Document No. 001-92362 Rev. *B ECN #: 4894151 Cypress Semiconductor Automotive Product Qualification Report QTP# 134001 VERSION *B August 2015 Automotive Generation4 TouchScreen Device Family S8PM-10P Technology, Fab4 CY8CTMA1036AA/AS CY8TMA460AA/AS CY8CTMA768AA/AS CY8CTMA461AA/AS Automotive TrueTouch ® Multi-Touch All-Points Touchscreen Controller FOR ANY QUESTIONS ON THIS REPORT PLEASE CONTACT [email protected] : OR VIA LINK A CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Rene Rodgers Reliability Manager Approved By: Don Darling Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 10 Document No. 001-92362 Rev. *B ECN #: 4894151 PRODUCT QUALIFICATION HISTORY Qual Report 134001 Description of Qualification Purpose Qualification of Automotive Generation4 TouchScreen Device S8PM-10P Technology in Fab4 using 8A20400FC device Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 10 Date Comp Apr 14 Document No. 001-92362 Rev. *B ECN #: 4894151 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualification of Automotive Generation4 S8PM-10P Technology in Fab4 using 8A20400FC device CY8CTMA1036AA/AS , CY8TMA460AA/AS Marketing Part #: CY8CTMA768AA/AS, CY8CTMA461AA/AS Device Description: Automotive PSOC Programmable System – On – Chip Cypress Division: Cypress Semiconductor Corporation – Programmable Systems Division(PSD) TECHNOLOGY/FAB PROCESS DESCRIPTION – S8DIN-5RP Number of Metal Layers: Metal Metal 1: 100A Ti / 3200Al-0.5%Cu / 300A TiW Composition: Metal 2: 100A Ti / 3200Al-0.5%Cu / 350A TiW 5 Metal 3: 150A Ti / 7200Al-0.5%Cu / 350A TiW Metal 4: 150A Ti / 7200Al-0.5%Cu / 350A TiW Metal 5: 300A CoTi/12000A Al-0.5% Cu/300A TiW Passivation Type and Materials: NFUSOX/ Nitride Generic Process Technology/Design Rule (S8 / 130 nm drawn): Gate Oxide Material/Thickness (MOS): SiO2 / 32A/110A Name/Location of Die Fab (prime) Facility: CMI / Minnesota Die Fab Line ID/Wafer Process ID: Fab4, S8PM-10P PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE QTP NUMBER 100L TQFP CML-RA 134503 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 3 of 10 Document No. 001-92362 Rev. *B ECN #: 4894151 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Mold Compound Name/Manufacturer: AZ100 100L- Thin Quad Flatpack Package (TQFP) (14x14x1.4mm) KEG6000 / Kyocera Mold Compound Flammability Rating: V-O per UL94 Mold Compound Alpha Emission Rate: 0.002 cph/m2 Oxygen Rating Index: N/A Lead Frame Designation: Full Metal Pad – slotted Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAuAg (Roughened) Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Wafer saw Die Attach Supplier: Henkel Die Attach Material: QMI 509 Die Attach Method: Epoxy Bond Diagram Designation: 001-88210 Wire Bond Method: Thermosonic Wire Material/Size: Au / 0.8mil Thermal Resistance Theta JA °C/W: 35.44 C/W Package Cross Section Yes/No: Yes Assembly Process Flow: 11-21099 Name/Location of Assembly (prime) facility: CML-RA MSL Level 3 Reflow Profile 260C Package Outline, Type, or Name: ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other packages availability. 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Page 4 of 10 Document No. 001-92362 Rev. *B ECN #: 4894151 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate NVM Endurance /High Temperature Operating Life Latent Failure Rate Test Condition (Temp/Bias) AEC-Q100-008 and JESD22-A108, 150°C Dynamic Operating Condition, Vcc Max = 5.75V JESD22-A108, 150°C Dynamic Operating Condition, Vcc Max = 5.75V AEC-Q100-005 and JESD22-A108, 150°C Dynamic Operating Condition, Vcc Max = 2.07V High Accelerated Saturation Test (HAST) JESD22-A110, 130C, 5.5V, 85%RH Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C Temperature Cycle JESD22-A104, -65C to 150C Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C JESD22-A102, 121C, 100%RH, 15 Psig Precondition: JESD22-A113 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C Pressure Cooker Result P/F P P P P P P Electrostatic Discharge Human Body Model (ESD-HBM) AEC-Q100-002 500V/1000V/1500V/2000V P Electrostatic Discharge Charge Device Model (ESD-CDM) AEC-Q100-011 250V/500V P Wire Ball Shear AEC-Q100-001 P Wire Bond Pull Mil-Std 883, Method 2011 P Electrical Distribution AEC-Q100-009 P NVM Endurance/Data Retention AEC-Q100-005, 150C, non-biased P Final Visual JESD22-B101B P Physical Dimensions JESD22-B100/108 P Solderability JESD22-B102 P Acoustic Microscopy JEDEC JSTD-020 P Static Latch-up AEC-Q100-004, 85C, 140mA Post Temperature Cycle Wire Mil-Std 883, Method 2011 Bond Pull Dye Penetrant Test Criteria: No Package Crack RELIABILITY FAILURE RATE SUMMARY Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 10 P P P Document No. 001-92362 Rev. *B ECN #: 4894151 Stress/Test High Temperature Operating Life Early Failure Rate NVM Endurance / High Temperature Operating Life1,2 Long Term Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 11,418 Devices 0 N/A N/A 0 PPM 64,872 Device Hours 0 0.7 170 28 FIT 1 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate.. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. K = Boltzmann’s constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 10 Document No. 001-92362 Rev. *B ECN #: 4894151 Reliability Test Data QTP #: Device Fab Lot # 134001 Assy Lot # Assy Loc Duration Samp Rej CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R COMP 22 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-R COMP 22 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-R COMP 22 0 CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R COMP 30 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-R COMP 90 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-R COMP 30 0 CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R COMP 30 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-R COMP 90 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-R COMP 30 0 CY8CTMA1036AA(8A20412FC) 4325759 611341681 CML-R COMP 30 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-R COMP 30 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-R COMP 30 0 Failure Mechanism STRESS: ACOUSTICS STRESS: BALL SHEAR STRESS: BOND PULL STRESS: ELECTRICAL DISTRIBUTION STRESS: ENDURANCE / DATA RETENTION TEST CY8CTMA884AE (8A38661CC) 4202010 611223247 JCET-JT 1000 79 0 CY8CTMA616AA (8A38661CC) 4207553 611223278 JCET-JT 1000 77 0 CY8CTMA616AA (8A38661CC) 4208826 611223245 JCET-JT 1000 73 0 STRESS: ENDURANCE / HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 2.07V, Vcc Max CY8CTMA884AE (8A38661CC) 4202010 611223247 JCET-JT 408 75 0 CY8CTMA616AA (8A38661CC) 4207553 611223278 JCET-JT 408 80 0 CY8CTMA616AA (8A38661CC) 4208826 611223245 JCET-JT 408 78 0 CML-R COMP 3 0 CML-R COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, 250V CY8CTMA1036AA (8A20412FC) 4325759 611341681 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY8CTMA1036AA (8A20412FC) 4325759 611341681 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 7 of 10 Document No. 001-92362 Rev. *B ECN #: 4894151 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 134001 Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,000V CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R COMP 3 0 COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 1,500V CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22-A114-B, 2,000V CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R COMP 3 0 CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R COMP 4656 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-R COMP 4817 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-R COMP 4819 0 STRESS: FINAL VISUAL STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.5V, PRE COND 192 HR 30C/60%RH, MSL3 CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-RA 96 80 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-RA 96 80 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-RA 96 80 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 5.75V, Vcc Max CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R 48 3721 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-R 48 3714 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-R 48 3983 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 5.75V, Vcc Max CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-RA 408 79 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-RA 408 80 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-RA 408 81 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-RA 96 80 0 CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-RA 168 80 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-RA 96 80 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-RA 168 80 0 CY8CTMA768AA (8A20412FC) 4325760 611346408 CML-RA 96 79 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-RA 168 79 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 8 of 10 Document No. 001-92362 Rev. *B ECN #: 4894151 Reliability Test Data QTP #: Device Fab Lot # 134001 Assy Lot # Assy Loc Duration Samp Rej CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R COMP 30 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-R COMP 30 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-R COMP 30 0 CML-R COMP 5 0 Failure Mechanism STRESS: PHYSICAL DIMENSION STRESS: POST TEMPERATURE CYCLE WIRE BOND PULL CY8CTMA1036AA (8A20412FC) 4325759 611341681 STRESS: PRE /POST LFR CRITICAL PARAMETER CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R COMP 30+2 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-R COMP 30+2 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-R COMP 30+2 0 611341681 CML-R COMP 6 0 CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R COMP 15 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-R COMP 15 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-R COMP 15 0 STRESS: STATIC LATCH-UP TESTING, +/140mA CY8CTMA1036AA (8A20412FC) 4325759 STRESS: SOLDERABILITY STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R 500 85 0 CY8CTMA1036AA (8A20412FC) 4325759 611341681 CML-R 1000 80 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-R 500 80 0 CY8CTMA460AA (8A20412FC) 4325760 611343786 CML-R 1000 80 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-R 500 79 0 CY8CTMA768AA (8A20412FC) 4335145 611346408 CML-R 1000 79 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 10 Document No. 001-92362 Rev. *B ECN #: 4894151 Document History Page Document Title: QTP#134001: AUTOMOTIVE GENERATION4 TOUCHSCREEN DEVICE FAMILY S8PM-10P TECHNOLOGY, FAB4 Document Number: 001-92362 Rev. ECN No. Orig. of Change Description of Change ** *A *B HSTO HSTO Initial spec release 4368151 4751547 4894151 HSTO Update reference for Reliability Director Added device MPN CY8CTMA461AA/AS in marketing part# table Added reference QTP# in package availability table DCON Removed Distribution and Posting in the document history page. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 10