2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A Features • • • • • • • • 1200 Volts 52 Amps 3.2 Volts vce(sat) Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)Z52F120B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHZ52F120A only) N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Maximum Ratings @ 25°°C (unless otherwise specified) DESCRIPTION SYMBOL MAX. UNIT BVCES 1200 Volts 1200 +/-20 +/-30 52 33 Volts Volts Volts Amps Tj= BVCGR VGES VGEM IC25 IC90 Tj= 25°C Tj= ICM(25) ICM(90) 104 66 Amps EAS 65 mJ IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC 260 66 300 -55 to +150 -55 to +150 50 100 0.4 A A Watts °C °C Amps Amps °C/W Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C 90°C Peak Collector Current (pulse width limited by Tjmax,) 90°C Avalanche energy (single pulse) @ IC= 25A, VCC= 50V, L= 200µH, RG= 25Ω, Tj= 25°C VCE≤ 1200V, TJ= 150°C, tsc≤ 10µs Short circuit current (SOA) , Short circuit (reverse) current (RBSOA) , VCE≤ 1200V, TJ= 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode, MSAHZ52F120A only) Pulse Source Current (Body Diode, MSAHZ52F120A only) Thermal Resistance, Junction to Case Mechanical Outline COLLECTOR EMITTER (MS…A) GATE (MS…B) Datasheet# MSC0295A MSAGZ52F120A MSAHZ52F120A Electrical Parameters @ 25°°C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage Gate-to-Emitter Leakage Current SYMBOL CONDITIONS BVCES VGS = 0 V, I C = 250 µA VGE(th) VCE = VGE, IC = 350 µA VGE = ± 20VDC, VCE = 0 IGES Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) ICES VCE(sat) Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance INDUCTIVE LOAD, Tj= 125°°C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy INDUCTIVE LOAD, Tj= 125°°C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge Antiparallel diode forward voltage (MSAHZ52F120A only) Antiparallel diode reverse recovery time (MSAHZ52F120A only) Antiparallel diode reverse recovery charge (MSAHZ52F120A only) Antiparallel diode peak recovery current (MSAHZ52F120A only) gfs VCE =0.8•BVCES VGE = 0 V VGE= 15V, I C= 25A I C= 25A I C= 60A I C= 30A VCE = 20 V; I C = 25 A TYP. MAX 1200 4.5 T J = 25°C T J = 125°C TJ = 25°C T J = 125°C T J = 25°C T J = 125°C T J = 25°C T J = 125°C 8.5 UNIT V 5.5 2.7 3.3 3.4 4.3 20 6.5 ±100 ±200 250 1000 3.2 3.9 V nA µA V S Cies Coes Cres VGE = 0 V, V CE = 25 V, f = 1 MHz 1650 250 110 2200 380 160 pF td(on) tri Eon td(off) tfi Eoff VGE = 15 V, V CE = 600 V, IC = 25 A, R G = 47 Ω, L= 100 µH note 2, 3 75 65 3.6 420 45 2.4 110 100 ns ns mJ ns ns mJ td(on) tri Eon td(off) tfi Eoff Qg Qge Qgc VF VGE = 15 V, V CE = 600 V, IC = 50 A, R G = 47 Ω, L= 100 µH note 2, 3 trr Qrr IRM VGE = 15 V, V CE = 600V, I C = 25A IE= 10 A IE= 10 A IE= 10 A, IE= 10 A, IE= 10 A, IE= 10 A, IE= 10 A, IE= 10 A, T J = 25 °C T J = 100 °C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 800 A/us, T J= 125°C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 800 A/us, T J= 125°C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 800 A/us, T J= 125°C Notes (1) (2) (3) (4) MIN Pulse test, t ≤ 300 µ s, duty cycle δ ≤ 2% switching times and losses may increase for larger V CE and/or R G values or higher junction temperatures. switching losses include “tail” losses Microsemi Corp. does not manufacture the igbt die; contact company for details. 95 90 10 420 45 4.2 160 20 75 2.4 2 560 60 ns ns mJ ns ns mJ nC 3 TBD 60 TBD 800 TBD 22 V V ns ns nC nC A A