TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED P-CHANNEL MOSFET Qualified per MIL-PRF-19500/630 DEVICES LEVELS 2N7389 2N7389U JANSR(100K RAD(Si)) JANSF(300K RAD(Si)) ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS -100 Vdc Gate – Source Voltage VGS ± 20 Vdc ID1 -6.5 Adc ID2 -4.1 Adc Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation Ptl Drain to Source On State Resistance Rds(on) Operating & Storage Temperature Top, Tstg 25 (1) W 0.3 (2) Ω -55 to +150 °C Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C (2) VGS = -12Vdc, ID = -4.1A PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = -1mAdc V(BR)DSS -100 Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = -1.0mA VDS ≥ VGS, ID = -1.0mA, Tj = +125°C VDS ≥ VGS, ID = -1.0mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 -2.0 -1.0 Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = -80V VGS = 0V, VDS = -80V, Tj = +125°C IDSS1 IDSS2 -25 -0.25 µAdc mAdc rDS(on)1 rDS(on)2 0.3 0.35 Ω Ω rDS(on)3 0.54 Ω VSD -3.0 Vdc Static Drain-Source On-State Resistance VGS = -12V, ID = -4.1A pulsed VGS = -12V, ID = -6.5A pulsed Tj = +125°C VGS = -12V, ID = -4.1A pulsed Diode Forward Voltage VGS = 0V, ID = -6.5A pulsed T4-LDS-0126 Rev. 1 (091145) Max. TO-205AF (modified TO-39) JANSR2N7389, JANSF2N7389 See Figure 1 Unit Vdc -4.0 Vdc -5.0 18 PIN LEADLESS CHIP CARRIER JANSR2N7389U, JANSF2N7389U See Figure 2 Page 1 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED P-CHANNEL MOSFET Qualified per MIL-PRF-19500/630 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol Min. Max. Qg(on) Qgs Qgd VGS = -12V, ID = -6.5A VDS = -50V 45 10 25 Unit nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = -6.5A, VGS = -12Vdc, Gate drive impedance = 7.5Ω, VDD = -50Vdc Diode Reverse Recovery Time di/dt ≤ -100A/µs, VDD ≤ -50V, IF = -6.5A Min. Max. td(on) tr td(off) tf 30 50 70 70 trr 250 Unit ns ns POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3) (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = -1mAdc V(BR)DSS -100 VGS(th)1 VGS(th)1 -2.0 -2.0 Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = -1.0mA JANSR VDS ≥ VGS, ID = -1.0mA JANSF Max. Unit Vdc -4.0 -5.0 Vdc Gate Current VGS = ±20V, VDS = 0V IGSS1 ±100 nAdc Drain Current VGS = 0V, VDS = -80V IDSS1 -25 µAdc VDS(on) 1.23 Vdc VSD -3.0 Vdc Static Drain-Source On-State Voltage VGS = -12V, ID = -4.1A pulsed Diode Forward Voltage VGS = 0V, ID = -6.5A pulsed Note: (3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias (80V) conditions. T4-LDS-0126 Rev. 1 (091145) Page 2 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED P-CHANNEL MOSFET Qualified per MIL-PRF-19500/630 Single Event Effect (SEE) Characteristics: Heavy Ion testing of the 2N7389 device has been characterized at the Texas A&M cyclotron. The following SOA curve has been established using the elements, LET, range, and Total Energy conditions as shown: 2N7389 -110 TAMU Ar LET = 8.1 Range=230um Total Energy=558MeV -100 -90 Drain Bias, V -80 TAMU Kr LET = 26.8 Range=170um Total Energy=1121MeV -70 -60 -50 TAMU Ag LET = 40.6 Range=150um Total Energy=1426MeV -40 -30 TAMU Au LET=80.2 Range=155um Total Energy=1884MeV -20 -10 0 0 5 10 15 Gate Bias, V 20 25 It should be noted that total energy levels are considered to be a factor in SEE characterization. Comparisons to other datasets should not be based on LET alone. Please consult factory for more information. T4-LDS-0126 Rev. 1 (091145) Page 3 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED P-CHANNEL MOSFET Qualified per MIL-PRF-19500/630 Figure 1: Case Outline and Pin Configuration for JANSR2N7389 & JANSF2N7389 T4-LDS-0126 Rev. 1 (091145) Page 4 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED P-CHANNEL MOSFET Qualified per MIL-PRF-19500/630 Figure 2: Case Outline and Pin Configuration for JANSR2N7389U & JANSF2N7389U T4-LDS-0126 Rev. 1 (091145) Page 5 of 5