IRF IRFZ44NL

PD - 94153
Advanced Process Technology
Surface Mount (IRFZ44NS)
l Low-profile through-hole (IRFZ44NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
IRFZ44NS
IRFZ44NL
l
HEXFET® Power MOSFET
l
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
D
VDSS = 55V
RDS(on) = 0.0175Ω
G
ID = 49A
S
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for lowprofile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
49
35
160
3.8
94
0.63
± 20
25
9.4
5.0
-55 to + 175
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
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Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
1.5
40
°C/W
1
03/13/01
IRFZ44NS/IRFZ44NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Min.
55
–––
–––
2.0
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy‚
–––
–––
–––
–––
V(BR)DSS
IDSS
IGSS
Drain-to-Source Leakage Current
Typ.
–––
0.058
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
60
44
45
7.5
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
17.5 mΩ VGS = 10V, ID = 25A „
4.0
V
VDS = V GS, ID = 250µA
–––
S
VDS = 25V, ID = 25A„
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
63
ID = 25A
14
nC VDS = 44V
23
VGS = 10V, See Fig. 6 and 13
–––
VDD = 28V
–––
ID = 25A
ns
–––
RG = 12Ω
–––
VGS = 10V, See Fig. 10 „
–––
nH Between lead,
and center of die contact
1470 –––
VGS = 0V
360 –––
VDS = 25V
88 –––
pF
ƒ = 1.0MHz, See Fig. 5
530… 150† mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
IS
I SM
VSD
trr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
49
––– –––
showing the
A
G
integral reverse
––– ––– 160
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 25A, VGS = 0V „
––– 63
95
ns
TJ = 25°C, IF = 25A
––– 170 260
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L = 0.48mH
RG = 25Ω, IAS = 25A. (See Figure 12)
ƒ ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRFZ44NS/IRFZ44NL
1000
BO TTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-S ource C urrent (A )
D
I , D rain-to-S ou rc e C urre nt (A )
D
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TO P
100
4 .5 V
10
100
4.5V
10
2 0µ s P U L S E W ID T H
TTJC==25°C
25 °C
1
0.1
1
A
10
20 µ s P U LS E W ID TH
TTCJ == 175°C
1 75 °C
1
100
0.1
1
V D S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
2.5
R D S(o n) , D ra in-to-S o urc e O n R e s is tan c e
(N orm aliz ed )
I D , D ra in -to -S ourc e C urre nt (A )
1000
TJ = 2 5 °C
TJ = 1 7 5 °C
10
V DS = 25V
2 0 µ s P U LS E W ID TH
1
4
5
6
7
8
9
V G S , G a te-to-S ource Vo ltag e (V)
Fig 3. Typical Transfer Characteristics
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A
100
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
100
10
10
A
ID = 41A
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160 180
T J , J unc tion T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFZ44NS/IRFZ44NL
20
C , Capacitance (pF)
2000
C iss
V GS
C is s
C rs s
C o ss
=
=
=
=
0V ,
f = 1M H z
C g s + C g d , Cd s S H O R T E D
C gd
C d s + C gd
V G S , G ate-to-S ource V oltage (V )
2500
I D = 25 A
V D S = 44 V
V D S = 28 V
16
12
1500
C oss
1000
C rss
500
0
10
4
FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0
A
1
8
0
100
V D S , D rain-to-S ourc e V oltage (V )
20
30
40
50
60
A
70
Q G , T otal G ate C harge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R D S (o n)
I D , Drain C urrent (A )
I S D , R everse Drain C urrent (A )
10
100
T J = 1 75 °C
TJ = 25 °C
10
V G S = 0V
1
0.5
1.0
1.5
2.0
2.5
V S D , S ource-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
3.0
100
10µ s
100µ s
10
1m s
10m s
T C = 25 °C
T J = 17 5°C
S ing le P u lse
1
1
A
10
100
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
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IRFZ44NS/IRFZ44NL
RD
V DS
VGS
50
D.U.T.
RG
+
-V DD
I D , Drain Current (A)
40
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
90%
10
0
25
50
75
100
125
TC , Case Temperature
150
10%
VGS
175
( °C)
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
PDM
0.05
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFZ44NS/IRFZ44NL
VDS
D.U.T.
RG
+
V
- DD
IAS
10 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E A S , S ingle P ulse A valanche E nergy (m J)
500
L
TO P
B O TTO M
400
ID
1 0A
18 A
25A
300
200
100
0
V D D = 25 V
25
A
50
75
100
125
150
175
S tarting T J , J unc tion T em perature (°C )
VDS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
QGD
D.U.T.
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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+
V
- DS
IRFZ44NS/IRFZ44NL
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
V DD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFZ44NS/IRFZ44NL
D2Pak Package Outline
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
3
15 .4 9 (.6 10)
14 .7 3 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
3X
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
8.89 (.3 50 )
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
2.5 4 (.100 )
2X
Part Marking Information
D2Pak
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
8
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRFZ44NS/IRFZ44NL
Package Outline
TO-262 Outline
Part Marking Information
TO-262
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9
IRFZ44NS/IRFZ44NL
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .60 (.06 3)
1 .50 (.05 9)
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
0 .3 68 (.0 1 4 5 )
0 .3 42 (.0 1 3 5 )
1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TR L
10 .9 0 (.42 9)
10 .7 0 (.42 1)
1 .75 (.06 9 )
1 .25 (.04 9 )
4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)
16 .10 (.63 4 )
15 .90 (.62 6 )
F E E D D IRE C TIO N
13.50 (.532 )
12.80 (.504 )
2 7.4 0 (1.079)
2 3.9 0 (.9 41)
4
33 0.00
(1 4.1 73)
MA X.
60.00 (2.3 62)
MIN .
NO TES :
1. C O M F O R M S TO E IA -4 18.
2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER .
3. D IM E N S IO N ME A S U R E D @ H U B .
4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .
26 .40 (1.03 9)
24 .40 (.961 )
3
3 0.40 (1.1 97)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
10
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