MICROSEMI MSAER12N50A

2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MSAER12N50A
MSAFR12N50A
Features
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•
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500 Volts
12 Amps
400 mΩ
Ω
Ultrafast rectifier in parallel with the body diode (MSAE type only)
Rugged polysilicon gate cell structure
Increased Unclamped Inductive Switching (UIS) capability
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
Maximum Ratings @ 25°°C (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ ≥ 25°C
Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
100°C
Peak Drain Current, pulse width limited by TJmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
Tj= 25°C
Tj=
SYMBOL
MAX.
UNIT
BVDSS
500
Volts
BVDGR
VGS
VGSM
ID25
ID100
500
+/-20
+/-30
12
8
Volts
Volts
Volts
Amps
IDM
IAR
EAR
EAS
dv/dt
48
12
tbd
8
3.5
Amps
Amps
mJ
mJ
V/ns
PD
Tj
Tstg
IS
ISM
θJC
300
-55 to +150
-55 to +150
12
48
0.4
Watts
°C
°C
Amps
Amps
°C/W
@ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
Mechanical Outline
DRAIN
GATE
SOURCE
Datasheet# MSC0266B
MSAER12N50A
MSAFR12N50A
Electrical Parameters @ 25°°C (unless otherwise specified)
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Current
SYMBOL
BVDSS
VGS(th)
IDSS
RDS(on)
Forward Transconductance (1)
gfs
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
Ciss
Coss
Crss
Td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
VSD
Reverse Recovery Time (Body Diode)
trr
Reverse Recovery Charge
Qrr
TYP.
MAX
500
VDS = VGS, ID = 1 mA
VGS = ± 20V DC, VDS = 0 T J = 25°C
T J = 125°C
VDS =0.8•BVDSS
TJ = 25°C
VGS = 0 V
T J = 125°C
VGS= 10V, I D= 8A
T J = 25°C
I D= 12A
T J = 25°C
I D= 8A
T J = 125°C
VDS ≥ 15 V; I D = 8 A
2.0
IF = 10 A,
-di/dt = 100 A/ µs,
IF = 10 A,
di/dt = 100 A/ µs,
Pulse test, t ≤ 300 µ s, duty cycle δ ≤ 2%
Microsemi Corp. does not manufacture the mosfet die; contact factory for details
MSAE
MSAF
MSAE
MSAF
MSAE
MSAF
4.0
±100
±200
25
250
0.400
0.500
V
nA
µA
Ω
0.800
S
2700
600
240
VGS = 10 V, V DS = 250 V,
ID = 12 A, R G = 2.35 Ω
IF = IS, VGS = 0 V
V/°C
5.5
VGS = 0 V, V DS = 25 V, f = 1 MHz
VGS = 10 V, V DS = 250V, I D = 12A
UNIT
V
0.78
Notes
(1)
(2)
MIN
∆BVDSS/∆TJ
IGSS
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
CONDITIONS
VGS = 0 V, I D = 1000 µA
55
5
27
pF
35
190
170
130
120
19
70
1.2
1.7
70
1600
tbd
14
ns
nC
V
ns
µC