2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • • • • • • • • 500 Volts 8 Amps 1.2 Ω High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request P-CHANNEL ENHANCEMENT MODE POWER MOSFET/FRED Maximum Ratings @ 25°°C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100°C Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode Tj= 25°C Tj= SYMBOL MAX. UNIT BVDSS 500 Volts BVDGR VGS VGSM ID25 ID100 500 +/-20 +/-30 8 5 Volts Volts Volts Amps IDM IAR EAR EAS dv/dt 32 8 30 tbd 5.0 Amps Amps mJ mJ V/ns PD Tj Tstg IS ISM θJC 300 -55 to +150 -55 to +150 8 32 0.35 Watts °C °C Amps Amps °C/W @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Mechanical Outline DRAIN GATE SOURCE Datasheet# MSC0307A MSAEX8P50A Electrical Parameters @ 25°°C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Temperature Coefficient of the Threshold Voltage Gate-to-Source Leakage Current SYMBOL BVDSS Temperature Coefficient of the Drain-to-Source Resistance Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) VGS(th) ∆VGSth /∆TJ IDSS RDS(on) ∆RDSon/∆TJ gfs Ciss Coss Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd VSD Reverse Recovery Time (Body Diode) trr Reverse Recovery Charge Qrr VDS = VGS, ID =250 µA MAX 2.0 VGS = ± 20VDC, VDS = 0 T J = 25°C T J = 125°C VDS =0.8•BVDSS TJ = 25°C VGS = 0 V T J = 125°C VGS= 10V, I D= 4 A T J = 25°C I D= 4 A T J = 125°C VDS ≥ 10 V; I D = 8 A %/°C 4.5 VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 10 V, V DS = 250 V, ID = 4 A, R G = 2.00 Ω VGS = 10 V, V DS = 250V, I D = 4 A IF = IS, VGS = 0 V IF = 10 A, -di/dt = 100 A/µs, IF = 10 A, di/dt = 100 A/µs, ±100 ±200 200 1000 1.2 4 25 C 125 C 25 C 125 C UNIT V 0.12 Pulse test, t ≤ 300 µ s, duty cycle δ ≤ 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details. Datasheet# MSC0307A TYP. 500 0.054 Notes (1) (2) MIN ∆BVDSS/∆TJ IGSS Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) CONDITIONS VGS = 0 V, I D = 250 µA V %/°C nA µA Ω 2.2 0.6 %/°C 5 S 3400 450 175 33 27 35 35 130 32 64 1.2 pF 35 125 ns nC 1.5 V 50 tbd 250 tbd ns µC