IRF IRL3103D1

PD 9.1608C
IRL3103D1
FETKYTM MOSFET & SCHOTTKY RECTIFIER
l
l
l
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Copackaged HEXFET® Power MOSFET
and Schottky Diode
Generation 5 Technology
Logic Level Gate Drive
Minimize Circuit Inductance
Ideal For Synchronous Regulator Application
D
VDSS = 30V
RDS(on) = 0.014Ω
G
ID = 64A
S
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10Vƒ
Continuous Drain Current, VGS @ 10Vƒ
Pulsed Drain Current ƒ
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
64
45
220
2.0
89
0.56
± 16
-55 to + 150
Units
A
W
W
W/°C
V
300 (1.6mm from case )
10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
1.4
62
°C/W
12/16/97
IRL3103D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
–––
–––
–––
1.0
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.037
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.0
210
20
54
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
–––
–––
–––
–––
1900
810
240
3500
V(BR)DSS
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA„
0.014
VGS = 10V, ID = 34A ‚
Ω
0.019
VGS = 4.5V, ID = 28A ‚
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 32Aƒ
0.10
VDS = 30V, VGS = 0V
mA
22
VDS = 24V, VGS = 0V, TJ = 125°C
100
VGS = 16V
nA
-100
VGS = -16V
43
ID = 32A
14
nC VDS = 24V
23
VGS = 4.5V, See Fig. 6 ‚
–––
VDD = 15V
–––
ID = 32A
ns
–––
RG = 3.4Ω, VGS =4.5V
–––
RD = 0.43 Ω, ‚ƒ
Between lead,
nH
–––
6mm (0.25in.)
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
VDS = 25V
pF
–––
ƒ = 1.0MHz, See Fig. 5
–––
VGS = 0V, VDS = 0V
D
S
Body Diode & Schottky Diode Ratings and Characteristics
Parameter
IF (AV)
( Schottky)
ISM
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
VSD1
VSD2
trr
Qrr
ton
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Min. Typ. Max. Units
Conditions
MOSFET symbol
2.0
––– –––
showing the
A
integral reverse
––– ––– 220
p-n junction and Schottky diode.
––– ––– 1.3
V
TJ = 25°C, IS = 32A, VGS = 0V ‚
––– ––– 0.50
V
TJ = 25°C, IS = 1.0A, VGS = 0V ‚
––– 51
77
ns
TJ = 25°C, IF = 32A
––– 49
73
nC di/dt = 100A/µs ‚
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
G
S
ƒ Uses IRL3103 data and test conditions
IRL3103D1
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
2.5V
20µ s P U LS E W ID TH
T J = 25°C
1
0.1
1
10
BOTTOM
100
10
2.5V
20µs PULSE WIDTH
T J = 150°C
1
A
100
0.1
1
V D S , D rain-to-S ource V oltage (V )
I , Source-to-Drain Current (A)
S
TOP
BOTTOM
30
VGSB
10V
8.0V
6.0V
4.0V
2.0V
0.0V
TOP
20
10
0.0V
20µs PULSE WIDTH
TJ = 25°C
0
0.2
0.4
0.6
0.8
A
100
Fig 2. Typical Output Characteristics
I , Source-to-Drain Current (A)
S
30
10
V D S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.0
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
2.5V
TOP
ID , Drain-to-Source Current (A)
ID , D rain-to-S ource C urrent (A )
TOP
1.0
V S D , Source-to-Drain Voltage (V)
Fig 3. Typical Reverse Output Characteristics
A
BOTTOM
VGS
10V
8.0V
6.0V
4.0V
2.0V
0.0V
20
10
0.0V
20µs PULSE WIDTH
T J = 150°C
0
0
0.2
0.4
0.6
0.8
V S D , Source-to-Drain Voltage (V)
Fig 4. Typical Reverse Output Characteristics
A
IRL3103D1
VGS =
Ciss =
Crss =
Coss =
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
3000
Ciss
2000
Coss
1000
Crss
15
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
4000
0
ID = 32A
VDS = 24V
VDS = 15V
12
9
6
3
0
1
10
0
100
20
60
80
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
70
1000
I D , Drain-to-Source Current (A)
60
I D , Drain Current (A)
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
50
40
30
20
10
0
TJ = 25°C
100
T J = 150°C
10
V D S = 15V
20µs PULSE WIDTH
1
25
50
75
100
125
150
TC , Case Temperature ( ° C)
Fig 7. Maximum Drain Current Vs.
Case Temperature
175
2.0
3.0
4.0
5.0
6.0
7.0
8.0
V G S , Gate-to-Source Voltage (V)
Fig 8. Typical Transfer Characteristics
9.0
A
IRL3103D1
R D S (on ) , D rain-to-S ource O n R esistance
(N orm alized)
2.0
I D = 56A
1.5
1.0
0.5
V G S = 10V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 9. Normalized On-Resistance
Vs. Temperature
T h erm al R es p on s e (Z th J C )
10
1
D = 0.50
0.20
0.10
0.1
PD M
0.05
t
0.02
0.01
t2
S IN G LE P U LS E
(TH E R M A L R E S P O N S E )
0.01
0.00001
1
N o te s:
1 . D u ty fa c to r D = t
1
/ t
2
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
t 1 , R e c ta n g u la r P u lse D u ra tio n (s e c)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
IRL3103D1
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3)
2.62 (.10 3)
10.54 (.415)
10.29 (.405)
3.7 8 (.149 )
3.5 4 (.139 )
-A -
-B4.69 (.185 )
4.20 (.165 )
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.60 0)
14.84 (.58 4)
1.15 (.04 5)
M IN
1
2
14.09 (.55 5)
13.47 (.53 0)
4.06 (.160)
3.55 (.140)
3X
3X
LE A D A S S IG N M E N T S
1 - G ATE
2 - D R A IN
3 - SOURCE
4 - D R A IN
3
1 .40 (.0 55)
1 .15 (.0 45)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
2.54 (.100)
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2X
NO TES:
1 D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14.5M , 1 982.
2 C O N TR O LLIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E T O -2 20A B .
4 H E A T S IN K & LE A D M E A S U R E M E N T S D O NO T IN C LU D E B U R R S .
Part Marking Information
TO-220AB
: IS
TH IS A
ISN AIR
N F IR
E X AEMXPA LMEP :L ETH
1 0F1100 1 0
W ITH
W ITH
A S SAESMS BE LMYB L Y
C EO D9EB 19MB 1 M
L O TL OCTO D
A
INRTE
A TNIO
IN TE
N ARTNIO
A LN A L
C IE
T IFRIE R
R E CRTEIF
IR F IR
1 0F1100 1 0
L O GL O G O
9 2 4962 4 6
9 B 9 B1 M 1 M
A S SAESMSBELMYB L Y
C EO D E
L O TL O TC O D
A
NB
U EMRB E R
P A RPTA RNTU M
D A TE
D A TE
C O DC EO D E
(Y Y(Y
W YWW) W )
Y Y Y=Y Y=E AYRE A R
W WW W
= W= EW
E KE E K
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Data and specifications subject to change without notice.
12/97