INTEGRATED CIRCUITS DATA SHEET UAA2077CM 2 GHz image rejecting front-end Product specification Supersedes data of 1996 Oct 02 File under Integrated Circuits, IC17 1997 Sep 24 Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM Image rejection is achieved in the internal architecture by two RF mixers in quadrature and two all-pass filters in I and Q IF channels that phase shift the IF by 45° and 135° respectively. The two phase shifted IFs are recombined and buffered to furnish the IF output signal. FEATURES • Low-noise, wide dynamic range amplifier • Very low noise figure • Dual balanced mixer for over 30 dB on-chip image rejection Signals presented at the RF input at LO + IF frequency are rejected through this signal processing while signals at LO − IF frequency can form the IF signal. • IF I/Q combiner at 188 MHz • On-chip quadrature network • Down-conversion mixer for closed-loop transmitters The receiver section consists of a low-noise amplifier that drives a quadrature mixer pair. The IF amplifier has on-chip 45° and 135° phase shifting and a combining network for image rejection. The IF driver has differential open-collector type outputs. • Independent TX/RX fast ON/OFF power-down modes • Very small outline packaging • Very small application (no image filter). The LO part consists of an internal all-pass type phase shifter to provide quadrature LO signals to the receive mixers. The all-pass filters outputs are buffered before being fed to the receive mixers. APPLICATIONS • High frequency front-end for DCS1800/PCS1900 hand-portable equipment • TDMA receivers e.g. RF-LANS. The transmit section consists of a low-noise amplifier, and a down-conversion mixer. In the transmit mode, an internal LO buffer is used to drive the transmit IF down-conversion mixer. GENERAL DESCRIPTION All RF and IF inputs or outputs are balanced. UAA2077CM contains both a receiver front-end and a high frequency transmit mixer intended to be used in mobile telephones. Designed in an advanced BiCMOS process it combines high performance with low power consumption and a high degree of integration, thus reducing external component costs and total front-end size. Pins RXON, TXON and SXON allow to control the different power-down modes. A synthesizer-on (SX) mode enables LO buffers independent of the other circuits. When pin SXON is HIGH, all internal buffers on the LO path of the circuit are turned on, thus minimizing LO pulling when remainder of the receive or transmit chain is powered up. Special care has been taken for fast power-up switching. • Compact digital mobile communication equipment The main advantage of the UAA2077CM is its ability to provide over 30 dB of image rejection. Consequently, the image filter between the LNA and the mixer is suppressed. QUICK REFERENCE DATA SYMBOL PARAMETER MIN. TYP. MAX. UNIT VCC supply voltage 3.6 3.75 5.3 V ICC(RX) receive supply current 27.5 36 44.5 mA ICC(TX) transmit supply current 11 14 17.5 mA ICC(PD) supply current in power-down − − 50 µA Tamb operating ambient temperature −30 +25 +75 °C 1997 Sep 24 2 Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UAA2077CM SSOP20 DESCRIPTION VERSION plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1 BLOCK DIAGRAM n.c. n.c. TXON 4 7 11 SXON RXON SBS handbook, full pagewidth VCCLNA 3 12 9 10 +45o UAA2077CM MIXER 17 RFINA RFINB LNAGND 5 6 LNA +135o 18 8 IFA IF COMBINER IFB low-noise amplifier RECEIVE SECTION VCCLO LOGND TRANSMIT SECTION 15 QUADRATURE PHASE SHIFTER 16 MIXER 19 20 LOCAL OSCILLATOR SECTION 14 13 LOINA LOINB 2 1 MGD285 TXINB TXINA Fig.1 Block diagram. 1997 Sep 24 3 TXOA TXOB Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM PINNING SYMBOL PIN DESCRIPTION TXINA 1 transmit mixer input A (balanced) TXINB 2 transmit mixer input B (balanced) VCCLNA 3 supply voltage for LNA, IF parts and TX mixer n.c. 4 not connected RFINA 5 RF input A (balanced) RFINB 6 RF input B (balanced) n.c. 7 not connected LNAGND 8 ground for LNA, IF parts and TX mixer SXON 9 SX mode enable (see Table 1) SBS 10 sideband selection (should be grounded for fLO < fRF) TXON 11 TX mode enable (see Table 1) RXON 12 RX mode enable (see Table 1) LOINB 13 LO input B (balanced) LOINA 14 LO input A (balanced) VCCLO 15 supply voltage for LO parts LOGND 16 ground for LO parts IFA 17 IF output A (balanced) IFB 18 IF output B (balanced) TXOA 19 transmit mixer IF output A (balanced) TXOB 20 transmit mixer IF output B (balanced) 1997 Sep 24 handbook, halfpage TXINA 1 20 TXOB TXINB 2 19 TXOA VCCLNA 3 18 IFB n.c. 4 17 IFA RFINA 5 16 LOGND UAA2077CM RFINB 6 15 VCCLO n.c. 7 14 LOINA LNAGND 8 13 LOINB SXON 9 12 RXON SBS 10 11 TXON MGD286 Fig.2 Pin configuration. 4 Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM Balanced signal interfaces are used for minimizing crosstalk due to package parasitics. FUNCTIONAL DESCRIPTION Receive section The IF output is differential and of the open-collector type. Typical application will load the output with a 680 Ω resistor load at each IF output, plus a differential 1 kΩ load made of the input impedance of the IF filter or the input impedance of the matching network for the IF filter. The power gain refers to the available power on this 1 kΩ load. The path to VCC for the DC current should be achieved via tuning inductors. The output voltage is limited to VCC + 3Vbe or 3 diode forward voltage drops. The circuit contains a low-noise amplifier followed by two high dynamic range mixers. These mixers are of the Gilbert-cell type, the whole internal architecture is fully differential. The local oscillator, shifted in phase to 45° and 135°, mixes the amplified RF to create I and Q channels. The two I and Q channels are buffered, phase shifted by 45° and 135° respectively, amplified and recombined internally to realize the image rejection. Fast switching, ON/OFF, of the receive section is controlled by the hardware input RXON. Pin SBS allows sideband selection: • fLO > fRF (SBS = 1) • fLO < fRF (SBS = 0). Where fRF is the frequency of the wanted signal. SBS handbook, full pagewidth MIXER VCCLNA IF amplifier +45o IFA RFINA RFINB IF COMBINER MIXER IFB LNA LNAGND IF amplifier +135o MGD754 RXON LOIN Fig.3 Block diagram, receive section. 1997 Sep 24 5 Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM down-converted to a modulated transmit IF frequency, phase locked with the baseband modulation. Local oscillator section The Local Oscillator (LO) input directly drives the two internal all-pass networks to provide quadrature LO to the receive mixers. The IF outputs are HIGH impedance (open-collector type).Typical application will load the output with a 560 Ω resistor load, connected to VCC for DC path, at each TX output, plus a differential 1 kΩ made of the input impedance of the matching network for the following TX part. The mixer can also be used for frequency up-conversion. A synthesizer-ON mode (SX mode) is used to power-up all LO input buffers, thus minimizing the pulling effect on the external VCO when entering receive or transmit mode. This mode is active when SXON = 1. Fast switching, ON/OFF, of the transmit section is controlled by the hardware input TXON. Transmit mixer This mixer is used for down-conversion to the transmit IF. Its inputs are coupled to the transmit RF which is to RX handbook, halfpage VCCLO handbook, halfpage TX MIXER TXOA TXOB LOIN QUAD MGD153 LOGND to TX TXON TXINB TXINA MGD287 SXON LOINA LOINB Fig.4 Block diagram, LO section. Fig.5 Block diagram, transmit mixer. Table 1 Control of power status EXTERNAL PIN LEVEL CIRCUIT MODE OF OPERATION TXON RXON SXON LOW LOW LOW power-down mode LOW HIGH LOW RX mode: receive section and LO buffers to RX on HIGH LOW LOW TX mode: transmit section and LO buffers to TX on LOW LOW HIGH SX mode: complete LO section on LOW HIGH HIGH SRX mode: receive section on and SX mode active HIGH LOW HIGH STX mode: transmit section on and SX mode active HIGH HIGH X 1997 Sep 24 receive section and transmit section on; specification not guaranteed 6 Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VCC supply voltage − 9 V ∆GND difference in ground supply voltage applied between LOGND and LNAGND − 0.6 V Pi(max) maximum power input − +20 dBm Tj(max) maximum operating junction temperature − +150 °C Pdis(max) maximum power dissipation in quiet air − 250 mW Tstg storage temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air VALUE UNIT 120 K/W HANDLING All pins withstand 1500 V ESD test in accordance with “MIL-STD-883C class 1 (method 3015.5)”. 1997 Sep 24 7 Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM DC CHARACTERISTICS VCC = 3.75 V; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Pins: VCCLNA and VCCLO VCC supply voltage over full temperature range 3.6 3.75 5.3 V ICC(RX) supply current in RX mode 27.5 36 44.5 mA ICC(TX) supply current in TX mode 11 14 17.5 mA ICC(PD) supply current in power-down mode − − 50 µA ICC(SX) supply current in SX mode 6.5 8.5 10.5 mA ICC(SRX) supply current in SRX mode 29.5 38.5 47.5 mA ICC(STX) supply current in STX mode 15 19.5 24 mA − 1.25 − V Pins: RXON, TXON, SXON and SBS Vth CMOS threshold voltage note 1 VIH HIGH level input voltage 0.7VCC − VCC V VIL LOW level input voltage −0.3 − +0.8 V IIH HIGH level static input current pins at VCC − 0.4 V −1 − +1 µA IIL LOW level static input current pins at 0.4 V −1 − +1 µA receive section on 1.8 2.0 2.2 V receive section on 2.3 3.0 3.8 mA transmit section on 1.9 2.15 2.4 V transmit section on 0.8 1.0 1.2 mA RXON, TXON or SXON HIGH 2.6 2.9 3.2 V Pins: RFINA and RFINB VI DC input voltage level Pins: IFA and IFB IO DC output current Pins: TXINA and TXINB VI DC input voltage level Pins: TXOA and TXOB IO DC output current Pins: LOINA and LOINB VLOIN DC input voltage level Note 1. The referenced inputs should be connected to a valid CMOS input level. 1997 Sep 24 8 Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM AC CHARACTERISTICS VCC = 3.75 V; Tamb = −30 to +75 °C; foRX = 188 MHz; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Receive section (receive section enabled) RiRX RF input resistance (real part of the parallel input impedance) balanced; at 1960 MHz − 60 − Ω CiRX RF input capacitance (imaginary part of the parallel input impedance) balanced; at 1960 MHz − 0.8 − pF fiRX RF input frequency 1805 − 1990 MHz RLiRX return loss on matched RF input balanced; note 1 15 20 − dB GCPRX conversion power gain differential RF inputs to differential IF outputs loaded to 1 kΩ differential 19 22 25 dB Grip gain ripple as a function of RF frequency within 100 MHz bandwidth; note 2 − 0.2 0.5 dB ∆G/T gain variation with temperature note 2 −10 −15 −20 mdB/K CP1RX 1 dB compression point differential RF inputs to differential IF outputs; note 1 −25.5 −24 − dB DES desensitisation interferer frequency offset: 3 MHz; Pin = −26 dBm; interferer frequency offset: 20 MHz, Pin = −23 dBm differential RF inputs to differential IF outputs; note 1 − − 5 dB IP2DRX half IF spurious attenuation for −52 dBm input power (fRF = fLO + 0.5 × fIF) differential RF inputs to differential IF outputs; note 2 37 − − dB IP3RX 3rd order intercept point differential RF inputs to differential IF outputs; note 2 −21.5 −17 − dBm NFRX overall noise figure differential RF inputs to differential IF outputs Tamb = 25 °C; DCS frequency range; note 3 − 3.8 − dB Tamb = 25 °C; PCS frequency range; notes 2 and 3 − 4.0 4.4 dB Tamb = −30 to +65 °C; PCS frequency range; notes 2 and 3 − − 5.0 dB − 1000 − Ω ZLRX typical application IF output load impedance RLoRX return loss on matched IF output balanced; note 1 15 20 − dB foRX IF frequency range − 188 − MHz IR rejection of image frequency 30 38 − dB 1997 Sep 24 balanced fRF > fLO; fRF is the frequency of the wanted signal 9 Philips Semiconductors Product specification 2 GHz image rejecting front-end SYMBOL PARAMETER UAA2077CM CONDITIONS MIN. TYP. MAX. UNIT Local oscillator section (receive section enabled) fiLO LO input frequency 1617 − 1802 MHz RiLO LO input resistance (real part of the parallel input impedance) balanced; at 1770 MHz − 90 − Ω CiLO LO input inductance (imaginary part of the parallel input impedance) balanced; at 1770 MHz − 5 − nH RLiLO return loss on matched input (including standby mode) note 1 10 15 − dB ∆RLiLO return loss variation between SX, SRX and STX modes linear S11 variation; note 1 − 20 − mU PiLO LO input power level −10 −6 0 dBm RILO reverse isolation LOIN to RFIN at LO frequency; note 2 40 − − dB Transmit section (transmit section enabled) ZLTX TX IF typical load impedance balanced − 500 − Ω RLoTX return loss on matched transmitter IF output note 1 11 15 − dB RiTX TX RF input resistance (real part of the parallel input impedance) balanced; at 1880 MHz − 60 − Ω CiTX TX RF input capacitance (imaginary part of the parallel input impedance) balanced; at 1880 MHz − 1 − pF fiTX TX mixer input frequency 1600 − 2000 MHz RLiTX return loss on matched TX input note 1 10 15 − dB GCPTX conversion power gain differential transmitter inputs to differential transmitter IF outputs loaded with 500 Ω differential 6 9 12 dB foTX TX output frequency 50 − 400 MHz CP1TX 1 dB input compression point note 1 −25 −22 − dBm IP2TX 2nd order intercept point note 2 − +22 − dBm IP3TX 3rd order intercept point note 2 −20 −16 − dBm NFTX noise figure double sideband; notes 2 and 3 − 5 9 dB ITX isolation LOIN to TXIN; note 2 40 − − dB RITX reverse isolation TXIN to LOIN; note 2 38 − − dB 1 5 20 µs Timing tstu start-up time of each block Notes 1. Measured and guaranteed only on UAA2077CM PCS demonstration board at Tamb = 25 °C. 2. Measured and guaranteed only on UAA2077CM PCS demonstration board. 3. This value includes printed-circuit board and balun losses. 1997 Sep 24 10 Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM INTERNAL PIN CONFIGURATION PIN SYMBOL DC VOLTAGE (V) 1 TXINA 2.15 2 TXINB 2.15 5 RFINA 2.0 6 RFINB 2.0 EQUIVALENT CIRCUIT VCC 1, 5 2, 6 GND MGL205 3 VCCLNA 3.75 8 LNAGND 0 9 SXON 10 SBS 11 TXON 12 RXON 13 LOINB 2.9 14 LOINA 2.9 VCC 9, 10, 11, 12 GND MGL204 VCC 13 14 GND MGL206 15 VCCLO 3.75 16 LOGND 0 1997 Sep 24 11 Philips Semiconductors Product specification 2 GHz image rejecting front-end PIN SYMBOL 17 IFA UAA2077CM DC VOLTAGE (V) EQUIVALENT CIRCUIT VCC 17 18 18 IFB GND GND MGL207 19 TXOA VCC 19 20 20 TXOB GND MGL208 1997 Sep 24 12 1997 Sep 24 13 1 2 4.7 nH L1 C8 8.2 pF R4 560 kΩ C5 82 pF 560 kΩ L15 8.2 nH SBS 8.2 pF 8.2 pF C3 C1 8.2 pF C6 8.2 pF 8.2 pF 8.2 pF C17 3.75 V SXON C14 1.2 pF 1.2 pF C2 L6 4.7 nH C15 1.8 pF L7 4.7 nH C16 1.8 pF C18 1 2 C7 8.2 pF R3 560 kΩ TXON 10 9 1 2 11 12 13 14 7 8 15 6 16 5 UAA2077CM 17 18 19 20 4 3 2 1 C9 8.2 pF R5 560 kΩ RXON R2 560 Ω 3.75 V R1 560 Ω Fig.6 Application diagram. Figure 6 illustrates the electrical diagram of the UAA2077CM Philips demonstration board for PCS1900 applications. For measurement purposes all matching is to 50 Ω. Different values will be used in a real application. RFIN 1930 to 1990 MHz TXIN 1850 to 1910 MHz L8 4.7 nH R6 680 Ω 3.75 V L9 4.7 nH C19 C24 5.6 pF C23 C21 1.5 pF C29 8.2 pF LOIN 1742 to 1817 MHz C20 1.5 pF 8.2 pF R7 680 Ω L12 82 nH C25 12 pF MGD288 L10 4.7 nH C28 1 nF 3.75 V L14 56 nH C27 8.2 pF IFB 56 nH L13 12 pF C26 TXOUT 93 MHz C22 IFA 82 pF 5.6 pF L4 120 nH C13 22 pF L5 120 nH C12 22 pF L11 82 nH 1.5 pF C10 120 pF C11 C4 120 pF 3.75 V L2 180 nH L3 180 nH 12 pF IF 188 MHz 2 GHz image rejecting front-end handbook, full pagewidth Philips Semiconductors Product specification UAA2077CM APPLICATION INFORMATION Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm D SOT266-1 E A X c y HE v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 detail X w M bp e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ mm 1.5 0.15 0 1.4 1.2 0.25 0.32 0.20 0.20 0.13 6.6 6.4 4.5 4.3 0.65 6.6 6.2 1.0 0.75 0.45 0.65 0.45 0.2 0.13 0.1 0.48 0.18 10 0o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 90-04-05 95-02-25 SOT266-1 1997 Sep 24 EUROPEAN PROJECTION 14 o Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM If wave soldering cannot be avoided, the following conditions must be observed: SOLDERING Introduction • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. • The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. 1997 Sep 24 15 Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Sep 24 16 Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM NOTES 1997 Sep 24 17 Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM NOTES 1997 Sep 24 18 Philips Semiconductors Product specification 2 GHz image rejecting front-end UAA2077CM NOTES 1997 Sep 24 19 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Internet: http://www.semiconductors.philips.com © Philips Electronics N.V. 1997 SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 437027/1200/02/pp20 Date of release: 1997 Sep 24 Document order number: 9397 750 02731