QTP 141603:128KB AND 256KB F-RAM MEMORY PRODUCT QUALIFICATION.pdf

Document No.001-96051 Rev. *A
ECN #: 4803254
Cypress Semiconductor
Product Qualification Report
QTP# 141603 VERSION *A
June, 2015
128Kb and 256Kb F-RAM Memory Product Qualification
130nm Technology, TI Fab
FM24V02A-G
256-Kbit (32K × 8) Serial (I2C) F-RAM
FM24V01A-G
128-Kbit (16K × 8) Serial (I2C) F-RAM
FM25V02A-G
256-Kbit (32K × 8) Serial (SPI) F-RAM
FM25V01A-G
128-Kbit (16K × 8) Serial (SPI) F-RAM
FM25V02A-DG
256-Kbit (32K × 8) Serial (SPI) F-RAM
FM25V02A-DGQ
256-Kbit (32K × 8) Serial (SPI) F-RAM
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Becky Thomas
Reliability Engineer
Reviewed By:
Zhaomin Ji
Reliability Engineer
Approved By:
Don Darling
Reliability Director
Company Confidential
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Page 1 of 13
Document No.001-96051 Rev. *A
ECN #: 4803254
PACKAGE/PRODUCT QUALIFICATION HISTORY
QTP
Number
Description of Qualification Purpose
Date
02-60-5112 /
124901
TI Process Qualification 130nm F-RAM Process
Aug 2008 /
Dec 2012
133705
New Product Qualification, 1Mb and 2Mb F-RAM Memory
Aug 2014
141603
New Product Qualification, 128Kb and 256Kb F-RAM Memory
Jan 2015
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Page 2 of 13
Document No.001-96051 Rev. *A
ECN #: 4803254
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: New Product Qualification, 128Kb and 256Kb F-RAM Memory
Marketing Part #:
FM24V02A-G, FM24V01A-G, FM25V02A-G, FM25V01A-G, FM25V02A-DG, FM25V02A-DGQ
Device Description:
128Kb and 256Kb F-RAM Serial and Parallel Memory
Cypress Division:
Cypress Semiconductor Corporation – Memory Products Division (MPD)
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
Proprietary* Metal Composition: Proprietary*
Proprietary*
Passivation Type and Thickness:
Generic Process Technology/Design Rule (-drawn): CMOS / 130nm
Gate Oxide Material/Thickness (MOS):
Proprietary*
Name/Location of Die Fab (prime) Facility:
Texas Instruments / Dallas
Die Fab Line ID/Wafer Process ID:
DMOS 5 / E035.1
*Texas Instruments’ proprietary information is available with signed NDA.
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY FACILITY SITE
8-pin SOIC, 150 mils
UTAC, Thailand (UT)
8-pin SOIC, 150 mils
CML, Philippines (RA)
8-pin TDFN
UTAC, Thailand (UT)
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Page 3 of 13
Document No.001-96051 Rev. *A
ECN #: 4803254
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
SW815
Package Outline, Type, or Name:
8LD SOIC (150mils)
Mold Compound Name/Manufacturer:
Mold Compound Flammability Rating:
G3000DA / Kyocera
V-0 / UL94
Mold Compound Alpha Emission Rate:
<0.1
Oxygen Rating Index: >28%
50% Typical
Lead Frame Designation:
FMP
Lead Frame Material:
Cu
Substrate Material:
N/A
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation Method/Metallization:
Backgrind
Die Separation Method:
Wafer Saw
Die Attach Supplier:
Henkel
Die Attach Material:
QMI 509
Bond Diagram Designation
001-87480
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au / 0.8 mil
Thermal Resistance Theta JA C/W:
146C/W
Package Cross Section Yes/No:
No
Assembly Process Flow:
001-91441/M
Name/Location of Assembly (prime) facility:
CML-RA
MSL LEVEL
3
REFLOW PROFILE
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CMI, USA; UTAC, Thailand; CML, Philippines / UTAC, Thailand; CML, Philippines
Note: Please contact a Cypress Representative for other package availability.
Company Confidential
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Page 4 of 13
Document No.001-96051 Rev. *A
ECN #: 4803254
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition (Temp/Bias)
Result
P/F
P
Data Retention (Plastic)
150 C, non-biased, 1,000 Hours
JESD22-A117 and JESD22-A103
Data Retention (Plastic)
125 C, non-biased, 1,000 Hours
JESD22-A117 and JESD22-A103
P
High Temperature Operating
Life
Early Failure Rate
Dynamic Operating Condition, Vcc = 3.60V, 125 C, 96
Hours
JESD22-A108
P
Endurance Test
MIL-STD-883, Method 883-1033, 1.1E6 cycles (full 256Kb
array) + 7.5E9 (single byte), Vcc = 3.60V, followed by
168hour Data Retention at 150C.
Dynamic Operating Condition, Vcc = 3.60V, 125 C, 1,000
Hours
JESD22-A108
JESD22-A102: 121 C, 100%RH, 15 PSIG, 168 Hours and
288 Hours
Precondition: JESD22 Moisture Sensitivity Level 3
(192 Hrs, 30 C, 60% RH)
MIL-STD-883, Method 1010, Condition C, -65 C to 150 C,
500 and 1,000 Cycles
Precondition: JESD22 Moisture Sensitivity Level 3
(192 Hrs, 30 C, 60% RH)
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level 3
(192 Hrs, 30 C, 60% RH)
(1,100V / 2,200V / 3,300V)
JEDEC EIA/JESD22-A114-B
P
High Temperature Operating
Life
Latent Failure Rate
Pressure Cooker Test
Temperature Cycle
Acoustic Microscopy
Electrostatic Discharge
Human Body Model (ESDHBM): FM25V02A-G,
FM24V02A-G, FM25V01A-G,
FM24V01A-G
Electrostatic Discharge
Charge Device Model (ESDCDM): FM25V02A-G,
FM24V02A-G, FM25V02ADGQ, FM25V01A-G,
FM24V01A-G
Static Latch up: FM25V02A-G,
FM24V02A-G, FM25V01A-G,
FM24V01A-G
P
P
P
P
P
(500V / 750V / 1,000V / 1,250V / 1,500V / 1,750V / 2,000V)
JESD22-C101
P
85C, ±140mA, 5.4V
JESD78
P
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Page 5 of 13
Document No.001-96051 Rev. *A
ECN #: 4803254
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
High Temperature Operating Life
Early Failure Rate
High Temperature Operating Life1,2
Long Term Failure Rate
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure Rate
1784 Devices*
0
N/A
N/A
0 PPM
0
0.7
55
17 FITs
1599 Devices
547,000 DHRs**
231,000 DHRs*
188,000 DHRs
*Leverage EFR/LFR data from New Product Qualification, 1Mb and 2Mb F-RAM Memory QTP#133705 (SPEC#001-93908)
*Leverage HTOL data from TI 130nm F-RAM Process QTP#124901 (SPEC#001-85093)
1
2
3
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
K = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
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Page 6 of 13
Document No.001-96051 Rev. *A
ECN #: 4803254
Reliability Test Data
QTP #: 141603
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: DATA RETENTION (125C, 1,000 hours)
FM25V02A-G
4438076
611435736
CML-RA
500
80
0
FM25V02A-G
4438076
611435736
CML-RA
1000
80
0
STRESS: DATA RETENTION (150C, 1,000 hours)
CY15B102Q-SXE
4351641
611410018
UTAC - UT
500
77
0
CY15B102Q-SXE
4351641
611410018
UTAC - UT
1000
77
0
15
0
STRESS: ACOUSTIC Microscopy, Before and After MSL3 Preconditioning
FM25V02A-G
4438076
611435736
CML-RA
COMP
STRESS: HIGH TEMPERATURE OPERATING LIFE- EARLY FAILURE RATE (125C, 96 hours, 3.60V)
FM25V02A-G
4438076
611435736
CML-RA
96
1599
0
STRESS: ENDURANCE (1.1E6 cycles (full 256Kb array) + 7.5E9 (single byte), 3.60V, followed by 168hour Data Retention at 150C)
FM25V02A-G
4438076
611435736
CML-RA
168
77
0
STRESS: HIGH TEMPERATURE OPERATING LIFE- LATENT FAILURE RATE (125C, 1,000 hours, 3.60V)
FM25V02A-G
4438076
611435736
CML-RA
168
188
0
FM25V02A-G
4438076
611435736
CML-RA
1000
188
0
STRESS: ESD- CHARGED DEVICE MODEL (500V)
FM25V02A-G
4438076
611435736
CML-RA
COMP
9
0
FM24V02A-G
4438076
611435737
CML-RA
COMP
9
0
FM25V02A-DGQ
4438076
611435722
UTAC - UT
COMP
9
0
FM25V01A-G
4438076
611442260
CML-RA
COMP
9
0
FM24V01A-G
4438076
611442261
CML-RA
COMP
9
0
Company Confidential
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Page 7 of 13
Document No.001-96051 Rev. *A
ECN #: 4803254
Reliability Test Data
QTP #: 141603
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD- CHARGED DEVICE MODEL (750V)
FM25V02A-G
4438076
611435736
CML-RA
COMP
3
0
FM24V02A-G
4438076
611435737
CML-RA
COMP
3
0
FM25V02A-DGQ
4438076
611435722
UTAC - UT
COMP
3
0
FM25V01A-G
4438076
611442260
CML-RA
COMP
3
0
FM24V01A-G
4438076
611442261
CML-RA
COMP
3
0
STRESS: ESD- CHARGED DEVICE MODEL (1,000V)
FM25V02A-G
4438076
611435736
CML-RA
COMP
3
0
FM24V02A-G
4438076
611435737
CML-RA
COMP
3
0
FM25V02A-DGQ
4438076
611435722
UTAC - UT
COMP
3
0
FM25V01A-G
4438076
611442260
CML-RA
COMP
3
0
FM24V01A-G
4438076
611442261
CML-RA
COMP
3
0
STRESS: ESD- CHARGED DEVICE MODEL (1,250V)
FM25V02A-G
4438076
611435736
CML-RA
COMP
3
0
FM24V02A-G
4438076
611435737
CML-RA
COMP
3
0
FM25V02A-DGQ
4438076
611435722
UTAC - UT
COMP
3
0
FM25V01A-G
4438076
611442260
CML-RA
COMP
3
0
FM24V01A-G
4438076
611442261
CML-RA
COMP
3
0
STRESS: ESD- CHARGED DEVICE MODEL (1,500V)
FM25V02A-G
4438076
611435736
CML-RA
COMP
3
0
FM24V02A-G
4438076
611435737
CML-RA
COMP
3
0
FM25V02A-DGQ
4438076
611435722
UTAC - UT
COMP
3
0
FM25V01A-G
4438076
611442260
CML-RA
COMP
3
0
FM24V01A-G
4438076
611442261
CML-RA
COMP
3
0
Company Confidential
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Page 8 of 13
Document No.001-96051 Rev. *A
ECN #: 4803254
Reliability Test Data
QTP #: 141603
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD- CHARGED DEVICE MODEL (1,750V)
FM25V02A-G
4438076
611435736
CML-RA
COMP
3
0
FM24V02A-G
4438076
611435737
CML-RA
COMP
3
0
FM25V02A-DGQ
4438076
611435722
UTAC - UT
COMP
3
0
FM25V01A-G
4438076
611442260
CML-RA
COMP
3
0
FM24V01A-G
4438076
611442261
CML-RA
COMP
3
0
STRESS: ESD- CHARGED DEVICE MODEL (2,000V)
FM25V02A-G
4438076
611435736
CML-RA
COMP
3
0
FM24V02A-G
4438076
611435737
CML-RA
COMP
3
0
FM25V02A-DGQ
4438076
611435722
UTAC - UT
COMP
3
0
FM25V01A-G
4438076
611442260
CML-RA
COMP
3
0
FM24V01A-G
4438076
611442261
CML-RA
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT (1,100V)
FM25V02A-G
4438076
611435736
CML-RA
COMP
3
0
FM24V02A-G
4438076
611435737
CML-RA
COMP
3
0
FM25V01A-G
4438076
611442260
CML-RA
COMP
3
0
FM24V01A-G
4438076
611442261
CML-RA
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT (2,200V)
FM25V02A-G
4438076
611435736
CML-RA
COMP
8
0
FM24V02A-G
4438076
611435737
CML-RA
COMP
8
0
FM25V01A-G
4438076
611442260
CML-RA
COMP
8
0
FM24V01A-G
4438076
611442261
CML-RA
COMP
8
0
STRESS: ESD-HUMAN BODY CIRCUIT (3,300V)
FM25V02A-G
4438076
611435736
CML-RA
COMP
3
0
FM24V02A-G
4438076
611435737
CML-RA
COMP
3
0
FM25V01A-G
4438076
611442260
CML-RA
COMP
3
0
FM24V01A-G
4438076
611442261
CML-RA
COMP
3
0
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Page 9 of 13
Document No.001-96051 Rev. *A
ECN #: 4803254
Reliability Test Data
QTP #: 141603
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: PRESSURE COOKER TEST (121C, 100%RH, with MSL3 Preconditioning)
FM25V02A-G
4438076
611435736
CML-RA
168
79
0
FM25V02A-G
4438076
611435736
CML-RA
288
78
0
STRESS: STATIC LATCH-UP TESTING (85C, ±140mA, 5.4V)
FM25V02A-G
4438076
611435736
CML-RA
COMP
6
0
FM24V02A-G
4438076
611435737
CML-RA
COMP
6
0
FM25V01A-G
4438076
611442260
CML-RA
COMP
6
0
FM24V01A-G
4438076
611442261
CML-RA
COMP
6
0
STRESS: TEMPERATURE CYCLE, CONDITION C (-65C TO 150C), with MSL3 Preconditioning
FM25V02A-G
4438076
611435736
CML-RA
500
80
0
FM25V02A-G
4438076
611435736
CML-RA
1000
80
0
Company Confidential
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Page 10 of 13
Document No.001-96051 Rev. *A
ECN #: 4803254
Reliability Test Data
QTP #: 133705
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
15
0
Failure Mechanism
STRESS: ACOUSTIC Microscopy, Before and After MSL3 Preconditioning
FM25V20A-G
4346426
611343226
UTAC - UT
COMP
STRESS: HIGH TEMPERATURE OPERATING LIFE- EARLY FAILURE RATE (125C, 96 hours, 3.60V)
FM25V20A-G
4346426
611343226
UTAC - UT
96
1784
0
STRESS: HIGH TEMPERATURE OPERATING LIFE- LATENT FAILURE RATE (125C, 1,000 hours, 3.60V)
FM25V20-G
060801410
060801410
UTAC - UT
1000
77
0
FM25V20-G
057847882
057847882
UTAC - UT
1000
77
0
FM25V20-G
15199101
15199101
UTAC - UT
1000
77
0
STRESS: ESD- CHARGED DEVICE MODEL(500V)
FM25V20A-G
4346426
611343226
UTAC - UT
COMP
12
0
FM28V202-TG
4346426
611343224
UTAC - UT
COMP
12
0
STRESS: ESD- CHARGED DEVICE MODEL(750V)
FM25V20A-G
4346426
611343226
UTAC - UT
COMP
3
0
FM28V202-TG
4346426
611343224
UTAC - UT
COMP
3
0
STRESS: ESD- CHARGED DEVICE MODEL(1,000V)
FM25V20A-G
4346426
611343226
UTAC - UT
COMP
3
0
FM28V202-TG
4346426
611343224
UTAC - UT
COMP
3
0
STRESS: ESD- CHARGED DEVICE MODEL(1,250V)
FM25V20A-G
4346426
611343226
UTAC - UT
COMP
3
0
FM28V202-TG
4346426
611343224
UTAC - UT
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT (1,100V)
FM25V20A-G
4346426
611343226
UTAC - UT
COMP
3
0
FM28V202-TG
4346426
611343224
UTAC - UT
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT (1,500V)
FM25V20A-G
4346426
611343226
UTAC - UT
COMP
5
0
FM28V202-TG
4346426
611343224
UTAC - UT
COMP
5
0
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Page 11 of 13
Document No.001-96051 Rev. *A
ECN #: 4803254
Reliability Test Data
QTP #: 133705
Device
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT (2,200V)
FM25V20A-G
4346426
611343226
UTAC - UT
COMP
8
0
FM28V202-TG
4346426
611343224
UTAC - UT
COMP
8
0
UTAC - UT
COMP
3
0
80
0
STRESS: ESD-HUMAN BODY CIRCUIT (3,300V)
FM25V20A-G
4346426
611343226
STRESS: PRESSURE COOKER TEST (121C, 100%RH, with MSL3 Preconditioning
FM25V20A-G
4346426
611343226
UTAC - UT
168
STRESS: STATIC LATCH-UP TESTING (85C, ±140mA, 5.4V)
FM25V20A-G
4346426
611343226
UTAC - UT
COMP
6
0
FM28V202-TG
4346426
611343224
UTAC - UT
COMP
6
0
STRESS: TEMPERATURE CYCLE, CONDITION C (-65C TO 150C), with MSL3 Preconditioning
FM25V20A-G
4346426
611343226
UTAC - UT
500
80
0
FM25V20A-G
4346426
611343226
UTAC - UT
1000
80
0
Company Confidential
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Page 12 of 13
Document No.001-96051 Rev. *A
ECN #: 4803254
Document History Page
Document Title:
Document Number:
Rev. ECN
No.
**
4623063
*A
4803254
QTP #141603:128KB AND 256KB F-RAM MEMORY PRODUCT QUALIFICATION
001-96051
Orig. of
Change
BECK
BECK
Description of Change
Initial Release
Indicated “Proprietary” Items on the “TECHNOLOGY/FAB PROCESS
DESCRIPTION” Table, Page 4.
Distribution: WEB
Posting:
None
Company Confidential
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Page 13 of 13