TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2(G) 1200V APT25GT120BRDQ2 APT25GT120BRDQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 4 7 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 50KHz • Low Tail Current • Ultra Low Leakage Current G C E C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT25GT120BRDQ2(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 54 I C2 Continuous Collector Current @ TC = 110°C 25 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 75 Switching Safe Operating Area @ TJ = 150°C 75A @ 1200V Total Power Dissipation Watts 347 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS MIN V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.5mA) 1200 VGE(TH) Gate Threshold Voltage 4.5 5.5 6.5 2.7 3.2 3.7 3.9 VCE(ON) I CES I GES (VCE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) TYP MAX 200 TBD 120 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units Volts µA nA Rev C 6-2008 Characteristic / Test Conditions 052-6269 Symbol DYNAMIC CHARACTERISTICS Symbol APT25GT120BRDQ2(G) Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) Turn-on Delay Time tr Current Rise Time td(off) Turn-off Delay Time tf Eon1 Capacitance 1650 VGE = 0V, VCE = 25V 250 f = 1 MHz 110 Gate Charge 10.0 VGE = 15V 170 VCE = 600V 20 100 I C = 25A I C = 25A Current Fall Time Turn-on Switching Energy Turn-off Switching Energy td(on) Turn-on Delay Time tr Current Rise Time RG = 5Ω 4 Eoff TJ = +25°C 5 6 VGE = 15V Turn-off Delay Time I C = 25A Current Fall Time Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy RG = 5Ω 44 55 TJ = +125°C 6 UNIT pF V nC A 14 27 150 36 930 1860 720 Inductive Switching (125°C) VCC = 800V Eon1 MAX TJ = 150°C, R G = 5Ω, VGE = 75 15V, L = 100µH,VCE = 1200V VGE = 15V Turn-on Switching Energy (Diode) tf TYP Inductive Switching (25°C) VCC = 800V Eon2 td(off) MIN Test Conditions Characteristic ns µJ 14 27 175 45 925 3265 965 TYP ns µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case (IGBT) .36 RθJC Junction to Case (DIODE) 5.9 .61 WT Package Weight MAX UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 052-6269 Rev C 6-2008 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES GE = 15V 15V 60 TJ = 25°C 50 TJ = 125°C 40 TJ = -55°C 30 20 10 0 FIGURE 1, Output Characteristics(TJ = 25°C) 80 50 40 30 TJ = 25°C TJ = 125°C 10 0 0 9V 8V 7V 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) I = 25A C T = 25°C J 14 VCE = 600V 10 VCE = 960V 8 6 4 2 0 20 40 60 80 100 120140160 180200 GATE CHARGE (nC) IC = 50A 5 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE 4 IC = 25A 3 IC = 12.5A 2 1 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 6 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature 6 5 IC = 50A 4 IC = 25A 3 IC = 12.5A 2 1 0 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 80 IC, DC COLLECTOR CURRENT(A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.05 VCE = 240V 12 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) 1.10 10V 20 FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 11V 40 FIGURE 2, Output Characteristics (TJ = 125°C) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) TJ = -55°C 60 20 12V 60 16 250µs PULSE TEST<0.5 % DUTY CYCLE 70 13V 80 0 0 2 4 6 8 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 70 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature Rev C 6-2008 V APT25GT120BRDQ2(G) 100 052-6269 80 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 25 20 VGE = 15V 15 10 VCE = 800V 5 T = 25°C, or 125°C J 0 APT25GT120BRDQ2(G) 200 30 RG = 5Ω L = 100µH 160 140 VGE =15V,TJ=125°C 120 VGE =15V,TJ=25°C 100 80 60 40 VCE = 800V 20 RG = 5Ω 0 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 180 L = 100µH 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 50 RG = 5Ω, L = 100µH, VCE = 800V RG = 5Ω, L = 100µH, VCE = 800V 45 60 tr, RISE TIME (ns) 40 30 TJ = 25 or 125°C,VGE = 15V 20 tf, FALL TIME (ns) 40 50 35 TJ = 125°C, VGE = 15V TJ = 25°C, VGE = 15V 30 25 20 15 10 10 EON2, TURN ON ENERGY LOSS (µJ) 10,000 G TJ = 125°C 6,000 4,000 2,000 TJ = 25°C 16,000 Eon2,50A J 14,000 12,000 10,000 8,000 6,000 Eon2,25A 2,000 0 Eoff,50A Eon2,12.5A Eoff,25A 0 Eoff,12.5A 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance TJ = 125°C 1500 1000 TJ = 25°C 500 9,000 V = 800V CE V = +15V GE T = 125°C 4,000 G 2000 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current SWITCHING ENERGY LOSSES (µJ) SWITCHING ENERGY LOSSES (µJ) 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 18,000 V = 800V CE V = +15V GE R = 5Ω 0 0 6-2008 Rev C 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2500 V = 800V CE V = +15V GE R = 5Ω 8,000 052-6269 0 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current EOFF, TURN OFF ENERGY LOSS (µJ) 5 0 8,000 V = 800V CE V = +15V GE R = 5Ω Eon2,50A G 7,000 6,000 5,000 4,000 3,000 Eon2,12.5A 1,000 0 Eoff,50A Eon2,25A 2,000 Eoff,12.5A 0 Eoff,25A 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 3,000 IC, COLLECTOR CURRENT (A) P C, CAPACITANCE ( F) 1,000 500 Coes 100 Cres 50 APT25GT120BRDQ2(G) 80 Cies 70 60 50 40 30 20 10 10 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.35 D = 0.9 0.30 0.7 0.25 0.20 0.5 Note: 0.15 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.40 0.3 0.10 t2 0.05 0 t1 t 0.1 0.05 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.0101 0.182 0.136 Case temperature. (°C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL Fmax = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 10 5 1 fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RθJC 5 10 15 20 25 30 35 40 45 50 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current Rev C 6-2008 0.178 Power (watts) 50 052-6269 RC MODEL Junction temp. (°C) FMAX, OPERATING FREQUENCY (kHz) 140 APT25GT120BRDQ2(G) APT40DQ120 Gate Voltage 10% TJ = 125°C td(on) IC V CC tr V CE Collector Current 5% D.U.T. Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions Figure21,InductiveSwitchingTestCircuit 90% Gate Voltage TJ = 125°C td(off) 90% Collector Voltage tf 0 Collector Current Switching Energy Rev C 6-2008 Figure 23, Turn-off Switching Waveforms and Definitions 052-6269 10% 5% Collector Voltage A 10% 90% TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. APT25GT120BRDQ2(G) UNIT Characteristic / Test Conditions IF(AV) IF(RMS) Maximum Average Forward Current (TC = 112°C, Duty Cycle = 0.5) 40 RMS Forward Current (Square wave, 50% duty) 63 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) IFSM Amps 210 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions VF MIN TYP IF = 25A 2.5 Forward Voltage IF = 50A 2.9 IF = 25A, TJ = 125°C 1.5 MIN TYP MAX UNIT Volts DYNAMIC CHARACTERISTICS Characteristic Symbol Test Conditions MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C F F R J - 26 trr Reverse Recovery Time - 350 Qrr Reverse Recovery Charge - 570 - 4 - 430 ns - 2200 nC - 9 - 210 ns - 3400 nC - 29 Amps IRRM IF = 40A, diF/dt = -200A/µs VR = 800V, TC = 25°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 40A, diF/dt = -200A/µs VR = 800V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 40A, diF/dt = -1000A/µs VR = 800V, TC = 125°C Maximum Reverse Recovery Current ns nC - - Amps Amps 0.60 0.9 0.50 0.7 0.40 0.20 0.3 0.10 0.1 0.05 t2 t 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (°C) Power (watts) 0.0442 0.00222 0.242 0.00586 0.324 0.0596 Case temperature (°C) FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL Rev C 6-2008 0 t1 052-6269 Note: 0.5 0.30 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.70 600 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) 100 80 TJ = 175°C 60 40 TJ = 25°C TJ = 125°C 20 0 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage IRRM, REVERSE RECOVERY CURRENT (A) 4500 T = 125°C J V = 800V R 4000 80A 3500 3000 40A 2500 2000 20A 1500 1000 500 400 40A 20A 300 200 100 trr trr 0.6 40A 15 10 20A 5 Duty cycle = 0.5 T = 175°C J 50 40 30 0.4 Qrr 20 10 0 0 75 100 125 150 175 Case Temperature (°C) Figure 30. Maximum Average Forward Current vs. CaseTemperature 200 150 100 50 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage CJ, JUNCTION CAPACITANCE (pF) 20 60 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 29. Dynamic Parameters vs. Junction Temperature 25 70 IRRM 0 80A R 80 0.8 0.0 30 T = 125°C J V = 800V 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 28. Reverse Recovery Current vs. Current Rate of Change Qrr 1.0 35 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 6-2008 80A 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 26. Reverse Recovery Time vs. Current Rate of Change 0.2 Rev C R 500 Qrr, REVERSE RECOVERY CHARGE (nC) 5000 1.2 052-6269 T = 125°C J V = 800V 0 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 27. Reverse Recovery Charge vs. Current Rate of Change APT25GT120BRDQ2(G) TJ = -55°C 120 25 50 TYPICAL PERFORMANCE CURVES APT25GT120BRDQ2(G) Vr diF /dt Adjust +18V APT10078BLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure32.DiodeTestCircuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure33,DiodeReverseRecoveryWaveformandDefinitions TO-247PackageOutline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) Collector (Cathode) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Collector (Cathode) Emitter (Anode) Rev C 6-2008 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 052-6269 5 1