QTP# 161003:CCG1 DEVICE FAMILY S8PF-10R TECHNOLOGY, FAB 25

Document No. 002-11632 Rev. *A
ECN #: 5178588
Cypress Semiconductor
Product Qualification Report
QTP# 161003 VERSION **
March 2016
CCG1 Device Family
S8PF-10R, Fab 25
CYPD1103**
CYPD1104**
CYPD1105**
CYPD1120**
CYPD1121**
USB Type-C Port Controller with Power Delivery
CYPD1122**
CYPD1131**
CYPD1132**
CYPD1134**
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Josephine Pineda (JYF)
Sr. Reliability Engineer
Reviewed By:
Rene Rodgers (RT)
Sr. MTS Reliability Engineer
Approved By:
Don Darling
Reliability Director (DCDA)
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 1 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
PRODUCT QUALIFICATION HISTORY
QTP
Number
Description of Qualification Purpose
Date
151008
Qualification of S8* Technology in Fab 25 using TSG6M Device
Dec. 2015
161003
Qualification of CCG1 Device in Fab 25 using S8PF-10R Technology
Mar. 2016
Company Confidential
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Page 2 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: To qualify CCG1 device in Fab 25 using S8PF-10R technology
Device Description:
CYPD1103**/ CYPD1104**/ CYPD1105**/CYPD1120**/CYPD1121**/ CYPD1122**/
CYPD1131**/ CYPD1132**/ CYPD1134**
USB Type-C Port Controller with Power Delivery
Cypress Division:
Cypress Semiconductor Corporation – Data Communication Division
Marketing Part #:
TECHNOLOGY/FAB PROCESS DESCRIPTION
5
Number of Metal
Layers:
Metal 1: 150A Ti/ 250 Ti/TiN / 3200Al-0.5%Cu / 500A Ti/TiN
Metal 2: 150A Ti/ 250 Ti/TiN / 3200Al-0.5%Cu / 500A Ti/TiN
Metal 3: 150A Ti/ 250 Ti/TiN / 7200Al-0.5%Cu / 500A Ti/TiN
Metal 4:150A Ti/ 250 Ti/TiN / 7200Al-0.5%Cu / 500A Ti/TiN
Metal 5: 150A Ti/ 250 Ti/TiN / 12000Al-0.5%Cu / 500A Ti/TiN
1KA NFUXOX / 6KA Nitride
Metal Composition:
Passivation Type and Thickness:
Generic Process Technology/Design Rule (-drawn): S8 / 0.13u
Gate Oxide Material/Thickness (MOS):
32Å / 110 Å SiO2
Name/Location of Die Fab (prime) Facility:
Cypress, Fab 25
Die Fab Line ID/Wafer Process ID:
Fab 25 / S8PF-10P
ALTERNATIVE FAB FACILITY SITE
FAB SITE
LOCATION
QTP NUMBER
Cypress CMI Fab4
Minnesota , USA
QTP# 151304
PACKAGE AVAILABILITY
ASSEMBLY FACILITY SITE
WIRE MATERIAL
QTP NUMBER
CML-RA
Au
QTP# 150801
UTL-Thailand
CuPd
QTP# 152303
40L QFN
CML-RA
CuPd
QTP# 151904
35-Ball WLCSP
DT-Philippines
-
QTP# 144402
FAB SITE
16L SOIC (150 mils)
Company Confidential
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Page 3 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
SZ161
16L SOIC (150 mils)
KE-G3000DA/Kyocera
Mold Compound Flammability Rating:
UL-94 V-0
Oxygen Rating Index: >28%
54%
Leadframe Designation
FMP
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation
Method/Metallization:
Backgrind
Die Separation Method:
Saw
Die Attach Supplier:
Henkel
Die Attach Material:
QMI 519
Bond Diagram Designation:
001-95720
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au/ 0.8 mil
Thermal Resistance Theta JA °C/W:
85°C/W
Package Cross Section Yes/No:
No
Assembly Process Flow:
11-21099
Name/Location of Assembly (prime) facility:
CML-RA
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-RA
Company Confidential
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Page 4 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
SZ161
16L SOIC (150 mils)
EME-G605/Sumitomo
Mold Compound Flammability Rating:
UL-94 V-0
Oxygen Rating Index: >28%
54%
Leadframe Designation
FMP
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu-Ag
Die Backside Preparation
Method/Metallization:
Backgrind
Die Separation Method:
Saw
Die Attach Supplier:
Henkel
Die Attach Material:
8200T
Bond Diagram Designation:
001-97694
Wire Bond Method:
Thermosonic
Wire Material/Size:
CuPd/ 0.8 mil
Thermal Resistance Theta JA °C/W:
85°C/W
Package Cross Section Yes/No:
No
Assembly Process Flow:
001-85398
Name/Location of Assembly (prime) facility:
UTL- Thailand (UT)
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-RA
Company Confidential
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Page 5 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
LQ40A
40L Quad Flat No Lead (6x6x0.6mm)
7470LA/Nitto
Mold Compound Flammability Rating:
UL-94 V-0
Oxygen Rating Index: >28%
54%
Leadframe Designation
FMP
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation
Method/Metallization:
Backgrind
Die Separation Method:
Saw
Die Attach Supplier:
Henkel
Die Attach Material:
QMI 519
Bond Diagram Designation:
001-72734
Wire Bond Method:
Thermosonic
Wire Material/Size:
CuPd/ 0.8 mil
Thermal Resistance Theta JA °C/W:
15.34°C/W
Package Cross Section Yes/No:
Yes
Assembly Process Flow:
11-21099
Name/Location of Assembly (prime) facility:
CML-RA
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-RA
Company Confidential
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Page 6 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
FN35A
35-Ball Wafer Level Chip Scale Package (WLCSP)
(3.23 x 2.10 x 0.55mm)
Die Backside Preparation Method:
Backgrind
Die Separation Method:
Saw
Solder Ball/Bump Material:
SAC405
Bonding Method:
Bump/ RDL
Bond Diagram Designation:
001-95722
Thermal Resistance Theta JA °C/W:
28°C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
001-69882
Name/Location of Assembly (prime) facility:
DT-Philippines
MSL Level
1
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
DT-Philippines
Company Confidential
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Page 7 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition (Temp/Bias)
Result
P/F
Acoustic Microscopy
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
P
Data Retention
150°C, No Bias
JESD22-A117 and JESD22-A103
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V/750V/1,000V/1,250V/1,500V/1,750V/2,000V
JESD22-C101
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
1,100V/2,200V /3,300V/4,000V/5,000V
JESD22, Method A114
P
Endurance Test
MIL-STD-883, Method 883-1033/ JESD22-A117
P
High Accelerated Saturation Test (HAST)
JEDEC STD 22-A110: 130°C, 85% RH, 5.5V
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
P
High Temperature Operating Life
Early Failure Rate
Dynamic Operating Condition, Vcc Max=2.07V, 150°C
JESD22-A-108
P
High Temperature Operating Life
Latent Failure Rate
Dynamic Operating Condition, Vcc Max=2.07V, 150°C
JESD22-A-108
P
Low Temperature Operating Life
Dynamic Operating Condition, -40°C
JESD22-A108
P
Pressure Cooker
JESD22-A102:121°C /100%RH, 15 PSIG
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
P
SEM Analysis
MIL-STD-883, Method 2018
P
Static Latch-up
Temperature Cycle
85C, +/-140mA, +/-200mA, +/- 300mA
125C, +/-140mA
JESD 78
MIL-STD-883, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
Company Confidential
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Page 8 of 15
P
P
Document No. 002-11632 Rev. *A
ECN #: 5178588
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure Rate
High Temperature Operating Life
Early Failure Rate
1,510 Devices
0
N/A
N/A
0 PPM 1
High Temperature Operating Life
Long Term Failure Rate
178,000
0
0.7
170
30 FIT 2
1.
2.
Early Failure Rate was computed from QTP# 161003.
Long Term Failure Rate was computed from QTP# 151008 and QTP# 161003.
1
2
3
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T2 T1  
where:
EA =The Activation Energy of the defect mechanism.
K = Boltzmann’s constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
Company Confidential
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Page 9 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
Reliability Test Data
QTP #: 151008
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
COMP
15
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
COMP
15
0
CY8C42452 (8CP44200)
611531543
CML-RA
COMP
15
0
4537464
STRESS: DATA RETENTION, PLASTIC, 150C
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
500
80
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
1000
80
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
500
80
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
1000
80
0
CY8C42452 (8CP44200)
611531543
CML-RA
500
80
0
4537464
STRESS: DATA RETENTION, PLASTIC, 175C
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
76
80
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
152
79
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
76
80
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
152
80
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
76
80
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
152
80
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.07V, Vcc Max)
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
48
1490
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
48
1510
0
CYTT214032 (8CP206101) 4545249
611537364
CML-RA
48
1547
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
168
78
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
500
78
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
168
80
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
500
80
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
168
80
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
500
80
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
500
9
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
750
3
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
1000
3
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
1250
3
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
1500
3
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
1750
3
0
Company Confidential
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Page 10 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
Reliability Test Data
QTP #: 151008
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-CHARGE DEVICE MODEL
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
500
9
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
750
3
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
1000
3
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
1250
3
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
1500
3
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
1750
3
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
500
9
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
750
3
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
1000
3
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
1250
3
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
1500
3
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
1750
3
0
STRESS: ESD-HUMAN BODY MODEL PER JESD22, METHOD A114
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
1100
3
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
2200
8
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
3300
3
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
4000
3
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
5000
3
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
1100
3
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
2200
8
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
3300
3
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
4000
3
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
1100
3
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
2200
8
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
3300
3
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
4000
3
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V), PRE COND 192 HR 30C/60%RH (MSL3)
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
96
30
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
96
30
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max)
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
80
116
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
500
116
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
80
120
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
500
120
0
Company Confidential
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Page 11 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
Reliability Test Data
QTP #: 151008
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: LOW TEMPERATURE OPERATING LIFE, -40C
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
160
40
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
380
40
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
168
75
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
168
78
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
168
80
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
288
80
0
STRESS: PRE/POST LFR PARAMETER ASSESSMENT
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
COMP
10+2
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
COMP
10+2
0
CY8C42452 (8CP44200)
611531543
CML-RA
COMP
10+2
0
4537464
STRESS: STATIC LATCH-UP (85C, 140mA)
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
COMP
6
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
COMP
6
0
CY8C42452 (8CP44200)
611531543
CML-RA
COMP
6
0
4537464
STRESS: STATIC LATCH-UP (85C, 200mA)
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
COMP
3
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
COMP
3
0
CY8C42452 (8CP44200)
611531543
CML-RA
COMP
3
0
4537464
STRESS: STATIC LATCH-UP (85C, 300mA)
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
COMP
3
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
COMP
3
0
CY8C42452 (8CP44200)
611531543
CML-RA
COMP
3
0
611534008
CML-RA
COMP
1
0
STRESS:
4537464
SEM CROSS SECTION
CYTT214032 (8CP206101) 4539372
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
500
80
0
CYTT214032 (8CP206101) 4539372
611534008
CML-RA
1000
80
0
CYTT214032 (8CP206101) 4540145
611534709
CML-RA
500
80
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
500
79
0
CY8C42452 (8CP44200)
4537464
611531543
CML-RA
1000
79
0
CML-RA
COMP
1
0
STRESS: THERMAL JUNCTION MEASUREMENT
CYTT214032 (8CP206101) 4539372
611534008
Company Confidential
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Page 12 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
Reliability Test Data
QTP #: 161003
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CYPD1103 (8F44100)
4537464
611531543
CML-R
COMP
15
0
CML-R
500
80
0
STRESS: DATA RETENTION, PLASTIC, 150C
CYPD1103 (8F44100)
4537464
611531543
STRESS: DATA RETENTION, PLASTIC, 175C
CYPD1103 (8F44100)
4537464
611531543
CML-R
76
80
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
152
80
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.07V, Vcc Max)
CYPD1103 (8F44100)
4537464
611531543
CML-R
48
1510
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
168
80
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
500
80
0
500
9
0
STRESS: ENDURANCE
STRESS: ESD-CHARGE DEVICE MODEL
CYPD1103 (8F44100)
4537464
611531543
CML-R
CYPD1103 (8F44100)
4537464
611531543
CML-R
750
3
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
1000
3
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
1250
3
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
1500
3
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
1750
3
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
2000
3
0
STRESS: ESD-HUMAN BODY MODEL PER JESD22, METHOD A114
CYPD1103 (8F44100)
4537464
611531543
CML-R
1100
3
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
2200
8
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
3300
3
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
4000
3
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max)
CYPD1103 (8F44100)
4537464
611531543
CML-R
80
120
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
500
120
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CYPD1103 (8F44100)
4537464
611531543
CML-R
168
80
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
288
80
0
CML-R
COMP
10+2
0
CML-R
COMP
6
0
CML-R
COMP
3
0
CML-R
COMP
3
0
STRESS: PRE/POST LFR PARAMETER ASSESSMENT
CYPD1103 (8F44100)
4537464
611531543
STRESS: STATIC LATCH-UP (85C, 140mA)
CYPD1103 (8F44100)
4537464
611531543
STRESS: STATIC LATCH-UP (85C, 200mA)
CYPD1103 (8F44100)
4537464
611531543
STRESS: STATIC LATCH-UP (125C, 140mA)
CYPD1103 (8F44100)
4537464
611531543
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
Reliability Test Data
QTP #: 161003
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: STATIC LATCH-UP (85C, 300mA)
CYPD1103 (8F44100)
4537464
611531543
CML-R
COMP
3
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CYPD1103 (8F44100)
4537464
611531543
CML-R
500
79
0
CYPD1103 (8F44100)
4537464
611531543
CML-R
1000
79
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 14 of 15
Document No. 002-11632 Rev. *A
ECN #: 5178588
Document History Page
Document Title: QTP# 161003: CCG1 DEVICE FAMILY S8PF-10R TECHNOLOGY, FAB 25
Document Number: 002-11632
Rev. ECN
No.
**
5170984
*A
5178588
Orig. of
Change
JYF
JYF
Description of Change
Initial spec release.
Deleted CYPD1106** and CYPD1136** in the MPN coverage.
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 15 of 15