Cypress Semiconductor Product Qualification Report QTP# 99443 VERSION 4.0 August 2006 USB3 Device Family P26 Technology, Fab2 - Magnachip CY7C64013 Full-Speed USB (12-Mbps) Function CY7C64113 CY7C65113 USB Hub with Microcontroller CY7C66013 CY7C66113 Full-Speed USB (12 Mbps) Peripheral Controller with Integrated Hub CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Fredrick Whitwer Principal Reliability Engineer (408) 943-2722 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Cypress Semiconductor USB3 Device Family, P26 Technology, Fab2-Magnachip Device: CY7C64x13/CY7C65x13/7C66x13 QTP # 99443 V, 4.0 Page 2 of 13 August 2006 QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 99443 P26 Transfer from CTI to Magnachip, Technology Qual Apr 00 053801 Qualify 7C66021AU USB3 Device at Magnachip on P26 Technology Oct 05 054604 Verify Qualification of P26 Technology at Magnachip Feb 06 Cypress Semiconductor USB3 Device Family, P26 Technology, Fab2-Magnachip Device: CY7C64x13/CY7C65x13/7C66x13 QTP # 99443 V, 4.0 Page 3 of 13 August 2006 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify 7C66021AU USB3 Device Family at Magnachip using P26 Technology Marketing Part #: CY7C64013, CY7C64113, CY7C65113, CY7C66013, CY7C66113 Device Description: Full Speed USB (12Mbps) Peripheral Controller with Integrated Hub Cypress Division: Cypress Semiconductor Corporation –Consumer and Computation Division (CCD) Overall Die (or Mask) REV Level (pre-requisite for qualification): Rev. G What ID markings on Die: 7C6602A TECHNOLOGY/FAB PROCESS DESCRIPTION - P26 Number of Metal Layers: 2 Metal Composition: Metal 1: 1500Å TiW / 4000Å Al / 750Å TiW Metal 2: 1500Å TiW / 8000Å Al / 750Å TiW Passivation Type and Materials: Oxynitride Generic Process Technology/Design Rule (µ-drawn): CMOS, Double Metal/0.65µm Gate Oxide Material/Thickness (MOS): SiO2, 165Å Name/Location of Die Fab (prime) Facility: Magnachip/Cheong-Ju-Korea Die Fab Line ID/Wafer Process ID: Fab2/P26 PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 28-Lead SOIC CML-R, INDNS-O, MMT-X 48/56-Lead SSOP CML-R 28-Pin PDIP INDNS-O 48-Pin PDIP INDNS-O, MMT-X 56-QFN CML-RA, OSE-T, SEOL-L Cypress Semiconductor USB3 Device Family, P26 Technology, Fab2-Magnachip Device: CY7C64x13/CY7C65x13/7C66x13 QTP # 99443 V, 4.0 Page 4 of 13 August 2006 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: SZ28 28-Lead 300mil SOIC Package NittoMP8500 V-0 Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu (Ni: 20~80uinch, Pd: 0.8~1.2uinch, Au: 0.12~0.5uinch) Die Backside Preparation Method/Metallization: Grinding Die Separation Method: Blade Sawing Die Attach Supplier: Dexter Die Attach Material: QMI 509 Die Attach Method: Dispensing Bond Diagram Designation: 10-06322 Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0 mil Thermal Resistance Theta JA °C/W: 67.6°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 11-20049 Name/Location of Assembly (prime) facility: Cypress Philippines (CML-R) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Fault Coverage: 100% Cypress Semiconductor USB3 Device Family, P26 Technology, Fab2-Magnachip Device: CY7C64x13/CY7C65x13/7C66x13 QTP # 99443 V, 4.0 Page 5 of 13 August 2006 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F Dynamic Operating Condition, Vcc Max = 5.75V, 150°C P Dynamic Operating Condition, Vcc Max = 5.75V, 150°C P High Temperature Steady State Life Static Operating Condition, Vcc Max = 5.75V, 150°C P Long Life Verification Dynamic Operating Condition, Vcc Max = 5.75V, 150°C P Low Temperature Operating Life -30C, 6.5V, 8MHZ P High Accelerated Saturation Test (HAST) 130°C, 5.5V, 85%RH Precondition: JESD22 Moisture Sensitivity MSL 1 168 Hrs, 85C/85%RH+3IR-Reflow, 220°C+0, -5°C P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL 1 P High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate Pressure Cooker 168 Hrs, 85C/85%RH+3IR-Reflow, 220°C+0, -5°C 121°C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity MSL 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 220°C+0, -5°C Aged Bond Strength MIL-STD-883, Method 2011 P Bond Pull Cypress Spec. 12-00292 P Data Retention (Hermetic) 250C, non-biased P Data Retention (Plastic) 150C/165C, non-biased P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V Cypress Spec. 25-00020 P Acoustic Microscopy Cypress Spec. 25-00104 P Dynamic Latch-up 125C, 8.5V P Static Latch-up 125C, ± 200mA/± 300mA P Cypress Spec. 01-00081 Cypress Semiconductor USB3 Device Family, P26 Technology, Fab2-Magnachip Device: CY7C64x13/CY7C65x13/7C66x13 QTP # 99443 V, 4.0 Page 6 of 13 August 2006 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 Failure Rate High Temperature Operating Life Early Failure Rate 4,197 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1,2 Long Term Failure Rate 446,980 DHRs 0 0 .7 170 12 FITs 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Cypress Semiconductor USB3 Device Family, P26 Technology, Fab2-Magnachip Device: CY7C64x13/CY7C65x13/7C66x13 QTP # 99443 V, 4.0 Page 7 of 13 August 2006 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 99443 Assy Loc Duration Samp Rej Failure Mechanism ACOUSTIC, MSL1 CY7C64113-PVC 2948678 619938213 CSPI-R COMP 15 0 CY7C64113-PVC 2001294 610002661 CSPI-R COMP 15 0 CY7C64113-PVC 2004702 610004994 CSPI-R COMP 15 0 INDNS-O COMP 5 0 STRESS: BOND PULL CY7C65113-SC STRESS: 2948678 519919718 DATA RETENTION, HERMETIC, 250C CY7C66113-PVC 2001294 610002660 CSPI-R 96 78 0 CY7C66113-PVC 2001294 610002660 CSPI-R 168 78 0 CY7C64013-*DC 2004702 USA-C 96 78 0 CY7C64013-*DC 2004702 USA-C 168 78 0 CY7C64013-*DC 2004741 USA-C 96 78 0 STRESS: DATA RETENTION, PLASTIC, 150C CY7C64113-PVC 2948678 619938213 CSPI-R 500 82 0 CY7C64113-PVC 2948678 619938213 CSPI-R 1000 82 0 CY7C64113-PVC 2001294 610002661 CSPI-R 500 82 0 CY7C64113-PVC 2001294 610002661 CSPI-R 1000 82 0 STRESS: DATA RETENTION, PLASTIC, 165C CY7C64113-PVC 2004702 610004994 CSPI-R 168 83 0 CY7C64113-PVC 2004702 610004994 CSPI-R 552 83 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V, Vcc Max) CY7C65113-SC 2001294 510000813 INDNS-O 48 351 0 CY7C65113-SC 2004702 510001508 INDNS-O 48 378 0 CY7C65113-SC 2948678 519919718 INDNS-O 48 348 0 STRESS: LONG LIFE VERIFICATION, 150C, 5.75V CY7C65113-SC 2948678 519919718 INDNS-O 1000 120 0 CY7C65113-SC 2948678 519919718 INDNS-O 2000 120 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 6. 5V, 8MHZ) CY7C64113-PVC 2948678 619938213 CSPI-R 500 48 0 CY7C64113-PVC 2948678 619938213 CSPI-R 1000 47 0 Cypress Semiconductor USB3 Device Family, P26 Technology, Fab2-Magnachip Device: CY7C64x13/CY7C65x13/7C66x13 QTP # 99443 V, 4.0 Page 8 of 13 August 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 99443 Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V, Vcc Max) CY7C65113-SC 2001294 510000813 INDNS-O 80 351 0 CY7C65113-SC 2001294 510000813 INDNS-O 500 120 0 CY7C65113-SC 2004702 510001508 INDNS-O 80 120 0 CY7C65113-SC 2004702 510001508 INDNS-O 500 120 0 CY7C64113-PVC 2004702 610004994 CSPI-R 80 120 0 CY7C64113-PVC 2004702 610004994 CSPI-R 500 120 0 CY7C65113-SC 2948678 519919718 INDNS-O 80 120 0 CY7C65113-SC 2948678 519919718 INDNS-O 500 120 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.75V), PRE COND 168 HRS 85C/85%RH, MSL1 CY7C66113-PVC 2001294 610002660 CSPI-R 128 50 0 CY7C64113-PVC 2004702 610004994 CSPI-R 128 45 0 CY7C64113-PVC 2948678 619938213 CSPI-R 128 50 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HRS 85C/85%RH, MSL1 CY7C65113-SC 2001294 510000813 INDNS-O 168 50 0 CY7C64113-PVC 2001294 610002661 CSPI-R 168 50 0 CY7C64113-PVC 2004702 610004994 CSPI-R 168 49 0 CY7C66113-PVC 2948678 619938214 CSPI-R 168 50 0 STRESS: ESD-CHARGE DEVICE MODEL (1,000V) CY7C66113-PVC 2001294 610002660 CSPI-R COMP 3 0 CY7C64113-PVC 2004702 610004994 CSPI-R COMP 3 0 CY7C65013-PVC 2948678 619938212 CSPI-R COMP 3 0 CY7C64113-PVC 2948678 619938213 CSPI-R COMP 3 0 CY7C66113-PVC 2948678 619938214 CSPI-R COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015 (2,200V) CY7C66113-PVC 2001294 610002660 CSPI-R COMP 3 0 CY7C64113-PVC 2004702 610004994 CSPI-R COMP 3 0 CY7C65013-PVC 2948678 619938212 CSPI-R COMP 3 0 CY7C64113-PVC 2948678 619938213 CSPI-R COMP 3 0 CY7C66113-PVC 2948678 619938214 CSPI-R COMP 4 0 Cypress Semiconductor USB3 Device Family, P26 Technology, Fab2-Magnachip Device: CY7C64x13/CY7C65x13/7C66x13 QTP # 99443 V, 4.0 Page 9 of 13 August 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 99443 Assy Loc Duration Samp Rej STRESS: STATIC LATCH-UP TESTING (125C, 10V, +/-300mA) CY7C64113-PVC 2948678 619938213 CSPI-R COMP 3 0 STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH, MSL1 CY7C65113-SC 2001294 510000813 INDNS-O 300 49 0 CY7C65113-SC 2001294 510000813 INDNS-O 500 49 0 CY7C64113-PVC 2001294 610002661 CSPI-R 300 49 0 CY7C64113-PVC 2001294 610002661 CSPI-R 500 49 0 CY7C64113-PVC 2001294 610002661 CSPI-R 1000 48 0 CY7C64113-PVC 2004702 610004994 CSPI-R 300 48 0 CY7C64113-PVC 2004702 610004994 CSPI-R 500 48 0 CY7C64113-PVC 2004702 610004994 CSPI-R 1000 48 0 CY7C64113-PVC 2948678 619938213 CSPI-R 300 50 0 CY7C64113-PVC 2948678 619938213 CSPI-R 500 50 0 CY7C64113-PVC 2948678 619938213 CSPI-R 1000 48 0 Note: PV is an index of Cypress Module Package. Failure Mechanism Cypress Semiconductor USB3 Device Family, P26 Technology, Fab2-Magnachip Device: CY7C64x13/CY7C65x13/7C66x13 QTP # 99443 V, 4.0 Page 10 of 13 August 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 053801 Duration Samp Rej STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY7C64013 (7C64013G) 2535026 610539904 CML-R COMP 9 0 9 0 COMP 3 0 COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY7C64013 (7C64013G) 2535026 610539904 CML-R COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY7C64013 (7C64013G) 2535026 610539904 CML-R STRESS: STATIC LATCH-UP TESTING (125C, 10V, +/-300mA) CY7C64013 (7C64013G) 2535026 610539904 CML-R Failure Mechanism Cypress Semiconductor USB3 Device Family, P26 Technology, Fab2-Magnachip Device: CY7C64x13/CY7C65x13/7C66x13 QTP # 99443 V, 4.0 Page 11 of 13 August 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot# 054604 Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC-MSL3 CY7C64013C (7C640131GU) 2535026 610539904 CML-R COMP 15 0 CY7C65113C (7C651131GU) 2543258 610550662 CML-R COMP 15 0 STRESS: AGE BOND STRENGTH CY7C65113C (7C651131GU) 2543258 610550662 CML-R COMP 10 0 CY7C64013C (7C640131GU) 2535026 610539904 CML-R COMP 10 0 STRESS: DATA RETENTION, 150C, no bias CY7C65113C (7C651131GU) 2543258 610550662 CML-R 500 80 0 CY7C65113C (7C651131GU) 2543258 610550662 CML-R 1000 80 0 CY7C64013C (7C640131GU) 2535026 610539904 CML-R 500 80 0 CY7C64013C (7C640131GU) 2535026 610539904 CML-R 1000 80 0 CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O 500 80 0 CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O 1000 80 0 STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY7C64013C (7C640131GU) 2535026 610539904 CML-R COMP 9 0 CY7C65113C (7C651131GU) 2543258 610550662 CML-R COMP 9 0 CY7C63413C (7C634131CU) 2544313 INDNS-O COMP 9 0 510505323 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY7C64013C (7C640131GU) 2535026 610539904 CML-R COMP 9 0 CY7C65113C (7C651131GU) 2543258 610550662 CML-R COMP 9 0 CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O COMP 9 1 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7C64013C (7C640131GU) 2535026 610539904 CML-R COMP 3 0 CY7C65113C (7C651131GU) 2543258 610550662 CML-R COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY7C64013C (7C640131GU) 2535026 610539904 CML-R COMP 3 0 CY7C65113C (7C651131GU) 2543258 610550662 CML-R COMP 3 0 CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O 3 0 COMP Contact Damage Cypress Semiconductor USB3 Device Family, P26 Technology, Fab2-Magnachip Device: CY7C64x13/CY7C65x13/7C66x13 QTP # 99443 V, 4.0 Page 12 of 13 August 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot# 054604 Assy Loc Duration CML-R COMP Samp Rej Failure Mechanism STRESS: DYNAMIC LATCH-UP, 8.5V CY7C65113C (7C651131GU) 2543258 610550662 3 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.75V), PRE COND 192 HRS 30C/60%RH, MSL3 CY7C64013C (7C640131GU) 2535026 610539904 CML-R 128 50 0 CY7C65113C (7C651131GU) 2543258 610550662 CML-R 128 49 0 128 48 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.75V) CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 5.75V), Vcc Max) CY7C65113C (7C651131GU) 2544369 610552933 CML-R 48 816 0 CY7C65113C (7C651131GU) 2544348 610552934 CML-R 48 1006 0 CY7C65113C (7C651131GU) 2543258 610550662 CML-R 48 1224 0 CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O 48 1151 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 5.75V), Vcc Max) CY7C65113C (7C651131GU) 2544369 610552933 CML-R 80 130 0 CY7C65113C (7C651131GU) 2544369 610552933 CML-R 500 130 0 CY7C65113C (7C651131GU) 2543258 610550662 CML-R 80 130 0 CY7C65113C (7C651131GU) 2543258 610550662 CML-R 500 130 0 CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O 80 117 0 CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O 500 117 0 STRESS: LONG LIFE VERIFICATION- (150C, 5.75V, Vcc Max) CY7C65113C (7C651131GU) 2543258 610550662 CML-R 1000 130 0 STRESS: HIGH TEMPERATURE STEADY STATE LIFE- (150C, 5.75V, Vcc Max) CY7C65113C (7C651131GU) 2543258 610550662 CML-R 80 80 0 CY7C65113C (7C651131GU) 2543258 610550662 CML-R 168 80 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HRS 30C/60%RH, MSL3 CY7C64013C (7C640131GU) 2535026 610539904 CML-R 168 50 0 CY7C65113C (7C651131GU) 2543258 610550662 CML-R 168 50 0 CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O 168 50 0 CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O 288 50 0 Cypress Semiconductor USB3 Device Family, P26 Technology, Fab2-Magnachip Device: CY7C64x13/CY7C65x13/7C66x13 QTP # 99443 V, 4.0 Page 13 of 13 August 2006 Reliability Test Data QTP #: Device Fab Lot # Assy Lot# Assy Loc 054604 Duration Samp Rej STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias CY7C64013C (7C640131GU) 2535026 610539904 CML-R 500 50 0 CY7C64013C (7C640131GU) 2535026 610539904 CML-R 1000 50 0 STRESS: TC COND. C -65C TO 150C CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O 300 50 0 CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O 500 50 0 CY7C63413C (7C634131CU) 2544313 510505323 INDNS-O 1000 50 0 STRESS: LOW TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, -30C, 6.5V, Vcc CY7C65113C (7C651131GU) 2543258 610550662 CML-R 500 51 0 Failure Mechanism