PPC INC. 7516 Central Industrial Drive Riviera Beach, FL 33404 PH: 561-842-0305 Fax: 561-845-7813 PPNGZ52F120A PPNHZ52F120A Features • • • • • • • • Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed package Low package inductance Very low thermal resistance Reverse polarity available upon request: PPNH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (PPNHZ52F120A only) TO-258 1200 Volts 52 Amps 3.2 Volts vce(sat) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Maximum Ratings @ 25°° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C Tj= 90°C Peak Collector Current (pulse width limited by Tjmax,) Tj= 25°C Tj= 90°C Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200µH, RG= 25Ω, Tj= 25°C VCE≤ 1200V, TJ= 150°C, tsc≤ 10µs Short circuit current (SOA) , Short circuit (reverse) current (RBSOA) , VCE≤ 1200V, TJ= 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode, PPNHZ52F120A only) Pulse Source Current (Body Diode, PPNHZ52F120A only) Thermal Resistance, Junction to Case Datasheet# MSC1376.PDF SYMBOL MAX. UNIT BVCES 1200 Volts BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS 1200 +/-20 +/-30 52 33 104 66 65 Volts Volts Volts Amps IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC 260 66 300 -55 to +150 -55 to +150 50 100 0.42 A A Watts °C °C Amps Amps °C/W Amps mJ PPC INC. PPNGZ52F120A PPNHZ52F120A Electrical Parameters @ 25°° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage Gate-to-Emitter Leakage Current SYMBOL CONDITIONS BVCES VGS = 0 V, IC = 250 µA VGE(th) VCE = VGE, IC = 350 µA VGE = ± 20VDC, VCE = 0 IGES Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) ICES VCE(sat) VCE =0.8•BVCES VGE = 0 V VGE= 15V, IC= 25A IC= 25A IC= 60A IC= 30A VCE = 20 V; IC = 25 A MIN TYP. MAX 1200 4.5 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C V 5.5 2.7 3.3 3.4 4.3 6.5 ±100 ±200 250 1000 3.2 3.9 µA V gfs Input Capacitance Output Capacitance Reverse Transfer Capacitance INDUCTIVE LOAD, Tj= 125°° C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy INDUCTIVE LOAD, Tj= 125°° C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge Antiparallel diode forward voltage (PPNHZ52F120A only) Antiparallel diode reverse recovery time (PPNHZ52F120A only) Antiparallel diode reverse recovery charge (PPNHZ52F120A only) Antiparallel diode peak recovery current (PPNHZ52F120A only) Cies Coes Cres VGE = 0 V, VCE = 25 V, f = 1 MHz 1650 250 110 2200 380 160 pF td(on) tri Eon td(off) tfi Eoff VGE = 15 V, VCE = 600 V, IC = 25 A, RG = 47 Ω, L= 100 µH note 2, 3 75 65 3.6 420 45 2.4 110 100 ns ns mJ ns ns mJ td(on) tri Eon td(off) tfi Eoff Qg Qge Qgc VF VGE = 15 V, VCE = 600 V, IC = 50 A, RG = 47 Ω, L= 100 µH note 2, 3 trr Qrr IRM IE= 10 A TJ = 25 °C IE= 10 A TJ = 100 °C IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 800 A/us, TJ= 125°C IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 800 A/us, TJ= 125°C IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 800 A/us, TJ= 125°C Notes (1) (2) (3) (4) Pulse test, t ≤ 300 µ s, duty cycle δ ≤ 2% switching times and losses may increase for larger VCE and/or RG values or higher junction temperatures. switching losses include “tail” losses Microsemi Corp. does not manufacture the igbt die; contact company for details. Datasheet# MSC1376.PDF 20 V nA Forward Transconductance (1) VGE = 15 V, VCE = 600V, IC = 25A 8.5 UNIT 95 90 10 420 45 4.2 160 20 75 2.4 2 S 560 60 ns ns mJ ns ns mJ nC 3 TBD 60 TBD 800 TBD 22 V V ns ns nC nC A A PPC INC. PPNGZ52F120A PPNHZ52F120A Mechanical Outline Datasheet# MSC1376.PDF