PD - 97067 IRLR8713PbF IRLU8713PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use HEXFET® Power MOSFET VDSS RDS(on) max Qg 25V 4.8m: 17.4nC D Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free D G D S G D-Pak IRLR8713PbF D S I-Pak IRLU8713PbF G D S Gate Drain Source Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 25 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 100 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 72 IDM Pulsed Drain Current 410 PD @TC = 25°C Maximum Power Dissipation PD @TC = 100°C Maximum Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range c f f g g A W 81 40 0.54 -55 to + 175 Soldering Temperature, for 10 seconds W/°C °C 300 (1.6mm from case) Thermal Resistance Parameter h RθJC Junction-to-Case RθJA Junction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient h gh Typ. Max. ––– 1.86 ––– 50 ––– 110 Units °C/W Notes through are on page 10 www.irf.com 1 12/7/05 IRLR/U8713PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance 25 ––– ––– V ––– 16 ––– 3.8 ––– mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 21A 4.8 ––– 5.0 6.3 e e Gate Threshold Voltage 1.35 1.85 2.35 ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -7.0 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 0V, ID = 250µA VGS = 4.5V, ID = 17A VGS(th) IGSS Conditions Min. Typ. Max. Units BVDSS V µA VDS = VGS, ID = 50µA VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V gfs Forward Transconductance 79 ––– ––– Qg Total Gate Charge ––– 17.4 26 S Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.0 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.2 ––– Qgd Gate-to-Drain Charge ––– 5.8 ––– ID = 17A Qgodr Gate Charge Overdrive ––– 5.4 ––– See Fig.16 VDS = 13V, ID = 17A VDS = 13V nC VGS = 4.5V Qsw Switch Charge (Qgs2 + Qgd) ––– 8.0 ––– Qoss RG Output Charge ––– 8.6 ––– nC Gate Resistance ––– 0.9 1.6 Ω td(on) Turn-On Delay Time ––– 14 ––– VDD = 13V, VGS = 4.5V tr Rise Time ––– 24 ––– ID = 17A td(off) Turn-Off Delay Time ––– 12 ––– tf Fall Time ––– 5.9 ––– Ciss Input Capacitance ––– 2240 ––– Coss Output Capacitance ––– 580 ––– Crss Reverse Transfer Capacitance ––– 270 ––– VDS = 10V, VGS = 0V e ns Clamped Inductive Load pF VDS = 13V VGS = 0V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy c d c Typ. Max. Units ––– 190 mJ ––– 17 A ––– 8.1 mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– ISM (Body Diode) Pulsed Source Current ––– ––– VSD (Body Diode) Diode Forward Voltage ––– trr Reverse Recovery Time ––– Qrr Reverse Recovery Charge ––– ton Forward Turn-On Time 2 c f 100 Conditions D MOSFET symbol 410 A showing the integral reverse ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 17A, VGS = 0V 16 24 ns TJ = 25°C, IF = 17A, VDD = 13V 15 23 nC di/dt = 300A/µs G S e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRLR/U8713PbF 1000 1000 100 BOTTOM TOP 10 1 ≤ 60µs PULSE WIDTH Tj = 25°C 2.5V ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.7V 3.5V 3.0V 2.7V 2.5V 100 BOTTOM 10 2.5V ≤ 60µs PULSE WIDTH Tj = 175°C 0.1 1 0.1 1 10 100 0.1 VDS , Drain-to-Source Voltage (V) 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 2.0 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 10V 5.0V 4.5V 3.7V 3.5V 3.0V 2.7V 2.5V TJ = 175°C 10 TJ = 25°C 1 VDS = 15V ≤ 60µs PULSE WIDTH 0.1 1.0 2.0 3.0 4.0 5.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com ID = 42A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRLR/U8713PbF 10000 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) ID= 17A C, Capacitance (pF) Coss = Cds + Cgd Ciss 1000 Coss Crss VDS= 13V 8 6 4 2 0 100 1 10 0 100 10 10000 ID, Drain-to-Source Current (A) 1000 ISD , Reverse Drain Current (A) 30 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 175°C 100 20 Qg, Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100µsec 100 1msec 10 10msec 1 VGS = 0V Tc = 25°C Tj = 175°C Single Pulse 0.1 0.1 0.2 0.6 1.0 1.4 1.8 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS = 21V 10 2.2 0.1 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRLR/U8713PbF 2.4 100 VGS(th) Gate threshold Voltage (V) LIMITED BY PACKAGE ID , Drain Current (A) 80 60 40 20 0 25 50 75 100 125 150 175 2.2 2.0 1.8 ID = 50µA 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 TC , Case Temperature (°C) 25 50 75 100 125 150 175 TJ, Temperature ( °C ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Threshold Voltage Vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 τJ 0.02 0.01 R1 R1 τJ τ1 R2 R2 Ri (°C/W) τC τ2 τ1 Ci= τi/Ri Ci= τi/Ri 0.01 R3 R3 τ2 τ3 τ3 τ τι (sec) 0.382809 0.000148 0.927748 0.0013 0.550944 0.009343 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 RDS (on), Drain-to -Source On Resistance (mΩ) IRLR/U8713PbF 800 EAS, Single Pulse Avalanche Energy (mJ) 16 ID = 21A 12 8 TJ = 125°C 4 TJ = 25°C 0 2.0 4.0 6.0 8.0 10.0 ID 7.1A 9.2A BOTTOM 17A TOP 600 400 200 0 25 VGS, Gate-to-Source Voltage (V) 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage V(BR)DSS 15V DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V tp tp A 0.01Ω I AS Fig 14a. Unclamped Inductive Test Circuit Fig 14b. Unclamped Inductive Waveforms LD VDS + VDS 90% VDD D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% 10% VGS td(on) Fig 15a. Switching Time Test Circuit 6 tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com IRLR/U8713PbF Id Current Regulator Same Type as D.U.T. Vds Vgs 50KΩ .2µF 12V .3µF + V - DS D.U.T. Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Current Sampling Resistors Driver Gate Drive P.W. + + Reverse Recovery Current VDD P.W. Period D.U.T. ISD Waveform + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= * • • • • Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - - RG Qgodr Fig 16b. Gate Charge Waveform Fig 16a. Gate Charge Test Circuit D.U.T Qgd + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRLR/U8713PbF D-Pak (TO-252AA) Package Outline D-Pak (TO-252AA) Part Marking Information EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN THE AS S EMBLY LINE "A" N ote: "P" in assembly line position indicates "Lead-Free" OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFR120 916A 12 INT ERNAT IONAL RECTIFIER LOGO PART NUMBER IRFR120 12 AS S EMBLY LOT CODE 8 34 AS S EMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 16 LINE A P916A 34 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE www.irf.com IRLR/U8713PbF I-Pak (TO-251AA) Package Outline I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 ASS EMBLED ON WW 19, 1999 IN T HE AS SEMBLY LINE "A" Note: "P" in as sembly line pos ition indicates "Lead-Free" OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 919A 56 INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 56 AS SEMBLY LOT CODE www.irf.com 78 ASSEMBLY LOT CODE DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A 78 DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS SEMBLY SIT E CODE 9 IRLR/U8713PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.77mH, RG = 25Ω, IAS = 17A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42A. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately at 90°C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/05 10 www.irf.com