-On
LTW-150k
23
www.national.com
LM3410
LM3410X SEPIC LLP-6 Design Example 6:
HB/OLED Illumination Application
LM3410X (1.6MHz): VIN = 2.7V to 5.5V, (VOUT ≊ 3.8V) ILED ≊ 300mA
30038552
Part ID
Part Value
Manufacturer
U1
2.8A ISW LED Driver
NSC
LM3410XSD
C1 Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106K
C2 Output Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106K
C3 Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
D1, Catch Diode
0.4Vf, Schottky 1A, 20VR
Diodes Inc
DFLS120L
L1 & L2
4.7µH 3A
Coilcraft
MSS6132-472
R1
665 mΩ, 1%
Vishay
CRCW0805R665F
R2
100kΩ, 1%
Vishay
CRCW08051003F
HB - LED’s
350mA, Vf ≊ 3 .6V
CREE
XREWHT-L1-0000-0901
www.national.com
24
Part Number
LM3410
LM3410X LLP-6 Design Example 7:
Boost Flash Application
LM3410X (1.6MHz): VIN = 2.7V to 5.5V, (VOUT ≊ 8V) ILED ≊ 1.0A Pulsed
30038570
Part ID
Part Value
Manufacturer
Part Number
U1
2.8A ISW LED Driver
NSC
LM3410XSD
C1 Input Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
10µF,16V, X5R
TDK
C2012X5R1A106M
D1, Catch Diode
0.4Vf Schottky 500mA, 30VR
Diodes Inc
MBR0530
L1
4.7µH, 3A
Coilcraft
MSS6132-472
R1
200mΩ, 1%
Vishay
CRCW0805R200F
LED’s
500mA, Vf ≊ 3 .6V, IPULSE = 1.0A
CREE
XREWHT-L1-0000-0901
25
www.national.com
LM3410
LM3410X SOT23-5 Design Example 8:
5 x 1206 Series LED String Application with VIN > 5.5V
LM3410X (1.6MHz): VPWR = 9V to 14V, (VOUT ≊ 16.5V) ILED ≊ 50mA
Part ID
Part Value
Mfg
30038571
Part Number
U1
2.8A ISW LED Driver
NSC
LM3410XMF
C1 Input VPWR Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 Output Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
C2 Input VIN Cap
0.1µF, 6.3V, X5R
TDK
C1005X5R1C104K
D1, Catch Diode
0.43Vf, Schotky, 0.5A, 30VR
Diodes Inc
MBR0530
www.national.com
L1
10µH 1.2A
Coilcraft
DO1608C-103
R1
4.02Ω, 1%
Vishay
CRCW08054R02F
R2
100kΩ, 1%
Vishay
CRCW08051003F
R3
576Ω, 1%
3.3V Zener, SOT23
Vishay
CRCW08055760F
D2
Diodes Inc
BZX84C3V3
LED’s
SMD-1206, 50mA, Vf ≊ 3 .6V
Lite-On
LTW-150k
26
LM3410
LM3410X LLP-6 Design Example 9:
Camera Flash or Strobe Circuit Application
LM3410X (1.6MHz): VIN = 2.7V to 5.5, (VOUT ≊ 7.5V), ILED ≊ 1.5A Flash
30038572
Part ID
Part Value
Mfg
Part Number
U1
2.8A ISW LED Driver
NSC
LM3410XSD
C1608X5R0J106K
C1 Input VPWR Cap
10µF, 6.3V, X5R
TDK
C2 Output Cap
220µF, 10V, Tanatalum
KEMET
T491V2271010A2
C3 Cap
10µF, 16V, X5R
TDK
C3216X5R0J106K
D1, Catch Diode
0.43Vf, Schotky, 1.0A, 20VR
Diodes Inc
DFLS120L
L1
3.3µH 2.7A
Coilcraft
MOS6020-332
R1
1.0kΩ, 1%
Vishay
CRCW08051001F
R2
37.4kΩ, 1%
Vishay
CRCW08053742F
R3
100kΩ, 1%
Vishay
CRCW08051003F
R4
Vishay
CRCW0805R150F
Q1, Q2
0.15Ω, 1%
30V, ID = 3.9A
ZETEX
ZXMN3A14F
LED’s
500mA, Vf ≊ 3 .6V, IPULSE = 1.5A
CREE
XREWHT-L1-0000-00901
27
www.national.com
LM3410
LM3410X SOT23-5 Design Example 10:
5 x 1206 Series LED String Application with VIN & VPWR Rail > 5.5V
LM3410X (1.6MHz): VPWR = 9V to 14V, VIN = 2.7V to 5.5V, (VOUT ≊ 14V) ILED ≊ 50mA
30038573
Part ID
Part Value
Mfg
Part Number
U1
2.8A ISW LED Driver
NSC
LM3410XMF
C1 Input VPWR Cap
10µF, 6.3V, X5R
TDK
C2012X5R0J106M
C2 VOUT Cap
2.2µF, 25V, X5R
TDK
C2012X5R1E225M
C3 Input VIN Cap
0.1µF, 6.3V, X5R
TDK
C1005X5R1C104K
D1, Catch Diode
0.43Vf, Schotky, 0.5A, 30VR
Diodes Inc
MBR0530
www.national.com
L1
10µH 1.5A
Coilcraft
DO1608C-103
R1
4.02Ω, 1%
Vishay
CRCW08054R02F
R2
100kΩ, 1%
Vishay
CRCW08051003F
LED’s
SMD-1206, 50mA, Vf ≊ 3 .6V
Lite-On
LTW-150k
28
LM3410
LM3410X LLP-6 Design Example 11:
Boot-Strap Circuit to Extended Battery Life
30038574
LM3410X (1.6MHz): VIN = 1.9V to 5.5V, VIN > 2.3V (TYP) for Start Up
Part ID
Part Value
Mfg
U1
2.8A ISW LED Driver
NSC
Part Number
LM3410XSD
C1 Input VPWR Cap
10µF, 6.3V, X5R
TDK
C1608X5R0J106K
C2 VOUT Cap
10µF, 6.3V, X5R
TDK
C1608X5R0J106K
C3 Input VIN Cap
0.1µF, 6.3V, X5R
TDK
C1005X5R1C104K
D1, Catch Diode
0.43Vf, Schotky, 1.0A, 20VR
Diodes Inc
DFLS120L
D2, D3
Dual Small Signal Schotky
Diodes Inc
BAT54CT
L1, L2
3.3µH 3A
Coilcraft
MOS6020-332
R1
665 mΩ, 1%
Vishay
CRCW0805R665F
R3
100kΩ, 1%
Vishay
CRCW08051003F
HB/OLED
3.4Vf, 350mA
TT Electronics/Optek
OVSPWBCR44
29
www.national.com
LM3410
Physical Dimensions inches (millimeters) unless otherwise noted
6-Lead LLP Package
NS Package Number SDE06A
5-Lead SOT23-5 Package
NS Package Number MF05A
www.national.com
30
LM3410
8-Lead eMSOP Package
NS Package Number MUY08A
31
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LM3410 PowerWise® 525kHz/1.6MHz, Constant Current Boost and SEPIC LED Driver with
Internal Compensation
Notes
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