MSAFA75N10C N-CHANNEL ENHANCEMENT MODE POWER MOSFET SANTA ANA DIVISION PRODUCT PREVIEW New generation N-channel enhancement mode power MOSFET with rugged polysilicon gate structure and fast switching intrinsic rectifier. The TM very rugged Coolpack2 surface-mount package is lightweight, space saving and hermetically sealed for high reliability and/or military/space application. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATURES Ultrafast body diode Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Very low package inductance Very low thermal resistance Reverse polarity available upon request • • • • • • APPLICATIONS/BENEFITS APPLICATIONS/BENEFIT S • DC-DC converters • Motor controls • Uninterruptible Power Supply(UPS) • DC choppers • Synchronous rectification • Inverters W W W . Microsemi .COM DESCRIPTION MAXIMUM RATINGS @ 25°C (unless otherwise specified) Description Drain-to-Source Voltage (Gate Shorted to Source) Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current Tj= 25°C Tj= 100°C Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy (3) Total Power Dissipation @Tc=25°C Junction Temperature Range Symbol Max. Unit VDSS VGS VGSM ID25 ID100 IDM IAR EAR EAS PD 100 +/-30 +/-40 75 60 300 75 30 1500 540 -55 to +150 -55 to +150 75 300 0.23 Volts Volts Volts Amps Tj Storage Temperature Range Tstg Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case IS ISM θJC Amps Amps mJ mJ Watts °C °C Amps Amps °C/W MSAFA75N10C Copyright 2000 MSC1594.PDF 2000-09-20 Microsemi Santa Ana Division 2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 1 MSAFA75N10C N-CHANNEL ENHANCEMENT MODE POWER MOSFET SANTA ANA DIVISION PRODUCT PREVIEW Description Symbol Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Gate-to-Source Leakage Current Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage BVDSS Conditions Min VGS = 0 V, ID = 250 µA 100 IGSS VGS = ± 30 VDC, VDS = 0 IDSS VDS =0.8•BVDSS VGS = 0 V VGS(th) VDS = VGS, ID = 1 mA RDS(on) VGS= 10V, ID= 37.5A ID= 75A ID= 37.5A Static Drain-to-Source On-State Resistance (1) Typ. Unit V ±100 250 1000 nA 4.0 0.019 V Ω 0.02 0.035 5100 1900 800 6120 2660 1200 pF TJ = 25°C TJ = 125°C 2.0 TJ = 25°C TJ = 25°C TJ = 125°C Max µA Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time td(on) tr td(off) tf VGS = 15 V, VDS = 50 V, ID = 37.5 A, RG = 1.6 Ω 16 40 50 20 32 40 75 40 ns Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Qg(on) Qgs Qgd VGS = 10 V, VDS = 50V, ID = 37.5A 200 40 92 300 60 180 nC 1.3 V Body Diode Forward Voltage (1) VSD Is = 75A, VGS = 0 V Reverse Recovery Time (Body Diode) trr IF = 10 A, di/dt = 100 A/µs 200 ns Reverse Recovery Charge Qrr IF = 10 A, di/dt = 100 A/µs 1.4 µC W W W . Microsemi .COM ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) ELECTRICALS Copyright 2000 MSC1594.PDF 2000-09-20 Microsemi Santa Ana Division 2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 2 MSAFA75N10C SANTA ANA DIVISION N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT PREVIEW CoolPackTM2 Note: Pin-out shown for standard polarity W W W . Microsemi .COM Mechanical Outline PACKAGE DATA Copyright 2000 MSC1594.PDF 2000-09-20 Microsemi Santa Ana Division 2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 3 MSAFA75N10C SANTA ANA DIVISION N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT PREVIEW W W W . Microsemi .COM NOTES Copyright 2000 MSC1594.PDF 2000-09-20 Microsemi Santa Ana Division 2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989 Page 4