APT50GS60BRDL(G) 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT® TO The Thunderbolt HS™ IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. -24 An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DL series diode. Features Single die IGBT with separate DL 7 G C C E G E Typical Applications • Fast Switching with low EMI • Tight parameter distribution • ZVS Phase Shifted Bridge • Very Low EOFF for Maximum Efficiency • Easy paralleling • Resonant Mode Switching • Short circuit rated • Low Forward Diode Voltage (VF) • Phase Shifted Bridge • Low Gate Charge • Ultrasoft Recovery Diode • Welding • RoHS Compliant • Induction heating • High Frequency SMPS Absolute Maximum Ratings Symbol Parameter Rating I C1 Continuous Collector Current TC = @ 25°C 93 I C2 Continuous Collector Current TC = @ 100°C 50 I CM Pulsed Collector Current 1 195 VGE Gate-Emitter Voltage Unit A ±30V SSOA Switching Safe Operating Area 195 tSC Short Circut Withstand Time 3 10 V μs Thermal and Mechanical Characteristics Total Power Dissipation TC = @ 25°C RθJC Junction to Case Thermal Resistance RθCS Case to Sink Thermal Resistance, Flat Greased Surface TJ, TSTG Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Mounting Torque (TO-247), 6-32 M3 Screw Max Unit W - - 415 - - 0.30 Diode Operating and Storage Junction Temperature Range TL Torque IGBT Typ 0.63 - 0.11 - -55 - 150 - - 300 - 0.22 - - 5.9 - g - - 10 in·lbf - - 1.1 N·m CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed. Microsemi Website - http://www.microsemi.com °C/W °C oz 11-2008 Min Rev B Parameter 052-6352 Symbol PD Static Characteristics Symbol VBR(CES) ∆VBR(CES)/∆TJ Parameter Collector-Emitter Breakdown Voltage Breakdown Voltage Temperature Coeff VCE(ON) Collector-Emitter On Voltage 4 VGE(th) Gate-Emitter Threshold Voltage ∆VGE(th)/∆TJ Threshold Voltage Temp Coeff ICES Zero Gate Voltage Collector Current IGES Gate-Emitter Leakage Current Dynamic Characteristics Symbol gfs Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Co(cr) Reverse Transfer Capacitance Charge Related 5 Co(er) Reverse Transfer Capacitance Current Related 6 Qg Total Gate Charge Gate-Emitter Charge Ggc Gate-Collector Charge td(on) Turn-On Delay Time td(off) tf 11-2008 Fall Time Turn-On Switching Energy Turn-On Switching Energy 9 Eoff Turn-Off Switching Energy 10 td(on) Turn-On Delay Time Eon1 Typ Max Unit 600 - - V Reference to 25°C, IC = 250μA - 0.60 - V/°C VGE = 15V IC = 50A TJ = 25°C - 2.8 3.15 TJ = 125°C - 3.25 - 3 4 5 VGE = VCE, IC = 1mA VCE = 600V, VGE = 0V V - 6.7 - TJ = 25°C - - 50 TJ = 125°C - - 1000 - - ±100 nA Min Typ Max Unit - 31 - S VGE = ±20V VGE = 0V, VCE = 25V f = 1MHz VGE = 0V VCE = 0 to 400V Inductive Switching IGBT and Diode: Turn-Off Delay Time Eon2 tf Rev B Rise Time 8 td(off) Min VGE = 0 to 15V IC = 50A, VCE = 300V Eon1 tr Test Conditions VGE = 0V, IC = 250μA Test Conditions VCE = 50V, IC = 50A Forward Transconductance Qge APT50GS60BRDL(G) mV/°C μA TJ = 25°C unless otherwise specified Parameter Cies tr 052-6352 TJ = 25°C unless otherwise specified Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy 8 Eon2 Turn-On Switching Energy 9 Eoff Turn-Off Switching Energy 10 TJ = 25°C, VCC = 400V, IC = 50A RG = 4.7Ω 7, VGG = 15V - 2635 - - 240 - - 145 - - 115 - pF 85 - 235 - - 18 - - 100 - - 16 - - 33 - - 225 - - 37 - - TBD - - 1.2 - - 0.755 - - 33 - Inductive Switching IGBT and Diode: - 33 - - 250 - TJ = 125°C, VCC = 400V, IC = 50A RG = 4.7Ω 7, VGG = 15V - 23 - - TBD - - 1.7 - - 0.950 - nC ns mJ ns mJ TYPICAL PERFORMANCE CURVES APT50GS60BRDL(G) 250 VGE = 15V T = 125°C J 125 IC, COLLECTOR CURRENT (A) 100 75 TJ = 25°C 50 TJ = 125°C TJ = 150°C 11V 175 10V 150 125 9V 100 8V 75 7V 50 6V 0 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 250μs PULSE TEST<0.5 % DUTY CYCLE 125 100 75 TJ = 25°C TJ = 125°C 25 0 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics 50 IC = 100A VGE = 15V. 250μs PULSE TEST <0.5 % DUTY CYCLE 4 IC = 50A 3 IC = 25A 2 1 0 IC = 100A 4 IC = 50A 3 IC = 25A 2 1 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 50 100 150 200 GATE CHARGE (nC) FIGURE 6, Gate Charge 250 100 P 1000 Coes Cres 0 100 200 300 400 500 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 7, Capacitance vs Collector-To-Emitter Voltage IC, DC COLLECTOR CURRENT(A) Cies C, CAPACITANCE ( F) 5 0 0 5000 10 TJ = 25°C. 250μs PULSE TEST <0.5 % DUTY CYCLE 16 25 50 75 100 125 150 TJ, Junction Temperature (°C) FIGURE 5, On State Voltage vs Junction Temperature 100 6 FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage VGE, GATE-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 5 = 13 & 15V 25 0 0 1 2 3 4 5 6 VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V) 150 GE 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 11-2008 25 V 200 Rev B IC, COLLECTOR CURRENT (A) 225 052-6352 150 TYPICAL PERFORMANCE CURVES 16 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 18 VGE = 15V 14 12 10 8 6 4 VCE = 400V TJ = 25°C, TJ =125°C 2 RG = 4.7Ω 0 L = 100μH 250 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current VGE =15V,TJ=125°C 200 VGE =15V,TJ=25°C 150 100 50 VCE = 400V RG = 4.7Ω 0 0 100 APT50GS60BRDL(G) 300 20 L = 100μH 0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 80 RG = 4.7Ω, L = 100μH, VCE = 400V RG = 4.7Ω, L = 100μH, VCE = 400V 70 TJ = 25 or 125°C,VGE = 15V 60 tf, FALL TIME (ns) tr, RISE TIME (ns) 80 60 40 50 40 TJ = 125°C, VGE = 15V 30 20 20 TJ = 25°C, VGE = 15V 10 0 0 0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 2500 V = 400V CE V = +15V GE R = 4.7Ω EOFF, TURN OFF ENERGY LOSS (μJ) EON2, TURN ON ENERGY LOSS (μJ) 6000 G 5000 TJ = 125°C,VGE =15V 4000 0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3000 2000 1000 TJ = 25°C,VGE =15V 0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current J Eon2,100A Eoff,100A 4 Eon2,50A Eoff,50A 2 0 Eoff,25A Eon2,25A 0 1500 1000 500 TJ = 25°C, VGE = 15V 6 8 6 TJ = 125°C, VGE = 15V 0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (mJ) SWITCHING ENERGY LOSSES mJ) 11-2008 Rev B 052-6352 V = 400V CE V = +15V GE T = 125°C G 2000 0 0 10 V = 400V CE V = +15V GE R = 4.7Ω V = 400V CE V = +15V GE R = 4.7Ω G 5 Eon2,100A 4 3 Eoff,100A 2 Eon2,50A Eoff,50A 1 Eon2,25A 0 Eoff,25A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES APT50GS60BRDL(G) 200 200 100 ICM VCE(on) 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 100 13μs 100μs 1ms 10ms 1 100ms DC line 0.1 TJ = 125°C TC = 75°C ICM VCE(on) 10 13μs 100μs 1ms 10ms TJ = 150°C TC = 25°C 1 0.1 1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 17, Forward Safe Operating Area 100ms DC line Scaling for Different Case & Junction Temperatures: IC = IC(T = 25°C)*(TJ - TC)/125 C 1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 18, Maximum Forward Safe Operating Area 0.30 0.9 0.25 0.7 0.20 0.5 0.15 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.35 0.3 0.10 t1 t2 0.05 0 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.1 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.00606 0.260 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. Figure 20, Transient Thermal Impedance Model 75°C 100 F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf 80 60 40 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 4.7Ω 20 0 G 0 100°C f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC 10 20 30 40 50 60 70 80 90 IC, COLLECTOR CURRENT (A) Figure 21, Operating Frequency vs Collector Current 11-2008 0.226 120 Rev B 0.0731 Dissipated Power (Watts) 140 052-6352 TC (°C) ZEXT TJ (°C) FMAX, OPERATING FREQUENCY (kHz) 160 APT50GS60BRDL(G) APT50DL60 Gate Voltage 10% TJ = 125°C td(on) tr IC V CC Collector Current V CE 90% 5% 10% A 5% Collector Voltage Switching Energy D.U.T. Figure 23, Turn-on Switching Waveforms and Definitions Figure 22, Inductive Switching Test Circuit Gate Voltage TJ = 125°C 90% td(off) Collector Voltage 90% tf 10% Collector Current 0 Switching Energy Figure 24, Turn-off Switching Waveforms and Definitions 052-6352 Rev B 11-2008 FOOT NOTE: 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 3 Short circuit time: VGE = 15V, VCC ≤ 600V, TJ ≤ 150°C 4 Pulse test: Pulse width < 380μs, duty cycle < 2% 5 Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES. 6 Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of VCE less than V(BR)CES, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10. 7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452). 8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode. 9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy. 10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. DYNAMIC CHARACTERISTICS APT50GS60BRDL(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol IF(AV) IF(RMS) IFSM APT50GS60BRDL(G) Characteristic / Test Conditions Maximum Average Forward Current (TC = 124°C, Duty Cycle = 0.5) UNIT 50 RMS Forward Current (Square wave, 50% duty) 150 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 320 Amps STATIC ELECTRICAL CHARACTERISTICS Symbol VF Characteristic / Test Conditions Forward Voltage MIN TYP MAX IF = 50A 1.25 1.6 IF = 100A 2.0 IF = 50A, TJ = 125°C UNIT Volts 1.25 DYNAMIC CHARACTERISTICS Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C F F R J - 52 trr Reverse Recovery Time - 399 Qrr Reverse Recovery Charge - 1498 - 9 - 649 ns - 3734 nC - 13 - 284 ns - 5134 nC - 34 Amps Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 50A, diF/dt = -1000A/μs VR = 400V, TC = 125°C Maximum Reverse Recovery Current - - Amps Amps 0.7 0.6 0.5 0.4 0.3 Note: 0.2 PDM t1 t2 0.1 0 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TJ (°C) TC (°C) 0.316 Dissipated Power (Watts) 0.00467 0.312 0.1483 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 11-2008 ZθJC, THERMAL IMPEDANCE (°C/W) IRRM IF =50A, diF/dt = -200A/μs nC Rev B IRRM VR = 400V, TC = 25°C ZEXT IRRM IF = 50A, diF/dt = -200A/μs ns 052-6352 Symbol TYPICAL PERFORMANCE CURVES APT50GS60BRDL(G) 700 120 TJ= 125°C trr, COLLECTOR CURRENT (A) IF, FORWARD CURRENT (A) 100 TJ= 55°C 80 TJ= 25°C 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) FIGURE 2, Forward Current vs. Forward Voltage 100A R 7000 6000 50A 5000 25A 4000 3000 2000 1000 0 0.8 CJ, JUNCTION CAPACITANCE (pF) 11-2008 Rev B 200 100 40 T = 125°C J V = 400V R 50A 100A 35 30 25A 25 20 15 10 5 0 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 70 IRRM 50 40 30 20 0.2 10 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 6, Dynamic Parameters vs Junction Temperature 500 052-6352 25A 300 60 0.4 0 400 tRR QRR 0.6 50A 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 3, Reverse Recovery Time vs. Current Rate of Change IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/μs) 0 200 400 600 800 1000 -diF/dt, CURRENT RATE OF CHANGE (A/μs) FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change 1.2 1.0 500 45 T = 125°C J V = 400V R 600 0 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 0 8000 T = 125°C J V = 400V 100A TJ= 150°C 450 400 350 300 250 200 150 100 50 0 0 10 100 400 VR, REVERSE VOLTAGE (V) FIGURE 8, Junction Capacitance vs. Reverse Voltage 0 Duty cycle = 0.5 TJ = 126°C 25 50 75 100 125 150 175 Case Temperature (°C) FIGURE 7, Maximum Average Forward Current vs. Case Temperature Vr diF /dt Adjust +18V 0V D.U.T. trr/Qrr Waveform CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 1 4 6 Zero 5 5 Qrr - Area Under the Curve Defined by IRRM and trr. 6 diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr. 3 2 0.25 IRRM Slope = diM/dt Figure 10, Diode Reverse Recovery Waveform and Definitions TO-247 (B) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) Collector (Cathode) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Collector (Cathode) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. 052-6352 Rev B Dimensions in Millimeters and (Inches) 11-2008 Emitter (Anode)