Data Sheet 10V Drive Nch MOSFET R6010ANX Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 12.0 2.8 0.8 (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. 5) Parallel use is easy. 2.54 2.54 2.6 0.75 (1) (2) (3) Application Switching Packaging specifications Type Package Code Basic ordering unit (pieces) R6010ANX Inner circuit Bulk 500 ∗1 Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Limits Unit VDSS 600 V VGSS ID *3 IDP *1 30 10 V A A A A IS ISP *3 Avalanche current IAS *2 Avalanche energy EAS Power dissipation PD Channel temperature Range of storage temperature (1) Gate (2) Drain (3) Source 40 10 *2 40 5 6.5 A mJ *4 50 W Tch Tstg 150 55 to 150 C C Symbol Rth (ch-c) Limits 2.5 Unit C / W *1 (1) (2) (3) 1 BODY DIODE *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, Starting, T ch=25C *3 Limited only by maximum temperature allowed. *4 TC=25C Thermal resistance Parameter Channel to Case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A Data Sheet R6010ANX Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Max. Unit - - 100 nA VGS=30V, VDS=0V 600 - - V ID=1mA, VGS=0V IGSS Drain-source breakdown voltage V(BR)DSS Conditions Typ. IDSS - - 100 A VDS=600V, VGS=0V VGS (th) 2.5 - 4.5 V VDS=10V, ID=1mA RDS (on)* - 0.43 0.56 ID=5A, VGS=10V l Yfs l* 3.0 - - S ID=5A, VDS=10V Input capacitance Ciss - 1050 - pF VDS=25V Output capacitance Coss - 720 - pF VGS=0V Reverse transfer capacitance Crss - 35 - pF f=1MHz Turn-on delay time td(on) * tr * - 25 - ns VDD 300V, ID=5A - 30 - ns VGS=10V td(off) * tf * - 70 - ns RL=60 - 30 - ns RG=10 Qg * Qgs * Qgd * - 25 - nC VDD 300V, ID=10A - 5 12 - nC nC VGS=10V Min. - Typ. - Max. 1.5 Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Unit V Conditions Is=10A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A Data Sheet R6010ANX Electrical characteristic curves (Ta=25C) Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 3 10 Ta=25°C Pulsed Ta=25°C Pulsed VGS=10.0V VGS=7.0V Drain Current : ID [A] Drain Current : ID [A] 2 VGS=10.0V 8 VGS=7.0V VGS=6.0V VGS=5.0V 1 VGS=6.0V 6 VGS=5.0V 4 2 VGS=4.0V VGS=4.0V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 8 10 5 VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] VDS=10V ID=1mA pulsed 10 Drain Currnt : ID [A] 6 Fig.4 Gate Threshold Voltage vs. Channel Temperature 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 4 3 2 1 0 0.001 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Gate-Source Voltage : VGS [V] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1.2 10 VGS=10V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [W] Static Drain-Source On-State Resistance RDS(on) [W] 4 Drain-Source Voltage : VDS [V] 1 0.1 VGS=10V pulsed 1 ID=10A 0.8 0.6 ID=5A 0.4 0.2 0.01 0 0.1 1 10 100 -50 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] 3/6 2011.10 - Rev.A Data Sheet R6010ANX Fig.8 Source Current vs. Source-Drain Voltage Fig.7 Forward Transfer Admittance vs. Drain Current 100 100 VGS=0V pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Source Current : Is [A] Forward Transfer Admittance Yfs [S] VDS=10V pulsed 1 1 0.1 0.1 0.01 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] Drain Current : ID [A] Fig.10 Switching Characteristics Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1.0 10000 0.8 tf 1000 Switching Time : t [ns] Static Drain-Source On-State Resistance RDS(on) [W] Ta=25°C Pulsed 0.6 ID=10A 0.4 ID=5A 100 td(off) td(on) 10 0.0 1 0 2 4 6 8 10 12 14 16 18 20 0.01 0.1 Gate-Source Voltage : VGS [V] 1 10 100 Drain Current : ID [A] Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage 100000 10 Ta=25°C f=1MHz VGS=0V Ta=25°C VDD=300V ID=10A Pulsed 10000 Capacitance : C [pF] 8 Gate-Source Voltage : VGS [V] VDD≒300V VGS=10V RG=10Ω Ta=25°C Pulsed tr 0.2 6 4 Coss 1000 Ciss 100 Crss 10 2 1 0 0 5 10 15 20 0.01 25 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.1 1 10 100 1000 10000 Drain-Source Voltage : VDS [V] 4/6 2011.10 - Rev.A Data Sheet R6010ANX Fig.14 Maximum Safe Operating Area Fig.13 Reverse Recovery Time vs. Source Current 100 Ta=25°C Vgs=0V di/dt=100A/us Pulsed 10 Drain Current : ID [ A ] Reverse Recovery Time : trr [ns] 1000 100 PW = 100μs Operation in this area is limited by RDS(on) (VGS = 10V) 1 PW = 1ms PW = 10ms 0.1 Ta=25°C Single Pulse 10 0.01 0 1 10 100 0.1 Source Current : IS [A] 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Normalized Transient Thermal Resistance : r（t） Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Ta=25°C Single Pulse 1 0.1 0.01 0.001 Rth(ch-a)=52.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A Data Sheet R6010ANX Measurement circuits Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) ton Fig.1-1 Switching Time Measurement Circuit 90% td(off) tr tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD RG Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Measurement Circuit VGS IAS VDS V(BR)DSS D.U.T. RG L VDD IAS VDD EAS = Fig.3-1 Avalanche Measurement Circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 L IAS 2 V(BR)DSS V(BR)DSS - VDD Fig.3-2 Avalanche Waveform 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A