V6205608 VID

REVISIONS
LTR
DESCRIPTION
DATE
APPROVED
A
Update boilerplate paragraphs to current
requirements. - PHN
11-11-29
Thomas M. Hess
B
Add device type 03. - phn
12-02-27
Thomas M. Hess
CURRENT DESIGN ACTIVITY CAGE CODE 16236
HAS CHANGED NAMES TO:
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
Prepared in accordance with ASME Y14.24
Vendor item drawing
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PMIC N/A
PREPARED BY
Phu H. Nguyen
Original date of drawing
CHECKED BY
TITLE
Phu H. Nguyen
YY MM DD
05-06-14
APPROVED BY
Thomas M. Hess
SIZE
CODE IDENT. NO.
A
REV
AMSC N/A
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO 43218-3990
MICROCIRCUIT, LINEAR, WIDE BAND, LOW
DISTORTION FULLY DIFFERENTIAL
AMPLIFIERS, MONOLITHIC SILICON
DWG NO.
V62/05608
16236
B
PAGE
1
OF
12
5962-V035-12
1. SCOPE
1.1 Scope. This drawing documents the general requirements of a high performance wide band, low distortion fully differential
amplifiers, with an operating temperature range of -55°C to +125°C for device type 01 and 02 and an operating temperature range of 55°C to +60°C for device type 03.
1.2 Vendor Item Drawing Administrative Control Number. The manufacturer’s PIN is the item of identification. The vendor item
drawing establishes an administrative control number for identifying the item on the engineering documentation:
V62/05608
-
Drawing
number
01
X
E
Device type
(See 1.2.1)
Case outline
(See 1.2.2)
Lead finish
(See 1.2.3)
1.2.1 Device type(s). 1/
Device type
01
02
03 2/
Generic
TA
THS4502-EP
THS4503-EP
THS4503-EP
Circuit function
-55°C to +125°C
-55°C to +125°C
-55°C to +60°C
Wideband, low distortion fully differential amplifiers
Wideband, low distortion fully differential amplifiers
Wideband, low distortion fully differential amplifiers
1.2.2 Case outline(s). The case outlines are as specified herein.
Outline letter
Number of pins
X
Y
8
8
JEDEC PUB 95
Package style
JEDEC MS-012
JEDEC M0-187
Plastic small outline package
Plastic small outline package
1.2.3 Lead finishes. The lead finishes are as specified below or other lead finishes as provided by the device manufacturer:
Finish designator
A
B
C
D
E
Z
1/
2/
Material
Hot solder dip
Tin-lead plate
Gold plate
Palladium
Gold flash palladium
Other
Users are cautioned to review the manufacturers data manual for additional user information relating to this device.
The device type 02 and 03 may have low level oscillation when the die temperature (also known as the junction temperature)
exceeds 60°C. These device are not recommended for new designs where the die temperature is expected to exceeds 60°C.
for more information, see manufacturer data on Maximum Die temperature to Oscillation.
DEFENSE SUPPLY CENTER, COLUMBUS
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PAGE
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1.3 Absolute maximum ratings. 3/
Supply voltage, (VS) .................................................................................................................
Input voltage, (VI): .....................................................................................................................
Output current, (IO) ...................................................................................................................
Differential input voltage, (VID) ..................................................................................................
Maximum junction temperature, (TJ) ........................................................................................
Maximum junction temperature, continuous operation, long term reliability, (TJ) .....................
Operating free air temperature range, (TA) (device type 01 and 02) .........................................
Operating free air temperature range, (TA) (device type 03) .....................................................
Storage temperature range, (TSTG) ...........................................................................................
Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds .............................................
ESD ratings:
HBM ..............................................................................................................................
CDM ..............................................................................................................................
MM ................................................................................................................................
Package dissipation ratings:
Package
Case X
Case Y 4/
θJC
(°C/W)
38.3
4.7
+16.5 V
±VS
150 mA 4/
+4.0 V
+150°C 5/
+125°C 6/
-55°C to +125°C
-55°C to +60°C
-65°C to +150°C
+300°C
+3000 V
+1500 V
+100 V
θJA 7/
(°C/W)
97.5
58.4
1.4 Recommended operating conditions.
Supply voltage:
Maximum dual supply ..............................................................................................................
Single supply ............................................................................................................................
Operating free air temperature range, (TA) (device type 01 and 02) ............................................
Operating free air temperature range, (TA) (device type 03) ........................................................
±7.5 V
+4.5 V to +15.0 V
-55°C to +125°C
-55°C to +60°C
2. APPLICABLE DOCUMENTS
JEDEC – SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC)
JEP95
–
Registered and Standard Outlines for Semiconductor Devices
(Copies of these documents are available online at http:/www.jedec.org or from JEDEC – Solid State Technology Association, 3103
North 10th Street, Suite 240–S, Arlington, VA 22201.)
3/
4/
5/
6/
7/
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods
may affect device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those specified is not implied.
The devices on this drawing may incorporate a thermal pad on the underside of the chip. This act as a heatsink and must be
connected to a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum
junction temperature which could permanently damage the device. Refer to the manufacturer for more information about utilizing
the thermally enhanced package.
The absolute maximum temperature under any condition is limited by the constraints of the silicon process.
Long term high temperature storage and/or extended used at maximum recommended operating conditions may result in a
reduction of overall device life. See figure 3 for additional information on thermal derating.
This data was taken using JEDEC standard high-K test PCB.
DEFENSE SUPPLY CENTER, COLUMBUS
COLUMBUS, OHIO
SIZE
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CODE IDENT NO.
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V62/05608
PAGE
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3. REQUIREMENTS
3.1 Marking. Parts shall be permanently and legibly marked with the manufacturer’s part number as shown in 6.3 herein and as
follows:
A.
B.
C.
Manufacturer’s name, CAGE code, or logo
Pin 1 identifier
ESDS identification (optional)
3.2 Unit container. The unit container shall be marked with the manufacturer’s part number and with items A and C (if applicable)
above.
3.3 Electrical characteristics. The maximum and recommended operating conditions and electrical performance characteristics are
as specified in 1.3, 1.4, and table I herein.
3.4 Design, construction, and physical dimension. The design, construction, and physical dimensions are as specified herein.
3.5 Diagrams.
3.5.1
Case outline(s). The case outline(s) shall be as shown in 1.2.2 and figure 1.
3.5.2
Terminal connections. The terminal connections shall be as shown in figure 2.
3.5.3
Wirebond life versus temperature. Wirebond life versus temperature shall be as shown in figure 3.
DEFENSE SUPPLY CENTER, COLUMBUS
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CODE IDENT NO.
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TABLE I. Electrical performance characteristics. 1/
Test
Test condition
VS = ±5.0 V, G = +1
Rf = Rg = 1 kΩ, RL = 399 Ω
Single ended input unless otherwise
noted
Device type: 2/
Limits
Typ
25°C
Unit
Min/
Typ/
Max
MHz
Typ
Over temperature 3/
25°C
-55°C to +125°C
OR
-55°C to +60°C
AC Performance
G = +1, PIN = -20 dBm, Rf = 392 Ω
370
G = +2, PIN = -30 dBm, Rf = 1 kΩ
175
G = +5, PIN = -30 dBm, Rf = 1.3 kΩ
70
G = +10, PIN = -30 dBm, Rf = 1.3 kΩ
30
Gain bandwidth product
G > +10
300
Bandwidth for 0.1 dB flatness
PIN = -20 dBm
150
Large signal bandwidth
VP = 2 V
220
Slew rate
4 VPP Step
2800
V/µs
Rise time
2 VPP Step
0.8
ns
Fall time
2 VPP Step
0.6
Setting time to 0.01%
VO = 4 VPP
8.3
Setting time to 0.1%
VO = 4 VPP
6.3
Harmonic distortion
G = +1, VO = 2 VPP
Small signal bandwidth
2
nd
harmonic
rd
3 harmonic
f = 8 MHz
-83
f = 30 MHz
-74
f = 8 MHz
-97
dBc
f = 30 MHz
-78
Third order intermodulation
distortion
VO = 2 VPP, fc = 30 MHz,
Rf = 392 Ω, 200 kHz tone spacing
-94
Third order output intercept
point
fc = 30 MHz, Rf = 392 Ω,
Referenced to 50 Ω,
52
dBm
Input voltage noise
f > 1 MHz
6.8
nV/ Hz
Input current noise
f > 100 kHz
1.7
pA/ Hz
Overdrive recovery time
Overdrive = 5.5 V
75
ns
DC performance
Open loop voltage gain
Input offset voltage
VOD = ±4 V, VOCM = 0 V
55
52
-1
±6
48
Average offset voltage drift
Input bias current
4
4.6
Average bias current drift
Input offset current
0.5
1
Average offset current drift
dB
Min
±7
mV
Max
±10
µV/°C
Typ
5.4
µA
Max
±10
nA/°C
Typ
2
µA
Max
±40
nA/°C
Typ
See notes at end of table.
DEFENSE SUPPLY CENTER, COLUMBUS
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CODE IDENT NO.
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PAGE
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TABLE I. Electrical performance characteristics – Continued.
Test
Input
Common mode input range
Common mode rejection ratio
Input impedance
Output
Differential output voltage swing
Test condition
VS = ±5.0 V, G = +1
Rf = Rg = 1 kΩ, RL = 399 Ω
Single ended input
unless otherwise noted
Device type: 2/
VICM = ±0.5 V, VOCM = 0 V
RL = 399 Ω
Differential output current drive
RL = 20 Ω
Output balance error
PIN = -20 dBm, f = 100 kHz
Closed loop output impedance
f = 1 MHz
(single ended)
Output Common Mode Voltage control
Small signal bandwidth
RL = 400 Ω
Slew rate
Minimum gain
Maximum gain
Common mode offset voltage
Input bias current
2 VPP step
Limits
Over temperature 3/
Unit
Min/
Typ/
Max
V
dB
Ω || pF
Min
Min
Typ
25°C
25°C
-55°C to +125°C
OR
-55°C to +60°C
±4.0
80
7
10 || 1
±3.7
74
±3.4
70
±8
±7.6
±7.4
V
Min
120
-58
0.1
110
100
mA
dB
Ω
Min
Typ
Typ
180
MHz
Typ
87
1
1
+2
100
V/µs
V/V
V/V
mV
Typ
Min
Max
Max
Max
0.98
1.02
±7.5
150
0.98
1.02
±9.9
170
±4
25 || 1
±3.7
±3.4
µA
V
VOCM left floating
VOCM left floating
0
0
0.05
-0.05
0.1
-0.1
kΩ || pF
V
V
Max
Min
VS+ = 4 V to 5 V, VS- = -5 V to -4 V
±5
23
23
80
±7.5
28
16
76
±7.5
34
10
70
V
mA
mA
dB
Max
Max
Min
Min
V
V
800
200
-2.9
-4.3
1000
240
Min
Max
Max
Max
VOCM = 2.5 V
Input voltage range
Input impedance
Maximum default voltage
Minimum default voltage
Power supply
Specified operating voltage
Maximum quiescent current
Minimum quiescent current
Power supply rejection (±PSRR)
Power down (device type 01 only)
Enable voltage threshold
Disable voltage threshold
Power down quiescent current
Input bias current
Typ
1/
Device enabled ON above -2.9 V
Device disabled OFF below -4.3 V
Input impedance
50 || 1
Turn on time delay
Turn off time delay
1000
800
1200
260
µA
µA
kΩ || pF
ns
ns
Min
Typ
Typ
Typ
Typ
See notes at end of table.
DEFENSE SUPPLY CENTER, COLUMBUS
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SIZE
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CODE IDENT NO.
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PAGE
6
TABLE I. Electrical performance characteristics.- Continued.
Test
Test condition
VS = 5.0 V, G = +1
Rf = Rg = 1 kΩ, RL = 399 Ω
Single ended input unless otherwise
noted
Device type: 2/
1/
Limits
Typ
Unit
Min/
Typ/
Max
MHz
Typ
Over temperature
25°C
25°C
-55°C to +125°C
OR
-55°C to +60°C
AC Performance
G = +1, PIN = -20 dBm, Rf = 392 Ω
320
G = +2, PIN = -30 dBm, Rf = 1 kΩ
160
G = +5, PIN = -30 dBm, Rf = 1.3 kΩ
60
G = +10, PIN = -30 dBm, Rf = 1.3 kΩ
30
Gain bandwidth product
G > +10
300
Bandwidth for 0.1 dB flatness
PIN = -20 dBm
180
Large signal bandwidth
VP = 1 V
200
Slew rate
2 VPP Step
1300
V/µs
Rise time
2 VPP Step
0.6
ns
Fall time
2 VPP Step
0.8
Setting time to 0.01%
VO = 2 V Step
13.1
Setting time to 0.1%
VO = 2 V Step
8.3
Harmonic distortion
VO = 2 VPP
Small signal bandwidth
2
nd
harmonic
rd
3 harmonic
f = 8 MHz
-81
f = 30 MHz
-60
f = 8 MHz
-74
dBc
f = 30 MHz
-62
Input voltage noise
f > 1 MHz
6.8
nV/ Hz
Input current noise
f > 100 kHz
1.6
pA/ Hz
Overdrive recovery time
Overdrive = 5.5 V
75
ns
DC performance
Open loop voltage gain
Input offset voltage
VOD = ±1 V, VOCM = 2.5 V
54
51
48
dB
Min
-0.6
±5
±6.5
mV
Max
±10
µV/°C
Typ
Average offset voltage drift
Input bias current
4
4.6
Average bias current drift
Input offset current
0.5
0.7
Average offset current drift
Input
Common mode input range
Common mode rejection ratio
Input impedance
VICM = 2.25 V to 2.75 V, VOCM = 2.5 V
1/4
80
7
10 || 1
1.3 / 3.7
74
5.2
µA
Max
±10
nA/°C
Typ
1.2
µA
Max
±20
nA/°C
Typ
1.6 / 3.4
60
V
dB
Min
Min
Typ
Ω || pF
See notes at end of table.
DEFENSE SUPPLY CENTER, COLUMBUS
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SIZE
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CODE IDENT NO.
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TABLE I. Electrical performance characteristics – Continued.
Test
Test condition
VS = 5.0 V, G = +1
Rf = Rg = 1 kΩ, RL = 399 Ω
Single ended input
unless otherwise noted
Device type: 2/
Limits
Over temperature
Typ
Output
Differential output voltage swing
RL = 399 Ω, Referenced to 2.5 V
Differential output current drive
RL = 20 Ω
Output balance error
PIN = -20 dBm, f = 100 kHz
Closed loop output impedance (single
f = 1 MHz
ended)
Output Common Mode Voltage control
Small signal bandwidth
RL = 400 Ω
1/
Unit
Min/
Typ/
Max
25°C
25°C
-55°C to +125°C
OR
-55°C to +60°C
±3.3
±2.8
±2.6
V
Min
100
-58
0.1
90
80
mA
dB
Ω
Min
Typ
Typ
180
MHz
Typ
80
1
1
2
1
1/4
25 || 1
0.98
1.02
±6.7
2
1.2/3.8
0.98
1.02
±9.2
3
1.3/3.7
V/µs
V/V
V/V
mV
Typ
Min
Max
Max
Max
Min
Typ
Slew rate
Minimum gain
Maximum gain
Common mode offset voltage
Input bias current
Input voltage range
Input impedance
2 VPP step
Maximum default voltage
Minimum default voltage
Power supply
Specified operating voltage
Maximum quiescent current
Minimum quiescent current
Power supply rejection (±PSRR)
Power down (device type 01 only)
Enable voltage threshold
Disable voltage threshold
Power down quiescent current
VOCM left floating
VOCM left floating
2.5
2.5
2.55
2.45
2.6
2.4
kΩ || pF
V
V
VS+ = 4.5 V to 5.5 V
5
20
20
75
15
25
15
72
15
31
8
66
V
mA
mA
dB
Max
Max
Min
Min
V
V
600
2.1
0.7
800
1200
µA
Min
Max
Max
125
140
µA
kΩ || pF
ns
ns
VOCM = 2.5 V
Device enabled ON above -2.1 V
Device disabled OFF below 0.7 V
Input bias current
Input impedance
100
50 || 1
Turn on time delay
Turn off time delay
1000
800
1/
2/
3/
µA
V
Max
Min
Max
Typ
Typ
Typ
Testing and other quality control techniques are used to the extent deemed necessary to assure product performance over the
specified temperature range. Product may not necessarily be tested across the full temperature range and all parameters may not
necessarily be tested. In the absence of specific parametric testing, product performance is assured by characterization and/or
design.
Device type 01 and 02 operate at TA = -55°C to +125°C and device type 03 operates at TA = -55°C to +60°C.
See maximum die temperature to prevent oscillation section in the Application Information from manufacturer data.
DEFENSE SUPPLY CENTER, COLUMBUS
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Case X
Symbol
A
A1
A2
b
c
Notes:
1.
2.
3.
Millimeters
Min
Max
1.75
0.10
0.25
0.25 Typ
0.31
0.51
0.17
0.25
Inches
Min
Max
.069
.007
.010
.010 Typ
.012
.020
.007
.010
Symbol
D
E
E1
e
L
Millimeters
Min
Max
4.80
5.00
3.80
4.00
5.80
6.20
1.27 Typ
0.40
1.27
Inches
Min
Max
.189
.197
.150
.157
.228
.244
.050 Typ
.016
.050
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion not to exceed 0.000 inches (0.15 mm).
Falls within JEDEC MS-012 variation AA.
FIGURE 1. Case outlines.
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Case Y
Symbol
A
A1
A2
b
c
Notes:
1.
2.
3.
4.
Millimeters
Min
Max
1.75
0.10
0.25
0.25 Typ
0.31
0.51
0.17
0.25
Inches
Min
Max
.069
.007
.010
.010 Typ
.012
.020
.007
.010
Symbol
D
E
E1
e
L
Millimeters
Min
Max
4.80
5.00
3.80
4.00
5.80
6.20
1.27 Typ
0.40
1.27
Inches
Min
Max
.189
.197
.150
.157
.228
.244
.050 Typ
.016
.050
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusion.
This package is designed to be soldered to a thermal pad on the board. Refer to manufacturer literature fo information
regarding recommended board layout.
Falls within JEDEC MO-187.
FIGURE 1. Case outline - Continued.
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FIGURE 2. Terminal connections.
FIGURE 3. Wirebond life versus temperature.
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4. VERIFICATION
4.1 Product assurance requirements. The manufacturer is responsible for performing all inspection and test requirements as
indicated in their internal documentation. Such procedures should include proper handling of electrostatic sensitive devices,
classification, packaging, and labeling of moisture sensitive devices, as applicable.
5. PREPARATION FOR DELIVERY
5.1 Packaging. Preservation, packaging, labeling, and marking shall be in accordance with the manufacturer’s standard commercial
practices for electrostatic discharge sensitive devices.
6. NOTES
6.1 ESDS. Devices are electrostatic discharge sensitive and are classified as ESDS class 1 minimum.
6.2 Configuration control. The data contained herein is based on the salient characteristics of the device manufacturer’s data book.
The device manufacturer reserves the right to make changes without notice. This drawing will be modified as changes are provided.
6.3 Suggested source(s) of supply. Identification of the suggested source(s) of supply herein is not to be construed as a guarantee
of present or continued availability as a source of supply for the item.
1/
2/
3/
Vendor item drawing administrative
control number 1/
Device manufacturer
CAGE code
Vendor part number
V62/05608-01XE
01295
2/
V62/05608-02XE
01295
2/
V62/05608-01YE
01295
2/
V62/05608-02YE
01295
2/
V62/05608-03YE
01295
THS4503MDGNREP 3/
Symbol
BLB
The vendor item drawing establishes an administrative control number for identifying the item on
the engineering documentation.
Not yet available from a source of supplied.
The package is available taped and reel. The R suffix standard quality is 2500.
CAGE code
01295
DEFENSE SUPPLY CENTER, COLUMBUS
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Source of supply
Texas Instruments, Inc.
Semiconductor Group
8505 Forest Lane
P.O. Box 660199
Dallas, TX 75243
Point of contact: U.S. Highway 75 South
P.O. Box 84, M/S 853
Sherman, TX 75090-9493
SIZE
A
CODE IDENT NO.
16236
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DWG NO.
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