Document No.001-88064 Rev. *A ECN #4431902 Cypress Semiconductor Product Qualification Report QTP#000504 VERSION*A July 2014 1 Meg Fast Asynchronous RAM R52D-5R Technology, Fab 4 CY7C1021B 64K x 16 Static RAM CY7C1019B 128K x 8 Static RAM FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 13 Document No.001-88064 Rev. *A ECN #4431902 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 000301 New Technology Derivative R52D-5R /New Product CY7C1049B 4Meg Async SRAM Apr 00 98462 New CY7C109B, 1Meg Asynchronous SRAM Product, R52D-5R Technology Derivative. Apr 00 000504 New Product CY7C1021B 1Meg Async SRAM, R52D-5R Technology Derivative Nov 00 Note: Based on using the same design rules and cells to establish a product family, as in JESD-47, Cypress qualifies devices within a product technology by using generic data from that product family to fill out the qualification requirements for those reliability stresses which test intrinsic reliability of the technology. Reliability stresses, such as ESD and Early Life, which are design sensitive, are routinely performed in qualifications to ensure the specific design is reliable. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 13 Document No.001-88064 Rev. *A ECN #4431902 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualifies CY7C1021B and CY7C1019B (metal option) in qualified R52D-5R Technology, Fab4. Marketing Part #: CY7C1021B and CY7C1019B Device Description: 5V Regulator, Commercial and Industrial offered in 32-lead SOJ and 44-lead TSOPII Package Cypress Division: Cypress Semiconductor Corporation – MPD Division Overall Die (or Mask) REV Level (pre-requisite for qualification): Rev. F What ID markings on Die: 7C1021F /CY7C1019F Number of Metal Layers: 2 TECHNOLOGY/FAB PROCESS DESCRIPTION - R52D-5R Metal Composition: Metal 1: 500Å TiW/6000Å Al-.5%Cu/300Å TiW Metal 2: 300Å CoTi/8000Å Al-.5%Cu/300Å TiW Passivation Type and Materials: 1000Å of TEOS + 9000Å SiN Free Phosphorus contents in top glass layer (%): 0% Number of Transistors in Device: 7 million Number of Gates in Device: 1.5 million Generic Process Technology/Design Rule (drawn): Gate Oxide Material/Thickness (MOS): CMOS, Double Metal /0.25 m Name/Location of Die Fab (prime) Facility: Cypress Semiconductor -- Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R52D-5R 55 Å PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 44-lead TSOP II JCET , CML-RA 32-lead SOJ JCET Note 1: Package Qualification details upon request Note 1: 1Meg Async CY7C1021B, R52D-5R (Regulator off) Technology. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 13 Document No.001-88064 Rev. *A ECN # 4431902 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: ZS444 44-lead Thin Small Outline Package (TSSOP II) Hitachi CEL 9200 V-O per UL94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Solder Plate, 85%Sn, 15%Pb Die Backside Preparation Method/Metallization: Die Separation Method: N/A Die Attach Supplier: Ablestik Die Attach Material: Ablestik 8361H Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0um Thermal Resistance Theta JA °C/W: 47°C/W Package Cross Section Yes/No: N/A Name/Location of Assembly (prime) facility: Cypress Philippines (CSPI-R) Wafer Saw ELECTRICAL TEST / FINISH DESCRIPTION Test Location: KYEC, CML-RA Fault Coverage: 100% Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 13 Document No.001-88064 Rev. *A ECN # 4431902 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life 1) Early Failure Rate Dynamic Operating Condition, Vcc = 3.8V, 150C 2) QTP #000504, QTP #98462 Result P/F P QTP #000301 Dynamic Operating Condition, Vcc = 5.75V 150C High Temperature Operating Life 1) Latent Failure Rate Dynamic Operating Condition, Vcc = 3.8V, 150C 2) QTP #98462 P QTP #000301 Dynamic Operating Condition, Vcc = 5.75V 150C High Temp. Steady State Life Test 1) High Accelerated Saturation Test (HAST) 1) Temperature Cycle 1) QTP #000301 P Static Operating Condition, Vcc = 5.5V 150C QTP #000301, QTP #98462 P 130C, 5.5V, 85%RH Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 220C+5, -0C QTP #000504, QTP #000301, QTP #98462 P MIL-STD-883C, Method 1010, Condition C, -65C to 150C Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 220C+5, -0C Pressure Cooker 1) QTP #000504, QTP #000301, QTP #98462 P No bias, 121C, 100%RH Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30C/60%RH+3IR-Reflow, 220C+5, -0C Electrostatic Discharge Human Body Model (ESD-HBM) 1) QTP #000504, QTP #000301, QTP #98462 P 2,200V MIL-STD-883, Method 3015.7 Electrostatic Discharge Charge Device Model (ESDCDM) 1) High Temperature Storage 1) QTP #000504, QTP #000301, QTP #98462 P 500V , JESD22-C101C QTP #000301 P 150C+/-5C no bias SEM X-Section 1) QTP #000301 MIL-STD 883 Method 2018-2 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 13 P Document No.001-88064 Rev. *A ECN #4431902 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS (continuation) Stress/Test Acoustic Microscopy Test Condition (Temp/Bias) 1) QTP #000301 Result P/F P J-STD-020 Current Density 1) QTP #000301 P Meets the Technology Device Level Reliability Specifications Low Temperature Operating Life 1) QTP #000301 P -30C,6.5V,8MHZ , JESD22-A108D Age Bond 1) Q T P #000301 200C, 4hrs, MIL-STD-883, Method 883-2011 P Latchup Sensitivity 1) P QTP #000504, QTP #000301, QTP #98462 125C, 12V, ±300mA In accordance with JEDEC 17. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 13 Document No.001-88064 Rev. *A ECN #4431902 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life Early Failure Rate1 High Temperature Operating Life2,3 Long Term Failure Rate 1 2 3 4 Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate4 8,409 1 N/A N/A 119 PPM 1,057,400 DHRs 0 0.7 170 5 FIT A production burn-in of 24 Hrs at 150C, 4.5V is required for the product. Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 5 EFR FIT Rate based on QTP 000504/98462 and 000301. LFR FIT Rate based on QTP 98462 and 000301 5 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 13 Document No.001-88064 Rev. *A ECN #4431902 Reliability Test Data QTP #: Device STRESS: Fab Lot # 4022475 CSPI-R 48H 3907 0 610022884 CSPI-R COMP 9 0 4022475 CSPI-R COMP 9 0 CSPI-R COMP 3 0 610022884 4022475 610022884 PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3 CY7C1021B-ZSC (7C1021F) STRESS: 610033884 STATIC LATCH-UP TESTING, 125C, 12V, +/- 300mA CY7C1021B-ZSC (7C1021F) STRESS: Rej Failure Mechanism ESD- HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C1021B-ZSC (7C1021F) STRESS: Duration Samp ESD- CHARGE DEVICE MODEL, 500V CY7C1021B- ZSC (7C1021F) 4022475 STRESS: Ass Loc HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RATE, 150C, 3.8V, VCC MAX CY7C1021B-ZSC (7C1021F) STRESS: Assy Lot # 000504 4022475 610033884 CSPI-R 168H 50 0 50 0 TC CONDITION C, -65C TO 150C, PRE COND. 192 HRS 30C/60% RH, MSL3 CY7C1021B-ZSC (7C1021F) 4017456 610039004 CSPI-R 300Cy Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 13 Document No.001-88064 Rev. *A ECN #4431902 Reliability Test Data QTP #: Device STRESS: Fab Lot # CSPI-R COMP 15 0 4943568 619936792 CSPI-R COMP 5 0 4943568 COMP 3 0 619936792 CSPI-R 4943568 619936792 CSPI-R 48 1502 0 4943568 619936792 CSPI-R COMP 3 0 4943568 619936792 CSPI-R COMP 8 0 HI-ACCEL SATURATION TEST, 130C, 85%RH, 5.5V, PRE COND 192 HR 30C/60%RHMSL3 7C1009MC-RVC STRESS: 619936792 ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C109B-VCB STRESS: 4943568 ESD-CHARGE DEVICE MODEL, 1,000V CY7C109B-VCB STRESS: Rej Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.8V, Vcc Max 7C1009MC-RVC STRESS: Samp DYNAMIC LATCH-UP TESTING, 8.5V, 300mA CY7C109B-VCB STRESS: Assy Loc Duration AGE STRENGHT CY7C109B-VCB STRESS: Assy Lot # ACOUSTIC-MSL3 7C1009MC-VC STRESS: 98462 4943568 619936792 CSPI-R 128 50 0 HIGH TEMPERATURE STORAGE, PLASTIC, 150C 7C1009MC-RVC 4943568 619936792 CSPI-R 500 50 0 7C1009MC-RVC 4943568 619936792 CSPI-R 1000 50 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 5.5V, Vcc MAX 7C1009MC-RVC 4943568 619936792 CSPI-R 80 80 0 7C1009MC-RVC 4943568 619936792 CSPI-R 168 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 13 Document No.001-88064 Rev. *A ECN #4431902 Reliability Test Data QTP #98462 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 3.8V, Vcc Max 7C1009MC-RVC 4943568 619936792 CSPI-R 80 529 0 7C1009MC-RVC 4943568 619936792 CSPI-R 500 529 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192 HR 30C/60%RH, MSL3 7C1009MC-RVC STRESS: 4943568 619936792 CSPI-R 168 51 0 TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH, MSL3 7C1009MC-RVC 4943568 619936792 CSPI-R 300 50 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 13 Document No.001-88064 Rev. *A ECN #4431902 Reliability Test Data QTP#000301 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanis ESD-CHARGE DEVICE MODE, (1,000V CY7C1049B 4919497 619925326 CSPI-R COMP 3 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 4,400V 0 CY7C1049B 4919497 619925326 CSPI-R COMP 3 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V), PRE COND 192 HR 30C/60%RH, MSL3 CY7C1049B STRESS: 4919497 619925326 4944781 610003706 HIGH TEMPERATURE STORAGE, 150C CSPI-R 128 47 0 CSPI-R 128 49 0 CY7C1049B 4919497 619925326 CSPI-R 336 48 0 CY7C1049B 4919497 619925326 CSPI-R 500 48 0 CY7C1049B 4919497 619925326 CSPI-R 1000 48 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 5.5V, Vcc MAX CY7C1049B 4919497 619925326 CSPI-R 80 80 0 CY7C1049B 4919497 619925326 CSPI-R 168 80 0 STRESS: LOW TEMPERATURE OPERATING LIFE, -30C, 6.50V CY7C1049B 4919497 619925326 CSPI-R 500 46 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192 HR 30C/60%RH, MSL3 CY7C1049B 4919497 619925326 CSPI-R 168 48 0 CY7C1049B 4920692 619933105 CSPI-R 168 47 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 13 Document No.001-88064 Rev. *A ECN #4431902 Reliability Test Data QTP#000301 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH, MSL3 CY7C1049B 4919497 619925326 CSPI-R 300 48 0 CY7C1049B 4919497 619925326 CSPI-R 500 48 0 CY7C1049B 4920692 619933105 CSPI-R 300 47 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 5.75V CY7C1049B-VC 4944781 610003706 CSPI-R 48 1000 1 CY7C1049B-VC 4946002 610004242 CSPI-R 48 1000 0 CY7C1049B-VC 4941240 619938804 CSPI-R 48 1000 0 1-Particle STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, 5.75V CY7C1049B-VC 4944781 610003706 CSPI-R 80 530 0 CY7C1049B-VC 4944781 610003706 CSPI-R 500 529 0 CY7C1049B-VC 4946002 610004242 CSPI-R 80 530 0 CY7C1049B-VC 4946002 610004242 CSPI-R 500 529 0 CY7C1049B-VC 4941240 619938804 CSPI-R 80 530 0 CY7C1049B-VC 4941240 619938804 CSPI-R 500 527 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 13 Document No.001-88064 Rev. *A ECN #4431902 Document History Page Document Title: QTP#000504: 1 Meg Fast Asynchronous RAM "CY7C1021B/1019B" R52D-5R Technology, Fab 4 Document Number: 001-88064 Rev. ECN Orig. of No. Change ** 4038942 HSTO *A 4431902 HSTO Description of Change Initial Spec Release Qualification report published on Cypress.com was transferred to qualification report spec template. Deleted Cypress obsolete referenced spec in Major package qualification details. Updated package availability based on current qualified test & Assembly site. Deleted Cypress reference Spec and replaced with Industry Standards in Reliability Test Performed Table. Align qualification report based on the new template in the front page Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 13