MICROSEMI MSAFA75N10C

MSAFA75N10C
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
SANTA ANA DIVISION
PRODUCT PREVIEW
New generation N-channel enhancement mode power MOSFET with
rugged polysilicon gate structure and fast switching intrinsic rectifier. The
TM
very rugged Coolpack2
surface-mount package is lightweight, space
saving and hermetically sealed for high reliability and/or military/space
application.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Ultrafast body diode
Increased Unclamped
Inductive Switching (UIS)
capability
Hermetically sealed, surface
mount power package
Very low package inductance
Very low thermal resistance
Reverse polarity available
upon request
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APPLICATIONS/BENEFITS
APPLICATIONS/BENEFIT S
•
DC-DC converters
•
Motor controls
•
Uninterruptible Power
Supply(UPS)
•
DC choppers
•
Synchronous rectification
•
Inverters
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DESCRIPTION
MAXIMUM RATINGS @ 25°C (unless otherwise specified)
Description
Drain-to-Source Voltage (Gate Shorted to Source)
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25°C
Tj= 100°C
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy (3)
Total Power Dissipation @Tc=25°C
Junction Temperature Range
Symbol
Max.
Unit
VDSS
VGS
VGSM
ID25
ID100
IDM
IAR
EAR
EAS
PD
100
+/-30
+/-40
75
60
300
75
30
1500
540
-55 to
+150
-55 to
+150
75
300
0.23
Volts
Volts
Volts
Amps
Tj
Storage Temperature Range
Tstg
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
IS
ISM
θJC
Amps
Amps
mJ
mJ
Watts
°C
°C
Amps
Amps
°C/W
MSAFA75N10C
Copyright  2000
MSC1594.PDF 2000-09-20
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
MSAFA75N10C
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
SANTA ANA DIVISION
PRODUCT PREVIEW
Description
Symbol
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Gate Threshold Voltage
BVDSS
Conditions
Min
VGS = 0 V, ID = 250 µA
100
IGSS
VGS = ± 30 VDC, VDS = 0
IDSS
VDS =0.8•BVDSS
VGS = 0 V
VGS(th)
VDS = VGS, ID = 1 mA
RDS(on)
VGS= 10V, ID= 37.5A
ID= 75A
ID= 37.5A
Static Drain-to-Source On-State Resistance (1)
Typ.
Unit
V
±100
250
1000
nA
4.0
0.019
V
Ω
0.02
0.035
5100
1900
800
6120
2660
1200
pF
TJ = 25°C
TJ = 125°C
2.0
TJ = 25°C
TJ = 25°C
TJ = 125°C
Max
µA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VGS = 15 V, VDS = 50 V,
ID = 37.5 A, RG = 1.6 Ω
16
40
50
20
32
40
75
40
ns
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Qg(on)
Qgs
Qgd
VGS = 10 V, VDS = 50V, ID = 37.5A
200
40
92
300
60
180
nC
1.3
V
Body Diode Forward Voltage (1)
VSD
Is = 75A, VGS = 0 V
Reverse Recovery Time (Body Diode)
trr
IF = 10 A, di/dt = 100 A/µs
200
ns
Reverse Recovery Charge
Qrr
IF = 10 A, di/dt = 100 A/µs
1.4
µC
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ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified)
ELECTRICALS
Copyright  2000
MSC1594.PDF 2000-09-20
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
MSAFA75N10C
SANTA ANA DIVISION
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT PREVIEW
CoolPackTM2
Note: Pin-out shown for
standard polarity
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Mechanical Outline
PACKAGE DATA
Copyright  2000
MSC1594.PDF 2000-09-20
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 3
MSAFA75N10C
SANTA ANA DIVISION
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT PREVIEW
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NOTES
Copyright  2000
MSC1594.PDF 2000-09-20
Microsemi
Santa Ana Division
2830 S. Fairview Street, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 4