Document No. 001-81646 Rev. *C ECN #: 4900058 Cypress Semiconductor Product Qualification Report QTP # 090808 VERSION*C August 2015 enCoRe Device Family S8DI-5R Technology, Fab 4 CY7C64345 CY7C6431x CY7C6435x CY7C64315 CY7C64316 enCoRe (TM) V FULL SPEED USB CONTROLLER enCoRe (TM) V FULL SPEED USB MICROCONTROLLER DIE/WAFER FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda (JYF) Reliability Engineer Reviewed By: Rene Rodgers (RT) MTS Reliability Engineer Approved By: Don Darling (DCDA) Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 12 Document No. 001-81646 Rev. *C ECN #: 4900058 PRODUCT QUALIFICATION HISTORY QTP Number 083401 090808 091801 Description of Qualification Purpose Qualify SONOS S8DI-5R Technology in Fab 4 using PsoC 8C20066BC Krypton Device Qualify CY7C64345 Device on S8DI-5R Technology Qualify 2um Top Metal-3 Process on S8DI-5R Technology at CMI Using Krypton (8C20066EC) Rev. E1 (Note: For marketing part number with ‘A’) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 12 Date Jan 09 May 09 Sep 09 Document No. 001-81646 Rev. *C ECN #: 4900058 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: enCoRe V Device Qualification on S8 (S8DI-5R) Technology in Fab4 Marketing Part #: CY7C64345, CY7C6431x, CY7C6435x Device Description: Full Speed USB Microcontroller System Cypress Division: Cypress Semiconductor – Data Communication Division TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 3 Metal Composition: Metal 1: 100A Ti/3,200A Al 0.5% Cu/300A TiW Metal 2: 100A Ti/3,200A Al 0.5% Cu/300A TiW Metal 3: Pad: 500A Ti / 20000A Al 0.5% Cu Non Pad: 500A Ti / 20000A Al 0.5%Cu / 300 A TiW 4,000A TEOS /7,000A Si3N4 Passivation Type and Thickness: Generic Process Technology/Design Rule (-drawn): 1P3M, 0.15 um SiO2 / 110A & SiO2 / 32A Gate Oxide Material/Thickness (MOS): Name/Location of Die Fab (prime) Facility: Fab 4, CMI-Minnesota Die Fab Line ID/Wafer Process ID: S8DIN-5R PACKAGE AVAILABILITY ASSEMBLY FACILITY SITE PACKAGE 32 and 48-Lead QFN MALAYSIA-CA 16-Lead QFN AMKOR-MB Wafer Sales/ Die Sales N/A Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 12 Document No. 001-81646 Rev. *C ECN #: 4900058 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: LQ32 Mold Compound Flammability Rating: 32 Saw Quad Flat No Lead (QFN) EME-G770 / Sumitomo V-O per UL94 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Blade Sawing Die Attach Supplier: Henkel Die Attach Material: QMI509 Die Attach Method: Die Attach Epoxy Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0 mil Thermal Resistance Theta JA °C/W: 22.17 Package Cross Section Yes/No: N/A Name/Location of Assembly (prime) facility: Carsem-Malaysia MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other package availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 12 Document No. 001-81646 Rev. *C ECN #: 4900058 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate High Temperature Steady State life Low Temperature Operating Life High Accelerated Saturation Test (HAST) Temperature Cycle Pressure Cooker Acoustic Microscopy Age Bond Strength Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc Max=2.1V, 150°C JESD22-A108 Dynamic Operating Condition, Vcc Max=2.1V, 150°C JESD22-A108 Static Operating Condition, Vcc Max=2.1V, 150°C JESD22-A108 Dynamic Operating Condition, Vcc Max=2.1V, -30°C JESD22-A108 JEDEC STD 22-A110: 130°C, 5.25V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C MIL-STD-883, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C JESD22-A102: 121°C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C J-STD-020 Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C 200C, 4hrs MIL-STD-883, Method 883-2011 Result P/F P P P P P P P P P Ball Shear JESD22-B116 P Constructional Analysis Criteria: Meet external and internal characteristics of Cypress package P Current Density Meets the Technology Device Level Reliability Specifications P 150°C, No Bias JESD22-A117 and JESD22-A103 125C, 8.5V JESD 78 Data Retention Dynamic Latch-up P P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101 P Endurance Test MIL-STD-883, Method 883-1033 P Static Latch-up 125C, +/- 200mA JESD 78 P SEM Analysis MIL-STD-883, Method 2018 P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 12 Document No. 001-81646 Rev. *C ECN #: 4900058 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate High Temperature Operating Life Early Failure Rate 5,516 Devices 1 N/A N/A 181 PPM High Temperature Operating Life1,2 Long Term Failure Rate 585,000 DHRs 0 0.7 170 9 FIT 3 3 3 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. K = Boltzmann’s constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T 2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 12 Document No. 001-81646 Rev. *C ECN #: 4900058 Reliability Test Data QTP #: 090808 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL3 CY7C64345 4810486 610828990 Malaysia-CA COMP 15 0 CY7C64345 4815537 610834184 Malaysia-CA COMP 15 0 CY7C64345 4835945 610847274 Malaysia-CA COMP 15 0 STRESS: AGE BOND STRENGTH CY7C64345 4827949 610844164 CML-R COMP 3 0 CY7C64345 4804681 610822808 Malaysia-CA COMP 3 0 CY7C64345 4836589 610852813 Malaysia-CA COMP 3 0 STRESS: DATA RETENTION, PLASTIC, 150C CY7C64345 4815537 610834184 Malaysia-CA 500 77 0 CY7C64345 4815537 610834184 Malaysia-CA 1000 77 0 CY7C64345 4835945 610847274 Malaysia-CA 500 78 0 CY7C64345 4835945 610847274 Malaysia-CA 1000 78 0 CY7C64345 4836589 610851914 CML-R 500 78 0 CY7C64345 4836589 610851914 CML-R 1000 78 0 CY7C64345 4810486 610830786 CML-R 168 77 0 CY7C64345 4815537 610835437 CML-R 168 77 0 CY7C64345 4827949 610844164 CML-R 168 79 0 CY7C64345 4835945 610848270 CML-R 168 78 0 CY7C64345 4836589 610851914 CML-R 168 76 0 STRESS: ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY7C64345 4810486 610830371 CML-R 500 9 0 CY7C64345 4815537 610834184 Malaysia-CA 500 9 0 CY7C64345 4835945 610847274 Malaysia-CA 500 9 0 N/A N/A 1 0 STRESS: CY7C64345 SEM CROSS SECTION 4810486 COMP Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 12 Document No. 001-81646 Rev. *C ECN #: 4900058 Reliability Test Data QTP #: 090808 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP (85C, 8.25V) CY7C64345 4835945 610847274 Malaysia-CA COMP 6 0 CY7C64345 4836589 610852813 Malaysia-CA COMP 6 0 CY7C64345 4837410 410.23.02 Promex 6 0 COMP STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V) CY7C64345 4810486 610830371 CML-R 2200 8 0 CY7C64345 4815537 610834184 Malaysia-CA 2200 8 0 CY7C64345 4835945 610847274 Malaysia-CA 2200 8 0 STRESS: DYNAMIC LATCH-UP (125C, 8.5V) CY7C64345 4810486 610828990 Malaysia-CA COMP 5 0 CY7C64345 4815537 610834184 Malaysia-CA COMP 5 0 CY7C64345 4835945 610847274 Malaysia-CA COMP 5 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max) CY7C64345 4827949 610844164 CML-R 48 1002 0 CY7C64345 4815537 610835437 CML-R 48 1008 0 CY7C64345 4835945 610847274 Malaysia-CA 48 1004 1 CY7C64345 4836589 610851747 Malaysia-CA 48 1004 0 STRESS: Read NV Latch (1) HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5V, Vcc Max) CY7C64345 4815537 610834184 Malaysia-CA 48 45 0 CY7C64345 4835945 610848270 CML-R 45 0 48 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (125C, 5V, Vcc Max) CY7C64345 4810486 610828990 Malaysia-CA 96 45 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max) CY7C64345 4815537 610834184 Malaysia-CA 80 390 0 CY7C64345 4815537 610834184 Malaysia-CA 500 390 0 CY7C64345 4835945 610847274 Malaysia-CA 80 390 0 CY7C64345 4835945 610847274 Malaysia-CA 500 390 0 CY7C64345 4836589 610851747 Malaysia-CA 80 390 0 CY7C64345 4836589 610851747 Malaysia-CA 500 390 0 (1) Destroyed during failure analysis Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 12 Document No. 001-81646 Rev. *C ECN #: 4900058 Reliability Test Data QTP #: 090808 Device Fab Lot # Assy Lot # Assy Lot Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.1V) CY7C64345 4810486 610828990 Malaysia-CA 80 77 0 CY7C64345 4810486 610828990 Malaysia-CA 168 77 0 CY7C64345 4815537 610834184 Malaysia-CA 80 77 0 CY7C64345 4815537 610834184 Malaysia-CA 168 77 0 CY7C64345 4835945 610848270 CML-R 80 77 0 CY7C64345 4835945 610848270 CML-R 168 77 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V CY7C64345 4815537 610835437 CML-R 500 77 0 CY7C64345 4835945 610848270 CML-R 500 77 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3) CY7C64345 4810486 610828990 Malaysia-CA 128 77 0 CY7C64345 4815537 610834184 Malaysia-CA 128 77 0 CY7C64345 4815537 610834184 Malaysia-CA 256 77 0 CY7C64345 4835945 610847274 Malaysia-CA 128 77 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY7C64345 4810486 610828990 Malaysia-CA 168 77 0 CY7C64345 4810486 610828990 Malaysia-CA 333 77 0 CY7C64345 4815537 610834184 Malaysia-CA 168 77 0 CY7C64345 4815537 610834184 Malaysia-CA 288 77 0 CY7C64345 4835945 610847274 Malaysia-CA 168 77 0 CY7C64345 4835945 610847274 Malaysia-CA 288 77 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY7C64345 4810486 610828990 Malaysia-CA 500 77 0 CY7C64345 4810486 610828990 Malaysia-CA 1000 77 0 CY7C64345 4815537 610834184 Malaysia-CA 500 77 0 CY7C64345 4815537 610834184 Malaysia-CA 1000 77 0 CY7C64345 4835945 610847274 Malaysia-CA 500 77 0 CY7C64345 4835945 610847274 Malaysia-CA 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 12 Document No. 001-81646 Rev. *C ECN #: 4900058 Reliability Test Data QTP #: 091801 Device Fab Lot # Assy Lot # Assy Lot Duration Samp Rej Failure Mechanism STRESS: AGED BOND CY7C64345 4909973 610916428 Malaysia-CA COMP 3 0 CY7C64345 4909973 610921200 Malaysia-CA COMP 3 0 CY7C64345 4909973 610916429 Malaysia-CA COMP 10 0 CY7C64345 4909973 610921200 Malaysia-CA COMP 10 0 Malaysia-CA COMP 5 0 STRESS: BALL SHEAR STRESS: CONSTRUCTIONAL ANALYSIS CY7C64345 4909973 610916428 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max) CY7C64345 4909973 610916428 Malaysia-CA 48 748 0 CY7C64345 4909973 610921200 Malaysia-CA 48 750 0 STRESS: ESD-CHARGE DEVICE MODEL (500V) CY7C64345 4909973 610916427 Malaysia-CA COMP 9 0 CY7C64345 4909973 610921200 Malaysia-CA COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY7C64345 4909973 610916427 Malaysia-CA COMP 8 0 CY7C64345 4909973 610921200 Malaysia-CA COMP 8 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3) CY7C64345 4909973 610916428 Malaysia-CA 128 76 0 CY7C64345 4909973 610921200 Malaysia-CA 128 77 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY7C64345 4909973 610916428 Malaysia-CA 168 77 0 CY7C64345 4909973 610916428 Malaysia-CA 288 77 0 CY7C64345 4909973 610921199 Malaysia-CA 168 77 0 CY7C64345 4909973 610921199 Malaysia-CA 288 77 0 Malaysia-CA COMP 6 0 STRESS: STATIC LATCH-UP 85C, 5.25V, ±200mA) CY7C64345 4909973 610916427 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 12 Document No. 001-81646 Rev. *C ECN #: 4900058 Reliability Test Data QTP #: 091801 Device Fab Lot # Assy Lot # Assy Lot Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY7C64345 4909973 610916428 Malaysia-CA 500 77 0 CY7C64345 4909973 610916428 Malaysia-CA 1000 77 0 CY7C64345 4909973 610921199 Malaysia-CA 500 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 12 Document No. 001-81646 Rev. *C ECN #: 4900058 Document History Page Document Title: Document Number: QTP 090808: ENCORE DEVICE FAMILY, S8DI-5R TECHNOLOGY, FAB 4 001-81646 Rev. ECN Orig. of No. Change ** 3695017 NSR *A 4105599 JYF *B 4490321 JYF *C 4900058 JYF MEL Description of Change Initial Spec Release. Revision from the original qual report released in memo HGA-959: - Updated the QTP#090808 Version 2.0 to Version 3.0 - Added devices CY7C64315 and CY7C64316 in the title page. - Changed the contact Reliability Engineer to Rene Rodgers. - Changed the product division from CCD to DCD. - Added the wafer sales and die sales in package availability table. - Replaced the reference Cypress standards with the industry standards on the reliability tests performed table. - Added ball shear and constructional analysis on the reliability tests performed table. Sunset Spec Review: Deleted Version 3.0 in QTP title page; Updated Reliability Tests Performed Table: - Deleted “3IR” in reflow step of HAST, TCT, PCT and Acoustic - Deleted revisions of Jedec/Military standards. Revision changes from time to time Sunset Review: Updated QTP title page for template alignment. Sunset Review: Updated reference for Reliability Director;Updated Reliability Tests Performed table (HTSSL/LTOL/Ball Shear/Dynamic Latch Up) for template alignment;Deleted obsolete specs 001-11286/001-42703. Removed Distribution: WEB and Posting: None from the document history page Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 12