Document No. 001-92907 Rev. ** ECN #: 4407381 Cypress Semiconductor Product Qualification Report QTP # 134903 VERSION** June 2014 PSoC4A Device Family S8PF-10R Technology, Fab 4 CMI CY8C4124 CY8C4125 PROGRAMMABLE SYSTEM-ON-CHIP (PSOC(R)) CY8C4244 CY8C4245 PROGRAMMABLE SYSTEM-ON-CHIP (PSOC(R)) FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 PRODUCT QUALIFICATION HISTORY QTP Number 083401 113905 123502 134903 Description of Qualification Purpose Qualify SONOS S8DI-5R Technology in Fab 4 using PsoC 8C20066BC Krypton Device Qualify device 8C20400BC S8P12-10P Technology Fabricated at Fab4 (CMI) Qualification of PSoC4A Device 8C44200AC, S8PF-10R Technology in CMI (Fab 4) Qualification of PSoC4A Mask Changes, S8PF-10R Technology in CMI(Fab4) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 19 Date Jan 09 Jan 12 Apr 13 Jun 14 Document No. 001-92907 Rev. ** ECN #: 4407381 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: To qualify PSoC4A device 8C44200AC, S8PF-10R Technology in CMI (Fab 4) Marketing Part #: CY8C4124, CY8C4125, CY8C4244, CY8C4245 Device Description: 1.8V core, Commercial/ Industrial Programmable System on a Chip Cypress Division: Cypress Semiconductor – Programmable Systems Division TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 5 Metal Composition: Metal 1: 100A Ti / 3200A Al 0.5%Cu / 300A TiW Metal 2: 100A Ti/3,200A Al 0.5% Cu/350A TiW Metal 3: 150A Ti / 7200A Al 0.5%Cu / 350A TiW Metal 4: 150A Ti / 7200A Al 0.5%Cu / 350A TiW Metal 5: 300A Ti / 12000A Al 0.5%Cu / 300A TiW Passivation Type and Thickness: 1,000A NFUSOX /6,000A Nitride Generic Process Technology/Design Rule (-drawn): S8 / 0.13u SiO2 / 32A & SiO2 / 120A Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Fab 4, CMI-Minnesota Die Fab Line ID/Wafer Process ID: S8PF-10R Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 PACKAGE AVAILABILITY PACKAGE WIRE MATERIAL ASSEMBLY FACILITY SITE QTP NUMBER 44-Lead TQFP Cu ASE-G 123808 44-Lead TQFP CuPd CML-RA 133102 40-Lead QFN Cu ASE-G 130902 40-Lead QFN Cu CML-RA 123807 40-Lead QFN CuPd ASE-G 134515 40-Lead QFN CuPd CML-RA 141702 28-Lead SSOP CuPd JCET-JT 133002 28-Lead SSOP CuPd CML-RA 131804 Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: AZ44A Mold Compound Name/Manufacturer: TQFP 44L (10x10x1.4mm) KE-G3000 / Kyocera Chemicals Mold Compound Flammability Rating: UL-94: V-0 @ 0.8-3.2mm Oxygen Rating Index: 65% Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Thru Die Attach Supplier: Henkel / Hysol Die Attach Material: QMI509 Bond Diagram Designation: 001-87485 Wire Bond Method: Thermosonic Wire Material/Size: CuPd / 0.8 mil Thermal Resistance Theta JA °C/W: 62.95 °C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001−82703 Name/Location of Assembly (prime) facility: CML-RA MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: ASEKH (Taiwan), CML-RA (Philippines), JCET (China) Note: Please contact a Cypress Representative for other package availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate High Temperature Steady State life Low Temperature Operating Life Low Temperature Storage Life High Accelerated Saturation Test (HAST) Temperature Cycle Pressure Cooker Acoustic Microscopy Age Bond Strength Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc Max=2.1V/2.07V, 150°C JESD22-A-108 Dynamic Operating Condition, Vcc Max=2.1V/2.07, 150°C JESD22-A-108 150°C, 2.1V, Vcc Max JESD22-A-108 Dynamic Operating Condition, -30°C, 2.1V JESD22-A108 -40°C, No Bias JEDEC STD 22-A110: 130°C, 85% RH, 5.25V Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH, 260C Reflow) MIL-STD-883, Method 1010, Condition C, -65 °C to 150°C Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH, 260C Reflow) JESD22-A102:121°C /100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH, 260C Reflow) J-STD-020 Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30 C, 60% RH, 260C Reflow) 200C, 4hrs MIL-STD-883, Method 883-2011 Result P/F P P P P P P P P P P Ball Shear JESD22-B116 P Constructional Analysis Criteria: Meet external and internal characteristics of Cypress package P Current Density Meets the Technology Device Level Reliability Specifications P 150°C, No Bias JESD22-A117 and JESD22-A103 125°C, 8.5V JESD78 Data Retention Dynamic Latch-up P P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V / 3300V JESD22, Method A114 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V / 1000V/ 1250V JESD22-C101 P Electrostatic Discharge P Machine Model (ESD-MM) 200V, 220V, 275V, 330V JESD22-A115 Endurance Test MIL-STD-883, Method 883-1033/ JESD22-A117 P Static Latch-up 125C/85C, ± 140mA, JESD78 125C, +/- 200mA JESD 78 P SEM Analysis MIL-STD-883, Method 2018 P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 RELIABILITY FAILURE RATE SUMMARY Stress/Test Failure Rate Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 High Temperature Operating Life Early Failure Rate 1,500 Devices 0 N/A N/A 0 PPM High Temperature Operating Life Long Term Failure Rate 843,060 DHRs 0 0.7 170 6 FIT 1 2 3 1 2 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 1 2 Early Failure Rate was computed from QTPs 134903 Long Term Failure Rate was computed from QTPs 083401, 113905, 123502 & 134903 LFR Data. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 Reliability Test Data QTP #: 083401 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA COMP 15 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA COMP 15 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA COMP 15 0 STRESS: AGE BOND STRENGTH CY8C20566 (8C20566AC) 4827949 610844164 CML-R COMP 3 0 CY8C20466 (8C20466AC) 4804681 610822808 Malaysia-CA COMP 3 0 CY8C20666 (8C20666AC) 4836589 610852813 Malaysia-CA COMP 3 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 500 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 1000 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 500 78 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 1000 78 0 CY8C20566 (8C20566AC) 4836589 610851914 CML-R 500 78 0 CY8C20566 (8C20566AC) 4836589 610851914 CML-R 1000 78 0 CY8C20566 (8C20566AC) 4810486 610830786 CML-R 168 77 0 CY8C20566 (8C20566AC) 4815537 610835437 CML-R 168 77 0 CY8C20566 (8C20566AC) 4827949 610844164 CML-R 168 79 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 168 78 0 CY8C20566 (8C20566AC) 4836589 610851914 CML-R 168 76 0 STRESS: ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C20566 (8C20566AC) 4810486 610830371 CML-R 500 9 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 500 9 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 500 9 0 N/A N/A COMP 1 0 STRESS: SEM CROSS SECTION CY8C20066 (8C20066AC) 4810486 STRESS: STATIC LATCH-UP (85C, 8.25V) CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA COMP 6 0 CY8C20666 (8C20666AC) 4836589 610852813 Malaysia-CA COMP 6 0 CY8C20666 (8C20666AC) 4837410 410.23.02 Promex COMP 6 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 Reliability Test Data QTP #: 083401 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V) CY8C20566 (8C20566AC) 4810486 610830371 CML-R 2200 8 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 2200 8 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 2200 8 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (3,300V) CY8C20566 (8C20566AC) 4810486 610830371 CML-R 3300 3 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 3300 3 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 3300 3 0 STRESS: ESD-MACHINE MODEL, (200V) CY8C20236A (8C202662A) 4126494 611143319 KOREA-L 200 5 0 CY8C20236A (8C202662A) 4125077 611143627 PHIL-MB 200 5 0 STRESS: ESD-MACHINE MODEL, (220V) CY8C20566 (8C20566AC) 4810486 610830371 CML-R 220 6 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 220 6 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 220 6 0 STRESS: ESD-MACHINE MODEL, (275V) CY8C20566 (8C20566AC) 4810486 610830371 CML-R 275 3 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 275 3 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 275 3 0 STRESS: ESD-MACHINE MODEL, (330V) CY8C20566 (8C20566AC) 4810486 610830371 CML-R 330 3 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 330 3 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 330 3 0 STRESS: DYNAMIC LATCH-UP (125C, 8.5V) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA COMP 5 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA COMP 5 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA COMP 5 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 Reliability Test Data QTP #: 083401 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max) CY8C20566 (8C20566AC) 4827949 610844164 CML-R 48 1002 0 CY8C20566 (8C20566AC) 4815537 610835437 CML-R 48 1008 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 48 1004 1 CY8C20466 (8C20466AC) 4836589 610851747 Malaysia-CA 48 1004 0 STRESS: Read NV Latch (1) HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5V, Vcc Max) CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 48 45 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 48 45 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (125C, 5V, Vcc Max) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 96 45 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max) CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 80 390 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 500 390 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 80 390 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 500 390 0 CY8C20466 (8C20466AC) 4836589 610851747 Malaysia-CA 80 390 0 CY8C20466 (8C20466AC) 4836589 610851747 Malaysia-CA 500 390 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.1V) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 80 77 0 CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 168 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 80 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 168 77 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 80 77 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 168 77 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V CY8C20566 (8C20566AC) 4815537 610835437 CML-R 500 77 0 CY8C20566 (8C20566AC) 4835945 610848270 CML-R 500 77 0 (1) Destroyed during failure analysis Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 Reliability Test Data QTP #: 083401 Device Fab Lot # Assy Lot # Assy Lot Duration Samp Rej Failure Mechanism STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 128 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 128 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 256 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 128 77 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 168 77 0 CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 333 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 168 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 288 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 168 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 288 77 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 500 77 0 CY8C20466 (8C20466AC) 4810486 610828990 Malaysia-CA 1000 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 500 77 0 CY8C20466 (8C20466AC) 4815537 610834184 Malaysia-CA 1000 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 500 77 0 CY8C20466 (8C20466AC) 4835945 610847274 Malaysia-CA 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 Reliability Test Data ER114031 Device Fab Lot # Assy Lot # Assy Lot Duration Samp Rej Failure Mechanism STRESS: LOW TEMPERATURE STORAGE, -40C, No Bias CY8C20236A (8C202662A) 4137730 611155459 L-KOREA 1000 100 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 Reliability Test Data QTP #: 113905 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8CTMA443 (8C20401B) 4140358 611153802 CML-RA COMP 15 0 CY8CTMA443 (8C20401A) 4130520 611147744 G-TAIWAN COMP 15 0 CY8CTMA443 (8C20401A) 4129433 611148871 G-TAIWAN COMP 15 0 CY8CTMA443 (8C20401A) 4131142 611148867 G-TAIWAN COMP 15 0 CY8CTMA443 (8C20401A) 4130520 611147744 G-TAIWAN COMP 10 0 CY8CTMA443 (8C20401A) 4129433 611148871 G-TAIWAN COMP 10 0 CY8CTMA443 (8C20401A) 4131142 611148867 G-TAIWAN COMP 10 0 STRESS: BOND PULL STRESS: DATA RETENTION, 150C CY8CTMA443 (8C20401A) 4130520 611147744 G-TAIWAN 500 80 0 CY8CTMA443 (8C20401A) 4130520 611147744 G-TAIWAN 1000 80 0 4130520 611147744 G-TAIWAN COMP 15 0 4130520 611147744 G-TAIWAN 168 80 0 CML-RA COMP 9 0 3 0 8 0 STRESS: DYE PENETRANT TEST CY8CTMA443 (8C20401A) STRESS : ENDURANCE CY8CTMA443 (8C20401A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8CTMA443 (8C20401B) 4140358 611153802 STRESS: ESD-HUMAN BODY MODEL PER JESD22, METHOD A114-B, (1100V) CY8CTMA443 (8C20401B) 4140358 611153802 CML-RA COMP STRESS: ESD-HUMAN BODY MODEL PER JESD22, METHOD A114-B, (1600V) CY8CTMA443 (8C20401B) 4140358 611153801 CML-RA COMP STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.5V), PRE COND 192 HR 30C/60%RH (MSL3) CY8CTMA443 (8C20401A) 4130520 611147744 G-TAIWAN 128 80 0 CY8CTMA443 (8C20401A) 4129433 611148871 G-TAIWAN 128 78 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REG-ON (150C, 6.0V, Vcc Max) CY8CTMA443 (8C20401A) 4130520 611147745 G-TAIWAN 48 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 Reliability Test Data QTP #: 113905 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.07V, Vcc Max) CY8CTMA443 (8C20401B) 4140358 611153802 CML-RA 48 1492 0 CY8CTMA443 (8C20401B) 4140358 611153800 CML-RA 48 1074 2 ISB Deep Sleep, CAR#201201012 CY8CTMA443 (8C20401B) 4140358 611153800 CML-RA 48 418 1 ISB Deep Sleep, CAR#201201012 CY8CTMA443 (8C20401B) 4141585 611156224 G-TAIWAN 48 1500 0 CY8CTMA443 (8C20401A) 4129433 611148871 G-TAIWAN 48 1000 0 CY8CTMA443 (8C20401A) 4131142 611148870 G-TAIWAN 48 500 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max) CY8CTMA443 (8C20401A) 4129433 611148871 G-TAIWAN 80 116 0 CY8CTMA443 (8C20401A) 4129433 611148871 G-TAIWAN 500 116 0 4130520 611147744 G-TAIWAN COMP 5 0 STRESS: INTERNAL VISUAL CY8CTMA443 (8C20401A) STRESS: PRESSURE COOKER TEST (121C, 100%RH, 15 Psig), PRE COND 192 HR 30C/60%RH (MSL3) CY8CTMA443 (8C20401B) 4140358 611153802 CML-RA 168 77 0 CY8CTMA443 (8C20401B) 4140358 611153802 CML-RA 288 77 0 CY8CTMA443 (8C20401A) 4130520 611147744 G-TAIWAN 168 80 0 CY8CTMA443 (8C20401A) 4130520 611147744 G-TAIWAN 288 80 0 CY8CTMA443 (8C20401A) 4129433 611148871 G-TAIWAN 168 80 0 CY8CTMA443 (8C20401A) 4129433 611148871 G-TAIWAN 288 80 0 STRESS: TEMPERATURE CYCLE (COND. C, -65C TO 150C), PRE COND 192 HR 30C/60%RH (MSL3) CY8CTMA443 (8C20401B) 4140358 611153802 CML-RA 500 83 0 CY8CTMA443 (8C20401B) 4140358 611153802 CML-RA 1000 83 0 CY8CTMA443 (8C20401A) 4130520 611147744 G-TAIWAN 500 79 0 CY8CTMA443 (8C20401A) 4130520 611147744 G-TAIWAN 1000 79 0 CY8CTMA443 (8C20401A) 4129433 611148871 G-TAIWAN 500 80 0 CY8CTMA443 (8C20401A) 4129433 611148871 G-TAIWAN 1000 80 0 CY8CTMA443 (8C20401A) 4131142 611148867 G-TAIWAN 500 80 0 CY8CTMA443 (8C20401A) 4131142 611148867 G-TAIWAN 1000 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 Reliability Test Data QTP #: 113905 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: THERMAL SHOCK (COND. B, -55C TO 125C) CY8CTMA443 (8C20401A) 4130520 611147744 G-TAIWAN 200 80 0 G-TAIWAN COMP 2 0 COMP 6 0 STRESS: THERMAL JUNCTION MEASUREMENT CY8CTMA443 (8C20401A) 4130520 611147744 STRESS: STATIC LATCH-UP TESTING (125C, 8.25V, +/-140mA) CY8CTMA443 (8C20401B) 4140358 611153802 CML-RA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 15 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 Reliability Test Data QTP #: 123502 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: DATA RETENTION, PLASTIC, 150C CY8C4245 (8CC44200A) 4251883 611301729 TAIIWAN-G 500 70 0 CY8C4245 (8CC44200A) 4251883 611301729 TAIIWAN-G 1000 70 0 CY8C4245 (8CC44200A) 4251883 611302906 TAIWAN-G 168 80 0 CY8C4245 (8CC44200A) 4251883 611302906 TAIWAN-G 500 80 0 STRESS: ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C4245 (8CC44200A) 4251883 611302905 TAIWAN-G COMP 9 0 CY8C4245 (8CC44200A) 4251883 611303718 TAIWAN-G COMP 9 0 CY8C4245 (8CC44200A) 4251883 611302173 CML-RA COMP 9 0 STRESS: ESD-CHARGE DEVICE MODEL, (1000V) CY8C4245 (8CC44200A) 4251883 611302905 TAIWAN-G COMP 3 0 CY8C4245 (8CC44200A) 4251883 611303718 TAIWAN-G COMP 3 0 CY8C4245 (8CC44200A) 4251883 611302173 CML-RA COMP 3 0 STRESS: ESD-CHARGE DEVICE MODEL, (1250V) CY8C4245 (8CC44200A) 4251883 611302905 TAIWAN-G COMP 3 0 CY8C4245 (8CC44200A) 4251883 611303718 TAIWAN-G COMP 3 0 CY8C4245 (8CC44200A) 4251883 611302173 CML-RA 3 0 9 0 TAIWAN-G COMP 3 0 TAIWAN-G COMP 6 0 TAIWAN-G COMP 2 0 TAIWAN-G COMP 2 0 COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C4245 (8CC44200A) 4251883 611302905 TAIWAN-G COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (3,300V) CY8C4245 (8CC44200A) 4251883 611302905 STRESS: STATIC LATCH-UP (85C, 140mA) CY8C4245 (8CC44200A) 4251883 611302905 STRESS: STATIC LATCH-UP (85C, 180mA) CY8C4245 (8CC44200A) 4251883 611302905 STRESS: STATIC LATCH-UP (125C, 140mA) CY8C4245 (8CC44200A) 4251883 611302905 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 16 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 Reliability Test Data QTP #: 123502 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.07V, Vcc Max) CY8C4245 (8CC44200A) 4251883 611303750 TAIWAN-G 48 189 0 CY8C4245 (8CC44200A) 4251883 611302906 TAIWAN-G 48 1111 0 CY8C4245 (8CC44200A) 4251883 611307128N TAIWAN-G 48 1093 0 CY8C4245 (8CC44200A) 4251883 611308275 TAIWAN-G 48 1049 0 CY8C4245 (8CC44200A) 4251883 611308282 TAIWAN-G 48 1049 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 2.07V, Vcc Max) CY8C4245 (8CC44200A) 4251883 611302906 TAIWAN-G 48 39 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max) CY8C4245 (8CC44200A) 4251883 611302906 TAIWAN-G 80 151 0 CY8C4245 (8CC44200A) 4251883 611302906 TAIWAN-G 500 151 0 TAIWAN-G COMP 32 0 STRESS: PRE/POST LFR PARAMETER ASSESSMENT CY8C4245 (8CC44200A) 4251883 611303750 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY8C4245 (8CC44200A) 4251883 611301729 TAIIWAN-G 168 77 0 CY8C4245 (8CC44200A) 4251883 611301729 TAIIWAN-G 288 77 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8C4245 (8CC44200A) 4251883 611301729 TAIIWAN-G 500 77 0 CY8C4245 (8CC44200A) 4251883 611301729 TAIIWAN-G 1000 76 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 17 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 Reliability Test Data QTP #: 134903 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY8C4245AXI4 (8CP44200BC) 4405548 611415794 CML-RA COMP 15 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.07V, Vcc Max) CY8C4245AXI4 (8CP44200BC) STRESS: CML-RA 48 1500 0 4405548 611415794 CML-RA COMP 9 0 CML-RA COMP 3 0 CML-RA COMP 3 0 8 0 3 0 ESD-CHARGE DEVICE MODEL, (1000V) CY8C4245AXI4 (8CP44200BC) STRESS: 611415794 ESD-CHARGE DEVICE MODEL, (500V) CY8C4245AXI4 (8CP44200BC) STRESS: 4405548 4405548 611415794 ESD-CHARGE DEVICE MODEL, (1250V) CY8C4245AXI4 (8CP44200BC) 4405548 611415794 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C4245AXI4 (8CP44200BC) 4405548 611415794 CML-RA COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (3,300V) CY8C4245AXI4 (8CP44200BC) 4405548 611415794 CML-RA COMP STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.07V, Vcc Max) CY8C4245AXI4 (8CP44200BC) 4405548 611415794 CML-RA 80 120 0 CML-RA COMP 6 0 CML-RA COMP 3 0 CML-RA COMP 3 0 78 0 STRESS: STATIC LATCH-UP (+/-140mA 85C) CY8C4245AXI4 (8CP44200BC) 4405548 611415794 STRESS: STATIC LATCH-UP (+/-200mA 85C) CY8C4245AXI4 (8CP44200BC) 4405548 611415794 STRESS: STATIC LATCH-UP (+/-140mA 125C) CY8C4245AXI4 (8CP44200BC) 4405548 611415794 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8C4245AXI4 (8CP44200BC) 4405548 611415794 CML-RA 500 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 18 of 19 Document No. 001-92907 Rev. ** ECN #: 4407381 Document History Page Document Title: QTP#134903: PSOC4A DEVICE FAMILY CY8C4124/CY8C4125/CY8C4244/CY8C4245 S8PF10R TECHNOLOGY, FAB 4 CMI 001-92907 Document Number: Rev. ECN Orig. of No. Change ** 4407381 HSTO Description of Change Initial spec release Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 19 of 19