2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX11P50A Features • • • • • • • • 500 Volts 11 Amps 750 mΩ Ω High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request P-CHANNEL ENHANCEMENT MODE POWER MOSFET Maximum Ratings @ 25°°C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100°C Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode Tj= 25°C Tj= SYMBOL MAX. UNIT BVDSS 500 Volts BVDGR VGS VGSM ID25 ID100 500 +/-20 +/-30 11 8 Volts Volts Volts Amps IDM IAR EAR EAS dv/dt 44 11 30 tbd 5.0 Amps Amps mJ mJ V/ns PD Tj Tstg IS ISM θJC 300 -55 to +150 -55 to +150 11 44 0.25 Watts °C °C Amps Amps °C/W @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Mechanical Outline DRAIN GATE SOURCE Datasheet# MSC0308A MSAFX11P50A Electrical Parameters @ 25°°C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Temperature Coefficient of the Threshold Voltage Gate-to-Source Leakage Current SYMBOL BVDSS Temperature Coefficient of the Drain-to-Source Resistance Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) VGS(th) ∆VGSth /∆TJ IDSS RDS(on) ∆RDSon/∆TJ gfs Ciss Coss Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd VSD Reverse Recovery Time (Body Diode) trr Reverse Recovery Charge Qrr VDS = VGS, ID =250 µA MAX 2.0 VGS = ± 20VDC, VDS = 0 T J = 25°C T J = 125°C VDS =0.8•BVDSS TJ = 25°C VGS = 0 V T J = 125°C VGS= 10V, I D= 6A T J = 25°C I D= 6A T J = 125°C VDS ≥ 10 V; I D = 11 A %/°C 4.5 VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 10 V, V DS = 250 V, ID = 6 A, R G = 2.00 Ω VGS = 10 V, V DS = 250V, I D = 6 A IF = IS, VGS = 0 V IF = 10 A, -di/dt = 100 A/µs, IF = 10 A, di/dt = 100 A/µs, ±100 ±200 200 1000 0.75 5 25 C 125 C 25 C 125 C UNIT V 0.12 Pulse test, t ≤ 300 µ s, duty cycle δ ≤ 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details. Datasheet# MSC0308A TYP. 500 0.054 Notes (1) (2) MIN ∆BVDSS/∆TJ IGSS Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) CONDITIONS VGS = 0 V, I D = 250 µA V %/°C nA µA Ω 1.4 0.6 %/°C 9 S 4700 430 135 33 27 35 35 160 50 95 pF ns nC 3 V 500 tbd tbd tbd ns µC