INTERSIL HGTG20N50C1D

HGTG20N50C1D
20A, 500V N-Channel IGBT
with Anti-Parallel Ultrafast Diode
April 1995
Features
Package
• 20A, 500V
JEDEC STYLE TO-247
EMITTER
• Latch Free Operation
COLLECTOR
• Typical Fall Time < 500ns
GATE
COLLECTOR
(BOTTOM SIDE
METAL)
• High Input Impedance
• Low Conduction Loss
• With Anti-Parallel Diode
• tRR < 60ns
Description
The IGBT is a MOS gated high voltage switching device
combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between +25oC and +150oC. The diode used in
parallel with the IGBT is an ultrafast (tRR < 60ns) with soft
recovery characteristic.
Terminal Diagram
C
G
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contractors.
E
PACKAGING AVAILABILITY
PART NUMBER
HGTG20N50C1D
PACKAGE
TO-247
BRAND
G20N50C1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
NOTE: 1. TJ = +150oC, Minimum RGE = 25Ω without latch
HGTG20N50C1D
500
500
26
20
35
±20
26
20
75
0.8
-55 to +150
260
UNITS
V
V
A
A
A
V
A
A
W
W/oC
oC
oC
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-71
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2796.3
Specifications HGTG20N50C1D
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
Collector-Emitter Breakdown Voltage
BVCES
IC = 1mA, VGE = 0V
500
-
V
Gate Threshold Voltage
VGE(TH)
VGE = VCE, IC = 1mA
2
4.5
V
VCE = 500V
-
250
µA
-
1000
µA
VGE = ±20V, VCE = 0V
-
100
nA
IC = 20A, VGE = 10V
-
2.5
V
IC = 35A, VGE = 20V
-
3.2
V
VGEP
IC = 10A, VCE = 10V
-
6 (Typ)
V
On-State Gate Charge
QG(ON)
IC = 10A, VCE = 10V
-
33 (Typ)
nC
Turn-On Delay Time
tD(ON)I
IC = 20A, VCE(CLP) = 300V, L = 25µH,
TJ = +100oC, VGE = 10V, RG = 25Ω
-
50
ns
-
50
ns
tD(OFF)I
-
400
ns
tFI
400 (Typ)
500
ns
Zero Gate Voltage Collector Current
ICES
TC =
Gate-Emitter Leakage Current
IGES
Collector-Emitter On-Voltage
VCE(SAT)
Gate-Emitter Plateau Voltage
Rise Time
tRI
Turn-Off Delay Time
Fall Time
+125oC,
VCE = 500V
IC = 20A, VCE(CLP) = 300V, L = 25µH,
TJ = +100oC, VGE = 10V, RG = 25Ω
µJ
Turn-Off Energy Loss Per Cycle (Off Switching
Dissipation = WOFF x Frequency)
WOFF
1070 (Typ)
Thermal Resistance Junction-to-Case (IGBT)
RθJC
-
1.25
oC/W
Thermal Resistance of Diode
RθJC
-
1.5
ns
Diode Forward Voltage
VEC
IEC = 20A
-
1.8
V
Diode Reverse Recovery Time
tRR
IEC = 20A, diEC /dt = 100A/µs
-
60
ns
NORMALIZED GATE THRESHOLD VOLTAGE (V)
RATED POWER DISSIPATION (%)
Typical Performance Curves
100
80
60
40
20
0
+25
+50
+75
+150
+100
+125
VGE = VCE, IC = 1mA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-50
+150
0
+50
+100
+150
TJ , JUNCTION TEMPERATURE (oC)
TC , CASE TEMPERATURE (oC)
FIGURE 1. POWER DISSIPATION vs TEMPERATURE
DERATING CURVE
FIGURE 2. TYPICAL NORMALIZED GATE-THRESHOLD
VOLTAGE vs JUNCTION TEMPERATURE
3-72
HGTG20N50C1D
Typical Performance Curves (Continued)
35
VGE = 20V
VCE = 10V, PULSE TEST
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
ICE, COLLECTOR CURRENT (A)
ICE, COLLECTOR CURRENT (A)
35
25
20
+25oC
15
+125oC
10
-40oC
30
TC = +25oC
VGE = 10V
VGE = 8V
25
VGE = 7V
20
VGE = 6V
15
VGE = 5V
10
VGE = 4V
5
5
0
2.5
5.0
7.5
10
0
1
VGE, GATE-TO-EMITTER VOLTAGE (V)
2
3
4
5
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 4. TYPICAL SATURATION CHARACTERISTICS
2700
35
f = 0.1MHz
PULSE DURATION = 80µs
2250
DUTY CYCLE = 0.5% MAX
30
C, CAPACITANCE (pF)
ICE, COLLECTOR CURRENT (A)
VCE = 10V, PULSE TEST
25
20
15
1800
1350
CISS
900
COSS
450
10
CRSS
5
0
1
2
3
0
4
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER ON VOLTAGE (V)
FIGURE 5. TYPICAL COLLECTOR-TO-EMITTER ON-VOLTAGE
vs COLLECTOR CURRENT
FIGURE 6. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
400
3.00
IC = 20A, VGE = 10V, VCE(CLP) = 300V
2.75
IC = 20A, VGE = 10V
tD(OFF)I , SWITCHING TIME (ns)
VCE(ON), COLLECTOR-EMITTER VOLTAGE (V)
10
2.50
IC = 20A, VGE = 15V
2.25
2.00
IC = 10A, VGE = 10V
1.75
1.50
+25
IC = 10A, VGE = 15V
+50
+75
L = 25µH, RG = 25Ω
300
200
100
0
+100
+125
+25
+150
TJ , JUNCTION TEMPERATURE (oC)
+50
+75
+100
+125
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 7. TYPICAL VCE(ON) vs TEMPERATURE
FIGURE 8. TYPICAL TURN-OFF DELAY TIME
3-73
+150
HGTG20N50C1D
Typical Performance Curves (Continued)
800
WOFF = ∫ IC * VCEdt
VGE
IC = 10A, VGE = 10V, VCE(CLP) = 300V
700
L = 25µH, RG = 25Ω
IC
tFI , FALL TIME (ns)
600
VCE
500
400
300
200
100
0
+25
+50
+75
+100
+125
+150
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 9. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
FIGURE 10. TYPICAL FALL TIME (IC = 10A)
1000
800
IC = 20A, VGE = 10V, VCE(CLP) = 300V
700
WOFF , TURN OFF ENERGY (mJ)
L = 25µH, RG = 25Ω
tFI , FALL TIME (ns)
600
500
400
300
200
100
VGE = 10V, VCE(CLP) = 300V
800
L = 25µH, RG = 25Ω
700
600
500
400
300
200
100
0
+25
+50
+75
+100
+125
TJ , JUNCTION TEMPERATURE
0
+150
+25
(oC)
+50
+75
+100
TJ , JUNCTION TEMPERATURE
FIGURE 11. TYPICAL FALL TIME (IC = 20A)
+125
+150
(oC)
FIGURE 12. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
10
500
80
8
GATE
EMITTER
VOLTAGE
6
250
VCC = 0.25 BVCES
RL = 25Ω
IG(REF) = 0.76mA
VGE = 10V
125
4
2
COLLECTOR-EMITTER VOLTAGE
70
t, RECOVERY TIMES (ns)
VCC = BVCES
375
VGE, GATE-EMITTER VOLTAGE (V)
VCE, COLLECTOR-EMITTER VOLTAGE (V)
900
60
50
40
tRR
30
tA
20
tB
10
0
0
IG(ACT)
0
IG(REF)
IG(REF)
20
TIME (µs)
80
1
IG(ACT)
10
100
IEC , EMITTER-COLLECTOR CURRENT (A)
NOTE: For Turn-Off gate currents in excess of 3mA. VCE Turn-Off
is not accurately represented by this normalization.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
FIGURE 14. TYPICAL tRR, tA, tB vs FORWARD CURRENT
3-74
HGTG20N50C1D
Typical Performance Curves (Continued)
IEC , EMITTER-COLLECTOR CURRENT (A)
100
10
TJ = +150oC
1.0
TJ = +100oC
0.1
TJ = +25oC
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VEC , EMITTER-COLLECTOR VOLTAGE (V)
FIGURE 15. FORWARD VOLTAGE vs FORWARD CURRENT CHARACTERISTIC
Test Circuit
RL = 4Ω
L = 25µH
80V
1/RG = 1/RGEN + 1/RGE
VCE (CLP) =
300V
RGEN = 50Ω
20V
RGE = 50Ω
0V
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
3-75
ASIA
Intersil (Taiwan) Ltd.
Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029