PHILIPS UAA2077CM

INTEGRATED CIRCUITS
DATA SHEET
UAA2077CM
2 GHz image rejecting front-end
Product specification
Supersedes data of 1996 Oct 02
File under Integrated Circuits, IC17
1997 Sep 24
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
Image rejection is achieved in the internal architecture by
two RF mixers in quadrature and two all-pass filters in
I and Q IF channels that phase shift the IF by 45° and 135°
respectively. The two phase shifted IFs are recombined
and buffered to furnish the IF output signal.
FEATURES
• Low-noise, wide dynamic range amplifier
• Very low noise figure
• Dual balanced mixer for over 30 dB on-chip image
rejection
Signals presented at the RF input at LO + IF frequency are
rejected through this signal processing while signals at
LO − IF frequency can form the IF signal.
• IF I/Q combiner at 188 MHz
• On-chip quadrature network
• Down-conversion mixer for closed-loop transmitters
The receiver section consists of a low-noise amplifier that
drives a quadrature mixer pair. The IF amplifier has
on-chip 45° and 135° phase shifting and a combining
network for image rejection. The IF driver has differential
open-collector type outputs.
• Independent TX/RX fast ON/OFF power-down modes
• Very small outline packaging
• Very small application (no image filter).
The LO part consists of an internal all-pass type phase
shifter to provide quadrature LO signals to the receive
mixers. The all-pass filters outputs are buffered before
being fed to the receive mixers.
APPLICATIONS
• High frequency front-end for DCS1800/PCS1900
hand-portable equipment
• TDMA receivers e.g. RF-LANS.
The transmit section consists of a low-noise amplifier, and
a down-conversion mixer. In the transmit mode, an internal
LO buffer is used to drive the transmit IF down-conversion
mixer.
GENERAL DESCRIPTION
All RF and IF inputs or outputs are balanced.
UAA2077CM contains both a receiver front-end and a high
frequency transmit mixer intended to be used in mobile
telephones. Designed in an advanced BiCMOS process it
combines high performance with low power consumption
and a high degree of integration, thus reducing external
component costs and total front-end size.
Pins RXON, TXON and SXON allow to control the different
power-down modes. A synthesizer-on (SX) mode enables
LO buffers independent of the other circuits. When
pin SXON is HIGH, all internal buffers on the LO path of
the circuit are turned on, thus minimizing LO pulling when
remainder of the receive or transmit chain is powered up.
Special care has been taken for fast power-up switching.
• Compact digital mobile communication equipment
The main advantage of the UAA2077CM is its ability to
provide over 30 dB of image rejection. Consequently, the
image filter between the LNA and the mixer is suppressed.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
VCC
supply voltage
3.6
3.75
5.3
V
ICC(RX)
receive supply current
27.5
36
44.5
mA
ICC(TX)
transmit supply current
11
14
17.5
mA
ICC(PD)
supply current in power-down
−
−
50
µA
Tamb
operating ambient temperature
−30
+25
+75
°C
1997 Sep 24
2
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
ORDERING INFORMATION
PACKAGE
TYPE
NUMBER
NAME
UAA2077CM
SSOP20
DESCRIPTION
VERSION
plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
BLOCK DIAGRAM
n.c.
n.c.
TXON
4
7
11
SXON
RXON
SBS
handbook, full pagewidth
VCCLNA
3
12
9
10
+45o
UAA2077CM
MIXER
17
RFINA
RFINB
LNAGND
5
6
LNA
+135o
18
8
IFA
IF
COMBINER
IFB
low-noise
amplifier
RECEIVE SECTION
VCCLO
LOGND
TRANSMIT SECTION
15
QUADRATURE
PHASE
SHIFTER
16
MIXER
19
20
LOCAL OSCILLATOR
SECTION
14
13
LOINA
LOINB
2
1
MGD285
TXINB TXINA
Fig.1 Block diagram.
1997 Sep 24
3
TXOA
TXOB
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
PINNING
SYMBOL
PIN
DESCRIPTION
TXINA
1
transmit mixer input A (balanced)
TXINB
2
transmit mixer input B (balanced)
VCCLNA
3
supply voltage for LNA, IF parts
and TX mixer
n.c.
4
not connected
RFINA
5
RF input A (balanced)
RFINB
6
RF input B (balanced)
n.c.
7
not connected
LNAGND
8
ground for LNA, IF parts and TX
mixer
SXON
9
SX mode enable (see Table 1)
SBS
10
sideband selection (should be
grounded for fLO < fRF)
TXON
11
TX mode enable (see Table 1)
RXON
12
RX mode enable (see Table 1)
LOINB
13
LO input B (balanced)
LOINA
14
LO input A (balanced)
VCCLO
15
supply voltage for LO parts
LOGND
16
ground for LO parts
IFA
17
IF output A (balanced)
IFB
18
IF output B (balanced)
TXOA
19
transmit mixer IF output A
(balanced)
TXOB
20
transmit mixer IF output B
(balanced)
1997 Sep 24
handbook, halfpage
TXINA
1
20 TXOB
TXINB
2
19 TXOA
VCCLNA
3
18 IFB
n.c.
4
17 IFA
RFINA
5
16 LOGND
UAA2077CM
RFINB
6
15 VCCLO
n.c.
7
14 LOINA
LNAGND
8
13 LOINB
SXON
9
12 RXON
SBS 10
11 TXON
MGD286
Fig.2 Pin configuration.
4
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
Balanced signal interfaces are used for minimizing
crosstalk due to package parasitics.
FUNCTIONAL DESCRIPTION
Receive section
The IF output is differential and of the open-collector type.
Typical application will load the output with a 680 Ω
resistor load at each IF output, plus a differential 1 kΩ load
made of the input impedance of the IF filter or the input
impedance of the matching network for the IF filter.
The power gain refers to the available power on this 1 kΩ
load. The path to VCC for the DC current should be
achieved via tuning inductors. The output voltage is limited
to VCC + 3Vbe or 3 diode forward voltage drops.
The circuit contains a low-noise amplifier followed by two
high dynamic range mixers. These mixers are of the
Gilbert-cell type, the whole internal architecture is fully
differential.
The local oscillator, shifted in phase to 45° and 135°,
mixes the amplified RF to create I and Q channels.
The two I and Q channels are buffered, phase shifted by
45° and 135° respectively, amplified and recombined
internally to realize the image rejection.
Fast switching, ON/OFF, of the receive section is
controlled by the hardware input RXON.
Pin SBS allows sideband selection:
• fLO > fRF (SBS = 1)
• fLO < fRF (SBS = 0).
Where fRF is the frequency of the wanted signal.
SBS
handbook, full pagewidth
MIXER
VCCLNA
IF
amplifier
+45o
IFA
RFINA
RFINB
IF
COMBINER
MIXER
IFB
LNA
LNAGND
IF
amplifier
+135o
MGD754
RXON
LOIN
Fig.3 Block diagram, receive section.
1997 Sep 24
5
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
down-converted to a modulated transmit IF frequency,
phase locked with the baseband modulation.
Local oscillator section
The Local Oscillator (LO) input directly drives the two
internal all-pass networks to provide quadrature LO to the
receive mixers.
The IF outputs are HIGH impedance (open-collector
type).Typical application will load the output with a 560 Ω
resistor load, connected to VCC for DC path, at each TX
output, plus a differential 1 kΩ made of the input
impedance of the matching network for the following TX
part. The mixer can also be used for frequency
up-conversion.
A synthesizer-ON mode (SX mode) is used to power-up all
LO input buffers, thus minimizing the pulling effect on the
external VCO when entering receive or transmit mode.
This mode is active when SXON = 1.
Fast switching, ON/OFF, of the transmit section is
controlled by the hardware input TXON.
Transmit mixer
This mixer is used for down-conversion to the transmit IF.
Its inputs are coupled to the transmit RF which is
to RX
handbook, halfpage
VCCLO
handbook, halfpage
TX MIXER
TXOA
TXOB
LOIN
QUAD
MGD153
LOGND
to TX
TXON TXINB TXINA
MGD287
SXON LOINA
LOINB
Fig.4 Block diagram, LO section.
Fig.5 Block diagram, transmit mixer.
Table 1 Control of power status
EXTERNAL PIN LEVEL
CIRCUIT MODE OF OPERATION
TXON
RXON
SXON
LOW
LOW
LOW
power-down mode
LOW
HIGH
LOW
RX mode: receive section and LO buffers to RX on
HIGH
LOW
LOW
TX mode: transmit section and LO buffers to TX on
LOW
LOW
HIGH
SX mode: complete LO section on
LOW
HIGH
HIGH
SRX mode: receive section on and SX mode active
HIGH
LOW
HIGH
STX mode: transmit section on and SX mode active
HIGH
HIGH
X
1997 Sep 24
receive section and transmit section on; specification not guaranteed
6
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VCC
supply voltage
−
9
V
∆GND
difference in ground supply voltage applied between LOGND and
LNAGND
−
0.6
V
Pi(max)
maximum power input
−
+20
dBm
Tj(max)
maximum operating junction temperature
−
+150
°C
Pdis(max)
maximum power dissipation in quiet air
−
250
mW
Tstg
storage temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient in free air
VALUE
UNIT
120
K/W
HANDLING
All pins withstand 1500 V ESD test in accordance with “MIL-STD-883C class 1 (method 3015.5)”.
1997 Sep 24
7
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
DC CHARACTERISTICS
VCC = 3.75 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pins: VCCLNA and VCCLO
VCC
supply voltage
over full temperature range
3.6
3.75
5.3
V
ICC(RX)
supply current in RX mode
27.5
36
44.5
mA
ICC(TX)
supply current in TX mode
11
14
17.5
mA
ICC(PD)
supply current in power-down mode
−
−
50
µA
ICC(SX)
supply current in SX mode
6.5
8.5
10.5
mA
ICC(SRX)
supply current in SRX mode
29.5
38.5
47.5
mA
ICC(STX)
supply current in STX mode
15
19.5
24
mA
−
1.25
−
V
Pins: RXON, TXON, SXON and SBS
Vth
CMOS threshold voltage
note 1
VIH
HIGH level input voltage
0.7VCC
−
VCC
V
VIL
LOW level input voltage
−0.3
−
+0.8
V
IIH
HIGH level static input current
pins at VCC − 0.4 V
−1
−
+1
µA
IIL
LOW level static input current
pins at 0.4 V
−1
−
+1
µA
receive section on
1.8
2.0
2.2
V
receive section on
2.3
3.0
3.8
mA
transmit section on
1.9
2.15
2.4
V
transmit section on
0.8
1.0
1.2
mA
RXON, TXON or SXON HIGH
2.6
2.9
3.2
V
Pins: RFINA and RFINB
VI
DC input voltage level
Pins: IFA and IFB
IO
DC output current
Pins: TXINA and TXINB
VI
DC input voltage level
Pins: TXOA and TXOB
IO
DC output current
Pins: LOINA and LOINB
VLOIN
DC input voltage level
Note
1. The referenced inputs should be connected to a valid CMOS input level.
1997 Sep 24
8
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
AC CHARACTERISTICS
VCC = 3.75 V; Tamb = −30 to +75 °C; foRX = 188 MHz; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Receive section (receive section enabled)
RiRX
RF input resistance (real part of
the parallel input impedance)
balanced; at 1960 MHz
−
60
−
Ω
CiRX
RF input capacitance
(imaginary part of the parallel
input impedance)
balanced; at 1960 MHz
−
0.8
−
pF
fiRX
RF input frequency
1805
−
1990
MHz
RLiRX
return loss on matched RF input
balanced; note 1
15
20
−
dB
GCPRX
conversion power gain
differential RF inputs to differential
IF outputs loaded to 1 kΩ
differential
19
22
25
dB
Grip
gain ripple as a function of RF
frequency
within 100 MHz bandwidth; note 2
−
0.2
0.5
dB
∆G/T
gain variation with temperature
note 2
−10
−15
−20
mdB/K
CP1RX
1 dB compression point
differential RF inputs to differential
IF outputs; note 1
−25.5
−24
−
dB
DES
desensitisation
interferer frequency offset: 3 MHz;
Pin = −26 dBm; interferer
frequency offset: 20 MHz,
Pin = −23 dBm differential RF
inputs to differential IF outputs;
note 1
−
−
5
dB
IP2DRX
half IF spurious attenuation for
−52 dBm input power
(fRF = fLO + 0.5 × fIF)
differential RF inputs to differential
IF outputs; note 2
37
−
−
dB
IP3RX
3rd order intercept point
differential RF inputs to differential
IF outputs; note 2
−21.5
−17
−
dBm
NFRX
overall noise figure
differential RF inputs to differential
IF outputs
Tamb = 25 °C; DCS frequency
range; note 3
−
3.8
−
dB
Tamb = 25 °C; PCS frequency
range; notes 2 and 3
−
4.0
4.4
dB
Tamb = −30 to +65 °C; PCS
frequency range; notes 2 and 3
−
−
5.0
dB
−
1000
−
Ω
ZLRX
typical application IF output load
impedance
RLoRX
return loss on matched IF output balanced; note 1
15
20
−
dB
foRX
IF frequency range
−
188
−
MHz
IR
rejection of image frequency
30
38
−
dB
1997 Sep 24
balanced
fRF > fLO; fRF is the frequency of
the wanted signal
9
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
SYMBOL
PARAMETER
UAA2077CM
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Local oscillator section (receive section enabled)
fiLO
LO input frequency
1617
−
1802
MHz
RiLO
LO input resistance (real part of
the parallel input impedance)
balanced; at 1770 MHz
−
90
−
Ω
CiLO
LO input inductance (imaginary
part of the parallel input
impedance)
balanced; at 1770 MHz
−
5
−
nH
RLiLO
return loss on matched input
(including standby mode)
note 1
10
15
−
dB
∆RLiLO
return loss variation between
SX, SRX and STX modes
linear S11 variation; note 1
−
20
−
mU
PiLO
LO input power level
−10
−6
0
dBm
RILO
reverse isolation
LOIN to RFIN at LO frequency;
note 2
40
−
−
dB
Transmit section (transmit section enabled)
ZLTX
TX IF typical load impedance
balanced
−
500
−
Ω
RLoTX
return loss on matched
transmitter IF output
note 1
11
15
−
dB
RiTX
TX RF input resistance
(real part of the parallel input
impedance)
balanced; at 1880 MHz
−
60
−
Ω
CiTX
TX RF input capacitance
(imaginary part of the parallel
input impedance)
balanced; at 1880 MHz
−
1
−
pF
fiTX
TX mixer input frequency
1600
−
2000
MHz
RLiTX
return loss on matched TX input
note 1
10
15
−
dB
GCPTX
conversion power gain
differential transmitter inputs to
differential transmitter IF outputs
loaded with 500 Ω differential
6
9
12
dB
foTX
TX output frequency
50
−
400
MHz
CP1TX
1 dB input compression point
note 1
−25
−22
−
dBm
IP2TX
2nd order intercept point
note 2
−
+22
−
dBm
IP3TX
3rd order intercept point
note 2
−20
−16
−
dBm
NFTX
noise figure
double sideband; notes 2 and 3
−
5
9
dB
ITX
isolation
LOIN to TXIN; note 2
40
−
−
dB
RITX
reverse isolation
TXIN to LOIN; note 2
38
−
−
dB
1
5
20
µs
Timing
tstu
start-up time of each block
Notes
1. Measured and guaranteed only on UAA2077CM PCS demonstration board at Tamb = 25 °C.
2. Measured and guaranteed only on UAA2077CM PCS demonstration board.
3. This value includes printed-circuit board and balun losses.
1997 Sep 24
10
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
INTERNAL PIN CONFIGURATION
PIN
SYMBOL
DC
VOLTAGE
(V)
1
TXINA
2.15
2
TXINB
2.15
5
RFINA
2.0
6
RFINB
2.0
EQUIVALENT CIRCUIT
VCC
1, 5
2, 6
GND
MGL205
3
VCCLNA
3.75
8
LNAGND
0
9
SXON
10
SBS
11
TXON
12
RXON
13
LOINB
2.9
14
LOINA
2.9
VCC
9, 10, 11, 12
GND
MGL204
VCC
13
14
GND
MGL206
15
VCCLO
3.75
16
LOGND
0
1997 Sep 24
11
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
PIN
SYMBOL
17
IFA
UAA2077CM
DC
VOLTAGE
(V)
EQUIVALENT CIRCUIT
VCC
17
18
18
IFB
GND
GND
MGL207
19
TXOA
VCC
19
20
20
TXOB
GND
MGL208
1997 Sep 24
12
1997 Sep 24
13
1
2
4.7 nH
L1
C8
8.2
pF
R4
560
kΩ
C5
82 pF
560
kΩ
L15
8.2 nH
SBS
8.2
pF
8.2 pF
C3
C1 8.2 pF
C6
8.2 pF
8.2 pF
8.2 pF
C17
3.75 V
SXON
C14 1.2 pF
1.2 pF
C2
L6 4.7 nH
C15 1.8 pF
L7 4.7 nH
C16 1.8 pF
C18
1
2
C7
8.2
pF
R3
560
kΩ
TXON
10
9
1
2
11
12
13
14
7
8
15
6
16
5
UAA2077CM
17
18
19
20
4
3
2
1
C9
8.2
pF
R5
560
kΩ
RXON
R2
560 Ω
3.75 V
R1
560 Ω
Fig.6 Application diagram.
Figure 6 illustrates the electrical diagram of the UAA2077CM Philips demonstration board for PCS1900 applications.
For measurement purposes all matching is to 50 Ω. Different values will be used in a real application.
RFIN
1930 to
1990 MHz
TXIN
1850 to
1910 MHz
L8 4.7 nH
R6
680 Ω
3.75 V
L9
4.7 nH
C19
C24
5.6 pF
C23
C21
1.5 pF
C29
8.2 pF
LOIN
1742 to 1817 MHz
C20
1.5 pF
8.2 pF
R7
680 Ω
L12
82
nH
C25
12 pF
MGD288
L10
4.7 nH
C28
1 nF
3.75 V
L14 56 nH
C27
8.2 pF
IFB
56 nH
L13
12 pF C26
TXOUT
93 MHz
C22 IFA
82 pF
5.6 pF
L4 120 nH
C13
22 pF
L5
120
nH
C12 22 pF
L11
82
nH
1.5 pF
C10
120 pF
C11
C4
120 pF
3.75 V
L2
180
nH
L3
180
nH
12 pF
IF
188 MHz
2 GHz image rejecting front-end
handbook, full pagewidth
Philips Semiconductors
Product specification
UAA2077CM
APPLICATION INFORMATION
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
D
SOT266-1
E
A
X
c
y
HE
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0
1.4
1.2
0.25
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
6.6
6.2
1.0
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10
0o
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
90-04-05
95-02-25
SOT266-1
1997 Sep 24
EUROPEAN
PROJECTION
14
o
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
If wave soldering cannot be avoided, the following
conditions must be observed:
SOLDERING
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1997 Sep 24
15
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 24
16
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
NOTES
1997 Sep 24
17
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
NOTES
1997 Sep 24
18
Philips Semiconductors
Product specification
2 GHz image rejecting front-end
UAA2077CM
NOTES
1997 Sep 24
19
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Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
437027/1200/02/pp20
Date of release: 1997 Sep 24
Document order number:
9397 750 02731