ROHM RSD050N06

Data Sheet
4V Drive Nch MOSFET
RSD050N06
 Dimensions (Unit : mm)
Structure
Silicon N-channel MOSFET
CPT3
6.5
5.1
(SC-63)
<SOT-428>
2.3
2.5
0.9
1.5
5.5
Features
1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
3) Parallel use is easy.
9.5
1.5
0.5
0.8Min.
0.75
0.65
0.9
(1)
2.3
(2)
(3)
2.3
0.5
1.0
Applications
Switching
Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
 Inner circuit
CPT3
TL
2500
∗1
∗2
(1) Gate
(2) Drain
(3) Source
Absolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Symbol
Limits
Unit
VDSS
60
20
5.0
15
5.0
V
V
A
A
A
15
A
VGSS
ID
IDP *1
IS
ISP
*1
Power dissipation
PD
*2
15
W
Channel temperature
Range of storage temperature
Tch
Tstg
150
55 to +150
°C
°C
Symbol
Rth (ch-c) *
Limits
8.33
Unit
°C / W
Pulsed
1 ESD Protection Diode
2 Body Diode
(1)
(2)
(3)
*1 Pw10s, Duty cycle1%
*2 Tc=25°C
Thermal resistance
Parameter
Channel to Case
* T c=25C
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1/6
2011.02 - Rev.A
Data Sheet
RSD050N06
Electrical characteristics (Ta=25°C)
Parameter
Gate-source leakage
Symbol
IGSS
Drain-source breakdown voltage V(BR)DSS
Min.
Typ.
Max.
Unit
-
-
10
A
VGS=20V, VDS=0V
60
-
-
V
ID=1mA, VGS=0V
Conditions
IDSS
-
-
1
A
VDS=60V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
3.0
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
*
RDS (on)
-
78
109
ID=5.0A, VGS=10V
Forward transfer admittance
l Yfs l*
3.5
-
-
S
ID=5.0A, VDS=10V
Input capacitance
Ciss
-
290
-
pF
VDS=10V
Output capacitance
Coss
-
90
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
35
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
8
-
ns
ID=2.5A, VDD 30V
Zero gate voltage drain current
Rise time
-
94
131
m ID=5.0A, VGS=4.5V
-
100
140
ID=5.0A, VGS=4.0V
tr *
-
17
-
ns
VGS=10V
td(off) *
-
26
-
ns
RL=12
tf *
-
8
-
ns
RG=10
Total gate charge
Qg *
-
8.0
-
nC
VDD
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
1.4
1.4
-
nC
nC
ID=5.0A
VGS=10V
Turn-off delay time
Fall time
30V
*Pulsed
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
Conditions
V
Is=5.0A, VGS=0V
*Pulsed
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2/6
2011.02 - Rev.A
Data Sheet
RSD050N06
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
Fig.2 Typical Output Characteristics (Ⅱ)
15.0
15.0
Ta=25°C
pulsed
Ta=25°C
pulsed
12.5
12.5
VGS=10.0V
10.0
VGS=4.5V
VGS=4.5V
Drain Current : ID [A]
Drain Current : ID [A]
VGS=10.0V
VGS=4.0V
VGS=3.0V
7.5
5.0
2.5
10.0
VGS=4.0V
7.5
VGS=3.5V
5.0
2.5
0.0
VGS=3.0V
0.0
0
0.2
0.4
0.6
0.8
1
0
2
Drain-Source Voltage : VDS [V]
8
10
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
1000
1000
VGS=10V
pulsed
Ta=25°C
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
6
Drain-Source Voltage : VDS [V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.0V
VGS=4.5V
VGS=10V
100
10
0.01
0.1
1
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
0.01
10
Drain Current : ID [A]
0.1
1
10
Drain Current : ID [A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
1000
1000
VGS=4.0V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
VGS=4.5V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
4
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
0.01
0.1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
0.01
10
Drain Current : ID [A]
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100
0.1
1
10
Drain Current : ID [A]
3/6
2011.02 - Rev.A
Data Sheet
RSD050N06
Fig.7 Forward Transfer Admittance vs. Drain Current
Fig.8 Typical Transfer Characteristics
10
10
VDS=10V
pulsed
VDS=10V
pulsed
1
0.1
Drain Currnt : ID [A]
Forward Transfer Admittance
Yfs [S]
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.001
0.0001
0.01
0.01
0.00001
0.1
1
10
0.0
0.5
1.0
1.5
2.0
2.5
10
1000
VGS=0V
pulsed
Ta=25°C
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
1
Source Current : Is [A]
3.5
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fif.9 Source Current vs. Source-Drain Voltage
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
0.0001
ID=2.5A
500
ID=5.0A
0
0.0
0.5
1.0
0
2
4
6
8
10
12
14
16
18
20
Gate-Source Voltage : VGS [V]
Source-Drain Voltage : VSD [V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
1000
12
VDD≒30V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
100
td(off)
td(on)
10
Ta=25°C
VDD=30V
ID=5A
Pulsed
10
Gate-Source Voltage : VGS [V]
tf
Switching Time : t [ns]
3.0
Gate-Source Voltage : VGS [V]
Drain Current : ID [A]
8
6
4
2
tr
1
0
0.01
0.1
1
10
0
4
6
8
10
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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2
4/6
2011.02 - Rev.A
Data Sheet
RSD050N06
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Area
1000
100
Ta=25°C
f=1MHz
VGS=0V
Operation in this area is limited by RDS(on)
( VGS = 10V )
Drain Current : ID [ A ]
Capacitance : C [pF]
10
Ciss
100
Coss
PW = 100μs
1
PW = 1ms
PW = 10ms
0.1
DC Operation
Tc=25°C
Single Pulse
Crss
10
0.01
0.01
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage : VDS [ V ]
Drain-Source Voltage : VDS [V]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
Normalized Transient Thermal Resistance : r(t)
10
Tc=25°C
Single Pulse
1
Rth(ch-a)=8.33°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
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5/6
2011.02 - Rev.A
Data Sheet
RSD050N06
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
Qg
RL
IG(Const.)
VGS
D.U.T.
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
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Fig.2-2 Gate Charge Waveform
6/6
2011.02 - Rev.A
Notice
Notes
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R1120A