APT30GS60BRDL(G) 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT® TO The Thunderbolt HS™ IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. -24 7 An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DL series diode. Features G Single die IGBT with separate DL C C E G E Typical Applications • Fast Switching with low EMI • Tight parameter distribution • ZVS Phase Shifted Bridge • Very Low EOFF for Maximum Efficiency • Easy paralleling • Resonant Mode Switching • Short circuit rated • Low Forward Diode Voltage (VF) • Phase Shifted Bridge • Low Gate Charge • Ultrasoft Recovery Diode • Welding • RoHS Compliant • Induction heating • High Frequency SMPS Absolute Maximum Ratings Symbol Parameter Rating I C1 Continuous Collector Current TC = @ 25°C 54 I C2 Continuous Collector Current TC = @ 100°C 30 I CM Pulsed Collector Current 1 113 VGE Gate-Emitter Voltage Unit A ±30V SSOA Switching Safe Operating Area 113 tSC Short Circut Withstand Time 3 10 V μs Thermal and Mechanical Characteristics Parameter Total Power Dissipation TC = @ 25°C IGBT Min Typ Max Unit - - 250 W - - 0.50 RθJC Junction to Case Thermal Resistance RθCS Case to Sink Thermal Resistance, Flat Greased Surface - 0.11 - TJ, TSTG Operating and Storage Junction Temperature Range -55 - 150 - - 300 - 0.22 - oz - 5.9 - g TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Diode 1.0 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. Microsemi Website - http://www.microsemi.com °C/W °C 052-6353 Rev C 3-2012 Symbol PD Static Characteristics Symbol VBR(CES) ΔVBR(CES)/ΔTJ TJ = 25°C unless otherwise specified Parameter Collector-Emitter Breakdown Voltage Breakdown Voltage Temperature Coeff Collector-Emitter On Voltage 4 VGE(th) Gate-Emitter Threshold Voltage ΔVGE(th)/ΔTJ Threshold Voltage Temp Coeff ICES Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Input Capacitance Output Capacitance Cres Typ Max Unit 600 - - V Reference to 25°C, IC = 250μA - 0.60 - V/°C TJ = 25°C - 2.8 3.15 TJ = 125°C - 3.25 - 3 4 5 VGE = VCE, IC = 1mA VCE = 600V, VGE = 0V - 6.7 - - - 50 TJ = 125°C - - 1000 - - ±100 nA Min Typ Max Unit - 18 - S VGE = ±20V - 1600 - - 140 - Reverse Transfer Capacitance - 90 - Co(cr) Reverse Transfer Capacitance Charge Related 5 - 130 - Co(er) Reverse Transfer Capacitance Current Related 6 Gate-Emitter Charge Ggc Gate-Collector Charge td(on) tr td(off ) tf VGE = 0V, VCE = 25V f = 1MHz Turn-On Delay Time Rise Time Inductive Switching IGBT and Diode: Turn-Off Delay Time Fall Time Turn-On Switching Energy 8 Eon2 Turn-On Switching Energy 9 Eoff Turn-Off Switching Energy 10 tr td(off ) tf Eon1 VGE = 0V VCE = 0 to 400V VGE = 0 to 15V IC = 30A, VCE = 300V Eon1 td(on) mV/°C μA pF Total Gate Charge Qge V TJ = 25°C Test Conditions VCE = 50V, IC = 30A Forward Transconductance Coes Qg 052-6353 Rev C 3-2012 Parameter Cies Min TJ = 25°C unless otherwise specified Dynamic Characteristics Symbol gfs Test Conditions VGE = 0V, IC = 250μA VGE = 15V IC = 30A VCE(ON) APT30GS60BRDL(G) TJ = 25°C, VCC = 400V, IC = 30A RG = 9.1Ω 7, VGG = 15V Turn-On Delay Time Inductive Switching IGBT and Diode: Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy 8 Eon2 Turn-On Switching Energy 9 Eoff Turn-Off Switching Energy 10 TJ = 125°C, VCC = 400V, IC = 30A RG = 9.1Ω 7, VGG = 15V 95 - 145 - - 12 - - 65 - - 16 - - 29 - - 360 - - 27 - - TBD - - 800 - - 570 - - 16 - - 29 - - 390 - - 22 - - TBD - - 1185 - - 695 - nC ns μJ ns μJ TYPICAL PERFORMANCE CURVES APT30GS60BRDL(G) 120 120 VGE = 15V T = 125°C J IC, COLLECTOR CURRENT (A) 80 TJ = 25°C 60 40 TJ = 125°C 12V 11V 80 10V 60 9V 40 8V 20 20 6V TJ = 150°C 0 0 0 1 2 3 4 5 6 7 8 VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V) 0 5 10 15 20 25 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics 120 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) FIGURE 2, Output Characteristics 6 250μs PULSE TEST<0.5 % DUTY CYCLE 100 TJ = 125°C TJ = 25°C 80 TJ = -55°C 60 40 20 0 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 5 IC = 100A 4 50A IICC==30A 3 IC = 25A I = 15A 1 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) 16 14 IC = 30A 3 IC = 15A 2 1 VGE = 15V. 250μs PULSE TEST <0.5 % DUTY CYCLE 0 VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 50 75 100 125 150 TJ, Junction Temperature (°C) FIGURE 5, On State Voltage vs Junction Temperature 25 0 2000 20 40 60 80 100 120 GATE CHARGE (nC) FIGURE 6, Gate Charge 140 160 60 Cies 1000 100 Coes Cres 0 100 200 300 400 500 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 7, Capacitance vs Collector-To-Emitter Voltage IC, DC COLLECTOR CURRENT(A) 50 P C, CAPACITANCE ( F) C 2 FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage IC = 60A 4 10 TJ = 25°C. 250μs PULSE TEST <0.5 % DUTY CYCLE 16 VGE, GATE-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC = 60A 0 14 5 0 30 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 052-6353 Rev C 3-2012 IC, COLLECTOR CURRENT (A) VGE = 13 & 15V 100 100 TYPICAL PERFORMANCE CURVES APT30GS60BRDL(G) 500 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 25 20 VGE = 15V 15 10 5 VCE = 400V TJ = 25°C, TJ =125°C 0 RG = 9.1Ω L = 100μH 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current VGE =15V,TJ=25°C 200 100 VCE = 400V RG = 9.1Ω L = 100μH 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 60 RG = 9.1Ω, L = 100μH, VCE = 400V 60 RG = 9.1Ω, L = 100μH, VCE = 400V 50 TJ = 25 or 125°C,VGE = 15V tf, FALL TIME (ns) 50 tr, RISE TIME (ns) VGE =15V,TJ=125°C 300 0 0 70 400 40 30 40 30 TJ = 125°C, VGE = 15V 20 20 TJ = 25°C, VGE = 15V 10 10 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000 G 3000 TJ = 125°C,VGE =15V 2000 1000 TJ = 25°C,VGE =15V 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current V = 400V CE V = +15V GE R = 9.1Ω 1400 G 1200 TJ = 125°C, VGE = 15V 1000 800 600 400 200 0 0 5 0 1600 V = 400V CE V = +15V GE R = 9.1Ω EOFF, TURN OFF ENERGY LOSS (μJ) EON2, TURN ON ENERGY LOSS (μJ) 0 0 TJ = 25°C, VGE = 15V 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4 V = 400V CE V = +15V GE T = 125°C V = 400V CE V = +15V GE R = 9.1Ω Eon2,60A 3 Eoff,60A 2 Eon2,30A 1 Eoff,30A Eoff,15A Eon2 15A , 0 0 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (mJ) SWITCHING ENERGY LOSSES (mJ) 052-6353 Rev C 3-2012 J 4 G 3 Eon2,60A 2 Eoff,60A Eon2,30A 1 Eoff,30A Eon2,15A 0 Eoff,15A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES APT30GS60BRDL(G) 200 200 100 100 ICM IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) ICM 10 VCE(on) 13μs 100μs 1ms 1 10ms 100ms 10 VCE(on) 100μs 1ms DC line Scaling for Different Case & Junction Temperatures: IC = IC(T = 25°C)*(TJ - TC)/125 TJ = 125°C TC = 75°C 1 10ms 100ms TJ = 150°C TC = 25°C 1 DC line 0.1 13μs C 0.1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 17, Forward Safe Operating Area 1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 18, Maximum Forward Safe Operating Area 0.60 0.9 0.40 0.7 0.30 0.5 0.20 Note: P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.50 0.3 t1 t2 0.10 SINGLE PULSE 0.1 0.05 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 120 T = 75°C 0.0838 0.207 0.209 Dissipated Powe r (Watts ) 0.00245 0.00548 0.165 Z EXT are the external therma l impedances: Case to sink, sink to ambient, etc. Set to zero when modeling onl y the case to junction. Figure 20, Transient Thermal Impedance Model T = 100°C C 10 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 9.1Ω G 1 F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC 0 10 20 30 40 50 IC, COLLECTOR CURRENT (A) Figure 21, Operating Frequency vs Collector Current 052-6353 Rev C 3-2012 T C (°C) Z EXT T J (°C ) FMAX, OPERATING FREQUENCY (kHz) C APT30GS60BRDL(G) 10% Gate Voltage APT30DL60 TJ = 125°C td(on) Collector Current IC V CC 90% V CE tr 5% 5% 10% Collector Voltage Switching Energy A D.U.T. Figure 23, Turn-on Switching Waveforms and Definitions Figure 22, Inductive Switching Test Circuit Gate Voltage TJ = 125°C 90% td(off ) Collector Voltage 90% tf 10% 0 Collector Current Switching Energy Figure 24, Turn-off Switching Waveforms and Definitions FOOT NOTE: 1 3 4 5 6 052-6353 Rev C 3-2012 7 8 9 10 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Short circuit time: VGE = 15V, VCC ≤ 600V, TJ ≤ 150°C Pulse test: Pulse width < 380μs, duty cycle < 2% Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES. Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of VCE less than V(BR)CES, use this equation: Co(er) = -1.40E-7/VDS^2 + 1.47E-8/VDS + 5.95E-11. RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452). Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode. Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy. Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. DYNAMIC CHARACTERISTICS APT30GS60BRDL(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM APT30GS60BRDL(G) Characteristic / Test Conditions Maximum Average Forward Current (TC = 126°C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 51 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) UNIT Amps 320 STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions MIN Forward Voltage TYP MAX IF = 30A 1.25 1.6 IF = 60A 2.0 IF = 30A, TJ = 125°C UNIT Volts 1.25 DYNAMIC CHARACTERISTICS Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C F F R J - 64 trr Reverse Recovery Time - 317 Qrr Reverse Recovery Charge - 962 - 7 - 561 ns - 2244 nC - 9 - 264 ns - 3191 nC - 26 Amps Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF =30A, diF/dt = -200A/μs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A, diF/dt = -1000A/μs VR = 400V, TC = 125°C Maximum Reverse Recovery Current ZθJC, THERMAL IMPEDANCE (°C/W) nC - - Amps Amps Note: P DM IRRM VR = 400V, TC = 25°C t1 t2 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION T J (°C) T C (°C) .112 .437 .450 .0005 .0016 0.263 Dissipated Powe r (Watts ) Z EXT IRRM IF = 30A, diF/dt = -200A/μs ns Z EXT are the external therma l impedances: Case to sink, sink to ambient, etc. Set to zero when modeling onl y the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 052-6353 Rev C 3-2012 Symbol TYPICAL PERFORMANCE CURVES 800 100 TJ= 125°C TJ= 150°C TJ= 55°C 70 60 TJ= 25°C 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 4500 T = 125°C 60A J V = 400V R 4000 3500 30A 3000 15A 2500 2000 1500 1000 500 0 400 15A 300 200 100 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change 32 28 T = 125°C J V = 400V 60A R 30A 24 15A 20 16 12 8 4 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change IRRM 0.8 tRR 0.6 QRR 0.4 0 Duty cycle = 0.5 TJ = 126°C 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 300 CJ, JUNCTION CAPACITANCE (pF) 30A 500 1 0.2 052-6353 Rev C 3-2012 600 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 R 60A IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 80 T = 125°C J V = 400V 700 trr, COLLECTOR CURRENT (A) 90 Qrr, REVERSE RECOVERY CHARGE (nC) APT30GS60BRDL(G) 250 200 150 100 50 0 1 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature Vr diF /dt Adjus t +18V 0V D.U.T. trr/Q rr Wavefor m CURRENT TRANSFORMER Figure 9. Diode Test Circui 1 I F - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 I RRM - Maximum Reverse Recovery Current 4 e diode trr - Revers e R ecovery Time, measured from zero crossing wher current goes from positive to negative, to the point at which the straight line through I RRM and 0.25 I RRM passes through zero . t 1 4 6 Zer o . 5 5 Q rr - Area Under the Curve Defined by I 6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of t 3 2 0.25 I RRM Slope = di M/dt and trr. RRM rr. Figure 10, Diode Reverse Recovery Waveform and Definition s TO-247 (B) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) BSC Collector (Cathode) 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Collector (Cathode) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches ) 052-6353 Rev C 3-2012 Emitter (Anode)