2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MM118-XX SERIES Features • Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF • Compact and rugged construction offering weight and space savings • Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “T”suffix to part number, see option below) • HPM (Hermetic Power Module) • Isolation voltage capability (in reference to the base) in excess of 3kV • Very low thermal resistance • Thermally matched construction provides excellent temperature and power cycling capability • Additional voltage ratings or terminations available upon request 600 / 1200 Volts 150 Amps 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (IGBT) BRIDGE Maximum Ratings per switch @ 25°C (unless otherwise specified) PART NUMBER SYMBOL MM118-06 MM118-12 Collector-to-Emitter Breakdown Voltage (Gate shorted to Emitter), @ Tj≥ 25°C Collector-to-Gate Breakdown Voltage @ Tj≥ 25°C, RGS= 1 MΩ Gate-to-Emitter Voltage continuous transient Continuous Collector Current Tj = 25°C Tj= 90°C Peak Collector Current, pulsewidth limited by Tj max Power Dissipation Thermal resistance, junction to base per switch BVCES 600 V 1200 V BVCGR 600 V 1200 V VGES VGEM IC25 IC90 +/- 20 V +/- 30 V 60 A 32 A +/- 20 V +/- 30 V 52 A 33 A ICM PD RΘ jc, max RΘ , typ 120 A 165 W 0.75°C/W 0.5°C/W 104 A 165 W 0.75°C/W 0.5°C/W Mechanical Outline Datasheet# MSC0321A MM-XX SERIES Maximum Ratings @ 25°C (unless otherwise specified) - continued DESCRIPTION Short Circuit Reverse Current (RBSOA) @ Tj= 125°C, VCE= 0.8 x VCES Junction and Storage Temperature Range (°C) Continuous Source Current (parallel Diode) Pulse Source Current (parallel Diode) SYMBOL MM118-06 MM118-12 Imax Tj, Tstg IS ISM 64 A -55 to +150 60 A 100 A 66 A -55 to +150 50 A 100 A Electrical Parameters, per switch @ 25°C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage SYMBOL CONDITIONS BVCES VGS = 0 V, IC = 250 µA VGE(th) VCE = VGE, IC = 250 µA VCE = VGE, IC = 2.5 mA VCE = VGE, IC = 350 µA VGE = ± 20VDC, VCE = 0 Gate-to-Emitter Leakage Current IGES Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) ICES VCE(sat) Forward Transconductance (1) gfs Input Capacitance Output Capacitance Reverse Transfer Capacitance Cies VCE =0.8• BVCES VGE = 0 V VGE= 15V, IC= 30A IC= 60A IC= 30A IC= 30A VGE= 15V, IC= 25A IC= 50A IC= 25A VCE ≥ 10 V; IC = 30 A VCE ≥ 10 V; IC = 30 A TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 25°C TJ = 25°C TJ = 125°C VGE = 0 V, VCE = 25 V, f = 1 MHz Coes Cres INDUCTIVE LOAD, Tj= 25°C (2,3) Turn-on Delay Time td(on) Rise Time tri On Energy Turn-off Delay Time Fall Time Eon td(off) Off Energy tfi Eoff Datasheet# MSC0321A VGE = 15 V, L= 100 µH note 2, 3 for MM118-06: VCE = 480 V, IC = 30 A, RG = 4.7 Ω for MM118-12: VCE= 600 V, IC= 25 A, RG = 47 Ω PART MIN MM118-06 MM118-12 MM118-06F MM118-06L MM118-12 (ALL) 600 1200 2.5 4 4.5 TYP. MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 15 7 8.5 UNIT V 4 5.5 (ALL) MM118-06F MM118-06F MM118-06F MM018-06L MM118-12 MM118-12 MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MAX 2.2 3.5 2.2 2.2 2.7 3.4 3.3 20 13 20 2500 2760 1650 230 240 250 70 51 110 25 60 75 30 130 65 3.6 175 400 420 125 400 45 1.3 5 2.4 5.0 7 6.5 ±100 ±200 200 1000 2.9 tbd tbd 2.5 3.2 tbd 3.9 V nA µA V S tbd tbd 2200 tbd tbd 380 tbd tbd 160 pF tbd tbd 110 tbd tbd 100 tbd tbd 560 175 tbd 60 - ns ns ns ns ns ns mJ ns ns ns ns ns ns mJ mJ mJ INDUCTIVE LOAD, Tj= 125°C (2,3) Turn-on Delay Time td(on) Rise Time tri On Energy VGE = 15 V, L= 100 µH note 2, 3 for MM118-06: VCE = 480 V, IC = 30 A, RG = 4.7 Ω for MM118-12: VCE= 600 V, IC= 25 A, RG = 47 Ω Eon Turn-off Delay Time Fall Time td(off) Off Energy tfi Eoff Total Gate Charge Qg Gate-to-Emitter Charge VGE = 15 V, for MM118-06: VCE = 300V, IC= 30 A for MM118-12: VCE= 600 V, IC= 25 A Qge Gate-to-Collector (Miller) Charge Qgc Antiparallel diode forward voltage (1) VF Antiparallel diode reverse recovery time trr Antiparallel diode reverse recovery charge Qrr Antiparallel diode peak recovery current IRM IE= 15 A TJ = 25 °C IE= 30 A TJ = 25 °C IE= 50 A TJ = 25 °C IE= 15 A TJ = 150 °C IE= 10 A TJ = 25 °C IE= 10 A TJ = 100 °C IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 100 A/us, TJ= 125°C IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 100 A/us, TJ= 125°C IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 10 A, dIE/dt= 100 A/us, TJ= 125°C MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06F MM118-06L MM118-12 MM118-06 MM118-06 MM118-06 MM118-06 MM118-12 MM118-12 MM118-06 MM118-06 MM118-12 MM118-12 MM118-06 MM118-06 MM118-12 MM118-12 MM118-06 MM118-06 MM118-12 MM118-12 Notes (1) (2) (3) (4) Pulse test, t ≤ 300 µs, duty cycle δ≤ 2% switching times and losses may increase for larger VCE and/or RG values or higher junction temperatures. switching losses include “tail” losses Microsemi does not manufacture the igbt die; contact Microsemi for details. 25 60 95 35 130 90 1 4.2 10 250 540 420 260 600 45 4 12 4.2 125 110 160 23 34 20 50 47 75 1.7 1.9 2.4 2 140 60 160 320 tbd 800 3 4.2 tbd 22 tbd tbd tbd tbd tbd tbd tbd 1000 tbd tbd 1500 tbd 150 150 tbd 35 45 tbd 75 63 tbd 1.5 1.3 3 100 tbd - ns ns ns ns ns ns mJ mJ mJ ns ns ns ns ns ns mJ mJ mJ nC V ns nC A