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2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAEX8P50A
Features
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500 Volts
8 Amps
1.2 Ω
High voltage p-channel power mosfet with parallel fast switching, soft
recovery fred; complements MSAFX24N50A
Ultrafast body diode
Rugged polysilicon gate cell structure
Increased Unclamped Inductive Switching (UIS) capability
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request
P-CHANNEL
ENHANCEMENT MODE
POWER MOSFET/FRED
Maximum Ratings @ 25°°C (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
100°C
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
Tj= 25°C
Tj=
SYMBOL
MAX.
UNIT
BVDSS
500
Volts
BVDGR
VGS
VGSM
ID25
ID100
500
+/-20
+/-30
8
5
Volts
Volts
Volts
Amps
IDM
IAR
EAR
EAS
dv/dt
32
8
30
tbd
5.0
Amps
Amps
mJ
mJ
V/ns
PD
Tj
Tstg
IS
ISM
θJC
300
-55 to +150
-55 to +150
8
32
0.35
Watts
°C
°C
Amps
Amps
°C/W
@ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Mechanical Outline
DRAIN
GATE
SOURCE
Datasheet# MSC0307A
MSAEX8P50A
Electrical Parameters @ 25°°C (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Temperature Coefficient of the Threshold Voltage
Gate-to-Source Leakage Current
SYMBOL
BVDSS
Temperature Coefficient of the Drain-to-Source
Resistance
Forward Transconductance (1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
VGS(th)
∆VGSth /∆TJ
IDSS
RDS(on)
∆RDSon/∆TJ
gfs
Ciss
Coss
Crss
Td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
VSD
Reverse Recovery Time (Body Diode)
trr
Reverse Recovery Charge
Qrr
VDS = VGS, ID =250 µA
MAX
2.0
VGS = ± 20VDC, VDS = 0 T J = 25°C
T J = 125°C
VDS =0.8•BVDSS
TJ = 25°C
VGS = 0 V
T J = 125°C
VGS= 10V, I D= 4 A
T J = 25°C
I D= 4 A
T J = 125°C
VDS ≥ 10 V; I D = 8 A
%/°C
4.5
VGS = 0 V, V DS = 25 V, f = 1 MHz
VGS = 10 V, V DS = 250 V,
ID = 4 A, R G = 2.00 Ω
VGS = 10 V, V DS = 250V, I D = 4 A
IF = IS, VGS = 0 V
IF = 10 A,
-di/dt = 100 A/µs,
IF = 10 A,
di/dt = 100 A/µs,
±100
±200
200
1000
1.2
4
25 C
125 C
25 C
125 C
UNIT
V
0.12
Pulse test, t ≤ 300 µ s, duty cycle δ ≤ 2%
Microsemi Corp. does not manufacture the mosfet die; contact company for details.
Datasheet# MSC0307A
TYP.
500
0.054
Notes
(1)
(2)
MIN
∆BVDSS/∆TJ
IGSS
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
CONDITIONS
VGS = 0 V, I D = 250 µA
V
%/°C
nA
µA
Ω
2.2
0.6
%/°C
5
S
3400
450
175
33
27
35
35
130
32
64
1.2
pF
35
125
ns
nC
1.5
V
50
tbd
250
tbd
ns
µC